CN100380642C - 双侧排热装置与方法 - Google Patents

双侧排热装置与方法 Download PDF

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Publication number
CN100380642C
CN100380642C CNB038139790A CN03813979A CN100380642C CN 100380642 C CN100380642 C CN 100380642C CN B038139790 A CNB038139790 A CN B038139790A CN 03813979 A CN03813979 A CN 03813979A CN 100380642 C CN100380642 C CN 100380642C
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microelectronic component
substrate
insertion member
radiator
heat
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CN1663043A (zh
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吉尔罗伊·范登托普
邱嘉斌
拉金德然·奈尔
李延良
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Intel Corp
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Intel Corp
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Abstract

本发明描述了将微电子器件平行安装到基片上的方法和装置，所述基片具有插入构件和两个散热器，所述基片的每一侧上各有一个所述的散热器。

Description

双侧排热装置与方法
相关申请：本申请与2001年12月21日递交的系列号为10/026,145的申请相关。
技术领域
本发明涉及计算机系统中的排热。更具体地，本发明涉及用于平行安装到基片上的微电子器件的双侧散热器。
背景技术
随着现代微电子器件的速度和元件密度的不断增长，由这些微电子器件所产生的热量也普遍地增加。因此，希望有更好地将来自微电子器件，特别是具有更高性能的器件的热量耗散掉的技术。在本公开所使用中的术语“微电子器件”确定为宽泛意义的，并且包括，但不局限于，电子和光电子器件，如微处理器、专用集成电路(ASICs)、芯片组和类似器件。尽管为了清楚起见，术语“微电子器件”用单数表示，但也可确定为包括多个单个的器件。
实际上，在利用电子元件的所有系统中，微电子器件安装在基片上，该基片有利于微电子器件和其他系统元件之间电信号以及功率和接地的分配。但是，该基片通常不是由特别好的热导体材料制成的。这种基片的例子包括有机焊盘格栅阵列(OLGAs)、塑料焊盘格栅阵列(PLGAs)和印刷电路板(PCBs)。但是本发明并不是要限定在利用任何特定基片材料或器件安装结构的实施方案。
希望能够在器件的两个侧面都提供冷却，同时除去基片的较大的热障。
附图说明
图1描述了通过利用插座连接安装在基片上的微电子器件和散热器的横截面。
图2描述了利用插入构件安装在基片上的微电子器件和散热器。
图3示出了根据本发明的实施方案，安装在具有两个散热器的基片上的微电子器件和插入构件。
图4示出了根据本发明实施方案的另一个双散热器组件。
图5示出了根据本发明实施方案的第三个双散热器组件。
具体实施方式
本发明在具有平行安装到基片上的微处理器的系统中提供双侧散热器，使得可达到现有技术中的热耗散的两倍。基片通常是差的热导体，所以不易在基片方向上耗散热量。图1描述了用来将微电子器件4安装在基片6上的一种结构2的横截面。通常使用插座8以将微电子器件4以电气和机械的方式耦合到基片6上。考虑到基片6导热性相对较差，可以很容易地看出，大部分由微电子器件10在结构2中产生的热量将通过散热器12耗散掉。散热器(如散热器12)的设计对本领域中的普通技术人员是公知的，而且本发明不打算被限定到任何特定的散热器设计细节上，特定的散热器设计细节如，但并不局限于，用于散热器的材料或几何结构。
本发明使用用于安装微电子器件的插入构件(interposer)装置，该插入构件装置下面将进一步讨论，以及在基片中的开口，该开口允许一个第二散热器被包括在具有微电子器件的基片侧上。
在安装微电子器件领域中的一项近来的进展是采用在微电子器件4和基片6之间的插入构件。就当前公开的目的而言，术语“插入构件”被用于最宽泛的意义：插入或位于微电子器件4和基片6之间的装置。在这个意义上，图1中的插座8是插入构件的一种形式。为了用在本发明中，所述插入构件优选地具有高导热性，下面将解释其原因。注意，对本发明的目的来说，特定插入构件的内部设计细节不是重要的。此外，本发明不打算限定于使用任何特定插入构件设计，如果它是导热的话。本发明的主题也不是插入构件的设计，而仅仅是如上面所宽泛定义的插入构件被用于本发明。记住这一点，当前的公开将功能性地描述许多种可能的插入构件设计中的少数几种，用以更好地理解本发明的内容，并且决不打算将本发明的范围限定到使用所描述的插入构件。
