CN108010018A - The notch detection method and device of a kind of silicon chip - Google Patents
The notch detection method and device of a kind of silicon chip Download PDFInfo
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- CN108010018A CN108010018A CN201711205182.6A CN201711205182A CN108010018A CN 108010018 A CN108010018 A CN 108010018A CN 201711205182 A CN201711205182 A CN 201711205182A CN 108010018 A CN108010018 A CN 108010018A
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/0002—Inspection of images, e.g. flaw detection
- G06T7/0004—Industrial image inspection
- G06T7/0008—Industrial image inspection checking presence/absence
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/60—Analysis of geometric attributes
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T2207/00—Indexing scheme for image analysis or image enhancement
- G06T2207/30—Subject of image; Context of image processing
- G06T2207/30108—Industrial image inspection
- G06T2207/30148—Semiconductor; IC; Wafer
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Abstract
The invention discloses the notch detection method and device of a kind of silicon chip, the described method includes：Silicon chip image is obtained, extracts the boundary point of the silicon chip；For each boundary point, according to the boundary point and adjacent with the boundary point two boundary points, the corresponding deflection variable quantity of the boundary point is determined；For each boundary point, judge whether the corresponding deflection variable quantity of the boundary point is more than default deflection change threshold；If so, determine that there are notch at the boundary point.Due in embodiments of the present invention, for each boundary point of silicon chip, according to the boundary point and adjacent with the boundary point two boundary points, determine the corresponding deflection variable quantity of the boundary point, and when the corresponding deflection variable quantity of the boundary point is more than default deflection change threshold, determine directly to be detected with the presence or absence of notch according to the boundary point pair silicon chip of silicon chip there are notch at the boundary point, without being fitted to border point, the precision and efficiency of the notch detection of silicon chip are improved.
Description
Technical field
The present invention relates to the notch detection method and device of technical field of image processing, more particularly to a kind of silicon chip.
Background technology
Silicon chip is a kind of basic material for manufacturing solar panel, is obtained by silicon rod slicing, generally circular.Silicon chip
Notch is the edge that silicon chip is embodied in the defects of causing in silicon chip working process due to edge unbalance stress or artificial destruction
There is damaged or missing etc..Hydraulic performance decline occurs in the solar panel manufactured there are the silicon chip of chips defect, or even can not
The problem of use, therefore, it is necessary to which the silicon chip there will be notch is rejected before solar panel is manufactured.
The notch detection method of existing silicon chip, mainly to silicon chip image into row threshold division, determines the foreign steamer of silicon chip
Exterior feature, i.e., it is different from the gray value of pixel in non-area of silicon wafer according to the gray value of pixel in area of silicon wafer in silicon chip image,
Determine the outer contour of silicon chip, the boundary point of silicon chip on outer contour is fitted；And according to default step-length, chosen on outer contour
Detection position, determines the length of a curve after the corresponding fitting of each detection position, and by the corresponding curve of each detection position
Length clustered, calculate comprising the most corresponding length of a curve average of class of length of a curve quantity, and for each
Detection position judges the corresponding length of a curve of the detection position, the poor absolute value with length of a curve average, if be more than
Given threshold, if so, determining the detection position, there are notch.
However, in the prior art, when the notch of silicon chip is detected, border point is fitted, silicon chip can be weakened
Notch feature, and since fitting algorithm itself is there are error, the curve after fitting also can be there are error, and then result in silicon chip
Notch detection precision it is not high, in addition, when the pixel resolution of silicon chip image is higher, the quantity of boundary point can also increase,
Fit procedure can take more process resource, cause the efficiency of the notch detection of silicon chip to reduce.
The content of the invention
The present invention provides a kind of notch detection method and device of silicon chip, to solve the inspection of the notch of silicon chip in the prior art
The precision of survey and it is inefficient the problem of.
The invention discloses a kind of notch detection method of silicon chip, the described method includes：
Silicon chip image is obtained, extracts the corresponding each boundary point of area of silicon wafer in the silicon chip image；
For each boundary point, according to the boundary point and adjacent with the boundary point two boundary points, the boundary point is determined
Corresponding deflection variable quantity；
For each boundary point, judge whether the corresponding deflection variable quantity of the boundary point is more than default deflection and changes
Threshold value；If so, determining silicon chip, there are notch with the boundary point corresponding position.
