CN100355055C - Method for controlling pre-aligning of silicon wafer - Google Patents
Method for controlling pre-aligning of silicon wafer Download PDFInfo
- Publication number
- CN100355055C CN100355055C CNB2005101166950A CN200510116695A CN100355055C CN 100355055 C CN100355055 C CN 100355055C CN B2005101166950 A CNB2005101166950 A CN B2005101166950A CN 200510116695 A CN200510116695 A CN 200510116695A CN 100355055 C CN100355055 C CN 100355055C
- Authority
- CN
- China
- Prior art keywords
- silicon wafer
- breach
- circle
- center
- sampling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The present invention belongs to the field of computer numerical control, particularly to a control method of silicon wafer prealignment in the field of IC manufacture. The method comprises a silicon wafer positioning method and a gap positioning method, wherein the silicon wafer positioning method is composed of the circumference sampling of silicon wafers, data pretreatment, circular fitting and silicon wafer centering; the gap positioning method is composed of coarse positioning to gaps, fine sampling to gaps, gap fitting and center rotation of the gap to an assigned angle. The present invention can greatly improve prealignment precision.
Description
Technical field
The invention belongs to the Computer Control Technology field, particularly IC makes the control method of field Silicon Wafer prealignment.
Background technology
The control of Silicon Wafer prealignment is one of link important in the IC manufacturing process.Because the mask aligner visual field is very little, therefore, Silicon Wafer must be carried out prealignment and handle Silicon Wafer being sent to before mask aligner exposes, make to be sent within the visual field that is marked at mask aligner of Silicon Wafer on the exposure desk.Specifically, the process of Silicon Wafer prealignment control is exactly by certain method, makes the center of circle of Silicon Wafer within certain scope, and the breach of Silicon Wafer rests on the angle of appointment simultaneously, promptly comprises location, the center of circle and two main processes of breach detection.
Realize that the required equipment of said process generally comprises following several sections: optical detector is used to gather the edge and the breach of Silicon Wafer; A rotary unit is used to drive Silicon Wafer and rotates; To heart actuator, be used for the center of circle of Silicon Wafer is moved on to the pivot of rotary unit.The Silicon Wafer prealignment mainly adopts the method for mechanical type prealignment and optics prealignment or both mixing.Adopt mechanical structure to realize the location, the center of circle of Silicon Wafer in No. 6932558, the US patent.This equipment has 3 to be mutually the roller bearing that 120 degree distribute, and the inside contractile motion of roller bearing promotes Silicon Wafer, makes it to move to appointed positions.And drive the rotation of Silicon Wafer by the rotation of roller bearing.About the location in the Silicon Wafer center of circle, more be to adopt optical measurement, the mode that positions by plant equipment then.It is a variety of to adopt the mode in the optical alignment Silicon Wafer center of circle to have, and adopts a line array CCD to detect the Silicon Wafer edge as in No. 4880384, the US patent.The rotation Silicon Wafer detects maximum, and after maximum rotated to the line array CCD direction mobile Silicon Wafer to circle centre position.Repeat rotation, detect maximum, mobile Silicon Wafer, up to the center of circle within particular range.This method supposition Silicon Wafer radius size is known, and center of circle locating accuracy and efficient are very low.Adopt 4 pairs of detectors to detect the edge of Silicon Wafers in No. 4887904, the US patent, 90 degree evenly distribute at interval, also need the another one detector to detect the position of breach simultaneously.In addition, in No. 5194743, the US patent, adopt 3 pairs of some array detectors to detect the edge of Silicon Wafers, a pair of linear array detector detects cuts edge.In No. 5258832, the US patent, two some array detectors are used to locate the center of circle, and the another one linear array detector is used for detecting cuts edge.
