CN114578655B - Edge exposure device, method and photoetching equipment - Google Patents

Edge exposure device, method and photoetching equipment Download PDF

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Publication number
CN114578655B
CN114578655B CN202011382563.3A CN202011382563A CN114578655B CN 114578655 B CN114578655 B CN 114578655B CN 202011382563 A CN202011382563 A CN 202011382563A CN 114578655 B CN114578655 B CN 114578655B
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silicon wafer
module
edge exposure
edge
alignment
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CN114578655A (en
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田翠侠
夏海
杨思雨
张建新
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Shanghai Micro Electronics Equipment Co Ltd
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Shanghai Micro Electronics Equipment Co Ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The embodiment of the invention discloses an edge exposure device, an edge exposure method and photoetching equipment. The device comprises a prealignment module, an edge exposure module, a motion module, a control module and a fixing module; the motion module comprises an X-direction motion mechanism, a Y-direction motion mechanism, a Z-direction lifting mechanism and a rotary table, and the rotary table is used for bearing silicon wafers; the fixing module comprises a connecting platform, the connecting platform is used for bearing the silicon wafer after the pre-alignment module obtains the position error of the silicon wafer, and the control module is used for controlling the movement module to adjust the position of the rotating platform according to the position error so as to realize the pre-alignment of the silicon wafer; the control module is also used for controlling the motion module to acquire the silicon wafer from the cross-connecting platform after pre-alignment and moving the silicon wafer to the position of the edge exposure module for edge exposure. The technical scheme of the embodiment of the invention not only can realize the pre-alignment and edge exposure functions of the silicon wafer, but also can reduce control objects, and has the advantages of simple and compact structure, low cost, easy module integration and debugging and the like.

Description

Edge exposure device, method and photoetching equipment
Technical Field
Embodiments of the present invention relate to integrated circuit manufacturing technologies, and in particular, to an edge exposure apparatus, an edge exposure method, and a lithographic apparatus.
Background
Electroplating is one of very important processes for packaging an IC circuit, and is characterized in that the edge of a silicon wafer is used as an anode, an electroplating window in the middle of the silicon wafer is used as a cathode, a certain direct current working voltage is applied between the anode and the cathode, and the height of a metal bump is controlled by controlling the current and the concentration of electroplating solution in an electroplating bath.
Since the photoresist is not conductive, the photoresist at the wafer edge is removed prior to the electroplating process, and the removal width is dependent on the removal width of the previous wafer edge exposure (WAFER EDGE Exclusion, WEE) process. Conventional wafer edge removal mainly comprises a chemical edge removal method and an edge exposure method. The chemical edge removing method is to remove photoresist at the edge of a silicon wafer by spraying a solvent to the edge of the silicon wafer in the process of gluing the silicon wafer, and has the defects of long edge removing time, high solvent consumable cost, easiness in spraying the solvent to a pattern area in the middle of the silicon wafer and serious influence on the pattern quality. The edge exposure method is to adsorb a silicon wafer on a rotary platform through vacuum, fix a set of ultraviolet exposure lens above the edge of the silicon wafer to generate uniform illumination light spots with a certain size, and then realize the edge exposure of the silicon wafer by utilizing the rotation of the rotary platform. Compared with the chemical edging method, the edge exposure method has the advantages of high production efficiency, low device cost, easy process control and the like.
In the edge exposure process, after the silicon wafer is transmitted to the rotary platform, the silicon wafer is firstly subjected to pre-alignment treatment, because the position of the silicon wafer transmitted to the pre-alignment system is random, and position errors exist, the purpose of the pre-alignment is to adjust the deviations, and the centering of the silicon wafer and the orientation of the notch are completed. The centering is to move the centroid of the silicon wafer to the centroid of the rotary table to enable the centroid of the silicon wafer and the centroid of the rotary table to coincide, and the orientation is to rotate the notch of the silicon wafer to a designated position, so that the silicon wafer can be transmitted to the exposure table for exposure in a fixed posture. The pre-alignment is one-time accurate positioning before the exposure of the silicon wafer edge, and the positioning accuracy directly influences the working efficiency of the whole silicon wafer processing device.
In the prior art, the pre-alignment of the silicon wafer and the edge exposure of the silicon wafer are usually completed by two sets of devices, two independent control systems are needed, the occupied space is large, more controlled objects are needed, the control of moving shafts such as a switching shaft, a rotating shaft, a lifting shaft, a centering shaft and the like is needed to be simultaneously realized, and the pre-alignment method is complex, the system design is complex, the energy consumption is high, and the cost is also high.
