CN100426397C - 信息记录介质、信息记录方法、信息重放方法 - Google Patents
信息记录介质、信息记录方法、信息重放方法 Download PDFInfo
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- CN100426397C CN100426397C CNB03141205XA CN03141205A CN100426397C CN 100426397 C CN100426397 C CN 100426397C CN B03141205X A CNB03141205X A CN B03141205XA CN 03141205 A CN03141205 A CN 03141205A CN 100426397 C CN100426397 C CN 100426397C
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Abstract
本发明的信息记录介质、信息记录、重放方法通过设置光吸收金属或电介质或记录材料的超微小粒子适当规则排列的层,来实现高速记录和高密度记录。通过超微小粒子的共谐等离子体振子激发、共谐吸收等,使记录标记的端部(边沿)的位置正确,能够在多层的情况下通过波长只在特定的层引起强吸收,能够实现高密度大容量的记录。
Description
技术领域
本发明涉及利用光记录信息的信息记录介质、信息记录方法以及信息记录装置。
背景技术
现在已知多种利用光照射记录膜而记录信息的原理,而其中利用膜材料的相变等、由热造成的原子排列变化的原理具有能够得到可多次改写的信息记录介质的优点。例如,如特开2001-344807号所记载的,在这些相变光盘的情况下的基本结构是由在衬底上的保护层、GeSbTe族等的记录膜、保护层、反射层构成的。
另一方面,实际运用了以有机材料作为记录层的光盘的有CD-R和DVD-R。它们是向包含有吸收记录光源的色素的记录层和与其连接的衬底表面照射激光使其产生质变来进行记录的。
另外,作为使用可变波长激光的进行超高密度记录的方法,已经报告了利用在许多的其大小稍有不同的胶乳球周围被覆色素、引起与直径相应的特定波长的共谐吸收而进行高密度记录方法。
进而,在被称为光致磁记录、或磁光结合记录的技术中,一边照射脉冲或连续的激光一边施加线圈发出的调制磁场来对其易磁化轴垂直于其膜面的记录介质进行高密度记录,并通过与磁盘一样的磁头进行读出。
为了对光盘、光致、热致磁盘进行超高密度记录,有对记录标志的长度进行细微调整的调制方式的2值记录、或多值记录方法,它虽然在原理上能够高密度化,但实际上由于各种各样的原因使记录标志的开始端和结束端产生摇摆,而难于提高密度。另外,虽然为了实际提高记录密度理想的是进行多层化,但是由于在象2层DVD那样的方法中是改变焦点的位置而进行记录的,所以3层以上的记录介质容易产生球面象差,给光入射侧的层的光吸收带来恶劣影响是个问题。另外,在利用了对记录光透明的材料进行2光子吸收的多层(3维)记录中,由于2光子吸收的转移概率较低,所以就有需要非常大的或短脉冲的激光的问题。另外,在利用了胶乳球的波长多路记录中,有因不能控制球大小的分布,而造成由波长产生的重放信号的强度有很大差异的问题。
发明内容
本发明的目的就是解决这些问题点,而实现超高密度记录。
下面说明解决上述问题点的本发明的结构。
通过预先在记录介质的记录膜或接近记录膜的层中,作成由于与衬底表面的凹凸同步的自结合化而产生的光吸收率和反射率的细微的周期结构,使记录标志的开始端、结束端的位置正确,而能够高密度化。
在自结合膜中,使用例如将硫醇类有机分子或油酰胺和油酸分子吸附在金属的超微粒子的周围的膜等。由此,在制膜时,通过使其从溶液中析出的方法、或与紫外线硬化树脂一起涂抹,加温使其再排列的方法等使其自结合。理想的自结合膜的超微粒子的排列是利用跟踪用沟使其向沟的方向排列。由此,使超微粒子的无机物和其周围的有机物在磁道的方向上交互排列。为了多层化,在使其自结合后,设置隔热隔离层,再次同样地生成自结合层。