The Silicon Wafer breach generally adopts optical detector to detect.Simple method can be by after the location, the Silicon Wafer center of circle, by thin sample detecting minimum value sampled point, in No. 4880384, US patent.Though this method is used for detecting and cuts edge, and is equally applicable to the detection of breach.The weak point of this method is that the size of sampling density is very big to the influence of breach (perhaps cutting edge), and sampling density is high more, and breach detects accurate more, and time and space complexity are also high more.One section cosine curve of match at first in No. 4752898, the US patent is asked difference with the true samples curve then, obtains the initial position of cutting edge.This method also can very be applicable to the preliminary searching of breach effectively.Yet about the correction of side cut position, only utilized two adjacent points of initial position to calculate in this patent, be subjected to the influence of sampled point precision.US patent 6275742 has proposed the position that cross-correlation method is found the solution breach, but the weak point of this method need to be a known breach figure and the data that sampling obtains to compare.The breach data of Different Silicon wafer may have otherness.A kind of good solution thought has been proposed in the US patent 5438209.Method in the literary composition is applicable to " V " v notch v, by the some sampled points on the breach, calculates two straight lines of " V " v notch v, and its intersection point is the centre position of " V " v notch v.Its weak point is the calculating of straight line, has only utilized 2 points respectively, is subjected to the influence of sampling precision equally.
Above some exist following some shortcomings or limitation about methods that the Silicon Wafer center of circle and breach (side cut) detect:
1. mechanical type center of circle aligning is because contact roller bearing and Silicon Wafer EDGE CONTACT may be polluted Silicon Wafer on the one hand, and roller bearing may make Silicon Wafer be out of shape when the location on the other hand.
2. adopt a plurality of optical pickocffs, increase equipment cost.
3. the method for the center of circle and breach (side cut) detection is too simple, and precision is not high.Need repeated operation, or only utilized a few discrete special sampled point, the precision of calculating is subjected to the interference of single sampled point error very big, can not utilize whole sampled datas fully.
4. the limitation of equipment or method can not be suitable for the needs of current I C technology, as is only applicable to the detection of side cut or " V " v notch v, is not suitable for the detection of arc gap Silicon Wafer.
Summary of the invention
Main purpose of the present invention is for overcoming the weak point of prior art, proposing a kind of control method of Silicon Wafer prealignment.Can finish the center of circle of Silicon Wafer and aim at and the breach location according to the requirement of Silicon Wafer prealignment precision and time, can improve the prealignment precision greatly.
The Silicon Wafer prealignment control method that the present invention proposes comprises optical detector, is used to gather the data of the edge and the breach of Silicon Wafer; A rotary unit is used to drive Silicon Wafer and rotates; To heart actuator, be used for the center of circle of Silicon Wafer is moved on to the pivot of rotary unit; Described optical detector is single ccd sensor, makes this ccd sensor light beam linear array direction pass through pivot; This method comprises location, the Silicon Wafer center of circle, Silicon Wafer breach location two parts, it is characterized in that,
Described Silicon Wafer localization method may further comprise the steps:
11): circle sampling: rotary unit drives the Silicon Wafer rotation, and ccd sensor is gathered the marginal date in the Silicon Wafer rotary course, simultaneously the positional value in the record initial moment of sampling;
12) the invalid sampled data that exceeds the CCD measuring range is rejected in data preliminary treatment;
13) justify match: adopt the match of least square circle algorithm to try to achieve silicon wafer radius of a circle and central coordinate of circle;
14) Silicon Wafer is to the heart: according to the central coordinate of circle value of the Silicon Wafer that obtains, adopt heart actuator is moved Silicon Wafer, the center of circle of Silicon Wafer is overlapped with pivot, to finish the location in the Silicon Wafer center of circle;
Described breach localization method may further comprise the steps:
21) breach coarse positioning: according to the circle sampling data, adopt the edge rate method to detect Silicon Wafer breach scope, the point of edge rate maximum is the initial estimate at breach center, rejects the sampled point in the breach scope simultaneously;
22) breach is carefully sampled: the breach of Silicon Wafer is rotated near the scan line of ccd sensor, breach is carried out among a small circle thin sampling;
23) breach match: according to the initial estimate at breach center, adopt least square circle algorithm match breach, obtain the central coordinate of circle of breach circle, the intersection point at the breach center of circle and pivot line and Silicon Wafer edge both had been the breach center of being sought;
24) the breach center is rotated to the angle of appointment, to finish the breach location of Silicon Wafer.
Characteristics of the present invention and effect:
The present invention detects the edge and the breach of Silicon Wafer by single ccd sensor, by less rotation with move the center of circle and the breach location of realizing Silicon Wafer.