Further, it is described according to the boundary point and adjacent with the boundary point two boundary points, determine the boundary point pair
The deflection variable quantity answered includes：
The boundary point two boundary points adjacent with the boundary point are connected respectively, determine that the boundary point is corresponding first straight
Line and second straight line；
According to the angle of the first straight line and the second straight line, the corresponding deflection variable quantity of the boundary point is determined.
Further, the angle according to the first straight line and the second straight line, determines that the boundary point is corresponding
Deflection variable quantity includes：
Identify the number of degrees for the default angle that the first straight line and the second straight line are formed, judge the default angle
Whether the number of degrees are less than 90 degree；
If so, using the default angle as the corresponding deflection variable quantity of the boundary point；
If not, using the supplementary angle of the default angle as the corresponding deflection variable quantity of the boundary point.
Further, after the acquisition silicon chip image, before the boundary point for extracting the silicon chip, the method is also wrapped
Include：
The area of silicon wafer in the silicon chip image is positioned, mask process is carried out to the area of silicon wafer.
Further, the method further includes：
Binary conversion treatment is carried out to the silicon chip image.
The invention discloses a kind of notch detection device of silicon chip, described device includes：
Acquisition module, for obtaining silicon chip image, extracts the corresponding each boundary point of area of silicon wafer in the silicon chip image；
Determining module, for for each boundary point, according to the boundary point and adjacent with the boundary point two boundary points,
Determine the corresponding deflection variable quantity of the boundary point；
Judgment module, for for each boundary point, it is pre- to judge whether the corresponding deflection variable quantity of the boundary point is more than
If deflection change threshold；If so, determining silicon chip, there are notch with the boundary point corresponding position.
Further, the determining module, specifically for the boundary point two boundary points adjacent with the boundary point are divided
Do not connect, determine the corresponding first straight line of the boundary point and second straight line；According to the first straight line and the second straight line
Angle, determines the corresponding deflection variable quantity of the boundary point.
Further, the determining module, is formed pre- specifically for the identification first straight line and the second straight line
If the number of degrees of angle, judge whether the number of degrees of the default angle are less than 90 degree；If so, using the default angle as the side
The corresponding deflection variable quantity of boundary's point；If not, become the supplementary angle of the default angle as the corresponding deflection of the boundary point
Change amount.
Further, described device further includes：
Processing module, for positioning the area of silicon wafer in the silicon chip image, mask process is carried out to the area of silicon wafer.
Further, the processing module, is additionally operable to carry out binary conversion treatment to the silicon chip image.
The invention discloses the notch detection method and device of a kind of silicon chip, the described method includes：Silicon chip image is obtained, is carried
Take the corresponding each boundary point of area of silicon wafer in the silicon chip image；For each boundary point, according to the boundary point and with the side
Two adjacent boundary points of boundary's point, determine the corresponding deflection variable quantity of the boundary point；For each boundary point, the border is judged
Whether the corresponding deflection variable quantity of point is more than default deflection change threshold；If so, determine silicon chip and the boundary point pair
Should there are notch at place.Due in embodiments of the present invention, for each boundary point of silicon chip, according to the boundary point and with the border
Two adjacent boundary points of point, determine the corresponding deflection variable quantity of the boundary point, and when the corresponding deflection of the boundary point becomes
When change amount is more than default deflection change threshold, silicon chip and the boundary point corresponding position are determined there are notch, directly according to silicon chip
Boundary point pair silicon chip be detected with the presence or absence of notch, without being fitted to border point, improve the notch detection of silicon chip
Precision and efficiency.
Brief description of the drawings
Fig. 1 is a kind of notch detection process schematic for silicon chip that the embodiment of the present invention 1 provides；
Fig. 2 is the angle schematic diagram that a kind of boundary point that the embodiment of the present invention 1 provides is formed；
Fig. 3 is a kind of notch detection process schematic for silicon chip that the embodiment of the present invention 3 provides；
Fig. 4 is a kind of notch detection apparatus structure schematic diagram for silicon chip that the embodiment of the present invention 4 provides.
Embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other without creative efforts
Embodiment, belongs to the scope of protection of the invention.
Embodiment 1：
Fig. 1 is a kind of notch detection process schematic of silicon chip provided in an embodiment of the present invention, which includes：
S101：Silicon chip image is obtained, extracts the corresponding each boundary point of area of silicon wafer in the silicon chip image.
The notch detection method of silicon chip provided in an embodiment of the present invention, applied to electronic equipment, which can be
The equipment such as tablet computer, personal computer (PC), server.
