CN115732380B - Wafer eccentricity adjustment method, device and storage medium - Google Patents

Wafer eccentricity adjustment method, device and storage medium Download PDF

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Publication number
CN115732380B
CN115732380B CN202211222695.9A CN202211222695A CN115732380B CN 115732380 B CN115732380 B CN 115732380B CN 202211222695 A CN202211222695 A CN 202211222695A CN 115732380 B CN115732380 B CN 115732380B
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wafer
data
fitting
angle
positioning groove
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CN115732380A (en
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周瑜
王利
程泽西
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Jimsi Semiconductor Technology (Wuxi) Co.,Ltd.
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Gmc Semitech Co ltd
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Abstract

The application relates to a wafer eccentric adjustment method, which comprises the following steps: s1, sampling, and collecting edge position data of a wafer; s2, fitting, namely fitting out the figure data of the outer edge of the wafer at the current position and the circle center coordinates; s3, confirming the center point of the wafer positioning groove, calculating subdivision deviation values, and sequentially comparing to obtain the maximum value of the deviation values, wherein the maximum value of the deviation values is the center position of the positioning groove, and the corresponding angle is the center included angle theta; s4, performing secondary fitting: removing nearby data of the positioning groove, and re-fitting the data to obtain rounded edge graphic data, wherein the coordinates of the circle center data corresponding to the re-fitting are; s5, exposure compensation: calculating the X-axis compensation distance corresponding to the rotation I angle from the angle position of the center point of the positioning groove; s6, synchronous exposure: and synchronously controlling the angle of the rotating shaft and the X-axis compensation distance to finish exposure. The method carries out eccentric adjustment of the wafer through one linear module, so that the structure is compact, the control error is reduced, and the control precision is improved.