The present invention calculates the center of circle of Silicon Wafer and the center of breach by curve fit.This method is not subjected to the influence of single sampled data error, can make full use of whole sampled datas, and measure error is had stronger inhibitory action, can improve the precision that the center of circle is aimed at and breach detects greatly.
Method of the present invention is all effective to the Silicon Wafer of different size.By adjusting the distance (about Silicon Wafer radius) of ccd detector, go for the Silicon Wafer prealignment of different size to pivot.Very strong applicability is arranged.In addition, for the Silicon Wafer that contains side cut, the least square circle match of breach is modified as fitting a straight line in only breach need being detected, and can realize cutting edge and detect, and the side cut center is the intersection point that pivot arrives the side cut straight line.
Precision height:, can under equal measuring element precision conditions, improve the precision of prealignment by circle fitting algorithm and breach detection algorithm.If the precision of measuring element is σ, the computational accuracy in the Silicon Wafer center of circle can reach so
Wherein N is the sampling sum.
Be simple and easy to use: the present invention does not need to know in advance the precise radius of Silicon Wafer, to the disk location of different size the time, only need adjust CCD by holding position, can carry out the center of circle and breach location, easy for operation.
The present invention can improve the overall performance of entire I C manufacturing equipment streamline greatly, improves the rate of finished products that IC produces, and the development that IC is equipped has important meaning.
Description of drawings
The Silicon Wafer prealignment apparatus embodiments structural representation that Fig. 1 adopts for the inventive method.
Fig. 2 is the overview flow chart of the inventive method.
Fig. 3 is that the present invention is to breach coordinate transform schematic diagram before and after the heart.
Fig. 4 is breach circle match schematic diagram of the present invention.
Embodiment
Silicon Wafer prealignment control method of the present invention reaches accompanying drawing in conjunction with the embodiments and is described in detail as follows:
The Silicon Wafer prealignment apparatus embodiments structure that the inventive method adopts as shown in Figure 1, wherein, 6 is notched Silicon Wafer (adopting the Silicon Wafer of 8 inches (diameter 200mm) in the present embodiment), 2 is rotary unit, can rotate around the Z axle, have groove on the circular platform on top, be used for the vacuum suction Silicon Wafer; 5 is the wedge shape platform, by moving on directions X, and can be so that rotary unit 2 moves along the Z direction; 3 is to heart unit, and semicircle platform top also has groove; 4 is horizontal guide rail, can move on directions X along horizontal guide rail heart unit 3; 1 is ccd detector (adopting the array light source CCD LS-7010 of Keyence company in the present embodiment).The light beam of detector is a linear array light beam, width is about 7mm, the riding position of detector is apart from the distance (about 100mm) of the about Silicon Wafer radius in the center of rotary unit 2, and light beam linear array direction is by pivot, makes the edge of Silicon Wafer as far as possible within the measuring range of ccd detector.
The overall procedure that adopts above-mentioned Silicon Wafer prealignment equipment to implement the inventive method mainly comprises two parts in Silicon Wafer location and breach location, as shown in Figure 2, is described in detail as follows respectively:
The Silicon Wafer positioning flow of the inventive method may further comprise the steps:
(1) circle sampling: in prealignment equipment shown in Figure 1, the code-disc value of establishing each servomotor is zero, and makes rotary unit 2 at uppermost position, to heart unit in leftmost position.At first rotary unit is by the vacuum suction Silicon Wafer, and rotary unit drives Silicon Wafer rotation 450 degree then.Suitable sample frequency and sampling number are set, and (required precision is depended in the setting of sampling number and frequency, CCD sampling rate, the memory capacity of control unit and the time requirement of whole prealignment.Selecting sample frequency in this example was 480/ week), distribution circle circle Monday as far as possible of counting that makes sampling.It is more why to rotate Silicon Wafer one circle, it is the acceleration and deceleration problem when considering the rotation starting and ending, therefore sampled data and non-rotating firm startup the time, but in rotation 45 degree, begin sampling, stop sampling and finish preceding 45 degree, make sampled data be uniformly distributed on the circumference as far as possible in rotation.