Due to the presence of silicon chip surface texture, the gray value of pixel can be less than non-silicon chip in area of silicon wafer in silicon chip image
The gray value of pixel in region.In embodiments of the present invention, can be according in silicon chip image, two pixels of arbitrary neighborhood
Whether the difference of corresponding gray value is more than default gray threshold, extracts the boundary point of silicon chip.
Specifically, electronic equipment obtains the silicon chip image of image capture device collection, each pixel in silicon chip image is identified
The gray value of point, and is directed to each pixel, recognize whether it is adjacent with the pixel, and with the gray value of the pixel
Difference be more than default gray threshold pixel, if so, determine the pixel be silicon chip boundary point.Such as：Pixel
Gray value 50, the default gray threshold of point C is 70, and the pixel adjacent with pixel C has pixel A, pixel B, pixel
Point D, pixel E, the gray value of wherein pixel A is 49, the gray value of pixel B is 51, the gray value of pixel D is 229,
The gray value of pixel E is 50, and the difference there are the gray value and the gray value of pixel C of pixel D is more than default gray scale
Threshold value, determines the boundary point that pixel C is silicon chip.
Of course or be directed to each first pixel, identification each second picture adjacent with first pixel
Vegetarian refreshments, judges whether the difference of the gray value of the first pixel and the gray value of any one the second pixel is more than default ash
Threshold value is spent, if so, determining the boundary point that first pixel is silicon chip.In embodiments of the present invention, extract in silicon chip image
The corresponding each boundary point of area of silicon wafer is the prior art, is no longer repeated.
S102：For each boundary point, according to the boundary point and adjacent with the boundary point two boundary points, the side is determined
The corresponding deflection variable quantity of boundary's point.
In embodiments of the present invention, for each boundary point, the boundary point two boundary points adjacent with the boundary point can
To form a triangle, in the triangle, the number of degrees at the corresponding exterior angle of the boundary point are the corresponding direction of the boundary point
Angle variable quantity.Because the corresponding exterior angle of boundary point interior angle corresponding with the boundary point is complementary, in order to simplify calculation process, inspection is improved
Efficiency is surveyed, in embodiments of the present invention, for each boundary point, it may be determined that the boundary point respectively adjacent with the boundary point two
A boundary point line forms the number of degrees of angle, and the number of degrees at the supplementary angle according to the angle, determines the corresponding deflection of the boundary point
Variable quantity.
As shown in Fig. 2, the distance between boundary point A and boundary point B are c, the distance between boundary point A and boundary point C are
B, the distance between boundary point B and boundary point C are a, and the number of degrees for determining ∠ ABC are arccos (a2+c2-b2)/(2ac).Boundary point
The corresponding deflection variable quantities of B are the number of degrees at ∠ ABC supplementary angles, i.e. 180 degree and the difference of ∠ ABC.
In embodiments of the present invention, identify coordinate of the boundary point in silicon chip image, determine any both sides in silicon chip image
The distance between boundary's point is the prior art, without repeating.
S103：For each boundary point, judge whether the corresponding deflection variable quantity of the boundary point is more than default direction
Angle change threshold；If so, determining silicon chip, there are notch with the boundary point corresponding position.
Because silicon chip is circular, when notch is not present in silicon chip, silicon chip boundary point line is a smooth curve, silicon chip
The corresponding deflection variable quantity of Arbitrary Boundaries point is in default deflection change threshold, corresponding when silicon chip is there are during notch
The silicon chip boundary point line of indentation, there is no longer smooth, and the corresponding deflection variable quantity of boundary point of corresponding indentation, there can increase, and surpass
Cross default deflection change threshold.In embodiments of the present invention, can according to the corresponding deflection variable quantity of boundary point whether
More than default deflection change threshold, judge that silicon chip whether there is notch.
Specifically, being directed to each boundary point, judge whether the corresponding deflection variable quantity of the boundary point is more than default side
To angle change threshold, if so, silicon chip and the boundary point corresponding position are determined there are notch, wherein default deflection change threshold
It can be 3 degree, 5 degree etc..
Due in embodiments of the present invention, for each boundary point of silicon chip, according to the boundary point and with the boundary point phase
Two adjacent boundary points, determine the corresponding deflection variable quantity of the boundary point, and work as the corresponding deflection variable quantity of the boundary point
During more than default deflection change threshold, silicon chip and the boundary point corresponding position are determined there are notch, directly according to the side of silicon chip
Boundary's point is detected silicon chip with the presence or absence of notch, without being fitted to border point, improves the essence of the notch detection of silicon chip
Degree and efficiency.