关于记录原理,利用了通过热使微粒子产生自身的相变或磁性反转或颜色变化进而混合,或者利用上面制了膜的相变记录材料或色素的颜色变化等。
在本发明中,把在衬底的凹部成为沟的部分被称为凹槽。凹槽与凹槽之间称为凸缘。在光透过衬底射入膜的情况下,从入射侧看凹槽是凸起的。因此,即使在使光从衬底的相反侧入射的方式下,也有将由入射侧看呈凸起的侧同样称为凹槽的情况。因为在只注视衬底的时候,该部分是作为凸起部分的凹槽与凹槽之间的凸缘,所以这种称呼方法与本发明的定义相反。在只对凸缘和凹槽中的一个进行记录,即所谓的凹槽内记录的情况下,虽然对于光从衬底侧入射或从衬底的相反侧入射的情况,在从光入射侧看是凸起的部分上进行记录其记录特性较好的情况较多,但是因为其差异并不大,所以在从光入射侧看是凹槽的部分上记录也行。
在本申请的发明中,为了能更好地提高记录密度,最好是多层记录。虽然为了提高实际记录密度(实际的面密度)理想的是多层化,但是,在现有的介质中,除了3层以上容易出现球面象差以外,还要在各层的透过率与记录灵敏度之间进行折衷,不牺牲重放信号质量和记录灵敏度中的一个是不能实现的。虽然已知在透明有机材料的厚度方向上进行3维记录的情况,但是在利用2光子吸收的情况下,记录灵敏度非常差,在利用光重合的情况下,存储稳定性和记录灵敏度差。
但是在本发明中,通过在每一层中逐步将色素分子吸附到大小不同的电介质超微粒子的周围的方法,能够引起对波长微小变化的半导体激光的共谐吸收,不产生在光入射侧吸收光的恶劣影响而只在目标层中进行光吸收。
本发明在2.6GB DVD-RAM规格以上的记录密度(磁道间距、位间距)的情况下能够发挥作用,而在4.7GB DVD-RAM规格以上的记录密度的情况下特别能够发挥作用。在光源的波长不在660nm附近的情况(例如在400nm附近的情况、聚光透镜的数值孔径(NA)不是0.65的情况)下,对由这些参数参照半径方向、圆周方向以及波长比、NA比变换出的记录密度能发挥效果。
另外,在本说明书中,不止结晶-非结晶间的相变,对包括融解(变化为液态)与再结晶、结晶状态-结晶状态间的相变也使用术语“相变”。
作为本发明的实施例的实验是使用使光从衬底侧入射的常规的光头进行的,但是如果使用利用NA0.85左右的聚焦透镜使光从衬底的相反侧入射的头或近场式头,就更能实现适用于本发明的记录介质的高密度记录了。
本发明提供了一种信息记录介质,通过能量照射记录信息,其特征在于:至少把具有沟状记录磁道的衬底的表面用绝缘物材料构成;在至少一部分所述沟状部分具有记录材料,其中该记录材料为在上述记录磁道方向上以一定的周期适当规则地排列了光吸收度与其周围不同的无机物的材料。
本发明提供了一种信息记录方法,其特征在于:使用包括:形成了断续的沟状的记录磁道的基板;形成于该基板表面且在表面形成了上述记录磁道的绝缘物材料;形成于该绝缘物材料上的记录磁道上的、包含在该记录磁道的磁道方向上以一定的周期适当规则地排列了的、至少一部分的光吸收度与其周围不同的无机物的第一层;以及利用热引起相变或化学变化的第二层;的信息记录介质,在上述第一层上照射光;利用基于该光照射的第一层的加热,在上述第二层上形成记录标记,在上述信息记录介质上记录信息。
附图说明
图1是本发明的一个实施例的信息记录介质的剖面图。
图2是本发明的一个实施例的信息记录介质的一部分的平面图。
图3是本发明的另一个实施例的装置的框图。
图4是现有的相变记录介质的多值记录标记的例子。
图5是本发明的另一个实施例的信息记录介质的多值记录重放信号波形的描图的例子。
图6是本发明的另一个实施例的多层信息记录介质的剖面图。
图7是本发明的另一个实施例的信息记录介质的剖面图。
具体实施方式
(实施例1)
(结构、制法)
本发明的记录介质具有图1所示的结构。
