CN114578655A - Edge exposure device and method and photoetching equipment - Google Patents
Edge exposure device and method and photoetching equipment Download PDFInfo
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- 229910052710 silicon Inorganic materials 0.000 claims abstract description 220
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
- G03F7/70725—Stages control
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The embodiment of the invention discloses an edge exposure device, an edge exposure method and photoetching equipment. The device comprises a pre-alignment module, an edge exposure module, a motion module, a control module and a fixing module; the motion module comprises an X-direction motion mechanism, a Y-direction motion mechanism, a Z-direction lifting mechanism and a rotary table, and the rotary table is used for bearing the silicon wafer; the fixed module comprises a joint table, the joint table is used for bearing the silicon wafer after the pre-alignment module acquires the position error of the silicon wafer, and the control module is used for controlling the movement module to adjust the position of the rotating table according to the position error so as to realize the pre-alignment of the silicon wafer; the control module is also used for controlling the motion module to acquire the silicon wafer from the transfer platform after pre-alignment and moving the silicon wafer to the position of the edge exposure module for edge exposure. The technical scheme of the embodiment of the invention can realize the functions of pre-alignment and edge exposure of the silicon wafer simultaneously, can reduce control objects, and has the advantages of simple and compact structure, low cost, easy module integration debugging and the like.
Description
Technical Field
The embodiments of the present invention relate to integrated circuit manufacturing technologies, and in particular, to an edge exposure apparatus and method, and a lithographic apparatus.
Background
Electroplating is one of the most important processes for packaging IC circuits, and is characterized by that it utilizes the edge of silicon wafer as anode and electroplating window in the middle of the silicon wafer as cathode, then a certain direct-current working voltage is applied between anode and cathode, and the height of metal projection can be controlled by controlling current and concentration of electroplating solution in the electroplating bath.
Because the photoresist is not conductive, the photoresist at the Edge of the silicon Wafer needs to be removed before the electroplating process, and the size of the Edge removing width depends on the Edge removing width of the previous silicon Wafer Edge Exposure (WEE) process. The traditional silicon wafer edge removing method mainly comprises a chemical edge removing method and an edge exposure method. The chemical edge-removing method is to spray solvent to the edge of the silicon wafer to remove photoresist on the edge of the silicon wafer in the gluing process of the silicon wafer, and the method has the defects of long edge-removing time, high solvent material consumption cost and easy spraying of the solvent to the middle pattern area of the silicon wafer, thereby seriously affecting the pattern quality. The edge exposure method is that a silicon wafer is absorbed on a rotary platform in vacuum, a set of ultraviolet exposure lens is fixed above the edge of the silicon wafer to generate uniform illumination light spots with certain sizes, and then the edge exposure of the silicon wafer is realized by utilizing the rotation of the rotary platform. Compared with a chemical edge removing method, the edge exposure method has the advantages of high production efficiency, low device cost, easy process control and the like.
In the edge exposure process, after the silicon wafer is transferred to the rotary platform, the silicon wafer is firstly subjected to pre-alignment treatment, because the position of the silicon wafer transferred to the pre-alignment system is random and has position errors, and the aim of pre-alignment is to adjust the deviation so as to finish the centering of the silicon wafer and the orientation of the notch. The centering is to move the centroid of the silicon wafer to the centroid of the rotating table to enable the centroid to be superposed, and the orientation is to rotate the notch of the silicon wafer to a specified position, so that the silicon wafer can be transmitted to the exposure table in a fixed posture to be exposed. The pre-alignment is a precise positioning before the exposure of the silicon wafer edge, and the positioning precision directly influences the working efficiency of the whole silicon wafer processing device.
In the prior art, the pre-alignment and the edge exposure of the silicon wafer are usually completed by two sets of devices, two sets of independent control systems are required, the occupied space is large, the number of controlled objects is large, the control on the motion axes such as a switching axis, a rotating axis, a lifting axis, a fixed axis and the like needs to be realized simultaneously, the pre-alignment method is complicated, the system design is complex, the energy consumption is high, and the cost is high.
Disclosure of Invention
The embodiment of the invention provides an edge exposure device, an edge exposure method and photoetching equipment, wherein the edge exposure device can realize the functions of pre-alignment and edge exposure of a silicon wafer simultaneously, can reduce control objects, and has the advantages of simple and compact structure, low cost, easiness in module integration and debugging and the like.
In a first aspect, an embodiment of the present invention provides an edge exposure apparatus, configured to perform pre-alignment and edge exposure on a silicon wafer, and including a pre-alignment module, an edge exposure module, a motion module, a control module, and a fixing module; the pre-alignment module, the edge exposure module, the motion module and the control module are all connected with the fixed module, and the pre-alignment module, the edge exposure module and the motion module are all connected with the control module;
the motion module comprises an X-direction motion mechanism, a Y-direction motion mechanism, a Z-direction lifting mechanism and a rotary table, the rotary table is used for bearing the silicon wafer, and the X-direction motion mechanism, the Y-direction motion mechanism and the Z-direction lifting mechanism are respectively used for driving the rotary table to move in the X direction, the Y direction and the Z direction;
the fixed module comprises a joint table, the joint table is used for bearing the silicon wafer after the pre-alignment module obtains the position error of the silicon wafer, and the control module is used for controlling the motion module to adjust the position of the rotating table according to the position error so as to realize the pre-alignment of the silicon wafer;
the control module is also used for controlling the motion module to acquire the silicon wafer from the interface table after pre-alignment and moving the silicon wafer to the position of the edge exposure module for edge exposure;
the X direction and the Y direction are vertical and parallel to the plane of the silicon wafer, and the Z direction and the X direction and the Y direction are vertical.