Disclosure of Invention
The embodiment of the invention provides an edge exposure device, an edge exposure method and photoetching equipment, which can realize the pre-alignment and edge exposure functions of a silicon wafer and reduce control objects, and have the advantages of simple and compact structure, low cost, easy module integration debugging and the like.
In a first aspect, an embodiment of the present invention provides an edge exposure apparatus, configured to perform pre-alignment and edge exposure on a silicon wafer, including a pre-alignment module, an edge exposure module, a motion module, a control module, and a fixing module; the pre-alignment module, the edge exposure module, the motion module and the control module are all connected with the fixed module, and the pre-alignment module, the edge exposure module and the motion module are all connected with the control module;
The motion module comprises an X-direction motion mechanism, a Y-direction motion mechanism, a Z-direction lifting mechanism and a rotary table, wherein the rotary table is used for bearing the silicon wafer, and the X-direction motion mechanism, the Y-direction motion mechanism and the Z-direction lifting mechanism are respectively used for driving the rotary table to move in X-direction, Y-direction and Z-direction;
The fixing module comprises a cross-connecting platform, the cross-connecting platform is used for bearing the silicon wafer after the pre-alignment module obtains the position error of the silicon wafer, and the control module is used for controlling the movement module to adjust the position of the rotating platform according to the position error so as to realize the pre-alignment of the silicon wafer;
The control module is also used for controlling the motion module to acquire the silicon wafer from the handover table after prealignment and moving the silicon wafer to the position of the edge exposure module for edge exposure;
Wherein the X direction is vertical to the Y direction and is parallel to the plane of the silicon wafer, and the Z direction is vertical to the X direction and the Y direction.
In a second aspect, an embodiment of the present invention further provides an edge exposure method, which is performed by using the edge exposure apparatus, where the edge exposure method includes:
Placing the silicon wafer on a rotary table;
the pre-alignment module acquires the position error of the silicon wafer, and the motion module transmits the silicon wafer to the handover platform;
The control module controls the motion module to adjust the position of the rotary table according to the position error so as to realize the pre-alignment of the silicon wafer;
And the control module controls the motion module to acquire the silicon wafer from the cross-connecting table after pre-alignment, and moves to the position of the edge exposure module to perform edge exposure.
In a third aspect, an embodiment of the present invention further provides a lithographic apparatus, including the edge exposure device described above.
The edge exposure device provided by the embodiment of the invention comprises a prealignment module, an edge exposure module, a motion module, a control module and a fixing module; the motion module comprises an X-direction motion mechanism, a Y-direction motion mechanism, a Z-direction lifting mechanism and a rotary table, silicon wafers are borne by the rotary table, and the prealignment module and the edge exposure module share the same rotary table, so that the system structure is simplified; the X-direction movement mechanism, the Y-direction movement mechanism and the Z-direction lifting mechanism respectively drive the rotary table to move in the X direction, the Y direction and the Z direction; the fixed module comprises a handover platform, the handover platform bears the silicon wafer after the pre-alignment module obtains the position error of the silicon wafer, and the control module controls the movement module to adjust the position of the rotary table according to the position error so as to realize the pre-alignment of the silicon wafer; the control module is used for controlling the motion module to acquire the silicon wafer from the handover platform after prealignment and moving to the position of the edge exposure module for edge exposure, so that the prealignment and the edge exposure functions of the silicon wafer can be realized simultaneously, control objects can be reduced, and the device has the advantages of simple and compact structure, low cost, easiness in module integration debugging and the like.
Drawings
FIG. 1 is a schematic diagram of an edge exposure apparatus according to an embodiment of the present invention;
Fig. 2 is a position correspondence diagram of X, Y motion tracks and a prealignment coordinate system provided by an embodiment of the present invention;
fig. 3 is a schematic view illustrating a movement direction of a rotary table and an angle of an image acquisition unit according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of pre-alignment station switching provided by an embodiment of the present invention;
FIG. 5 is a schematic diagram of switching between edge exposure stations according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a silicon wafer geometry coordinate system;
FIG. 7 is a schematic diagram of an edge detection coordinate system;
FIG. 8 is a schematic view of a Z-direction lifting mechanism station travel provided by an embodiment of the invention;
FIG. 9 is a schematic focusing diagram of a large warp silicon wafer according to an embodiment of the present invention;
FIG. 10 is a schematic diagram of a control architecture of an edge exposure apparatus according to an embodiment of the present invention;
fig. 11 is a flowchart of an edge exposure method according to an embodiment of the present invention.
