CN100359699C - 互补式金属氧化物半导体影像传感器的制作方法 - Google Patents
互补式金属氧化物半导体影像传感器的制作方法 Download PDFInfo
- Publication number
- CN100359699C CN100359699C CNB2004101041575A CN200410104157A CN100359699C CN 100359699 C CN100359699 C CN 100359699C CN B2004101041575 A CNB2004101041575 A CN B2004101041575A CN 200410104157 A CN200410104157 A CN 200410104157A CN 100359699 C CN100359699 C CN 100359699C
- Authority
- CN
- China
- Prior art keywords
- manufacture method
- image sensor
- support plate
- cmos image
- sensing chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
Description
Claims (20)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2004101041575A CN100359699C (zh) | 2004-12-30 | 2004-12-30 | 互补式金属氧化物半导体影像传感器的制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2004101041575A CN100359699C (zh) | 2004-12-30 | 2004-12-30 | 互补式金属氧化物半导体影像传感器的制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1797776A CN1797776A (zh) | 2006-07-05 |
CN100359699C true CN100359699C (zh) | 2008-01-02 |
Family
ID=36818675
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004101041575A Expired - Fee Related CN100359699C (zh) | 2004-12-30 | 2004-12-30 | 互补式金属氧化物半导体影像传感器的制作方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN100359699C (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105448877B (zh) * | 2011-08-01 | 2019-08-23 | 日月光半导体制造股份有限公司 | 半导体封装 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05259483A (ja) * | 1992-01-14 | 1993-10-08 | Samsung Electron Co Ltd | 光電変換用半導体パッケージ |
CN2603519Y (zh) * | 2003-02-09 | 2004-02-11 | 胜开科技股份有限公司 | 具有涂布层的影像感测器 |
CN1476065A (zh) * | 2003-05-15 | 2004-02-18 | 王鸿仁 | 影像传感器封装法 |
CN1549320A (zh) * | 2003-05-12 | 2004-11-24 | 相互股份有限公司 | 多层线路的薄型集成电路制造方法 |
US20040244192A1 (en) * | 2003-06-03 | 2004-12-09 | Hsin Chung Hsien | Method for packaging an image sensor |
-
2004
- 2004-12-30 CN CNB2004101041575A patent/CN100359699C/zh not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05259483A (ja) * | 1992-01-14 | 1993-10-08 | Samsung Electron Co Ltd | 光電変換用半導体パッケージ |
CN2603519Y (zh) * | 2003-02-09 | 2004-02-11 | 胜开科技股份有限公司 | 具有涂布层的影像感测器 |
CN1549320A (zh) * | 2003-05-12 | 2004-11-24 | 相互股份有限公司 | 多层线路的薄型集成电路制造方法 |
CN1476065A (zh) * | 2003-05-15 | 2004-02-18 | 王鸿仁 | 影像传感器封装法 |
US20040244192A1 (en) * | 2003-06-03 | 2004-12-09 | Hsin Chung Hsien | Method for packaging an image sensor |
Also Published As
Publication number | Publication date |
---|---|
CN1797776A (zh) | 2006-07-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8605211B2 (en) | Low rise camera module | |
CN100378933C (zh) | 具有层合晶穴的半导体封装构造的制造方法 | |
EP2373059B1 (en) | Semiconductor device and microphone | |
US8553142B2 (en) | Camera lens module and manufacturing method thereof | |
US20040017000A1 (en) | Integrated circuit package with exposed die surfaces and auxiliary attachment | |
CN101315939A (zh) | 具有晶粒接收开孔的芯片尺寸影像传感器及其制造方法 | |
TWI482271B (zh) | 一種具有雙層基板之影像感測器封裝結構及方法 | |
CN103247650B (zh) | 一种板载芯片模组及其制造方法 | |
CN101026148A (zh) | 光电芯片的多芯片增层封装构造及其制造方法 | |
US8063313B2 (en) | Printed circuit board and semiconductor package including the same | |
US20090140426A1 (en) | Flip chip package and method for manufacturing the same | |
CN102270589B (zh) | 半导体元件的制造方法和相应的半导体元件 | |
CN100359699C (zh) | 互补式金属氧化物半导体影像传感器的制作方法 | |
CN100539100C (zh) | 封装结构及其制造方法 | |
US20040017002A1 (en) | Integrated circuit device with exposed upper and lower die surfaces | |
US20090184404A1 (en) | Electromagnetic shilding structure and manufacture method for multi-chip package module | |
TWI427748B (zh) | 影像感測晶片封裝結構 | |
KR100756245B1 (ko) | 카메라 모듈 | |
US7432127B2 (en) | Chip package and package process thereof | |
CN2922128Y (zh) | 感光组件封装结构 | |
CN106816420A (zh) | 一种声波元件封装结构及其制造方法 | |
TWI238478B (en) | Manufacturing method for CMOS image sensor | |
US20080303111A1 (en) | Sensor package and method for fabricating the same | |
TW566067B (en) | Package method of CMOS/CCD image sensor | |
TWI242819B (en) | Method for manufacturing chip on glass type image sensor and structure of the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
EE01 | Entry into force of recordation of patent licensing contract |
Assignee: South Asia circuit board (Kunshan) Co., Ltd. Assignor: Nanya Circuit Board Co., Ltd. Contract fulfillment period: 2008.2.1 to 2018.1.31 contract change Contract record no.: 2009990000537 Denomination of invention: Method for fabricating image sensor in CMOS Granted publication date: 20080102 License type: Exclusive license Record date: 2009.5.22 |
|
LIC | Patent licence contract for exploitation submitted for record |
Free format text: EXCLUSIVE LICENSE; TIME LIMIT OF IMPLEMENTING CONTACT: 2008.2.1 TO 2018.1.31; CHANGE OF CONTRACT Name of requester: NANYA (KUNSHAN) CIRCUIT BOARD CO.,LTD. Effective date: 20090522 |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080102 Termination date: 20141230 |
|
EXPY | Termination of patent right or utility model |