In a second aspect, an embodiment of the present invention further provides an edge exposure method, which is performed by using the edge exposure apparatus described above, where the edge exposure method includes:
placing a silicon wafer on a rotating table;
the pre-alignment module acquires the position error of the silicon wafer, and the motion module transmits the silicon wafer to a transfer table;
the control module controls the motion module to adjust the position of the rotating platform according to the position error so as to realize the pre-alignment of the silicon wafer;
and after pre-alignment, the control module controls the motion module to acquire the silicon wafer from the transfer platform and moves the silicon wafer to the position of the edge exposure module for edge exposure.
In a third aspect, an embodiment of the present invention further provides a lithographic apparatus including the edge exposure device described above.
The edge exposure device provided by the embodiment of the invention comprises a pre-alignment module, an edge exposure module, a motion module, a control module and a fixing module; the movement module comprises an X-direction movement mechanism, a Y-direction movement mechanism, a Z-direction lifting mechanism and a rotary table, a silicon wafer is loaded through the rotary table, and the pre-alignment module and the edge exposure module share the same rotary table, so that the system structure is simplified; the X-direction movement mechanism, the Y-direction movement mechanism and the Z-direction lifting mechanism respectively drive the rotating platform to move in the X direction, the Y direction and the Z direction; the pre-alignment device is characterized in that the fixing module comprises a joint table, the joint table carries a silicon wafer after the pre-alignment module acquires the position error of the silicon wafer, and the control module controls the movement module to adjust the position of the rotating table according to the position error so as to achieve pre-alignment of the silicon wafer; the control module controls the motion module to acquire the silicon wafer from the transfer platform after the pre-alignment and moves to the edge exposure module for edge exposure, so that the pre-alignment and edge exposure functions of the silicon wafer can be realized simultaneously, control objects can be reduced, and the control module has the advantages of simple and compact structure, low cost, easiness in module integration debugging and the like.
Drawings
FIG. 1 is a schematic structural diagram of an edge exposure apparatus according to an embodiment of the present invention;
fig. 2 is a diagram illustrating a position correspondence relationship between an X, Y-directional motion trajectory and a pre-aligned coordinate system according to an embodiment of the present invention;
FIG. 3 is a schematic view of the moving direction of the turntable and the angle of the image capturing unit according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of pre-alignment station switching provided by an embodiment of the present invention;
FIG. 5 is a schematic diagram illustrating an edge exposure station switch according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a silicon wafer geometric coordinate system;
FIG. 7 is a schematic view of an edge detection coordinate system;
FIG. 8 is a schematic diagram of the travel of a Z-direction lift mechanism station provided by an embodiment of the present invention;
FIG. 9 is a schematic focusing diagram of a large warp silicon wafer according to an embodiment of the present invention;
FIG. 10 is a block diagram illustrating a control architecture of an edge exposure apparatus according to an embodiment of the present invention;
fig. 11 is a schematic flowchart of an edge exposure method according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not to be construed as limiting the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
The terminology used in the embodiments of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. It should be noted that the terms "upper", "lower", "left", "right", and the like used in the description of the embodiments of the present invention are used in the angle shown in the drawings, and should not be construed as limiting the embodiments of the present invention. In addition, in this context, it is also to be understood that when an element is referred to as being "on" or "under" another element, it can be directly formed on "or" under "the other element or be indirectly formed on" or "under" the other element through an intermediate element. The terms "first," "second," and the like, are used for descriptive purposes only and not for purposes of limitation, and do not denote any order, quantity, or importance, but rather are used to distinguish one element from another. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
Fig. 1 is a schematic structural diagram of an edge exposure apparatus according to an embodiment of the present invention, which is suitable for performing a pre-alignment and an edge exposure on a silicon wafer 100, and referring to fig. 1, the edge exposure apparatus includes a pre-alignment module 10, an edge exposure module 20, a movement module 30, a control module 40, and a fixing module 50; the pre-alignment module 10, the edge exposure module 20, the movement module 30 and the control module 40 are all connected with the fixed module 50, and the pre-alignment module 10, the edge exposure module 20 and the movement module 30 are all connected with the control module 40; the moving module 30 comprises an X-direction moving mechanism 31, a Y-direction moving mechanism 32, a Z-direction lifting mechanism 33 and a rotating table 34, wherein the rotating table 34 is used for bearing the silicon wafer 100, and the X-direction moving mechanism 31, the Y-direction moving mechanism 32 and the Z-direction lifting mechanism 33 are respectively used for driving the rotating table 34 to move in the X-direction, the Y-direction and the Z-direction; the fixing module 50 comprises a handover table 51, the handover table 51 is used for carrying the silicon wafer 100 after the pre-alignment module 10 obtains the position error of the silicon wafer 100, and the control module 40 is used for controlling the movement module 30 to adjust the position of the rotating table 34 according to the position error so as to achieve the pre-alignment of the silicon wafer 100; the control module 40 is further configured to control the motion module 30 to acquire the silicon wafer 100 from the interface platform 51 after the pre-alignment, and move to the position of the edge exposure module 20 for edge exposure; wherein, the X direction and the Y direction are vertical and parallel to the plane of the silicon chip 100, and the Z direction is vertical to both the X direction and the Y direction.