Detailed Description
The invention is described in further detail below with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting thereof. It should be further noted that, for convenience of description, only some, but not all of the structures related to the present invention are shown in the drawings.
The terminology used in the embodiments of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. It should be noted that, the terms "upper", "lower", "left", "right", and the like in the embodiments of the present invention are described in terms of the angles shown in the drawings, and should not be construed as limiting the embodiments of the present invention. In addition, in the context, it will also be understood that when an element is referred to as being formed "on" or "under" another element, it can be directly formed "on" or "under" the other element or be indirectly formed "on" or "under" the other element through intervening elements. The terms "first," "second," and the like, are used for descriptive purposes only and not for any order, quantity, or importance, but rather are used to distinguish between different components. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
Fig. 1 is a schematic structural diagram of an edge exposure apparatus according to an embodiment of the present invention, where the edge exposure apparatus provided in the present embodiment may be suitable for performing pre-alignment and edge exposure on a silicon wafer 100, and referring to fig. 1, the edge exposure apparatus includes a pre-alignment module 10, an edge exposure module 20, a motion module 30, a control module 40, and a fixing module 50; the prealignment module 10, the edge exposure module 20, the motion module 30 and the control module 40 are all connected with the fixed module 50, and the prealignment module 10, the edge exposure module 20 and the motion module 30 are all connected with the control module 40; the motion module 30 comprises an X-direction motion mechanism 31, a Y-direction motion mechanism 32, a Z-direction lifting mechanism 33 and a rotary table 34, the rotary table 34 is used for bearing the silicon wafer 100, and the X-direction motion mechanism 31, the Y-direction motion mechanism 32 and the Z-direction lifting mechanism 33 are respectively used for driving the rotary table 34 to move in the X-direction, the Y-direction and the Z-direction; the fixing module 50 includes a transfer platform 51, the transfer platform 51 is used for carrying the silicon wafer 100 after the pre-alignment module 10 obtains the position error of the silicon wafer 100, and the control module 40 is used for controlling the movement module 30 to adjust the position of the rotary table 34 according to the position error so as to realize the pre-alignment of the silicon wafer 100; the control module 40 is further used for controlling the motion module 30 to acquire the silicon wafer 100 from the cross-connecting table 51 after pre-alignment and moving to the position of the edge exposure module 20 for edge exposure; wherein, the X direction is vertical to the Y direction and is parallel to the plane of the silicon wafer 100, and the Z direction is vertical to the X direction and the Y direction.
The pre-alignment comprises centering and orientation of the silicon wafer, the edge exposure is divided into three types according to the exposure process which is adapted to the requirement, namely full-circle exposure, linear exposure and sectional exposure, wherein the full-circle exposure can be width exposure designated at the edge position of the silicon wafer and width exposure designated at a distance from the edge of the silicon wafer. Illustratively, referring to FIG. 1, the prealignment module 10 and the edge exposure module 20 are respectively located at both ends of the silicon wafer 100, the fixing module 50 includes a bracket (not shown in FIG. 1) for fixing the respective modules, the X-direction moving mechanism 31 is disposed at the bottom, the Y-direction moving mechanism 32 is placed on the X-direction moving mechanism 31, and the Z-direction lifting mechanism 33 is loaded on the Y-direction moving mechanism 32, and the rotary table 34 with ceramic suction cups is placed on the Z-direction lifting mechanism 33. The X-direction movement mechanism 31 and the Y-direction movement mechanism 32 realize horizontal movement and can realize plane movement within a stroke constraint range; the Z-direction lifting mechanism 33 realizes the functions of vertical movement and focusing; the rotary table 34 drives the silicon wafer 100 to rotate, so that the edge collection and exposure functions are realized. The rotary table 34 realizes the function of connecting with an external manipulator in a way that the manipulator actively adopts, that is, the manipulator lifts and drops the silicon wafer 100, and the rotary table 34 only needs to switch on and off vacuum. In order to realize the function of delivering the silicon wafer 100 during the pre-alignment and centering, the delivering platform 51 is