该介质如以下所述那样制作。首先,在直径8cm、厚0.6mm的表面上具有磁道间距为0.4微米、深25nm的凹槽内记录(在此是从光点看的凸缘记录)用的跟踪用的沟(宽度0.15微米),通过沟的摆动来表现地址的聚碳酸脂衬底1上,形成膜厚50nm的由(ZnS)80(Sio2)20构成的下部保护层2。再在其上形成膜厚10nm的由Ge2Sb2Te5构成的相变记录膜3。利用在原盘上镀有光致抗蚀膜的镍母盘向衬底表面转写沟图案。如shouhen sun等的磁盘制作方法的论文J.Am.Chem.Soc.vol.124,No.12,p2884(2002)中所述的那样,在上述记录膜上涂抹溶解在氯仿中的聚乙烯亚胺4,并使其干燥。然后,通过等离子体除去附着在凸缘部分上的薄聚乙烯亚胺。这时,凹槽部分还残留有聚乙烯亚胺。接着,使在其周围附着有油酰胺和油酸分子的多个直径15nm的Pt50Fe50合金粒子分散在己烷中进行涂抹,然后,用己烷对没有吸附在聚乙烯亚胺上的粒子进行冲洗,并使之干燥。如图2所示,上述跟踪用的沟每个间隔330nm,在其间存在50nm的没有成为沟的部分。在该沟的各部分以30nm周期适当规则地聚集Pt-Fe粒子,并如图2所示那样地排列。用与记载在特开2000-54012的实施例1中的磁盘用的方法同样的方法制作上述的附着在油酸分子周围的Pt-Fe微粒子。
在此之上形成膜厚20nm的(ZnS)80(SiO2)20保护层7、膜厚60nm的Al90Ti10反射层8。作为记录层,使用已知的Ge2Sb2Te5、Ge5Sb70Te25等的Ge-Sb-Te族记录材料和Ag-In-Sb-Te族记录材料。利用磁控管溅射器装置形成层叠膜。
由于存在上述适当规则排列的大小整齐的Pt-Fe粒子,透过Ge-Sb-Te记录层的光被这些粒子吸收而产生热,该热又被付与记录膜。因此,因为在记录层上会周期性地产生热图形,而在Pt-Fe粒子之间温度急剧下降,所以能够使在记录时形成的相变记录标志的端部(边沿)的位置被规制在与Pt-Fe粒子的端部大致一致的位置。
如在K.M.Leung,Phys.Rev.vol.A33p2461(1986),D.S.Chemla and D.A.B.Miller,Opt.Lett.Vol.11,p522(1986),Schmitt-Rink,D.A.B.Miller and D.S.Chemla,Phys.Rev.vol.B35,p8113(1987),J.W.Haus,N.Kalyaniwalla,R.Inguva and C.M.Bowden,J.Appl.Phys.Vol.65,p1420(1989),P.Poyer,J.P.Goudonnet,R.J.Warmack and T.L.Ferrell,Phys Rev.vol.B35,p3753(1987)中所报告的那样,由于光照射Pt-Fe这样的金属会产生等离子体振子激发,产生与光照射强度和光吸收及反射不成比例的非线形效果。该效果在照射了与金属粒子由于等粒子体振子造成的共谐吸收引起的光波长稍微偏离一点的波长的光的时候比较显著,由于吸收了某一强度以上的光而产生的共谐波长移位,引起正在照射的波长的共谐吸收,光吸收急剧增大。这样的非线形效果在金属微粒子周围具有非线形效果的有机或无机电介质的情况下特别显著,但周围的材料没有非线形效果也会产生。本实施例的油酰胺、油酸和聚乙烯亚胺就只具有一点非线形效果。
作为代替Pt-Fe的材料,理想的是Pt-Co,以及Au、Ag等单体金属。在Au的情况下,理想的是,不是油酰胺、油酸而是在其末端附着有硫醇基的直链的碳氢化合物分子附着在周围。
使用PVP(聚乙烯吡咯烷酮)来代替聚乙烯亚胺也能进行同样的工艺。
在本实施例中,除去了凸缘部分的聚乙烯亚胺,但也可以保留它而使Pt-Fe粒子也自结合化并附着在凸缘部分。但在这种情况下,由于在向凹槽部分记录时,在向凸缘部分索引记录或向凸缘、凹槽记录的情况下,凸缘部分的记录标记的一部分有可能被消去,所以对窄磁道间距化有制约。
在本发明的涂抹或将衬底浸泡在液体中的方法以外,也可以以利用LB法(Langmur-Brodget method)从液体表面聚集的方法形成自结合化膜。但是,记录区域的面积越大,对其全体进行完全自结合化就越难。
在设置有相变记录层的情况下,通过加热,记录膜产生结晶化或非结晶化的相变。