The pre-alignment comprises centering and orientation of the silicon wafer, the edge exposure is divided into three types according to the exposure process adapted to the requirement, namely full-circle exposure, linear exposure and segmented exposure, and the full-circle exposure can be exposure with a specified width at the edge position of the silicon wafer and exposure with a specified width at a distance from the edge of the silicon wafer. Illustratively, referring to fig. 1, the pre-alignment module 10 and the edge exposure module 20 are respectively located at both ends of the silicon wafer 100, the fixing module 50 includes a holder (not shown in fig. 1) fixing the modules, the X-direction moving mechanism 31 is disposed at the bottom, the Y-direction moving mechanism 32 is placed on the X-direction moving mechanism 31, the Z-direction elevating mechanism 33 is loaded on the Y-direction moving mechanism 32, and the rotary table 34 with a ceramic chuck is placed on the Z-direction elevating mechanism 33. The X-direction movement mechanism 31 and the Y-direction movement mechanism 32 realize horizontal movement, and can realize plane movement within a stroke constraint range; the Z-direction lifting mechanism 33 realizes vertical movement and focusing functions; the rotary stage 34 drives the silicon wafer 100 to rotate, thereby realizing the edge capture and exposure functions. The turntable 34 realizes the function of hand-over with an external manipulator, the hand-over mode is actively taken by the manipulator, namely the manipulator lifts to pick and place the silicon chip 100, and the turntable 34 only needs to be opened and closed. In order to realize the function of transferring the silicon wafer 100 during the pre-alignment centering, the transfer table 51 is designed such that the transfer table 51 is an independent fixed structure and is stationary. Optionally, the pre-alignment module 10 includes an image acquisition unit, and the pre-alignment of the silicon wafer 100 includes centering and orienting; the image acquisition unit is used for acquiring edge data of a circle of rotation of the silicon wafer 100 driven by the rotating platform 34; the control module 40 is used for calculating the eccentricity of the silicon wafer 100 according to the edge data, and controlling the position of the X-direction movement mechanism 31 and/or the Y-direction movement mechanism 32 to adjust the rotating table 34 according to the eccentricity when the silicon wafer 100 is loaded on the transfer table 51 so as to realize the centering of the silicon wafer; the image acquisition unit is further configured to acquire a position of a notch of the silicon wafer 100 after the centering is completed, so as to achieve the orientation of the silicon wafer 100. Specifically, when the rotary table 34 rotates the silicon wafer 100 one turn under the pre-alignment module 10, the eccentricity of the silicon wafer 100 is measured, in order to compensate the eccentricity of the silicon wafer 100, the rotary table 34 hands over the silicon wafer 100 to the handing-over table 51, and after the rotary table 34 moves to compensate the eccentricity of the silicon wafer 100, whether the eccentricity of the silicon wafer 100 is within a required range is detected through the contact sheet of the handing-over table 51, if the eccentricity is within the required range, the centering is completed, the notch position of the silicon wafer 100 is searched next, and the notch morphology and the positioning direction are accurately acquired. After the silicon wafer centering and orienting function is completed, the rotary table 34 moves with the wafer to a position right below the edge exposure module 30, and edge exposure, circular ring exposure, segmented exposure or linear exposure is performed according to actual requirements.
According to the technical scheme of the embodiment, the silicon wafer is loaded through the rotary table, and the pre-alignment module and the edge exposure module share the same rotary table, so that the system structure is simplified; the X-direction movement mechanism, the Y-direction movement mechanism and the Z-direction lifting mechanism respectively drive the rotating platform to move in the X direction, the Y direction and the Z direction; the pre-alignment device is characterized in that the fixing module comprises a joint table, the joint table carries a silicon wafer after the pre-alignment module acquires the position error of the silicon wafer, and the control module controls the movement module to adjust the position of the rotating table according to the position error so as to achieve pre-alignment of the silicon wafer; the control module controls the motion module to acquire the silicon wafer from the transfer table after the pre-alignment and moves to the edge exposure module for edge exposure, so that the pre-alignment and edge exposure functions of the silicon wafer can be realized simultaneously, control objects can be reduced, and the control module has the advantages of simple and compact structure, low cost, easiness in module integration and debugging and the like.