designed, and the delivering platform 51 is of an independent fixed structure and is static. Optionally, the pre-alignment module 10 includes an image acquisition unit, and the pre-alignment of the silicon wafer 100 includes centering and orientation; the image acquisition unit is used for acquiring edge data of the silicon wafer 100 driven by the rotary table 34 to rotate for one circle; the control module 40 is used for calculating the eccentric amount of the silicon wafer 100 according to the edge data, and controlling the X-direction movement mechanism 31 and/or the Y-direction movement mechanism 32 to adjust the position of the rotary table 34 according to the eccentric amount when the silicon wafer 100 is carried by the cross-connecting table 51 so as to realize the centering of the silicon wafer; the image acquisition unit is also used for acquiring the notch position of the silicon wafer 100 after centering is completed so as to realize the orientation of the silicon wafer 100. Specifically, when the rotary table 34 rotates one turn with the silicon wafer 100 under the prealignment module 10, the eccentric amount of the silicon wafer 100 is measured, in order to compensate the eccentric of the silicon wafer 100, the rotary table 34 transfers the silicon wafer 100 to the transfer table 51, after the rotary table 34 moves to compensate the eccentric amount of the silicon wafer 100, the transfer table 51 is connected to detect whether the eccentric amount of the silicon wafer 100 is within a required range, if the eccentric amount is within the required range, the centering is completed, the notch position of the silicon wafer 100 is searched, and the notch morphology and the positioning direction are accurately collected. After the centering and orienting functions of the silicon wafer are completed, the rotary table 34 moves to the position right below the edge exposure module 30, and edge exposure, ring exposure, segment exposure or linear exposure are implemented according to actual requirements.
According to the technical scheme, the silicon wafer is borne through the rotary table, the prealignment module and the edge exposure module share the same rotary table, and the system structure is simplified; the X-direction movement mechanism, the Y-direction movement mechanism and the Z-direction lifting mechanism respectively drive the rotary table to move in the X direction, the Y direction and the Z direction; the fixed module comprises a handover platform, the handover platform bears the silicon wafer after the pre-alignment module obtains the position error of the silicon wafer, and the control module controls the movement module to adjust the position of the rotary table according to the position error so as to realize the pre-alignment of the silicon wafer; the control module is used for controlling the motion module to acquire the silicon wafer from the handover platform after prealignment and moving to the position of the edge exposure module for edge exposure, so that the prealignment and the edge exposure functions of the silicon wafer can be realized simultaneously, control objects can be reduced, and the device has the advantages of simple and compact structure, low cost, easiness in module integration debugging and the like.
On the basis of the technical scheme, optionally, the control module calculates the eccentric amount of the silicon wafer according to a silicon wafer centroid algorithm, wherein the silicon wafer centroid algorithm comprises:
the equation for a silicon wafer satisfies:
wherein R is the radius of the silicon wafer, and (A, B) is the circle center coordinate of the silicon wafer; and (3) making:
The method can obtain:
x2+y2+ax+by+c＝0 (3)；
The distance from any point to the center of a circle is d i in sampling points (x i,yi) i e (1, 2,3.. Multidot.n.) of the edge data, and the sampling points are:
di 2＝(xi-A)2+(yi-B)2 (4)；
The distance σ i from point (x i,yi) to the wafer edge satisfies:
Order the Solving for parameters a, b, c such that Q (a, b, c) is the smallest achievable A, B, R;
And (3) making:
the solution can be obtained:
thereby obtaining the circle center coordinates and the radius of the silicon wafer as follows:
In the algorithm, the silicon wafer is considered as a standard circle, and the circle center position and the radius are calculated by fitting through a least square method. In the actual measurement process, the data of each point of the silicon wafer edge is obtained by measuring the distance from each point of the silicon wafer edge to the center of the turntable and the corresponding angle of the turntable.
The pre-alignment centering algorithm mainly solves the problem that the silicon wafer centroid (A, B) is moved to the center (origin of coordinates) of the turntable, and the X-direction movement mechanism and the Y-direction movement mechanism respectively move by the distance of A and B by transferring the silicon wafer to the transfer table, so that the purpose of correcting and compensating the eccentricity of the silicon wafer is achieved.