也可以通过热化学变化(例如色素的脱色反应)使折射率、消光系数中的至少一个变化的有机或无机材料层作为别的层而层叠,通过该层的变化也可进行记录。
进而,将紫外线硬化树脂9涂抹在上述盘部件材料的膜表面上,与另一块同样形状的衬底紧贴,而得到盘状信息记录介质。
另外,使记录、重放激光从衬底侧入射。也可以使激光从叠合的衬底侧入射。但是,在这种情况下,决定记录膜厚度时要使得反射率约为10%,并能够得到读出的对比率。
(初始结晶化)
对如前所述那样作成的盘的相变记录层进行如下所述那样的初始结晶化。使盘旋转,并使功率800W、点状的沿介质半径方向形成较长的长圆形的半导体激光(波长约为810nm)通过衬底,照射在记录层上。光点以介质半径方向的光点长度的1/4为单位移动。如此进行初始结晶化。该初始结晶化进行一次也可以,但如果循环进行2次则可以通过初始结晶化稍微减少噪音的上升。
(记录、消去、重放)
对上述记录介质进行信息的记录重放。以下,利用图3说明本信息记录重放的操作。首先,说明采用对每个记录重放的区域改变盘的旋转数的ZCAV(区域参数线性速率)方式的方法作为进行记录重放时的电动机控制方法。
记录装置外部的信息以8比特为1单位,被传送到8-16调制器。在将信息记录到信息记录介质(以下称为光盘)上的时候,是利用将8比特信息变换为16比特的调制方式,即8-16调制方式进行记录的。在该调制方式下,将对应于8比特信息的3T-14T标志长的信息记录到介质上。图中的8-16调制器就进行该调制。进而,此处的T是表示记录信息时的时钟周期。盘以与光点的相对速度为15m/s的线速度旋转。
通过8-16调制器变换了的3T-14T的数字信号被传送到记录波形发生电路,生成多脉冲记录波形。
这时,用来形成记录标记的功率电平为5mW,能够消去的记录标记的中间功率电平为2mW,降低了的功率电平为0.1mW。即使线速度从15m/s改变了,该范围也没有很大变化。在0.2mW以上到2mW以下的范围内就能进行实际的读出。如果以超过2mW的功率电平长时间读取,就会使被记录的数据发生劣化。另外,在上述记录波形发生电路内,使3T-14T的信号在时间序列上交互地与“0”、“1”对应。这时,被照射了高功率电平的脉冲的区域变化为非结晶物质(标记部分)。另外,在上述记录波形发生电路8-6内,在形成为了形成标记部分的一连串高能脉冲序列的时候,具有与对应于标记部分前后的空白部分的长度使多脉冲波形的先头脉冲幅度和最后脉冲幅度变化的方式(适应型记录波形控制)对应的多脉冲波形表,由此产生了能够极力排除在标记间产生的标记间热干涉的影响的多脉冲记录波形。
通过记录波形发生电路产生的记录波形被传送到激光驱动电路,激光驱动电路根据该记录波形,使光头内的半导体激光器发光。
在安装在本记录装置中的光头中,使用光波长400nm的半导体激光作为信息记录用的激光光束。另外,通过透镜NA0.63的物镜将该激光聚光照射在上述盘的记录层上,通过照射激光光束进行信息的记录。
另外,在相变记录层的情况下,结晶状态的介质的反射率较高,记录后变为非结晶状态的区域的反射率较低。如果根据信息信号反复照射脉冲激光,就形成了非结晶质的记录标记序列。
利用上述光头进行被记录的信息的重放。通过将激光光束照射在记录了的标记上,检测从标记和标记以外的部分发射的反射光获得重放信号。通过前置放大器将该重放信号的振幅扩大,在8-16解调器将每个16比特变换为8比特的信息。通过以上动作,结束对记录的标记的重放。
在以以上条件进行标记边缘记录的情况下,作为最短标记的3T标记的标记长度约为0.20μm,而最长标记的14T标记的标记长度约为1.96μm。记录信号还包括在信息信号的开始部分和终端部分重复出现的4T标记和4T空白的冗余数据。在开始部分中还包括VFO。
(标记边缘记录)