Embodiment 2：
On the basis of the various embodiments described above, in embodiments of the present invention, in order to improve the notch detection efficiency of silicon chip, institute
State according to the boundary point and adjacent with the boundary point two boundary points, determine the corresponding deflection variable quantity bag of the boundary point
Include：
The boundary point two boundary points adjacent with the boundary point are connected respectively, determine that the boundary point is corresponding first straight
Line and second straight line；
According to the angle of the first straight line and the second straight line, the corresponding deflection variable quantity of the boundary point is determined.
The angle according to the first straight line and the second straight line, determines the corresponding deflection change of the boundary point
Amount includes：
Identify the number of degrees for the default angle that the first straight line and the second straight line are formed, judge the default angle
Whether the number of degrees are less than 90 degree；
If so, using the default angle as the corresponding deflection variable quantity of the boundary point；
If not, using the supplementary angle of the default angle as the corresponding deflection variable quantity of the boundary point.
Because silicon chip is circular, when notch is not present in silicon chip, it is a smooth curve that silicon chip boundary point line, which is, silicon chip
The corresponding deflection variable quantity of Arbitrary Boundaries point be respectively less than 90 degree；When in silicon chip working process due to edge unbalance stress or people
When causing the silicon chip notch occur to destroy, indentation, there also can there are certain radian, the corresponding deflection of boundary point of indentation, there
Variable quantity is not more than 90 degree, therefore in embodiments of the present invention, deflection variable quantity is not more than 90 degree, and for each
Boundary point, the boundary point two boundary points adjacent with the boundary point connect respectively, and definite two straight line out of plumb intersect.
In addition, because when two straight lines are non-perpendicular intersecting, the different angle of two angles existing for two straight lines is complementary,
Therefore, can be by the boundary point two borders adjacent with the boundary point in the corresponding deflection variable quantity of definite boundary point
Point connects respectively, determines the corresponding first straight line of the boundary point and second straight line, and identify first straight line and second straight line respectively
The number of degrees of each angle formed, the number of degrees for the angle less than 90 degree that first straight line and second straight line are formed, as the side
The corresponding deflection variable quantity of boundary's point.
Of course, can also be using any one angle that first straight line and second straight line are formed as default angle, identification
The number of degrees of the default angle, judge whether the number of degrees of the default angle are less than 90 degree, if so, the number of degrees that this is preset to angle are made
For the corresponding deflection variable quantity of the boundary point；If not, should using the number of degrees at the supplementary angle for presetting angle as the boundary point pair
Deflection variable quantity.In embodiments of the present invention, the number of degrees for identifying two included angle of straight line are the prior arts, are no longer repeated.
Embodiment 3：
In order to improve the precision of the notch detection of silicon chip, on the basis of the various embodiments described above, in embodiments of the present invention,
After the acquisition silicon chip image, before the boundary point for extracting the silicon chip, the method further includes：
The area of silicon wafer in the silicon chip image is positioned, mask process is carried out to the area of silicon wafer.
Specifically, after obtaining silicon chip image, electronic equipment calls slide calliper rule to look for sired results to have, according to area of silicon wafer in silicon chip image
In pixel gray value be less than non-area of silicon wafer in pixel gray value feature, orient the silicon in silicon chip image
Panel region, and mask process is carried out to each pixel of the gray value in area of silicon wafer less than setting gray threshold, i.e., by silicon chip
Gray value is changed to 255 less than the corresponding gray value of each pixel of setting gray threshold in region, wherein calling slide calliper rule to look for
Sired results has, and identifies that the area of silicon wafer in silicon chip image is the prior art, is no longer repeated.
In order to further improve the precision of the notch detection of silicon chip, after mask process is carried out to area of silicon wafer, by described in
Silicon chip image carries out binary conversion treatment.
Specifically, the gray value for the pixel that gray value in silicon chip image is 255 is determined as 1, will be grey in silicon chip image
Angle value is that the gray value of non-255 pixel is determined as 0, in the corresponding boundary point of extraction area of silicon wafer, it may be determined that with ash
The pixel that angle value is 0 is adjacent, and the pixel that gray value is 1 is the corresponding boundary point of area of silicon wafer；Of course, can also be true
Fixed adjacent with gray value is 1 pixel, the pixel that gray value is 0 is the corresponding boundary point of area of silicon wafer.
Fig. 3 is a kind of notch detection process schematic of silicon chip provided in an embodiment of the present invention, which includes：
S301：Silicon chip image is obtained, positions the area of silicon wafer in silicon chip image, mask process is carried out to area of silicon wafer.