Description

Wafer eccentricity adjustment method, device and storage medium
Technical Field
The present application relates to a method for adjusting a position during wafer inspection, and more particularly, to a method and apparatus for adjusting wafer eccentricity, and a storage medium.
Background
When the edge of the wafer is exposed, the wafer is placed on the sucker through the manipulator and is adsorbed on the sucker, and at the moment, the circle center of the wafer is not necessarily coincident with the circle center of the sucker due to accumulated errors, so that the edge of the wafer needs to be moved when the wafer is exposed, the exposure distance of the edge of the wafer is consistent, and the edge of the wafer forms annular exposure. In the prior art, the sucker is arranged on the cross-shaped linear module, and moves along the X axis and the Y axis, so that the exposure position can be kept unchanged at the edge of the wafer when the wafer rotates. However, this method results in a complex structure, a large volume of equipment, and a large error in control, which reduces accuracy.
Disclosure of Invention
In order to solve the problems, the application provides a wafer eccentric adjustment method which can accurately control the moving position of a sucker, has high precision, has only one linear module and has a compact structure, and the specific technical scheme is as follows:
a wafer eccentric adjustment method comprises the following steps:
s1, sampling: placing the wafer on a sucker to rotate for one circle, and collecting edge position data of the wafer through a linear CCD;
s2, fitting: converting the edge position data and the real-time angle data into rectangular coordinate system position data through a polar coordinate conversion algorithm, and fitting wafer edge coordinate data and circle center coordinate data corresponding to each angle;
s3, confirming the center point of the wafer positioning groove: calculating subdivision deviation amount:
Δd=∣(Xi-a) 2 +(Yi-b) 2 -R 2 ∣,
xi and Yi are fit wafer edge coordinate data;
r is the radius of the wafer;
a. b is fitted circle center coordinate data;
sequentially comparing to obtain the maximum value of the subdivision deviation amount, and measuring the center point position of the position positioning groove of the corresponding edge when the subdivision deviation amount is the maximum value;
s4, performing secondary fitting: removing data near the center point of the positioning groove, and re-fitting to obtain whole-circle edge graph data and the radius r of the circular rotation track of the wafer center;
s5, calculating a compensation distance: the X-axis compensation distance corresponding to the rotation angle I is calculated from the angle position of the center point of the positioning groove:
wherein R is the radius of the wafer, and R is the radius of the circular rotation track of the wafer center;
s6, synchronous exposure: and synchronously controlling the rotation angle and the X-axis compensation distance to complete exposure.
An apparatus for a wafer eccentricity adjustment method, the apparatus comprising: a processor, a memory, and a program; the program is stored in the memory, and the processor calls the program stored in the memory to execute the steps of a wafer eccentricity adjustment method.
A computer-readable storage medium configured to store a program configured to perform the steps of one of the wafer bias adjustment methods described above.
Compared with the prior art, the application has the following beneficial effects:
the wafer eccentric adjustment method provided by the application carries out eccentric adjustment on the wafer through the linear module, so that the structure is compact, the control error is reduced, and the control precision is improved.
Drawings
FIG. 1 is a flow chart of a wafer eccentricity adjustment method;
fig. 2 is a schematic diagram of the structure of the exposure apparatus.
Detailed Description
The application will now be further described with reference to the accompanying drawings.
As shown in fig. 1, a wafer eccentricity adjustment method includes the following steps:
s1, sampling, namely placing a wafer on a sucker to rotate for one circle, and collecting edge position data of the wafer through a linear CCD; the wafer is sucked by the sucker, the wafer is moved to a set position by the linear module, then the sucker rotates under the action of the motor, the linear CCD collects data of the edge of the wafer, and meanwhile, the linear CCD corresponds the edge data to the angle of the sucker relative to the linear module according to the positioning notch of the wafer;
s2, fitting, namely converting the edge position data and the real-time angle data into rectangular coordinate system position data through a polar coordinate conversion algorithm, and fitting the wafer edge coordinate data and the circle center coordinate data corresponding to each angle;
s3, confirming the center point of the wafer positioning groove, and calculating subdivision deviation amount:
Δd=∣(Xi-a) 2 +(Yi-b) 2 -R 2 ∣,
wherein Xi and Yi are fit wafer edge coordinate data;
r is the radius of the wafer;
a. b is fitted circle center coordinate data;
sequentially comparing to obtain the maximum value of the subdivision deviation amount, and measuring the center point position of the position positioning groove of the corresponding edge when the subdivision deviation amount is the maximum value;
s4, performing secondary fitting: removing data near the center point of the positioning groove, and re-fitting to obtain whole-circle edge graph data and the radius of the circular rotation track of the wafer center;
s5, calculating a compensation distance: the X-axis compensation distance corresponding to the rotation angle I is calculated from the angle position of the center point of the positioning groove:
wherein R is the radius of the wafer, and R is the radius of the circular rotation track of the wafer center;
s6, synchronous exposure: and synchronously controlling the angle of the rotating shaft and the X-axis compensation distance to finish exposure.
The angle in step S2 refers to the real-time angle of the rotation axis of the chuck, that is, the angle at which the rotation axis and the X axis are synchronously compensated.
As shown in fig. 2, in the exposure apparatus, a suction cup 1 is mounted on a linear module 2 by a rotary motor, and a linear CCD3 is positioned at one side of the linear module 2 and forms an angle with the linear module. The ultraviolet exposure device 4 is positioned at one end of the linear module 2 and is on the same axis with the sucker 1, the axis of the linear module 2 and the axis of the ultraviolet exposure device 4 are all in the same plane, the axis of the sucker 1 is parallel to the axis of the ultraviolet exposure device 4, and the axes of the sucker 1 and the axis of the ultraviolet exposure device are perpendicular to the axis of the linear module 2.
During operation, the wafer is placed on the sucking disc, the sucking disc attracts the silicon chip, then the linear module drives the wafer to move to the detection origin, the edge of the wafer is inserted on the linear CCD, the sucking disc rotates a circle under the action of the motor, the linear CCD collects the edge data of the wafer, meanwhile, the system records the rotation angle of the sucking disc, then the edge data of the wafer and the rotation angle of the sucking disc are in one-to-one correspondence according to the notch of the wafer, the eccentricity of the wafer is calculated according to the obtained data, and then the linear module is adjusted according to the eccentricity corresponding to the angle of the sucking disc, so that when the wafer rotates, the distance between the center of the wafer and the exposer is kept consistent, and finally the axis of the obtained exposure ring coincides with the wafer coaxial line.
An apparatus for a wafer eccentricity adjustment method, the apparatus comprising: a processor, a memory, and a program; the program is stored in the memory, and the processor calls the program stored in the memory to execute the steps of a wafer eccentricity adjustment method.
The memory and the processor are electrically connected directly or indirectly to each other for data transmission or interaction. For example, the elements may be electrically connected to each other via one or more communication buses or signal lines, such as through a bus connection. The memory stores computer-executable instructions for implementing the data access control method, including at least one software functional module that may be stored in the memory in the form of software or firmware, and the processor executes the software programs and modules stored in the memory to perform various functional applications and data processing.
The Memory may be, but is not limited to, random access Memory (RandomAccess Memory; RAM), read Only Memory (ROM), programmable Read Only Memory (Programmable Read-Only Memory; PROM), erasable Read Only Memory (Erasable Programmable Read-Only Memory; EPROM), electrically erasable Read Only Memory (Electric Erasable Programmable Read-Only Memory; EEPROM), etc. The memory is used for storing a program, and the processor executes the program after receiving the execution instruction.
The processor may be an integrated circuit chip with signal processing capabilities. The processor may be a general-purpose processor, including a central processing unit (Central Processing Unit, abbreviated as CPU), a network processor (Network Processor, abbreviated as NP), and the like. The disclosed methods, steps, and logic blocks in the embodiments of the present application may be implemented or performed. A general purpose processor may be a microprocessor or the processor may be any conventional processor or the like.
A computer readable storage medium configured to store a program configured to perform the steps of a wafer bias adjustment method.
Embodiments of the present application are described with reference to flowchart illustrations of methods, terminal devices (systems), and computer program products according to embodiments of the application. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing terminal to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing terminal, create means for implementing the functions specified in the flowchart and/or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart.
These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart.
The technical principle of the present application is described above in connection with the specific embodiments. The description is made for the purpose of illustrating the general principles of the application and should not be taken in any way as limiting the scope of the application. Other embodiments of the application will occur to those skilled in the art from consideration of the specification and practice of the application without the need for inventive faculty, and are within the scope of the claims.