在DVD-RAM和DVD-RW中采用能够实现高密度记录的标记边缘记录方式。标记边缘记录是指通过使与形成在记录膜上的记录标记的两端的位置对应于数字数据的1的方式,由此,能够使最短记录标记的长度不是对应于一个基准时钟时间而是2-3个,来实现高密度化。在DVD-RAM中采用8-16调制方式,使其对应于3个基准时钟时间。标记边缘记录方式与使圆形记录标记的中心位置对应于数字数字的1的标记位置记录相比,具有不使记录标记极端变小也能进行高密度记录的长处。进而如果使用记录标记的长度刻度小的调制方式,则提高了记录密度。由于记录介质要求记录标记形状的偏离要小,所以本实施例的记录介质首次可以实现上述记录密度的提高。在此,在刻度为8-16调制的2/3的情况下,能够得到良好的重放信号。
在相变记录介质中,在波形没有变化的情况下,为了得到良好的记录重放特性,理想的是以对应于结晶化速度的最合适的线速度进行记录。但是,在访问盘上半径不同的记录磁道间的时候,为了使线速度相同,就需要在改变转数上花时间。所以在DVD-RAM中,采用ZCLV(区域参数线性速率)方式,使访问速度不减慢而将盘的半径方向分为24个区域,在某个区域内为一定的旋转数,只在必须访问别的区域时改变旋转数。在该方式中,由于一个区域内的最内周的磁道与最外周的磁道的线速度稍有不同,所以记录密度也稍有不同,但是在整个盘区域内能够几乎以最大密度进行记录。
另一方面,对于大多在半径方向上进行访问也不改变旋转数的优点来讲,理想的是采用旋转数一定的CAV记录方式,因为它能够在改变旋转数时抑制电力消耗,所以在便携机器也适用。
防止再结晶也是很重要的。这是因为在由于记录时的记录膜融解后的边缘部分产生再结晶而使作为非结晶记录标记的残留部分变窄的情况下,有必要通过形成规定大小的记录标记使更广泛的区域融解,因而容易使相邻磁道的温度上升。在本发明中,热产生是离散的,另外由于微粒子的存在而形成的凹凸具有阻止结晶成长的作用,所以能够防止不必要的再结晶。
(记录层)
作为记录材料,可以对应于所要求的记录速度和其他特性,使用由Ge2Sb2Te5、Ge4Sb2Te7、Ge5Sb70Te25等组成的Ge-Sb-Te族材料和由Ag4In6Sb65Te25等组成的Ag-In-Sb-Te族材料等,以及已知的用于光盘的各种材料。记录的机制除了相变之外,还可以是不能多次改写的记录层(相变材料层等)自身形成凹坑、显色能的破坏、颜色的变化、相邻的光半导体层和衬底的变化、变形。
在不要求多次改写的情况下,也可以使用有机材料,可以使用各种有机导电材料、被用于CD-R、DVD-R的不一定非要导电性高的色素、光致变色的色素和其他已知的色素。在这些情况下,是利用通过光和/或电流的作用使有机材料自身和/或光导电体层和/或衬底表面产生构造变化而造成光学变化或形成凹坑作为记录机制的。
(界面层)
为了使晶核形成速度和结晶成长速度增快,加速结晶速度,理想的是在上述以外,在与记录膜之间设置界面层。作为界面层的材料理想的是由下述材料组成的组,即Ta2O5等Ta氧化物、Cr2O3等Cr氧化物、Al2O3等Al氧化物、SiO2等Si氧化物、GeO2等Ge氧化物、SnO2等Sn氧化物、ZrO2等Zr氧化物、Co、Ni的氧化物、Cr、Ge、Ti、Al、Si、Ta、Zr、B、Hf的氮化物中的单独或两者以上的混合物。也可以在这些中添加不到50原子%的ZnS。在这中间较理想的是Cr2O3,它能够将多次改写时的反射率级别的变动控制在5%以下,并减少跳动。较理想的还有CoO、Cr2O、NiO,它们的初始结晶时的结晶粒直径均匀,改写初期的跳动上升小。另外,较理想的还有AlN、TaN、TiN、ZrN、BN、CrN、Cr2N、GeN、HfN或Si3N4、Al-Si-N类材料(例如AlSiN2)、Al-Ti-N类材料、Si-Ti-N类材料、Si-O-N类材料,这些氮化物的混合物的粘接力大,外部冲击造成的信息记录介质的劣化小。另外,如果包含大于等于60mol%的Cr80Ge20等Cr-Ge类材料、Cr和Ge的氧化物或氮化物,则可以提高保存寿命,维持高温高湿环境下的记录介质的高性能。
(电介质(绝缘物)保护层)