S302：Binary conversion treatment is carried out to silicon chip image, extracts the corresponding each boundary point of area of silicon wafer in silicon chip image.
S303：For each boundary point, according to the boundary point and adjacent with the boundary point two boundary points, the side is determined
The corresponding deflection variable quantity of boundary's point.
S304：For each boundary point, judge whether the corresponding deflection variable quantity of the boundary point is more than default direction
Angle change threshold；If so, determining silicon chip, there are notch with the boundary point corresponding position.
Embodiment 4：
Fig. 4 is a kind of notch detection apparatus structure schematic diagram of silicon chip provided in an embodiment of the present invention, which includes：
Acquisition module 41, for obtaining silicon chip image, extracts the corresponding each border of area of silicon wafer in the silicon chip image
Point；
Determining module 42, for for each boundary point, according to the boundary point and adjacent with the boundary point two borders
Point, determines the corresponding deflection variable quantity of the boundary point；
Judgment module 43, for for each boundary point, judging whether the corresponding deflection variable quantity of the boundary point is more than
Default deflection change threshold；If so, determining silicon chip, there are notch with the boundary point corresponding position.
The determining module 42, specifically for the boundary point two boundary points adjacent with the boundary point are connected respectively,
Determine the corresponding first straight line of the boundary point and second straight line；According to the angle of the first straight line and the second straight line, really
The corresponding deflection variable quantity of the fixed boundary point.
The determining module 42, the default angle formed specifically for identifying the first straight line and the second straight line
The number of degrees, judge whether the number of degrees of the default angle are less than 90 degree；If so, should using the default angle as the boundary point pair
Deflection variable quantity；If not, using the supplementary angle of the default angle as the corresponding deflection variable quantity of the boundary point.
Described device further includes：
Processing module 44, for positioning the area of silicon wafer in the silicon chip image, to the area of silicon wafer at line mask
Reason.
The processing module 44, is additionally operable to carry out binary conversion treatment to the silicon chip image.
The invention discloses the notch detection method and device of a kind of silicon chip, the described method includes：Silicon chip image is obtained, is carried
Take the corresponding each boundary point of area of silicon wafer in the silicon chip image；For each boundary point, according to the boundary point and with the side
Two adjacent boundary points of boundary's point, determine the corresponding deflection variable quantity of the boundary point；For each boundary point, the border is judged
Whether the corresponding deflection variable quantity of point is more than default deflection change threshold；If so, determine silicon chip and the boundary point pair
Should there are notch at place.Due in embodiments of the present invention, for each boundary point of silicon chip, according to the boundary point and with the border
Two adjacent boundary points of point, determine the corresponding deflection variable quantity of the boundary point, and when the corresponding deflection of the boundary point becomes
When change amount is more than default deflection change threshold, silicon chip and the boundary point corresponding position are determined there are notch, directly according to silicon chip
Boundary point pair silicon chip be detected with the presence or absence of notch, without being fitted to border point, improve the notch detection of silicon chip
Precision and efficiency.
For systems/devices embodiment, since it is substantially similar to embodiment of the method, so the comparison of description is simple
Single, the relevent part can refer to the partial explaination of embodiments of method.
It should be understood by those skilled in the art that, embodiments herein can be provided as method, system or computer program
Product.Therefore, the application can use the reality in terms of complete hardware embodiment, complete software embodiment or combination software and hardware
Apply the form of example.Moreover, the application can use the computer for wherein including computer usable program code in one or more
The computer program production that usable storage medium is implemented on (including but not limited to magnetic disk storage, CD-ROM, optical memory etc.)
The form of product.
The application is with reference to the flow according to the method for the embodiment of the present application, equipment (system) and computer program product
Figure and/or block diagram describe.It should be understood that it can be realized by computer program instructions every first-class in flowchart and/or the block diagram
The combination of flow and/or square frame in journey and/or square frame and flowchart and/or the block diagram.These computer programs can be provided
The processors of all-purpose computer, special purpose computer, Embedded Processor or other programmable data processing devices is instructed to produce
A raw machine so that the instruction performed by computer or the processor of other programmable data processing devices, which produces, to be used in fact
The device for the function of being specified in present one flow of flow chart or one square frame of multiple flows and/or block diagram or multiple square frames.