Claims (3)

1. The wafer eccentricity adjusting method is characterized by comprising the following steps of:
s1, sampling: placing the wafer on a sucker to rotate for one circle, and collecting edge position data of the wafer through a linear CCD;
s2, fitting: converting the edge position data and the real-time angle data into rectangular coordinate system position data through a polar coordinate conversion algorithm, and fitting wafer edge coordinate data and circle center coordinate data corresponding to each angle;
s3, confirming the center point of the wafer positioning groove: calculating subdivision deviation amount:
Δd=∣(Xi-a) 2 +(Yi-b) 2 -R 2 ∣,
xi and Yi are fit wafer edge coordinate data;
r is the radius of the wafer;
a. b is fitted circle center coordinate data;
sequentially comparing to obtain the maximum value of the subdivision deviation amount, wherein the position of the corresponding edge when the subdivision deviation amount is measured to be the center point position of the positioning groove;
s4, performing secondary fitting: removing data near the center point of the positioning groove, and re-fitting to obtain whole-circle edge graph data and the radius r of the circular rotation track of the wafer center;
s5, calculating a compensation distance: the X-axis compensation distance corresponding to the rotation angle I is calculated from the angle position of the center point of the positioning groove:
wherein R is the radius of the wafer, and R is the radius of the circular rotation track of the wafer center;
s6, synchronous exposure: and synchronously controlling the rotation angle and the X-axis compensation distance to complete exposure.
2. An apparatus for a wafer eccentricity adjustment method, the apparatus comprising:
a processor, a memory, and a program;
the program is stored in the memory, and the processor calls the program stored in the memory to execute the steps of a wafer eccentricity adjustment method according to claim 1.
3. A computer-readable storage medium, characterized in that the computer-readable storage medium is configured to store a program configured to perform the steps of one wafer eccentricity adjustment method of claim 1.
CN202211222695.9A 2022-10-08 2022-10-08 Wafer eccentricity adjustment method, device and storage medium Active CN115732380B (en)

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CN116872218B (en) * 2023-09-05 2023-11-24 泓浒(苏州)半导体科技有限公司 Eccentric correction method and system in semiconductor wafer conveying process

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Address after: No. 1 Jingxiang Road, Xibei Town, Xishan District, Wuxi City, Jiangsu Province, 214000

Patentee after: Jimsi Semiconductor Technology (Wuxi) Co.,Ltd.

Address before: No. 45 and 51, Yougu Industrial Park, Xibei Town, Xishan District, Wuxi City, Jiangsu Province, 214000

Patentee before: GMC SEMITECH Co.,Ltd.

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