CN100397157C - 阵列基板及平面显示装置 - Google Patents

阵列基板及平面显示装置 Download PDF

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Publication number
CN100397157C
CN100397157C CNB2004100898783A CN200410089878A CN100397157C CN 100397157 C CN100397157 C CN 100397157C CN B2004100898783 A CNB2004100898783 A CN B2004100898783A CN 200410089878 A CN200410089878 A CN 200410089878A CN 100397157 C CN100397157 C CN 100397157C
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CN
China
Prior art keywords
gate electrode
pixels
array substrate
pixel
electrode wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB2004100898783A
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English (en)
Chinese (zh)
Other versions
CN1612004A (zh
Inventor
田畠弘志
川村哲也
河村真一
稻田克彦
武田笃
今井信雄
高见明宏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Display Central Inc
Japan Display Inc
Original Assignee
Toshiba Matsushita Display Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Matsushita Display Technology Co Ltd filed Critical Toshiba Matsushita Display Technology Co Ltd
Publication of CN1612004A publication Critical patent/CN1612004A/zh
Application granted granted Critical
Publication of CN100397157C publication Critical patent/CN100397157C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136204—Arrangements to prevent high voltage or static electricity failures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
CNB2004100898783A 2003-10-28 2004-10-28 阵列基板及平面显示装置 Expired - Lifetime CN100397157C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003367276A JP4319517B2 (ja) 2003-10-28 2003-10-28 アレイ基板および平面表示装置
JP2003367276 2003-10-28

Publications (2)

Publication Number Publication Date
CN1612004A CN1612004A (zh) 2005-05-04
CN100397157C true CN100397157C (zh) 2008-06-25

Family

ID=34645329

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004100898783A Expired - Lifetime CN100397157C (zh) 2003-10-28 2004-10-28 阵列基板及平面显示装置

Country Status (6)

Country Link
US (1) US7564511B2 (enExample)
JP (1) JP4319517B2 (enExample)
KR (1) KR100777850B1 (enExample)
CN (1) CN100397157C (enExample)
SG (1) SG111282A1 (enExample)
TW (1) TW200527053A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5514418B2 (ja) * 2008-09-05 2014-06-04 株式会社ジャパンディスプレイ 液晶表示装置
CN103217843B (zh) * 2013-03-25 2016-02-17 京东方科技集团股份有限公司 阵列基板及其制造方法和液晶面板
JP2015072434A (ja) * 2013-10-04 2015-04-16 株式会社ジャパンディスプレイ 液晶表示装置
CN105185740B (zh) * 2015-06-26 2019-01-15 京东方科技集团股份有限公司 一种阵列基板及其制备方法、显示面板和显示装置
JP6947550B2 (ja) * 2017-06-27 2021-10-13 株式会社ジャパンディスプレイ 表示装置
CN111554730B (zh) * 2020-06-09 2022-12-02 云谷（固安）科技有限公司 一种显示面板及显示装置
CN114578624B (zh) * 2021-12-29 2023-01-17 滁州惠科光电科技有限公司 阵列基板及显示面板

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5227901A (en) * 1991-03-20 1993-07-13 Kabushiki Kaisha Toshiba Liquid crystal display device
US5781253A (en) * 1995-10-31 1998-07-14 International Business Machines Corporation Liquid crystal display having electrostatic discharge protection and method for manufacturing the same
CN1388404A (zh) * 1995-10-03 2003-01-01 精工爱普生株式会社 有源矩阵基板及其制造方法
US6515720B1 (en) * 1998-07-14 2003-02-04 Kabushiki Kaisha Toshiba Active matrix liquid crystal display device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3116295B2 (ja) * 1993-05-25 2000-12-11 松下電器産業株式会社 アクティブマトリクス基板の製造方法
JP3006584B2 (ja) * 1998-05-14 2000-02-07 日本電気株式会社 薄膜トランジスタアレイ
KR100695303B1 (ko) * 2000-10-31 2007-03-14 삼성전자주식회사 제어 신호부 및 그 제조 방법과 이를 포함하는 액정 표시장치 및 그 제조 방법
TW588179B (en) * 2001-07-25 2004-05-21 Hannstar Display Corp Substrate structure for thin film transistor array
JP2003110019A (ja) 2001-10-01 2003-04-11 Ricoh Co Ltd 半導体装置
JP4082493B2 (ja) * 2002-06-06 2008-04-30 株式会社 日立ディスプレイズ 液晶表示装置
JP2004054069A (ja) * 2002-07-23 2004-02-19 Advanced Display Inc 表示装置及び表示装置の断線修復方法
JP3791517B2 (ja) * 2002-10-31 2006-06-28 セイコーエプソン株式会社 電気光学装置及び電子機器

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5227901A (en) * 1991-03-20 1993-07-13 Kabushiki Kaisha Toshiba Liquid crystal display device
CN1388404A (zh) * 1995-10-03 2003-01-01 精工爱普生株式会社 有源矩阵基板及其制造方法
US5781253A (en) * 1995-10-31 1998-07-14 International Business Machines Corporation Liquid crystal display having electrostatic discharge protection and method for manufacturing the same
US6515720B1 (en) * 1998-07-14 2003-02-04 Kabushiki Kaisha Toshiba Active matrix liquid crystal display device

Also Published As

Publication number Publication date
SG111282A1 (en) 2005-05-30
KR20050040763A (ko) 2005-05-03
TWI294052B (enExample) 2008-03-01
JP2005134446A (ja) 2005-05-26
JP4319517B2 (ja) 2009-08-26
TW200527053A (en) 2005-08-16
US20050140570A1 (en) 2005-06-30
CN1612004A (zh) 2005-05-04
US7564511B2 (en) 2009-07-21
KR100777850B1 (ko) 2007-11-21

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee

Owner name: TOSHIBA MOBILE DISPLAY CO., LTD.

Free format text: FORMER NAME: TOSHIBA MATSUSHITA DISPLAY TECHNOLOGY LTD.

Owner name: JAPAN DISPLAY MIDDLE INC.

Free format text: FORMER NAME: TOSHIBA MOBILE DISPLAY CO., LTD.

CP01 Change in the name or title of a patent holder

Address after: Saitama Prefecture, Japan

Patentee after: JAPAN DISPLAY Inc.

Address before: Saitama Prefecture, Japan

Patentee before: Toshiba Mobile Display Co.,Ltd.

CP03 Change of name, title or address

Address after: Saitama Prefecture, Japan

Patentee after: Toshiba Mobile Display Co.,Ltd.

Address before: Tokyo, Japan

Patentee before: TOSHIBA MATSUSHITA DISPLAY TECHNOLOGY Co.,Ltd.

CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20080625