Before the eccentricity is compensated, fixed errors caused by the rotation distance of the rotary table, the installation angles of the X-direction movement mechanism and the Y-direction movement mechanism and the prealignment module, the installation inclination of the prealignment module and the like need to be considered and compensated, and the fixed errors can be used as systematic errors in prealignment model parameters for carrying out fixed compensation. Optionally, the control module includes an error compensation unit, and the error compensation unit is used for controlling the X-direction movement mechanism, the Y-direction movement mechanism and the Z-direction lifting mechanism to perform error compensation and performing error compensation on the image acquisition unit before centering the silicon wafer.
Specifically, since a certain angle exists between the motion direction of the X-direction motion mechanism and the motion direction of the Y-direction motion mechanism and the image acquisition unit (for example, CCD) of the pre-alignment module, fig. 2 shows a map of the position correspondence between the X, Y-direction motion track and the pre-alignment coordinate system, where the system error includes an included angle between the X-direction displacement track and the X-axis of the pre-alignment coordinate system, an included angle between the Y-direction displacement track and the Y-axis of the pre-alignment coordinate system, an included angle (i.e., a projection angle) between the Z-direction lifting track and the XOY plane of the pre-alignment coordinate system, and a projection direction of the Z-direction track.
Optionally, the error of the X-direction motion mechanism and the Y-direction motion mechanism is determined according to the following equation:
wherein,
Theta x,θy is the included angle of the X-axis in the pre-alignment coordinate system and the X-axis in the X-direction movement mechanism and the Y-direction movement mechanism, theta z is the projection angle of the X-axis in the Z-direction lifting mechanism and the X-axis in the pre-alignment coordinate system, and e_ FinalX and e_ FinalY are the adjustment amounts of the error-influencing X-direction movement mechanism and the Y-direction movement mechanism.
FIG. 3 is a schematic view showing the angles between the direction of motion of a rotary table and an image acquisition unit, wherein the straight line of the image acquisition unit (CCD) cannot be guaranteed to be parallel to the surface of a silicon wafer due to installation, the included angle between the straight line and the image acquisition unit is called the inclination angle of the CCD along the radial direction of the silicon wafer, the inverse of the cosine value is recorded as the ccd_tilt, and the motion distance of each centroid is recordedAvailability/>And then the error of the inclination of the image acquisition unit, ccd_tilt, is obtained as follows:
Wherein the method comprises the steps of And i and n are integers.
The edge exposure device provided by the embodiment is of an integrated design, and the prealignment module and the edge exposure module share the rotary table, so that prealignment and edge exposure of silicon wafers with various sizes can be realized. Alternatively, the silicon wafer is a 6 inch silicon wafer, an 8 inch silicon wafer, or a 12 inch silicon wafer. Optionally, the alignment module and the edge exposure module are fixedly connected with the fixing module, and the coordinate switching unit controls the X-direction movement mechanism or the Y-direction movement mechanism to move so as to realize the edge exposure of the silicon wafers with different sizes.
For example, in order to be compatible with automatic switching of silicon wafers with different sizes, fig. 4 is a schematic diagram of switching a pre-alignment station, and fig. 5 is a schematic diagram of switching an edge exposure station, which is provided by an embodiment of the present invention. Referring to fig. 4, prealignment stations of 6-inch silicon wafer 101, 8-inch silicon wafer 102 and 12-inch silicon wafer 103 are designed at different positions, mainly the difference of the X position and the Y position, the prealignment module 10 is fixed, a silicon wafer coordinate system is determined, and meanwhile, the prealignment stations of various silicon wafers are conveniently marked in integrated debugging. Considering the eccentric amount of the silicon wafer from the external equipment to the rotary table, the safety interlocking positions of the X-direction movement mechanism 31 and the Y-direction movement mechanism 32 and the movement safety margin, the full strokes of the X-direction movement mechanism 31 and the Y-direction movement mechanism 32 are respectively S1 and R1, the movement precision is respectively phi 1 and phi 2, and the orthogonality is beta. Referring to fig. 5, during edge exposure, the X-direction motion mechanism 31 and the Y-direction motion mechanism 32 are switched under the edge exposure module 20 such that the edges of the 6 inch silicon wafer 101, the 8 inch silicon wafer 102, and the 12 inch silicon wafer 103 are tangential to the projected spots of the edge exposure module 20, respectively. Meanwhile, in the annular exposure, according to the distance between the exposure position and the edge of the silicon wafer and the exposure width requirement, the strokes of the X-direction movement mechanism 31 and the Y-direction movement mechanism 32 are respectively designed to be S2 and R2. The linear exposure has strict requirements on the strokes of the X-direction movement mechanism 31 and the Y-direction movement mechanism 32, and particularly, for a 6-inch flat-edge silicon wafer, the strokes of the X-direction movement mechanism 31 and the Y-direction movement mechanism 32 are designed to be S3 and R3 respectively according to the requirements on the width and the position of the flat-edge linear exposure. The strokes of the X-direction movement mechanism 31 and the Y-direction movement mechanism 32 are designed to be S0 and R0 respectively by combining the exposure width and the position requirements of three silicon wafer types.