记录层的周围的绝缘物层的熔点最好是在600℃以上。在使用熔点低于600℃的材料作为绝缘物层的情况下,有可能由于记录时在记录层产生的热和绝缘物层自身产生的发热而劣化,造成光学特性变化,S/N降低。关于上述各层的膜厚、材料,以各自单独的理想范围就能提高记录、重放特性,但通过将各自的理想范围组合,能够更好地提高效果。作为绝缘物层可以使用SiO2、Al2O3、Cr2O3、Ta2O5、GeO2、GeN、Si3N4、(ZnS)80(SiO2)20以及这些的组成比不同的材料等、很多的氧化物、氮化物。也可以使用绝缘性的有机材料。
(衬底)
在本实施例中,使用在表面直接有跟踪用的沟的聚碳酸酯衬底77,具有跟踪用的沟的衬底是指记录、重放波长为λ时,在衬底的整个表面或一部分上具有深度大于、等于λ/15n(n为衬底材料的折射率)的沟的衬底。沟可以是连续一周形成的,也可以是途中分割的。已知沟深度约为λ/12n时,跟踪和噪音的平衡最为理想。该沟宽度可以因位置而不同。可以是具有能够在沟部分和凸缘部分两方进行记录、重放的格式的衬底,也可以是向其中一方进行记录的格式的衬底。在只向凹槽进行记录的类型中,理想的是磁道间距在波长/聚光透镜的NA的0.7倍附近,凹槽宽度在其1/2附近。
在不特别要求价格低的情况下,也可以使用通过利用光致抗蚀膜进行的蚀刻在玻璃衬底上直接形成沟等凹凸图形的类型、从母盘向玻璃衬底上的紫外线硬化树脂层转写了凹凸图形的类型。
在使用例如4元件的狭窄激光作为激光光源的情况下,能够提高近4倍的数据传送速度。
在本实施例的记录介质的相变记录层的下部(光入射侧)和金属超微粒子层的上面设置有透明电极,如果一边向电极的全体施加约5V的电压,一边向应该形成记录标记的地方照射光,则能够通过在Ge-Sb-Te记录层上生成的光载体,使电流只流过照射部分的记录层和金属超微粒子,以低激光能量进行记录,同时能够增加记录的阈值性,形成正确的记录标记。如果将上部保护层减薄到小于等于10nm,则可以不设置Al合金反射层侧的透明电极,用反射层来兼作。向必须施加这样的电压的盘的电力提供能够通过驱动器的固定侧的高输出(150mW)的半导体激光和盘旋转轴的例如围绕托盘器的下部的太阳能电池的组合以非接触的形式进行。从太阳能电池向托盘器布线,并使之与从盘的记录区域向最内周部分延伸的2个或2个以上的透明电极接触。
由于本实施例的记录介质已经磁化,所以即使作为光磁记录介质、磁记录介质特别是热致磁记录介质及光致磁记录介质,也具有忠实于应该向微粒子的磁化方向已朝向一个方向的记录区域记录的信号的优越特性。在这些情况下,就不需要相变材料的层了,但有必要使Pt-Fe等微粒子的易磁化轴方向一致。为此,使用一边施加强磁场一边加热等方法。光照射引起的等离子体振子激发共谐吸收具有即使在弱外部磁场下也容易使磁性反转的效果。在光磁记录的情况下,使用已经熟知的光磁用光头、施加磁场用电磁石。在磁记录的情况下,使用磁头进行记录,而在热致磁记录的情况下,再追加加热器。在光致磁记录的情况下,使用具有线圈、聚光光学系统的记录头。在这些记录方式进行记录时向记录介质付与的能量为磁能、热能、光能。在任一种情况下,进行读出时都使用GMR磁头。在这些情况下,理想的是使用Pt50Co50等Pt-Co类合金作为超微粒子的组成,一边加热一边施加磁场时容易调整易磁化轴。另外,没有设置图1的发射层8上面的层。另外,衬底使用玻璃衬底。
(实施例2)
记录介质和装置结构与实施例1一样,但采用多值记录作为记录方式。改变记录磁道上的单位长度中记录标记所占的比例进行多值记录。在对通常的相变记录介质进行多值记录的情况下,如与M.Horie等的论文PCDOS2001的Proceedings的第20页(2001)的图8一样的图4所示,无法回避记录标记形状产生歪斜,而容易使读出信号产生错误。但是在利用了本发明的自结合的记录介质中,即使进行同样的记录,标记形状也是正确的,如图5的重放信号处理后的波形轨迹例所示的那样,能够正确地得到具有4值水平的重放信号。若依据时刻将图中的4条横线所示的水平切割开,则能够判断出错误率比现有的介质低1个级别的水平。即使是上述文献那样的8值记录,其错误率也只是2倍。
(实施例3)
本实施例是关于多层结构记录介质及使用它的记录装置。