On the basis of the above technical solution, optionally, the control module calculates the eccentricity of the silicon wafer according to a silicon wafer centroid algorithm, where the silicon wafer centroid algorithm includes:
the equation of the silicon wafer satisfies:
wherein, R is the radius of the silicon chip, and A and B are the coordinates of the center of the circle of the silicon chip; order:
the following can be obtained:
x2+y2+ax+by+c＝0 (3)；
sampling point (x) of edge datai,yi) i belongs to the group of (1,2,3.. n), the distance from any point to the center of the circle is diThe method comprises the following steps:
di 2＝(xi-A)2+(yi-B)2 (4)；
then point (x)i，yi) Distance to the edge of the silicon wafer sigmaiSatisfies the following conditions:
order to
A, B, R for the parameters a, b, c to make Q (a, b, c) the smallest available;
order:
solving can be carried out as follows:
so as to obtain the coordinates and the radius of the center of the silicon wafer:
in the algorithm, the silicon wafer is considered as a standard circle, fitting is carried out by using a least square method, and the position and the radius of the circle center are calculated. In the actual measurement process, the data of each point on the edge of the silicon wafer is obtained by measuring the distance from each point on the edge of the silicon wafer to the center of the rotary table and the corresponding angle of the rotary table.
The pre-alignment centering algorithm mainly aims to move the centroids (A and B) of the silicon wafers to the center (origin of coordinates) of the turntable, and the silicon wafers are handed over to the handing-over table, and the X-direction movement mechanism and the Y-direction movement mechanism respectively move by the distance of the A and the distance of the B, so that the purpose of correcting and compensating the eccentricity of the silicon wafers is achieved.
Before the eccentricity is compensated, the fixed errors caused by the rotating distance of the rotating platform, the installation angle between the X-direction moving mechanism and the pre-alignment module, the installation inclination of the pre-alignment module and the like need to be considered and compensated, and the fixed compensation can be carried out as the system error in the pre-alignment model parameters. Optionally, the control module includes an error compensation unit, and the error compensation unit is configured to control the X-direction movement mechanism, the Y-direction movement mechanism, and the Z-direction lifting mechanism to perform error compensation and perform error compensation on the image acquisition unit before centering of the silicon wafer.
Specifically, because there may be a certain angle between the movement direction of the X-direction movement mechanism and the Y-direction movement mechanism and the image acquisition unit (e.g., CCD) of the pre-alignment module, fig. 2 shows a relationship diagram of the X, Y-direction movement track corresponding to the position of the pre-alignment coordinate system provided in the embodiment of the present invention, and the system error includes an included angle between the X-direction displacement track and the X-axis of the pre-alignment coordinate system, an included angle between the Y-direction displacement track and the Y-axis of the pre-alignment coordinate system, an included angle (i.e., a projection angle) between the Z-direction lifting track and the XOY plane of the pre-alignment coordinate system, and a projection direction of the Z-direction track.
Optionally, the error of the X-direction movement mechanism and the Y-direction movement mechanism is determined according to the following formula:
wherein the content of the first and second substances,
θx，θythe included angles theta between the X-direction movement mechanism and the Y-direction movement mechanism and the X axis in the pre-alignment coordinate system respectivelyzThe projection angle of the XOY plane in the Z-direction lifting mechanism and the pre-alignment coordinate system is shown, and e _ FinALX and e _ FinALY are respectively the adjustment quantity of the X-direction movement mechanism and the Y-direction movement mechanism influenced by the error.
FIG. 3 is a schematic view showing the movement direction of the turntable and the angle of the image capturing unit according to the embodiment of the present invention, in which the straight line of the image capturing unit (CCD) cannot be guaranteed to be parallel to the silicon wafer surface due to the installation, the included angle between the straight line and the image capturing unit is called the inclination angle of the CCD along the silicon wafer radius direction, the reciprocal of the other chord values is recorded as CCD _ tilt, and the movement distance of each centroid is recorded
Can obtain the product
And further obtaining the inclination error ccd _ tilt of the image acquisition unit as follows:
wherein
And i and n are integers.
The edge exposure device provided by the embodiment is designed in an integrated manner, and the pre-alignment module and the edge exposure module share the rotating table, so that the pre-alignment and the edge exposure of silicon wafers with different sizes can be realized. Optionally, the silicon wafer is a 6 inch silicon wafer, an 8 inch silicon wafer, or a 12 inch silicon wafer. Optionally, the alignment module and the edge exposure module are both fixedly connected to the fixing module, and the coordinate switching unit controls the X-direction movement mechanism or the Y-direction movement mechanism to move so as to realize edge exposure of silicon wafers with different sizes.