利用插座8连接微电子器件4和基片6已经成为习惯做法很多年了。但是，传统上插座8仅是机械和电连接的一种手段，其不是处理或转换电信号或功率的元件，而是信号“经过”的元件。随着微电子器件4在更低电压下工作时的速度和一般处理能力方面的发展，更好地控制微电子器件4的功率以及输入和输出(I/O)信号的质量的需要变得明显。例如，不希望在大电流和低电压情况下，特别是在具有高dI/dT信号的情况下出现IR降，并且该IR降使处理器的性能降低。现有技术中对这种“功率问题”的解决办法通常是利用如焊盘侧电容器(land side capacitors)的技术，该电容器直接设置在基片6上用于功率去耦。
一种能改善提供给处理器的功率信号的质量的功率问题解决方案是提供插入构件，该插入构件直接耦合到微电子器件4，包含电压调节(VR)系统。这样，可以将相对较高的电压提供给紧靠着处理器的插入构件装置，并且在插入构件内电压被减小并被分配给微电子器件4。
图2说明了一种具有安装在微电子器件4和基片6之间的薄插入构件16和散热器12的配置。尽管图2中示出的微电子器件4和插入构件16具有大致相同的尺寸，但不要求它们一定要这样。在基片6和微电子器件4之间传送的信号可以在插入构件16的平面内路由(route)或在图2中的“水平”面中路由，比如到VR系统或来自VR系统，以及“垂直地”通过插入构件16内的通路(vias)。
本发明利用插入构件16的能力在其平面内分配电信号，并允许在基片6内设开口，该开口还可以为第二散热器提供方便。图3示出了本发明的实施方案，该实施方案具有通过基片6内的开口20安装的第二散热器18。在这个实施方案中，有两条到两个散热器12和18的主要热传递路径，这显著地提高了耗散来自微电子器件4的热量的能力。散热器12和18可以是类似的，或者它们可以使用不同的材料和/或结构。通过提供用于微电子器件4和基片6之间的电信号路径，以及提供对微电子器件4的机械支撑，插入构件16允许在基片6内形成开口20，以用于通过基片6的第二热传递路径。因此，本发明可以采用插入构件16来解决“功率问题”和“热问题”。
图4说明了本发明的另一个实施方案，该实施方案具有安装在插入构件16下面并通过基片6内的开口20的微电子器件4，还具有在基片6的相对侧上的两个散热器12和18。基片6和插入构件16之间的电连接22优选为镀金铜焊盘(pads)，并在微电子器件4和插入构件16之间具有铜对铜连接24。在这个实施方案中使用弹簧片26和连接杆28可允许形成所述元件的无插座(socket-less)压配组件，同时提供安全的电连接。与微电子器件4和插入构件16接触的散热器12和18的表面优选地是由高导热性热界面材料(TIM)如聚合物基的、焊料基的或金刚石的膏来制备的。这些TIM对于本领域中的普通技术人员是公知的。注意，图4中所示的实施方案仅仅是许多种能够允许散热器位于基片6两侧而对微电器件4和插入构件16进行配置的方式当中的一种，并且本发明并不打算限定到任何特定的设计细节上。
插入构件16的设计并不打算限定于帮助电压调节和机械地桥接开口20。本发明其他的实施方案还可以结合存储器、光信号传播器件以及插入构件16内的元件，如电容器和电感器。图5示出了本发明的一个实施方案，在该实施方案中，在插入构件16内嵌入有两个硅片(dice)30和32。嵌入的片30和32在芯38内优选地是被封装材料34包围并通过该封装材料34被定位。在插入构件16的微电子器件4一侧上的增加层36与插入构件16内以及连接组22和24之间的功率和I/O信号相接触。微电子器件4以及嵌入在插入构件内的片30和32的相关尺寸可改变，并可以通过选择使插入构件16的电和热性能最优。图5示出了在基片6和插入构件16之间的触点22的两种不同的结构，分别是插针(pins)和接触焊盘(pads)，以说明电耦合所述两个元件的许多种可能方式中的两种。但是，本发明除了由权利要求书的条款所做的限定之外，不打算被限定于任何特定的电连接，或者任何其他的设计细节。
与无源插座8不同，具有有源元件的插入构件16会产生热量，虽然这些热量通常远低于由微电子器件4产生的热量。本发明的双散热器(12和18)提供的热解决方案，不仅提供了用于来自插入构件16的热负载的热路经，还典型地通过插入构件16将来自微电子器件4的部分热量耗散到第二散热器。分别对微电子器件4和插入构件16使用120瓦和30瓦的热负载进行试验，显示出通过连接到插入构件16的散热器耗散掉了大约40％来自微电子器件4的热量。这个第二热传递路径可以显著地降低微电子器件4和插入构件16的工作温度，从而提高两者的性能。
尽管以上公开的内容提供了用于说明的本发明目的各种实施方案和实施例，但这些实施方案和实施例并不打算成为本发明所有的可能实现情况的穷举清单，并且不应该被解释为是用来限定本发明的。本领域中的普通技术人员应该认识到，利用本发明公开的内容，本发明可以用对本公开内容中的详细细节的多种修改和改变来实施。同样，为了避免照搬本发明，没有示出所有的细节、公知的结构、器件以及对于本领域的普通技术人员公知的技术。但是，本发明意在覆盖较宽范围的技术、器件和公知的结构。因此，本发明意在限定在仅由所附权利要求书的范围所限定的范围内。