如图6所示,记录介质的第1层是与实施例1同样地被形成的。但是,由于用于实验的光源的波长较长,所以使用磁道间距1微米、沟宽度0.3微米的较广的形式。微粒子不是金属,是在SiO2周围设置厚5nm的花青色素层后,再在周围附着油酸。没有设置Ge-Sb-Te记录层。为了自动定位、跟踪,首先在衬底的表面上设置厚10nm的由半透明的Ag95Pd3Cu2组成的半透明反射层11。在图6中,从图1的记录层到上部保护层之间展示的是未详细写出的宽粗斜线的层13及17等。如下所述制作周围附着了花青色素的SiO2微粒子。将市售的胶质二氧化硅扩散到酒精中,从金络合物向表面析出约1nm的薄Au层。接着,再在其上添加末端附着了硫醇基的花青色素,并使其附着在微粒子的周围。通过喷溅(ZnS)80(SiO2)20,在如此形成的第1层的紧上面形成厚度约100nm的用来隔热的透明隔离层,并再一次与第1层同样地设置将由SiO2和其周围的色素组成的微粒子周期排列的层。但是,第2层的SiO2微粒子的粒子直径与第1层的稍有不同。这样的微粒子的粒子直径的选择是通过在形成作为真空蒸发法等的粒子直径分布的微粒子后,以使其分散在上述液体中的状态放置于离心分离机中,通过选择所采取的层来选择粒子直径的方法实现的。
尽管在图6中未明确示出,由于重复设置涂抹层,所以凹槽的凹凸几乎都被埋在上面的层中,变得平坦了。
从使用波长可变半导体激光作为光源的光头,向如上述那样形成的记录介质上照射选择了波长的激光。
作为波长可变激光,可以使用色素激光和钛蓝宝石激光,但理想的是使用已知的半导体波长可变激光,可以使装置小型化。在此使用了DFB激光,但如果使用DBR激光则具有可以快速选择波长的长处。
如已知的那样,由于根据粒子的直径的不同而在粒状光吸收体中引起共谐吸收的波长不同,所以根据波长引起吸收的层是不同的,能够减少外面的层对吸收的恶劣影响而使里面的层吸收照射光,而对任意的层进行记录、读出。另外,由于将吸收光的部分明确分为层,所以能够在膜厚方向无错误地进行记录和重放。
利用紫外线硬化树脂在上述层叠膜上形成外敷层,并紧贴于同样的另一张盘上。
记录、重放装置的结构等与实施例1是一样的。记录是通过利用强光使色素层脱色进行的。读出是利用由于脱色造成的反射率变化进行的。
通过使色素的变化特别是反射率差容易被看到的光学设计,能够几乎独立地对多层记录膜进行读出。由于能够使每个记录层成为光学等价,所以理想的是将从记录层到记录层的光学膜厚设置为大约是读出光的波长的1个波长量。
如果设置各层的厚度大约为聚焦透镜的焦距深度,并稀释透明有机材料改变色素浓度,使越向内的层的光吸收系数越大,则使焦点位置摆向深度方向,对高密度记录有好处。另外,如果稍微减薄各层的膜厚,则有利于海量全息相片记录等。也可以将各层的光吸收系数设置为几乎相同并减薄膜厚,使高能照射深入到里层,而低能照射只对接近入射侧的层进行记录,如此进行多值记录。
也可以将全部的层划分为若干组,例如在本实施例的情况下,将4层划分为2层一组。
进而,隔热层也可以是透明无机电介质,但如果是有机材料,则与上述同样的理由在光学上是理想的。隔热层还可以是具有导电性的,但没有则更理想,可以使用改性聚丙烯腈纤维低聚物、聚合物、金属肽菁染料的真空镀膜等许多材料。
多层膜也可以全部在聚焦透镜的焦点深度内,可以每几层(例如每3层)就夹着一层厚20-24微米的隔离层,改变焦点位置来进行各层的记录、重放。在这种情况下,在使用2层以上的隔离层的情况下,最好在光学系统中设置补偿球面象差的元件。
可以与实施例1同样地使各个多层膜的用来记录的自结合超微粒子体层被透明电极夹着,一边施加电压一边进行记录。在这种情况下,如果在各个透明电极间设置无机或有机的已知的电致变色材料层,则能够只改变施加了电压的层的电致变色层的颜色,在选择了里层时减少外层对光吸收的恶劣影响。
可以使用实施例1中所述的能够用于“电介质(绝缘物)保护膜”的各种材料来代替用于微小粒子的SiO2。
(实施例4)