For example, in order to be compatible with automatic switching of silicon wafers with different sizes, fig. 4 is a schematic diagram illustrating switching of a pre-alignment station according to an embodiment of the present invention, and fig. 5 is a schematic diagram illustrating switching of an edge exposure station according to an embodiment of the present invention. Referring to fig. 4, the pre-alignment stations of the 6-inch silicon wafer 101, the 8-inch silicon wafer 102, and the 12-inch silicon wafer 103 are designed at different positions, mainly the difference of the positions in the X direction is obtained, the Y direction is kept consistent, the pre-alignment module 10 is fixed, the silicon wafer coordinate system is determined, and meanwhile, the pre-alignment stations of various types of silicon wafers are conveniently determined during integrated debugging. Considering the silicon wafer eccentricity from the wafer placing of the external equipment to the rotating table, the safety interlocking position and the movement safety margin of the X-direction movement mechanism 31 and the Y-direction movement mechanism 32, the full strokes of the X-direction movement mechanism 31 and the Y-direction movement mechanism 32 are designed to be S1 and R1 respectively, the movement accuracies are designed to be phi 1 and phi 2 respectively, and the orthogonality is beta. Referring to fig. 5, during the edge exposure process, the X-direction movement mechanism 31 and the Y-direction movement mechanism 32 are switched to the position below the edge exposure module 20, so that the edges of the 6-inch silicon wafer 101, the 8-inch silicon wafer 102 and the 12-inch silicon wafer 103 are respectively tangent to the projected light spots of the edge exposure module 20. Meanwhile, during annular exposure, according to the requirements of the distance between the exposure position and the edge of the silicon wafer and the exposure width, the strokes of the X-direction movement mechanism 31 and the Y-direction movement mechanism 32 are designed to be S2 and R2 respectively. The stroke requirements of the linear exposure on the X-direction movement mechanism 31 and the Y-direction movement mechanism 32 are relatively strict, and particularly for 6-inch flat silicon wafers, the strokes of the X-direction movement mechanism 31 and the Y-direction movement mechanism 32 are designed to be S3 and R3 respectively according to the requirements of the flat edge linear exposure width and the exposure position. The strokes of the X-direction movement mechanism 31 and the Y-direction movement mechanism 32 are designed to be S0 and R0, respectively, in combination with the exposure width and position requirements of the three silicon wafer types.
The structural design has the problem that the coordinate systems of silicon wafers with different sizes are different, and conflicts exist in the data processing of pre-alignment and edge exposure. Optionally, the control module further includes a coordinate switching unit, and the coordinate switching unit is configured to switch coordinate systems corresponding to silicon wafers of different sizes.
The coordinate system used in the process of pre-aligning the silicon wafer comprises a silicon wafer geometric coordinate system (GWCS), a silicon Wafer Coordinate System (WCS) and an edge detection coordinate system (ESCS).
FIG. 6 is a schematic diagram of a silicon Wafer Geometric Coordinate System, and referring to FIG. 6, a silicon Wafer Geometric Coordinate System (GWCS: Geometric Wafer Coordinate System) is a Coordinate System established based on the silicon Wafer geometry. The origin of the GWCS is the center point of the silicon wafer, and the X direction is parallel to the flat edge (or perpendicular to the connection line of the center point of the silicon wafer and the center of mass of the notch).
The silicon Wafer Coordinate System (WCS) is a Coordinate System determined based on the position of a mark on a silicon Wafer, wherein the X direction of the WCS passes through the mark, and the Y direction is orthogonal to the X direction.
FIG. 7 is a schematic diagram of an Edge detection Coordinate System, and referring to FIG. 7, an Edge detection Coordinate System (ESCS) is a so-called pre-aligned Coordinate System. In the structural design of the rotating platform, the original point of the rotating platform is centered on the rotating platform, the X-direction original point and the Y-direction original point of the rotating platform use pre-alignment stations with various silicon wafer sizes as the original points, the Y negative direction points to the CCD array, and the X direction is orthogonal to the Y direction. The relation between GWCCS and ESCS can be measured through CCD, and the relation between WCS and GWCCS is provided by a process side. And after the relation between the WCS and the ESCS is determined, calculating the relation between the WCS and the ESCS coordinate system, and finally handing over the silicon wafer to an external equipment station coordinate system ESCS.
The edge exposure device provided by the embodiment also has an automatic focusing function of a large-warpage silicon wafer. Optionally, the silicon wafer is an edge warped silicon wafer; the control module further comprises an automatic focusing unit, and the automatic focusing unit is used for controlling the Z-direction lifting mechanism to drive the rotary table to move along the Z direction so as to realize automatic focusing of the edge warped silicon wafer.
Optionally, the warpage size of the silicon wafer is less than or equal to 9 mm.
Specifically, the design of the Z-direction lifting mechanism in the rotating platform structure can not only ensure the silicon wafer handover function of centering compensation in the pre-alignment process, but also realize the automatic adjustment function of the edge exposure focal plane, which is obviously different from the conventional pre-alignment and edge exposure design. Fig. 8 is a schematic diagram showing the station stroke of a Z-direction lifting mechanism according to an embodiment of the present invention, and referring to fig. 8, in addition to the safety interlock and the emergency stop device, a low-level handover position, a C-chuck handover position with a handover stage, a pre-alignment position and an edge exposure position are provided. In one embodiment, the upper and lower safety margins of the pre-alignment station and the edge exposure station are 5mm, and silicon wafers with upper and lower warping of 5mm can be processed.