Claims (30)

1.在具有平行安装到基片上的微电子器件的组件中的一种双侧排热装置，所述排热装置包括：
电耦合到微电子器件和基片的插入构件，用于在微电子器件和基片之间传递电信号；
热耦合到所述微电子器件并通过所述基片中的开口延伸的用于耗散热量的第一散热器；以及
热耦合到所述插入构件用于耗散热量的第二散热器。
2.根据权利要求1的装置，其中：
所述第一和第二散热器中的至少一个由铝制成。
3.根据权利要求1的装置，其中：
所述第一和第二散热器中的至少一个由铜制成。
4.根据权利要求1的装置，其中：
所述第一和第二散热器中的至少一个由铝铜复合物制成。
5.根据权利要求1的装置，其中：
所述第一和第二散热器由导热性复合材料制成。
6.根据权利要求1的装置，其中：
所述插入构件包括电压调节系统。
7.根据权利要求1的装置，其中：
所述插入构件包括存储器。
8.根据权利要求1的装置，其中：
所述插入构件包括光信号系统。
9.根据权利要求1的装置，其中：
所述插入构件和所述微电子器件通过无插座电连接耦合。
10.根据权利要求9的装置，其中：
所述插入构件和所述基片通过无插座电连接耦合。
11.根据权利要求1的装置，其中：
所述插入构件包含电有源元件。
12.在具有平行安装到基片上的微电子器件的组件中的一种双侧排热装置，所述排热装置包括：
电耦合到微电子器件和基片的插入构件，用于在微电子器件和基片之间传递电信号；
热耦合到所述插入构件并通过所述基片中的开口延伸的用于耗散热量的第一散热器；以及
热耦合到微电子器件用于耗散热量的第二散热器。
13.根据权利要求12的装置，其中：
所述第一和第二散热器中的至少一个由铝制成。
14.根据权利要求12的装置，其中：
所述第一和第二散热器中的至少一个由铜制成。
15.根据权利要求12的装置，其中：
所述第一和第二散热器中的至少一个由铝铜复合物制成。
16.根据权利要求12的装置，其中：
所述第一和第二散热器由导热性复合材料制成。
17.根据权利要求12的装置，其中：
所述插入构件包括电压调节系统。
18.根据权利要求12的装置，其中：
所述插入构件包括存储器。
19.根据权利要求12的装置，其中：
所述插入构件包括光信号系统。
20.根据权利要求12的装置，其中：
所述插入构件和微电子器件通过无插座电连接耦合。
21.根据权利要求20的装置，其中：
所述插入构件和所述基片通过无插座电连接耦合。
22.根据权利要求12的装置，其中：
所述插入构件包含电有源元件。
23.一种用于耗散来自安装在基片上的微电子器件的热量的装置，所述装置包括：
在微电子器件的基片侧上热耦合到微电子器件用于耗散来自微电子器件的热量的第一散热器；并且
其中所述第一散热器通过基片内的开口延伸。
24.根据权利要求23的装置，进一步包括：
热耦合到插入构件用于耗散热量的第二散热器，所述插入构件被电耦合到所述微电子器件和所述基片之间。
25.一种用于耗散来自微电子器件的热量的装置，该微电子器件通过插入构件连接到基片，所述装置包括：
在硅插入构件的基片侧上直接机械耦合并且直接热耦合到插入构件的第一散热器。
26.根据权利要求25的装置，进一步包括：
热耦合到微电子器件用于耗散热量的第二散热器。
27.一种冷却微电子器件的方法，包括：
通过插入构件将微电子器件电连接到基片上；
将所述微电子器件和所述插入构件安装到所述基片内的开口上方；
将所述微电子器件和所述插入构件热连接到一对散热器；并且
其中所述一对散热器中之一延伸通过基片内的开口。
28.根据权利要求27的方法，进一步包括：
通过所述插入构件调节提供给所述微电子器件的电功率。
29.一种冷却微电子器件的方法，包括：
通过一对散热器耗散来自微电子器件和插入构件单元的热量，所述一对散热器位于由基片所界定的平面的相对侧上；以及
通过所述基片中的开口将所述散热器对中的第一个散热器连接到所述微电子器件和插入构件单元。
30.根据权利要求29的方法，进一步包括：
将所述散热器对中的第二个散热器在与基片相对的一侧上连接到所述微电子器件和插入构件单元。
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