(2) data preliminary treatment:, can not directly justify match for the data that sampling in (1) obtains.On the one hand, because the measuring range of ccd detector is limited, so will reject the data outside the CCD range, by upper limit threshold and lower threshold being set (because the greatest measurement of CCD is 7.13050 in this example, it is 7.13050 that upper limit threshold can be set, lower threshold is 0), can reject invalid sampled data; Be processing on the other hand, because the circle match can not comprise the breach data, so the breach data also will weed out to breach.Can find point on the Silicon Wafer breach by the edge rate method.The data l that elder generation measures ccd detector
iWith anglec of rotation θ
i(can find the solution by the motor code-disc value of record) is transformed into the circumference data (x under the rectangular coordinate system
i, y
i), i=1,2 ..., N, N are total sampling number, 3 adjacent sampled points are calculated angle be edge rate.Because the distribution of Silicon Wafer edge sample point is relatively more even basically, so adjacent 3 corner dimension is similar on the circumference, the angle of putting on the breach then has bigger variation.(threshold value adopts the method for experience to determine to set appropriate threshold.Circle sampling is 480 in the present embodiment, and then adjacent 3 angle is π-2 π/480, considers influence of measurement error, and threshold value can be set at π-5*2 π/480～π-10*2 π/480.Threshold setting in the present embodiment is 3.05 radians), can judge which point is the point on the breach.The point of edge rate maximum is the initial estimate at breach center, then writes down the position (because the restriction of CCD measuring range, the breach of Silicon Wafer has some or all of outside range) of this point.
(3) justify match.Adopt least square circle algorithm, calculate the central coordinate of circle (d of Silicon Wafer
x, d
y) and the radius R of Silicon Wafer.Thereby can calculate the eccentric angle and the eccentric distance d of Silicon Wafer.(wherein,
If d
y〉=0, =acos (d then
x/ d), if d
y＜0, =π+acos (d then
x/ d)) the round basic thought of least square, be to find a such expectation round, make that the point on the circumference of sampling arrives the round distance minimum of expectation.
(4) Silicon Wafer is to the heart.Silicon Wafer is that the center of circle with Silicon Wafer moves to the pivot place to the purpose of the heart, and method is as follows: since the circle match as calculated the eccentric angle and the eccentric size in the Silicon Wafer center of circle, so at first rotate Silicon Wafer, the center of circle of Silicon Wafer is rotated to X-axis forward place; Mobile then wedge shape platform 4 makes rotary unit 2 descend, and Silicon Wafer switches to above the heart unit 3 from rotary unit 2; Then heart unit is moved the distance of d along the X-axis negative sense; Last rotary unit 2 rises, and Silicon Wafer is from switching to above the rotary unit 2 heart unit 3.At this moment, the center of circle of Silicon Wafer and pivot overlap.
The flow process of the breach location of the inventive method may further comprise the steps:
(1) breach is just located: its objective is the approximate location that finds the breach center.If in the circle fit procedure, detected breach, then needed the breach coordinate is carried out conversion, as shown in Figure 3.The Silicon Wafer of filled circles representative turns to X-direction with the center of circle, and the center of circle of the Silicon Wafer of dotted line representative moves to the pivot place.α is the angle to the breach before the heart and the Silicon Wafer center of circle, and α ' is the angle to the breach after the heart and the Silicon Wafer center of circle, and l is to the measured value of breach before the heart to pivot, then has
So the angle to breach after the heart is
Wherein is the center of circle eccentric angle that calculates in the circle fit procedure.Otherwise show in the circle sampling process, not detect breach, so need carry out breach is detected.In rotation one week of Silicon Wafer, write down sampled data and code-disc value simultaneously.Sampling density does not need very high, and 1 sampled point of every degree gets final product (because the subtended angle of Silicon Wafer breach is about 2～3 degree, can guarantee like this has 2～3 sampled points on the breach).Because this moment, the center of circle of Silicon Wafer overlapped with pivot, only need to all sampled datas relatively, be the initial estimate at breach center apart from the sampled point of pivot minimum.
(2) breach is carefully sampled: the breach to Silicon Wafer is carefully sampled.Because the breach subtended angle of Silicon Wafer is about 2～3 degree, begin sampling so can shift to an earlier date 2 degree at the breach center, the present embodiment sample range is about 5 degree, makes sampled point cover whole barbed portion.Sampling density is higher as far as possible, and present embodiment is 400～500 sampled points.