In order to realize the automatic focusing function of the large-warpage silicon wafer in the edge exposure process, the embodiment of the invention provides a processing strategy for automatically identifying the edge of the large-warpage silicon wafer, and the processing strategy is mainly characterized in that an image processing unit automatically identifies the focal plane of an image according to a certain image identification algorithm to achieve the function of intelligent processing. Optionally, the image processing unit is further configured to acquire an image of the edge-warped silicon wafer, and the automatic focusing unit calculates a movement distance of the Z-direction lifting mechanism according to an image recognition algorithm; the formula of the image processing algorithm satisfies:
where M, N corresponds to the number of rows and columns of an image, i, j denote the position of the pixels and R denotes the contrast of the image. The larger the magnitude of the contrast R, the sharper the image and the better the focus.
Fig. 9 is a schematic view of focusing a silicon wafer with large warpage according to an embodiment of the present invention, and referring to fig. 9, when the contrast of the focus values of adjacent images is smaller than a certain threshold, it indicates that the silicon wafer is very close to the focal plane, and at this time, only the Z-axis position needs to be finely adjusted, and at this time, the image quality tends to be better, and the Z-axis control amount is smaller. And when the contrast of the focus values of the adjacent images is larger than a certain threshold value, indicating that the silicon wafer is out of focus more, controlling the Z axis to enter a large-step rapid focusing process. Assuming that the focusing mechanism is located at a point M at this time, the search direction is determined first, and since the focus value of the point N is greater than that of the point M, it is determined that the focusing mechanism needs to travel in the direction of the point N until the maximum value P is crossed to reach L, that is, the path is M-N-P-L. Starting with L, the fine adjustment is moved to the crest P until P. And repeating the steps, wherein the step distance is correspondingly reduced every time of searching, the two maximum focus values obtained in two adjacent times of searching are compared, and when the comparison value is less than a certain threshold value, the optimal focal plane is considered to be reached. And after finding the optimal focal plane, controlling the rotating table to rotate, measuring the focal planes at different points for multiple times, fitting the optimal focal plane curve of the edge of the silicon wafer, and synchronously controlling the Z axis to move according to the optimal focal plane curve at the corresponding position of the silicon wafer in the subsequent edge exposure rotation movement process, so that the purpose of automatically adjusting the optimal focal plane of the warped silicon wafer can be achieved.
Optionally, the edge exposure module includes an LED light source, a light source controller, an exposure lens, a light sieve baffle and an energy sensor, the light source controller is configured to control the LED light source to emit light, the exposure lens is configured to converge light emitted from the LED light source onto a silicon wafer, and the light sieve baffle and the energy sensor are configured to calibrate an initial illuminance machine constant and calculate a real-time illuminance value used in an exposure process.
The exposure lens is fixed, so that the stability of exposure performance can be ensured; a light screen separation blade and an energy sensor are arranged below the exposure lens and used for calibrating an initial illumination machine constant and calculating a real-time illumination value used in the exposure process before exposure of each glued silicon wafer, so that the requirements of illumination instantaneity and accuracy are met, and the exposure performance can be further ensured.
Optionally, the pre-alignment module, the edge exposure module, and the motion module are all connected to the control module via an ethernet, and the control module communicates with the pre-alignment module, the edge exposure module, and the motion module via a TCP/IP protocol.
For example, fig. 10 is a schematic diagram of a control architecture of an edge exposure apparatus according to an embodiment of the present invention, and referring to fig. 10, in order to optimize the control architecture and save product cost and integrated debugging cost, a TCP/IP network control architecture is adopted in the embodiment of the present invention, signals included in 4-axis motion are all connected to a PA (encoder, motor line, etc.), the PA drives a motor to move, 8 analog quantity signals, such as a vacuum positive voltage, an LED constant current power supply, and an LED exposure light source, required for pre-alignment are processed by an analog I/O module, and 20 digital quantity signals, such as an electromagnetic valve, a brake, and a 4-axis limit sensor, are processed by a digital I/O module. The control mode is that the Ethernet controls the PA and the digital-analog I/O module through the ACS controller, and the pre-alignment CCD camera, the sensor and the Cameralink bus are directly connected to the Ethernet network control by adopting the network port camera. The control mode saves fussy communication components such as a case, a PPC board card, an MCD board card and a PAC board card under a VME framework, really realizes the equipment modular control of TCP/IP, is simple and convenient, is very convenient to integrate, and effectively reduces the product cost.
In summary, the edge exposure apparatus provided by the embodiment of the present invention has the following characteristics: the pre-alignment module and the edge exposure module share a rotating table, so that the integrated design is realized, the structure is simple and compact, the cost is low, and the software flow can be simplified; the control method adopts a TCP/IP control mode and adopts an I/O module for control, and a VME control framework (comprising a case, a PPC board card, an MCD board card and the like) is not required to be adopted, so that only one network cable is required for external communication, the control is simple and reliable, and the modularization integration debugging is easy; the LED light source is adopted to replace the traditional mercury lamp light source, so that the illumination is high, the exposure time is short, the switching time of the light source is short, the environment is protected, the energy is saved, the service life is long, and the yield is improved; the automatic focusing of the large-warpage silicon wafer is realized, the exposure performance of the large-warpage silicon wafer is ensured, and the exposure performance requirement of a customer process on the silicon wafer is met; the functions of pre-alignment and edge exposure are compatible with 6 inches, 8 inches and 12 inches, product functions are increased, hardware replacement is reduced, and the automatic switching function of three silicon wafer sizes of a customer can be met.