This structural design creates a problem in that the different dimensions of the wafer coordinate system are different, and there are conflicts in the data processing of the pre-alignment and edge exposure. Optionally, the control module further includes a coordinate switching unit, where the coordinate switching unit is used to switch coordinate systems corresponding to silicon wafers with different sizes.
Among the coordinate systems used in the wafer pre-alignment process are wafer geometry coordinate system (GWCS), wafer Coordinate System (WCS) and edge detection coordinate system (ESCS).
FIG. 6 is a schematic diagram of a silicon wafer geometry coordinate system, and referring to FIG. 6, the silicon wafer geometry coordinate system (GWCS: geometric Wafer Coordinate System) is a coordinate system established based on the silicon wafer geometry. GWCS is the origin of the silicon wafer center point, and the X direction is parallel to the flat edge (or perpendicular to the connecting line of the silicon wafer center point and the notch centroid).
The silicon wafer coordinate system (WCS: wafer Coordinate System) is a coordinate system determined based on the position of a mark on the silicon wafer, the X-direction of the WCS passes through the mark, and the Y-direction is orthogonal to the X-direction.
Fig. 7 is a schematic diagram of an edge detection coordinate system, and referring to fig. 7, the edge detection coordinate system (ESCS: edge Sensor Coordinate System) is a so-called pre-alignment coordinate system. In the structural design of the rotary table, the origin of the rotary table is taken as the center, the X-direction origin and the Y-direction origin of the rotary table are taken as the origins of prealignment stations with various silicon wafer sizes, the Y negative direction points to the CCD array, and the X direction is orthogonal to the Y direction. The relationship between GWCS-ESCS can be measured by CCD, and the relationship between WCS-GWCS is provided by the process side. After the relation between the WCS and the ESCS is determined, the relation between the WCS and the ESCS coordinate system can be calculated, and finally the silicon wafer is handed over to the ESCS of the station coordinate system of the external equipment.
The edge exposure device provided by the embodiment also has an automatic focusing function of the large-warpage silicon wafer. Optionally, the silicon wafer is an edge warp silicon wafer; the control module further comprises an automatic focusing unit, and the automatic focusing unit is used for controlling the Z-direction lifting mechanism to drive the rotary table to move along the Z direction so as to realize automatic focusing of the edge warping silicon wafer.
Optionally, the warp dimension of the silicon wafer is less than or equal to 9mm.
Specifically, the Z-direction lifting mechanism is designed in the rotary table structure, the design not only can ensure the silicon wafer handover function of centering compensation in the pre-alignment process, but also can realize the automatic adjustment function of the edge exposure focal plane, which is obviously different from the conventional pre-alignment and edge exposure designs. Fig. 8 is a schematic view of a station travel of a Z-direction lifting mechanism according to an embodiment of the present invention, and referring to fig. 8, a low-level interface, a C-chuck interface, a pre-alignment station, and an edge exposure station are provided in addition to a safety interlock and a scram device. In one embodiment, the safety margin of the pre-alignment station and the edge exposure station is 5mm, and the silicon wafer with 5mm of warpage can be processed.
In order to realize the automatic focusing function of the large-warp silicon wafer in the edge exposure process, the embodiment of the invention provides a processing strategy for automatically identifying the edge of the large-warp silicon wafer, which mainly comprises the steps that an image processing unit automatically identifies an image focal plane according to a certain image identification algorithm, so as to achieve the function of intelligent processing. Optionally, the image processing unit is further used for collecting images of the edge warped silicon wafer, and the automatic focusing unit calculates the movement distance of the Z-direction lifting mechanism according to an image recognition algorithm; the formula of the image processing algorithm satisfies:
Wherein M, N corresponds to the number of rows and columns of an image, i, j denote the positions of pixels, and R denotes the contrast of the image. The larger the magnitude of contrast R, the clearer the image, and the better the focus.
