CN100428408C - 光掩模的静电放电保护的方法和结构 - Google Patents
光掩模的静电放电保护的方法和结构 Download PDFInfo
- Publication number
- CN100428408C CN100428408C CNB2003101229645A CN200310122964A CN100428408C CN 100428408 C CN100428408 C CN 100428408C CN B2003101229645 A CNB2003101229645 A CN B2003101229645A CN 200310122964 A CN200310122964 A CN 200310122964A CN 100428408 C CN100428408 C CN 100428408C
- Authority
- CN
- China
- Prior art keywords
- mask
- fuse
- masked area
- guard ring
- ring structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims description 46
- 230000003068 static effect Effects 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 230000005611 electricity Effects 0.000 claims abstract 7
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 2
- 238000002955 isolation Methods 0.000 claims 2
- 238000001259 photo etching Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 230000001771 impaired effect Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002216 antistatic agent Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- PICXIOQBANWBIZ-UHFFFAOYSA-N zinc;1-oxidopyridine-2-thione Chemical class [Zn+2].[O-]N1C=CC=CC1=S.[O-]N1C=CC=CC1=S PICXIOQBANWBIZ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/40—Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/945—Special, e.g. metal
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
Description
Claims (20)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2003101229645A CN100428408C (zh) | 2003-12-30 | 2003-12-30 | 光掩模的静电放电保护的方法和结构 |
US10/773,597 US7125755B2 (en) | 2003-12-30 | 2004-02-06 | Method and structure for electrostatic discharge protection of photomasks |
US11/552,142 US7612980B2 (en) | 2003-12-30 | 2006-10-23 | Method and structure for electrostatic discharge protection of photomasks |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2003101229645A CN100428408C (zh) | 2003-12-30 | 2003-12-30 | 光掩模的静电放电保护的方法和结构 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1635612A CN1635612A (zh) | 2005-07-06 |
CN100428408C true CN100428408C (zh) | 2008-10-22 |
Family
ID=34683166
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2003101229645A Expired - Lifetime CN100428408C (zh) | 2003-12-30 | 2003-12-30 | 光掩模的静电放电保护的方法和结构 |
Country Status (2)
Country | Link |
---|---|
US (2) | US7125755B2 (zh) |
CN (1) | CN100428408C (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWM328438U (en) * | 2007-06-08 | 2008-03-11 | Gudeng Prec Industral Co Ltd | Reticle pod and reticle transport pod |
TWM331511U (en) * | 2007-08-10 | 2008-05-01 | Gudeng Prec Industral Co Ltd | Container |
TWM329035U (en) * | 2007-08-10 | 2008-03-21 | Gudeng Prec Industral Co Ltd | Container and the liner thereof |
WO2020147059A1 (en) * | 2019-01-17 | 2020-07-23 | Yangtze Memory Technologies Co., Ltd. | Photomask with electrostatic discharge protection |
CN112711174A (zh) * | 2020-12-28 | 2021-04-27 | Tcl华星光电技术有限公司 | 光罩、阵列基板的制备方法与显示面板 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6216873B1 (en) * | 1999-03-19 | 2001-04-17 | Asyst Technologies, Inc. | SMIF container including a reticle support structure |
US20030013258A1 (en) * | 2001-07-12 | 2003-01-16 | Taiwan Semiconductor Manfacturing Co.,Ltd. | Photomask esd protection and an anti-esd pod with such protection |
US6513654B2 (en) * | 2000-07-10 | 2003-02-04 | Asyst Technologies, Inc. | SMIF container including an electrostatic dissipative reticle support structure |
CN1459828A (zh) * | 2002-05-17 | 2003-12-03 | 三菱电机株式会社 | 半导体装置及其制造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5989754A (en) * | 1997-09-05 | 1999-11-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photomask arrangement protecting reticle patterns from electrostatic discharge damage (ESD) |
US5999397A (en) * | 1997-10-27 | 1999-12-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for preventing electrostatic discharge damage to an insulating article |
EP1055153B1 (en) * | 1998-12-14 | 2012-01-18 | Nxp B.V. | Photomask with a mask edge provided with a ring-shaped esd protection area |
KR20010057347A (ko) * | 1999-12-22 | 2001-07-04 | 황인길 | 스텝퍼에 사용되는 레티클의 정전기 방지구조 |
US6247599B1 (en) * | 2000-01-14 | 2001-06-19 | Taiwan Semiconductor Manufacturing Company, Ltd | Electrostatic discharge-free container equipped with metal shield |
US6421113B1 (en) * | 2000-02-14 | 2002-07-16 | Advanced Micro Devices, Inc. | Photolithography system including a SMIF pod and reticle library cassette designed for ESD protection |
US6372390B1 (en) * | 2000-06-01 | 2002-04-16 | United Microelectronics Corp. | Photo mask with an ESD protective function |
US6893780B1 (en) * | 2001-11-09 | 2005-05-17 | Dupont Photomasks, Inc. | Photomask and method for reducing electrostatic discharge on the same with an ESD protection pattern |
US6927345B2 (en) * | 2002-05-16 | 2005-08-09 | Taiwan Semiconductor Manufacturing Co., Ltd | Guard ring having electrically isolated lightening bars |
US7514184B2 (en) * | 2002-10-18 | 2009-04-07 | Taiwan Semiconductor Manufacturing Co. | Reticle with antistatic coating |
-
2003
- 2003-12-30 CN CNB2003101229645A patent/CN100428408C/zh not_active Expired - Lifetime
-
2004
- 2004-02-06 US US10/773,597 patent/US7125755B2/en not_active Expired - Lifetime
-
2006
- 2006-10-23 US US11/552,142 patent/US7612980B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6216873B1 (en) * | 1999-03-19 | 2001-04-17 | Asyst Technologies, Inc. | SMIF container including a reticle support structure |
US6513654B2 (en) * | 2000-07-10 | 2003-02-04 | Asyst Technologies, Inc. | SMIF container including an electrostatic dissipative reticle support structure |
US20030013258A1 (en) * | 2001-07-12 | 2003-01-16 | Taiwan Semiconductor Manfacturing Co.,Ltd. | Photomask esd protection and an anti-esd pod with such protection |
CN1459828A (zh) * | 2002-05-17 | 2003-12-03 | 三菱电机株式会社 | 半导体装置及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US7125755B2 (en) | 2006-10-24 |
CN1635612A (zh) | 2005-07-06 |
US20070066006A1 (en) | 2007-03-22 |
US20050142699A1 (en) | 2005-06-30 |
US7612980B2 (en) | 2009-11-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20111202 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20111202 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Co-patentee after: Semiconductor Manufacturing International (Beijing) Corp. Patentee after: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. |
|
CX01 | Expiry of patent term |
Granted publication date: 20081022 |
|
CX01 | Expiry of patent term |