Fig. 11 is a schematic flow chart of an edge exposure method according to an embodiment of the present invention, where the edge exposure method according to the embodiment may be executed by any one of the edge exposure apparatuses according to the embodiments, and the edge exposure method includes:
step S110, the silicon wafer is placed on a turntable.
Wherein the operation may be performed by a robot.
And step S120, the pre-alignment module acquires the position error of the silicon wafer, and the motion module transmits the silicon wafer to the transfer table.
And S130, the control module controls the motion module to adjust the position of the rotating platform according to the position error so as to realize the pre-alignment of the silicon wafer.
The motion module comprises an X-direction motion mechanism, a Y-direction motion mechanism, a Z-direction lifting mechanism and a rotary table, the rotary table is used for bearing a silicon wafer, and the X-direction motion mechanism, the Y-direction motion mechanism and the Z-direction lifting mechanism are respectively used for driving the rotary table to move in the X direction, the Y direction and the Z direction. The pre-alignment module comprises an image acquisition unit, and the pre-alignment of the silicon wafer comprises centering and orientation; the image acquisition unit acquires edge data of a circle of silicon wafer driven by the rotating platform; the control module calculates the eccentricity of the silicon wafer according to the edge data, and controls the X-direction movement mechanism and/or the Y-direction movement mechanism to adjust the position of the rotating platform according to the eccentricity when the silicon wafer is loaded on the transfer platform so as to realize the centering of the silicon wafer; and the image acquisition unit acquires the notch position of the silicon wafer after the centering is finished so as to realize the orientation of the silicon wafer.
Step S140, the control module controls the motion module to acquire the silicon wafer from the interface platform after the pre-alignment, and moves to the edge exposure module for edge exposure.
According to the technical scheme of the embodiment, the silicon wafer is loaded through the rotary table, and the pre-alignment module and the edge exposure module share the same rotary table, so that the system structure is simplified; the X-direction movement mechanism, the Y-direction movement mechanism and the Z-direction lifting mechanism respectively drive the rotating platform to move in the X direction, the Y direction and the Z direction; the pre-alignment device is characterized in that the fixing module comprises a joint table, the joint table carries a silicon wafer after the pre-alignment module acquires the position error of the silicon wafer, and the control module controls the movement module to adjust the position of the rotating table according to the position error so as to achieve pre-alignment of the silicon wafer; the control module controls the motion module to acquire the silicon wafer from the transfer platform after the pre-alignment and moves to the edge exposure module for edge exposure, so that the pre-alignment and edge exposure functions of the silicon wafer can be realized simultaneously, control objects can be reduced, and the control module has the advantages of simple and compact structure, low cost, easiness in module integration debugging and the like.
The embodiment of the invention also provides a lithographic apparatus, which comprises any one of the edge exposure devices provided by the above embodiments. Since the lithographic apparatus provided by the embodiment of the present invention includes any one of the edge exposure devices provided in the above embodiments, the same or corresponding technical effects as those of the edge exposure device can be achieved.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (15)
1. An edge exposure device is used for carrying out pre-alignment and edge exposure on a silicon wafer and is characterized by comprising a pre-alignment module, an edge exposure module, a motion module, a control module and a fixing module; the pre-alignment module, the edge exposure module, the motion module and the control module are all connected with the fixed module, and the pre-alignment module, the edge exposure module and the motion module are all connected with the control module;
the motion module comprises an X-direction motion mechanism, a Y-direction motion mechanism, a Z-direction lifting mechanism and a rotary table, the rotary table is used for bearing the silicon wafer, and the X-direction motion mechanism, the Y-direction motion mechanism and the Z-direction lifting mechanism are respectively used for driving the rotary table to move in the X direction, the Y direction and the Z direction;
the fixed module comprises a joint table, the joint table is used for bearing the silicon wafer after the pre-alignment module obtains the position error of the silicon wafer, and the control module is used for controlling the motion module to adjust the position of the rotating table according to the position error so as to realize the pre-alignment of the silicon wafer;
the control module is also used for controlling the motion module to acquire the silicon wafer from the interface table after pre-alignment and moving the silicon wafer to the position of the edge exposure module for edge exposure;
the X direction and the Y direction are vertical and parallel to the plane of the silicon wafer, and the Z direction and the X direction and the Y direction are vertical.
2. The edge exposure apparatus of claim 1, wherein the pre-alignment module comprises an image acquisition unit, and the pre-alignment of the silicon wafer comprises centering and orienting;
the image acquisition unit is used for acquiring edge data of a circle of the silicon wafer driven by the rotating platform;
the control module is used for calculating the eccentricity of the silicon wafer according to the edge data and controlling the X-direction movement mechanism and/or the Y-direction movement mechanism to adjust the position of the rotating platform according to the eccentricity when the silicon wafer is loaded on the cross platform so as to realize the centering of the silicon wafer;
the image acquisition unit is also used for acquiring the notch position of the silicon wafer after the centering is finished so as to realize the orientation of the silicon wafer.