These computer program instructions, which may also be stored in, can guide computer or other programmable data processing devices with spy
Determine in the computer-readable memory that mode works so that the instruction being stored in the computer-readable memory, which produces, to be included referring to
Make the manufacture of device, the command device realize in one flow of flow chart or multiple flows and/or one square frame of block diagram or
The function of being specified in multiple square frames.
These computer program instructions can be also loaded into computer or other programmable data processing devices so that counted
Series of operation steps is performed on calculation machine or other programmable devices to produce computer implemented processing, thus in computer or
The instruction performed on other programmable devices is provided and is used for realization in one flow of flow chart or multiple flows and/or block diagram one
The step of function of being specified in a square frame or multiple square frames.
Although having been described for the preferred embodiment of the application, those skilled in the art once know basic creation
Property concept, then can make these embodiments other change and modification.So appended claims be intended to be construed to include it is excellent
Select embodiment and fall into all change and modification of the application scope.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
God and scope.In this way, if these modifications and changes of the present invention belongs to the scope of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to comprising including these modification and variations.
Claims (10)
- A kind of 1. notch detection method of silicon chip, it is characterised in that the described method includes：Silicon chip image is obtained, extracts the corresponding each boundary point of area of silicon wafer in the silicon chip image；For each boundary point, according to the boundary point and adjacent with the boundary point two boundary points, determine that the boundary point pair should Deflection variable quantity；For each boundary point, judge whether the corresponding deflection variable quantity of the boundary point is more than default deflection change threshold Value；If so, determining silicon chip, there are notch with the boundary point corresponding position.
- 2. the method as described in claim 1, it is characterised in that described according to the boundary point and adjacent with the boundary point two Boundary point, determines that the corresponding deflection variable quantity of the boundary point includes：The boundary point two boundary points adjacent with the boundary point are connected respectively, determine the corresponding first straight line of the boundary point and Second straight line；According to the angle of the first straight line and the second straight line, the corresponding deflection variable quantity of the boundary point is determined.
- 3. method as claimed in claim 2, it is characterised in that the folder according to the first straight line and the second straight line Angle, determines that the corresponding deflection variable quantity of the boundary point includes：Identify the number of degrees for the default angle that the first straight line and the second straight line are formed, judge the number of degrees of the default angle Whether 90 degree are less than；If so, using the default angle as the corresponding deflection variable quantity of the boundary point；If not, using the supplementary angle of the default angle as the corresponding deflection variable quantity of the boundary point.
- 4. the method as described in claim 1, it is characterised in that after the acquisition silicon chip image, extract the side of the silicon chip Before boundary's point, the method further includes：The area of silicon wafer in the silicon chip image is positioned, mask process is carried out to the area of silicon wafer.
- 5. method as claimed in claim 4, it is characterised in that the method further includes：Binary conversion treatment is carried out to the silicon chip image.
- 6. the notch detection device of a kind of silicon chip, it is characterised in that described device includes：Acquisition module, for obtaining silicon chip image, extracts the corresponding each boundary point of area of silicon wafer in the silicon chip image；Determining module, for for each boundary point, according to the boundary point and adjacent with the boundary point two boundary points, determining The corresponding deflection variable quantity of the boundary point；Judgment module, for for each boundary point, it is default to judge whether the corresponding deflection variable quantity of the boundary point is more than Deflection change threshold；If so, determining silicon chip, there are notch with the boundary point corresponding position.
- 7. device as claimed in claim 6, it is characterised in that the determining module, specifically for by the boundary point and the side Two adjacent boundary points of boundary's point connect respectively, determine the corresponding first straight line of the boundary point and second straight line；According to described The angle of one straight line and the second straight line, determines the corresponding deflection variable quantity of the boundary point.
- 8. device as claimed in claim 7, it is characterised in that the determining module, specifically for identifying the first straight line The number of degrees of the default angle formed with the second straight line, judge whether the number of degrees of the default angle are less than 90 degree；If so, Using the default angle as the corresponding deflection variable quantity of the boundary point；If not, using the supplementary angle of the default angle as The corresponding deflection variable quantity of the boundary point.
- 9. device as claimed in claim 6, it is characterised in that described device further includes：Processing module, for positioning the area of silicon wafer in the silicon chip image, mask process is carried out to the area of silicon wafer.
- 10. device as claimed in claim 9, it is characterised in that the processing module, is additionally operable to carry out the silicon chip image Binary conversion treatment.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115359449A (en) * | 2022-10-18 | 2022-11-18 | 济南铁路天龙高新技术开发有限公司 | Automatic identification method and system for turnout notch image of point switch |
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