在本实施例中,记录介质与实施例1一样,但使用周围附着了有机分子的相变记录材料的微粒作为微粒子状无机物。通过一边使记录材料在低真空中蒸发,一边喷涂丙烯基电介质单体来制作相变记录材料的微粒,并使其扩散在有机溶剂中进行离心分离,取出其中的一部分,将粒子直径控制在正负10%范围内。
如下这样制作记录介质。首先,如图7所示那样,在直径8cm、厚0.6mm的表面具有磁道间距为0.4微米的深23nm的凹槽内记录(在此,从光点看是凸缘记录)用的跟踪用沟(宽0.15微米),在通过沟的摆动来表现地址的聚碳酸酯衬底21上,形成膜厚30nm的SiO2。利用在原盘的光致抗蚀膜上经过电镀的镍母盘向衬底表面转写沟图案。在上述SiO2层上涂抹被溶于氯仿的聚乙烯亚胺,并使其干燥。接着,将周围附着有油酰胺和油酸分子的相变材料Ge4Sb2Te7的直径15nm的许多粒子溶于己烷中并涂抹,然后,用己烷对没有吸附在聚乙烯亚胺上的粒子进行冲洗。上述跟踪用的沟每个间隔65nm,在其间存在约10nm的没有成为沟的部分。在该沟的各部分以15nm周期适当规则地聚集记录材料粒子,与图2所示的那样地排列。在其上形成膜厚20nm的(ZnS)80(SiO2)20保护层、60nm的Al90Ti10反射层。作为相变材料,使用已知的Ge2Sb2Te5、Ge5Sb70Te25等Ge-Sb-Te类记录材料、Ag-In-Sb-Te类记录材料。利用磁控管喷溅装置形成层叠膜。
由于存在上述适当规则排列的大小整齐的相变材料粒子,照射的光被这些粒子吸收而产生热。因此,热图形也是周期性的,而由于在相变材料粒子之间温度急剧下降,所以记录时发生相变的相变材料微粒子的范围就变得正确了。
进而,向上述盘部件材料的膜表面涂抹紫外线硬化树脂,并与另一张同样形状的衬底紧贴,而得到盘状信息记录介质。
此外,记录·重放方法和实施例1相同,使记录·重放激光从衬底一侧入射。
(实施例5)
在本实施例中,使用与实施例4一样的记录介质,但使用C60等颗粒状(椭圆球状)的原子集合来代替相变记录材料的微粒子。使该原子集合与聚乙烯亚胺等的聚合物的侧链结合,形成适当规则的排列。利用强光激发C60,通过聚合物的变形进行记录。利用变形引起的光的折射和散射对记录的信息进行读出。这样,作为本发明的变形,使用由球状碳、形成微小粒状的有机分子的自结合记录介质也能实现高密度记录。在这种情况下,可以使粒状有机分子周围的有机分子吸收光,也可以利用粒状有机分子进行吸收,而使周围的有机分子透明。
在本发明的记录介质中,由于能够使记录标记的形状忠实于应该记录的信号,所以能够进行高密度记录。
另外,与现有技术相比能够大幅度地进行多层化,能够提高实际的记录密度,使每张记录介质的记录容量大幅度地提高。
Claims (6)
1.一种信息记录介质,通过能量照射记录信息,其特征在于:至少把具有沟状的记录磁道的衬底的表面用绝缘物材料构成;在至少一部分所述沟状部分具有记录材料,其中该记录材料为在上述记录磁道方向上以一定的周期适当规则地排列了光吸收度与其周围不同的无机物的材料。
2.根据权利要求1所述的信息记录介质,其特征在于:上述信息记录介质具有与上述记录材料相邻或接近的相变记录层。
3.根据权利要求1所述的信息记录介质,其特征在于:上述无机物由相变记录材料的微粒子构成。
4.根据权利要求1所述的信息记录介质,其特征在于:在上述信息记录介质的膜厚方向上形成多层的上述记录材料。
5.根据权利要求1所述的信息记录介质,其特征在于:上述无机物是由多个碳原子组成的独立的原子群。
6.一种信息记录方法,其特征在于:
使用包括:形成了断续的沟状的记录磁道的基板;形成于该基板表面且在表面形成了上述记录磁道的绝缘物材料;形成于该绝缘物材料上的记录磁道上的、包含在该记录磁道的磁道方向上以一定的周期适当规则地排列了的、至少一部分的光吸收度与其周围不同的无机物的第一层;以及利用热引起相变或化学变化的第二层;的信息记录介质,
在上述第一层上照射光;
利用基于该光照射的第一层的加热,在上述第二层上形成记录标记,在上述信息记录介质上记录信息。
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