3. The edge exposure apparatus of claim 2, wherein the control module calculates the eccentricity of the silicon wafer according to a silicon wafer centroid algorithm, the silicon wafer centroid algorithm comprising:
the equation of the silicon wafer satisfies:
wherein, R is the radius of the silicon chip, and A and B are the coordinates of the center of the circle of the silicon chip; order:
the following can be obtained:
x2+y2+ax+by+c＝0；
sample points (x) of the edge datai,yi) i belongs to the group of (1,2,3.. n), the distance from any point to the center of the circle is diThe method comprises the following steps:
di 2＝(xi-A)2+(yi-B)2；
then point (x)i，yi) Distance to the edge of the silicon wafer sigmaiSatisfies the following conditions:
σi 2＝di 2-R2＝xi 2+yi 2+axi+byi+c；
order to
A, B, R for the parameters a, b, c to make Q (a, b, c) the smallest available;
order:
solving to obtain:
so as to obtain the coordinates and the radius of the center of the silicon wafer:
4. the edge exposure apparatus according to claim 2, wherein the control module comprises an error compensation unit, and the error compensation unit is configured to control the X-direction motion mechanism, the Y-direction motion mechanism, and the Z-direction lifting mechanism to perform error compensation and perform error compensation on the image capturing unit before the silicon wafer is centered.
5. The edge exposure apparatus according to claim 4, wherein the errors of the X-direction movement mechanism and the Y-direction movement mechanism are determined according to the following equation:
wherein the content of the first and second substances,
θx，θyrespectively, the included angles theta between the X-direction motion mechanism and the Y-direction motion mechanism and the X axis in the pre-alignment coordinate systemzIs the projection angle of the XOY plane in the Z-direction lifting mechanism and the pre-alignment coordinate system, and e _ FinALX and e _ FinALY are respectively the adjustment quantity of the X-direction movement mechanism and the Y-direction movement mechanism influenced by errors;
the error ccd _ tilt of the image acquisition unit tilt is:
wherein
And i and n are integers.
6. The edge exposure apparatus of claim 2, wherein the silicon wafer is an edge warped silicon wafer;
the control module further comprises an automatic focusing unit, and the automatic focusing unit is used for controlling the Z-direction lifting mechanism to drive the rotary table to move along the Z direction so as to realize automatic focusing of the edge warped silicon wafer.
7. The edge exposure apparatus of claim 6, wherein the warp dimension of the silicon wafer is less than or equal to 9 mm.
8. The edge exposure device of claim 6, wherein the image processing unit is further configured to collect an image of the edge warped silicon wafer, and the auto-focusing unit calculates a movement distance of the Z-direction lifting mechanism according to an image recognition algorithm;
the formula of the image processing algorithm satisfies:
where M, N corresponds to the number of rows and columns of an image, i, j denote the position of the pixels and R denotes the contrast of the image.
9. The edge exposure apparatus of claim 1, wherein the silicon wafer is a 6 inch silicon wafer, an 8 inch silicon wafer, or a 12 inch silicon wafer.
10. The edge exposure apparatus according to claim 9, wherein the control module further comprises a coordinate switching unit, and the coordinate switching unit is configured to switch coordinate systems corresponding to silicon wafers of different sizes.
11. The edge exposure apparatus according to claim 10, wherein the alignment module and the edge exposure module are both fixedly connected to the fixing module, and the coordinate switching unit controls the X-direction movement mechanism or the Y-direction movement mechanism to move so as to realize edge exposure of silicon wafers with different sizes.
12. The edge exposure apparatus according to claim 1, wherein the edge exposure module comprises an LED light source, a light source controller, an exposure lens, a light sieve barrier, and an energy sensor, the light source controller is configured to control the LED light source to emit light, the exposure lens is configured to converge light emitted from the LED light source onto the silicon wafer, and the light sieve barrier and the energy sensor are configured to calibrate an initial illuminance machine constant and calculate a real-time illuminance value used in an exposure process.
13. The edge exposure apparatus of claim 1, wherein the pre-alignment module, the edge exposure module and the motion module are all connected to the control module via ethernet, and the control module communicates with the pre-alignment module, the edge exposure module and the motion module via TCP/IP protocol.
14. An edge exposure method performed by using the edge exposure apparatus according to any one of claims 1 to 13, the edge exposure method comprising:
placing a silicon wafer on a rotating table;
the pre-alignment module acquires the position error of the silicon wafer, and the motion module transmits the silicon wafer to a transfer table;
the control module controls the motion module to adjust the position of the rotating platform according to the position error so as to realize the pre-alignment of the silicon wafer;
and after pre-alignment, the control module controls the motion module to acquire the silicon wafer from the transfer platform and moves the silicon wafer to the position of the edge exposure module for edge exposure.
15. A lithographic apparatus comprising an edge exposure apparatus according to any one of claims 1 to 13.
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