(3) near breach match: the breach center of Silicon Wafer, can regard one section very little circular arc (about the general 3mm of the diameter of present embodiment) as, as shown in Figure 4.(x y) is the breach center of circle to C among the figure, and (x y) is the breach center to M, and (x y) is pivot to R.At first need to estimate the size of breach circular arc portion.If the part of breach match is too much, then the breach circle that comes out of match may be inaccurate.The size of breach circular fitting scope can method by experiment be determined.Can find the initial estimate at breach center earlier, respectively get some spots as match point then forward, backward, guarantee that the scope of match point gets final product in 1～2 degree scope of breach center.Adopt least square circle algorithm match breach circle, obtain the coordinate in the breach center of circle.The intersection point at the breach center of circle and pivot line and Silicon Wafer edge both had been the breach center of being sought.
(4) angle that at last the breach center is rotated to appointment can be finished the breach location of Silicon Wafer.
The precision position can reach 2 microns in the present embodiment, and be 10 seconds positioning time.
Claims (1)
1, a kind of Silicon Wafer prealignment control method comprises optical detector, is used to gather the data of the edge and the breach of Silicon Wafer; A rotary unit is used to drive Silicon Wafer and rotates; To heart actuator, be used for the center of circle of Silicon Wafer is moved on to the pivot of rotary unit; Described optical detector is single charge coupling device sensor, makes this charge coupling device sensor light beam linear array direction pass through pivot; This method comprises location, the Silicon Wafer center of circle, Silicon Wafer breach location two parts, it is characterized in that,
Described Silicon Wafer circle center locating method may further comprise the steps:
11) circle sampling: rotary unit drives the Silicon Wafer rotation, and charge coupling device sensor is gathered the marginal date in the Silicon Wafer rotary course, simultaneously the positional value in the record initial moment of sampling;
12) data preliminary treatment, the invalid sampled data and the breach data of rejecting excess charge coupled apparatus measuring range;
13) justify match: adopt the match of least square circle algorithm to try to achieve silicon wafer radius of a circle and central coordinate of circle;
14) Silicon Wafer is to the heart: according to the central coordinate of circle value of the Silicon Wafer that obtains, adopt heart actuator is moved Silicon Wafer, the center of circle of Silicon Wafer is overlapped with pivot, to finish the location in the Silicon Wafer center of circle;
Described Silicon Wafer breach localization method may further comprise the steps:
21) breach coarse positioning: according to the circle sampling data, adopt the edge rate method to detect Silicon Wafer breach scope, the point of edge rate maximum is the initial estimate at breach center, rejects the sampled point in the breach scope simultaneously;
22) breach is carefully sampled: the breach of Silicon Wafer is rotated near the scan line of charge coupling device sensor, breach is carried out among a small circle thin sampling;
23) breach match: according to the initial estimate at breach center, adopt least square circle algorithm match breach, obtain the central coordinate of circle of breach circle, the intersection point at the breach center of circle and pivot line and Silicon Wafer edge is the breach center of being sought;
24) the breach center is rotated to the angle of appointment, to finish the breach location of Silicon Wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101166950A CN100355055C (en) | 2005-10-28 | 2005-10-28 | Method for controlling pre-aligning of silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101166950A CN100355055C (en) | 2005-10-28 | 2005-10-28 | Method for controlling pre-aligning of silicon wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1787200A CN1787200A (en) | 2006-06-14 |
| CN100355055C true CN100355055C (en) | 2007-12-12 |
Family
ID=36784587
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005101166950A Expired - Fee Related CN100355055C (en) | 2005-10-28 | 2005-10-28 | Method for controlling pre-aligning of silicon wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100355055C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8964190B2 (en) | 2007-08-15 | 2015-02-24 | Nikon Corporation | Alignment apparatus, substrates stacking apparatus, stacked substrates manufacturing apparatus, exposure apparatus and alignment method |
| CN105632971A (en) * | 2014-11-26 | 2016-06-01 | 上海微电子装备有限公司 | Silicon wafer processing apparatus and method |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100411132C (en) * | 2006-10-13 | 2008-08-13 | 大连理工大学 | Silicon wafer prealigning device |
| CN100459095C (en) * | 2006-12-28 | 2009-02-04 | 上海交通大学 | Silicon sheet pre-positioning system based on multiple sensor data fusing |
| CN100573337C (en) * | 2007-10-11 | 2009-12-23 | 上海微电子装备有限公司 | A kind of circle center locating method |
| CN101498940B (en) * | 2008-01-31 | 2011-01-19 | 中芯国际集成电路制造(上海)有限公司 | Method and apparatus for protecting bottom electrode component in plasma etching equipment |
| CN101436004B (en) * | 2008-12-01 | 2011-12-21 | 上海微电子装备有限公司 | Method for pre-aligning silicon chip |
| CN102021624B (en) * | 2009-09-11 | 2012-10-31 | 中芯国际集成电路制造(上海)有限公司 | Alignment device |
| CN102157421B (en) * | 2010-02-11 | 2013-01-16 | 上海微电子装备有限公司 | Silicon wafer prealignment device and prealignment method |
| CN102543808A (en) * | 2010-12-29 | 2012-07-04 | 沈阳新松机器人自动化股份有限公司 | Wafer pre-alignment method |
| CN102608879A (en) * | 2011-01-24 | 2012-07-25 | 上海华虹Nec电子有限公司 | Method for aligning exposure in engineering photoetching by photoetching machine |
| CN103199047B (en) * | 2012-01-05 | 2015-08-19 | 沈阳新松机器人自动化股份有限公司 | Wafer center prealignment method |
| CN103199048A (en) * | 2012-01-05 | 2013-07-10 | 沈阳新松机器人自动化股份有限公司 | Wafer prealignment control method |
| CN103794529B (en) * | 2012-11-13 | 2016-12-21 | 北京中科信电子装备有限公司 | Determining wafer circle center offset vector on positioning table |
| CN103050427A (en) * | 2012-12-27 | 2013-04-17 | 上海交通大学 | Wafer pre-alignment method |
| CN103253002A (en) * | 2013-04-28 | 2013-08-21 | 上海功源电子科技有限公司 | Fully-automatic multifunctional wafer machine |
| CN103523491B (en) * | 2013-09-27 | 2016-09-21 | 清华大学 | Bottleneck localization method |
| CN103681427A (en) * | 2013-12-09 | 2014-03-26 | 深圳市大族激光科技股份有限公司 | Vision-based wafer rotation correction and centralized positioning method |
| CN104752297B (en) * | 2013-12-31 | 2017-12-29 | 上海微电子装备（集团）股份有限公司 | A kind of TSV silicon wafer pre-alignment devices and its method |
| SG11201605303XA (en) | 2013-12-31 | 2016-08-30 | Shanghai Microelectronics Equi | Silicon wafer pre-alignment device and method therefor |
| CN104979258B (en) * | 2014-04-14 | 2018-01-12 | 睿励科学仪器（上海）有限公司 | A kind of wafer alignment system and wafer alignment method |
| CN104979257B (en) * | 2014-04-14 | 2021-03-09 | 睿励科学仪器（上海）有限公司 | Positioning method for measuring non-pattern silicon wafer |
| CN105988305B (en) | 2015-02-28 | 2018-03-02 | 上海微电子装备（集团）股份有限公司 | Wafer pre-alignment method |
| CN108010018A (en) * | 2017-11-27 | 2018-05-08 | 浙江华睿科技有限公司 | The notch detection method and device of a kind of silicon chip |
| KR102502431B1 (en) * | 2018-11-02 | 2023-02-23 | 어플라이드 머티리얼즈 이스라엘 리미티드 | Methods, systems, and computer program products for 3D-NAND CDSEM metrology |
| CN112296997B (en) * | 2019-07-31 | 2022-01-14 | 上海微电子装备（集团）股份有限公司 | Method, device and equipment for calibrating manipulator handover station and storage medium |
| US11929277B2 (en) | 2019-09-06 | 2024-03-12 | Kabushiki Kaisha Yaskawa Denki | Wafer pre-aligner and method of pre-aligning wafer |
| CN112707130A (en) * | 2020-12-30 | 2021-04-27 | 无锡奇众电子科技有限公司 | Wafer deviation rectifying transfer table |
| CN113299585B (en) * | 2021-07-26 | 2021-11-12 | 武汉中导光电设备有限公司 | Z-Theta combined device for wafer detection |
| CN113658901B (en) * | 2021-10-21 | 2022-01-21 | 西安奕斯伟材料科技有限公司 | Method and system for positioning center of V-shaped notch of wafer and computer storage medium |
| CN115107179B (en) * | 2022-08-29 | 2022-12-09 | 江苏京创先进电子科技有限公司 | Method and system for cutting wafer positioning notch |
| CN115732380B (en) * | 2022-10-08 | 2023-11-24 | 吉姆西半导体科技（无锡）有限公司 | Wafer eccentricity adjustment method, device and storage medium |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05160245A (en) * | 1991-12-06 | 1993-06-25 | Nikon Corp | Circular board positioning apparatus |
| US5289263A (en) * | 1989-04-28 | 1994-02-22 | Dainippon Screen Mfg. Co., Ltd. | Apparatus for exposing periphery of an object |
| CN1659695A (en) * | 2002-06-06 | 2005-08-24 | 株式会社安川电机 | Wafer pre-alignment apparatus and method |
-
2005
- 2005-10-28 CN CNB2005101166950A patent/CN100355055C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5289263A (en) * | 1989-04-28 | 1994-02-22 | Dainippon Screen Mfg. Co., Ltd. | Apparatus for exposing periphery of an object |
| JPH05160245A (en) * | 1991-12-06 | 1993-06-25 | Nikon Corp | Circular board positioning apparatus |
| CN1659695A (en) * | 2002-06-06 | 2005-08-24 | 株式会社安川电机 | Wafer pre-alignment apparatus and method |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8964190B2 (en) | 2007-08-15 | 2015-02-24 | Nikon Corporation | Alignment apparatus, substrates stacking apparatus, stacked substrates manufacturing apparatus, exposure apparatus and alignment method |
| CN105632971A (en) * | 2014-11-26 | 2016-06-01 | 上海微电子装备有限公司 | Silicon wafer processing apparatus and method |
| US10658214B2 (en) | 2014-11-26 | 2020-05-19 | Shanghai Micro Electronics Equipment Co., Ltd. | Wafer processing device and method therefor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1787200A (en) | 2006-06-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100355055C (en) | Method for controlling pre-aligning of silicon wafer | |
| CN103021919B (en) | A kind of wafer prealignment device | |
| US5822213A (en) | Method and apparatus for determining the center and orientation of a wafer-like object | |
| EP3288063B1 (en) | Pre-alignment device and method for wafer | |
| US3989385A (en) | Part locating, mask alignment and mask alignment verification system | |
| KR101487301B1 (en) | Alignment system and method for a substrate in a nano-imprint process | |
| CN103050427A (en) | Wafer pre-alignment method | |
| CN101436004B (en) | Method for pre-aligning silicon chip | |
| US5644400A (en) | Method and apparatus for determining the center and orientation of a wafer-like object | |
| CN102169822B (en) | Method for doubly setting and accurately positioning centre of silicon slice | |
| EP1045430A2 (en) | Wafer aligner system | |
| CN102402127B (en) | Silicon chip prealignment device and silicon chip prealignment method | |
| CN100508158C (en) | Positioning device and positioning method for wafer sheet | |
| JPH04284647A (en) | Method and apparatus for detecting central position of wafer | |
| CN103681427A (en) | Vision-based wafer rotation correction and centralized positioning method | |
| CN103344195B (en) | A kind of swing-arm profilometry gauge head of sensor rotation is to heart calibrating installation | |
| CN110842781A (en) | Non-contact measurement method and device | |
| KR102344826B1 (en) | Method of detecting focusing point position | |
| JP2003161615A (en) | Device for measuring surface shape | |
| CN104977821B (en) | A kind of trajectory corrector focusing leveling device and method based on prescan | |
| JP7262901B2 (en) | Workpiece cutting method | |
| JPS6245039A (en) | Angle positioning device of circular sheet element | |
| JP2009253197A (en) | Method and apparatus for detecting center position, and method and apparatus for adjusting center position | |
| UCHIDA et al. | Measuring of Grinding Wheel Surface Shape by Means of Laser Probe Method | |
| JPH02292843A (en) | Wafer positioning device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20071212 Termination date: 20101028 |