Fig. 9 is a schematic focusing diagram of a large-warpage silicon wafer according to an embodiment of the present invention, and referring to fig. 9, when the contrast of the focus values of adjacent images is smaller than a certain threshold value, it is indicated that the silicon wafer is close to the focal plane, and only the Z-axis position needs to be finely adjusted at this time, and at this time, the image quality tends to be better, and the Z-axis control amount is smaller. When the focus magnitude comparison of the adjacent images is larger than a certain threshold value, the silicon wafer is more out of focus, and the Z axis is controlled to enter a large-step rapid focusing process. Assuming that the focusing mechanism is located at the point M at this time, the search direction is first determined, and since the focus magnitude of the point N is greater than that of the point M, it is determined that the travel is required in the direction of the point N until the point L is reached beyond the maximum value P, i.e., the path is M-N-P-L. Starting from L, the motion fine-tuning to the crest P is performed until P. And repeating the steps, wherein each time of searching, the step distance is correspondingly reduced, the two maximum focusing values obtained in the two adjacent searches are compared, and when the comparison value is smaller than a certain threshold value, the optimal focal plane is considered to be reached. After the optimal focal plane is found, the rotary table is controlled to rotate, focal planes of different points are measured for multiple times, the optimal focal plane curve of the edge of the silicon wafer is fitted, and in the subsequent edge exposure rotating movement process, the Z axis is synchronously controlled to move according to the optimal focal plane curve of the corresponding position of the silicon wafer, so that the aim of automatically adjusting the optimal focal plane of the warped silicon wafer can be achieved.
Optionally, the edge exposure module includes LED light source, light source controller, exposure lens, light sieve separation blade and energy sensor, and light source controller is used for controlling the LED light source and shines, and the exposure lens is used for gathering the light that the LED light source was emergent on the silicon chip, and light sieve separation blade and energy sensor are used for demarcating initial illuminance machine constant and calculating the real-time illuminance value that uses in the exposure process.
The position of the exposure lens is fixed, so that the stability of the exposure performance can be ensured; the light screen baffle and the energy sensor are arranged below the exposure lens, and are used for calibrating an initial illuminance machine constant and calculating a real-time illuminance value used in the exposure process before each glued silicon wafer is exposed, so that the requirements of illuminance instantaneity and accuracy are met, and the exposure performance can be ensured.
Optionally, the pre-alignment module, the edge exposure module and the motion module are all connected with the control module through an ethernet, and the control module communicates with the pre-alignment module, the edge exposure module and the motion module through a TCP/IP protocol.
For example, fig. 10 is a schematic diagram of a control architecture of an edge exposure device provided by the embodiment of the present invention, referring to fig. 10, in order to optimize the control architecture and save product cost and integrated debugging cost, the embodiment of the present invention adopts a TCP/IP network control architecture, signals included in 4-axis motion are all connected to PA (encoder, motor line, etc.), the PA drives the motor to move, 8 analog signals of vacuum positive pressure, LED constant current power supply, LED exposure light source, etc. required for pre-alignment are processed by an analog I/O module, and 20 digital signals of solenoid valve, brake, 4-axis limit sensor are processed by a digital I/O module. The control mode is that the Ethernet controls the PA and the digital-analog I/O module through the ACS controller, and the prealigned CCD camera, the sensor and the camera link bus are directly connected to the Ethernet network control by adopting the network port camera. The control mode saves complex communication components such as a chassis, a PPC board card, an MCD board card, a PAC board card and the like under the VME architecture, really realizes the modular control of TCP/IP equipment, is simple and convenient, is very convenient to integrate, and effectively reduces the product cost.
In summary, the edge exposure device provided by the embodiment of the invention has the following characteristics: the prealignment module and the edge exposure module share the rotary table, so that the integrated design is realized, the structure is simple and compact, the cost is low, and the software flow is simplified; the TCP/IP control mode is adopted, the I/O module control is adopted, no VME control architecture (comprising a chassis, a PPC board card, an MCD board card and the like) is adopted for external communication, only one network cable is needed, the control is simple and reliable, and the modularized integrated debugging is easy; the LED light source is adopted to replace the traditional mercury lamp light source, so that the illumination intensity is high, the exposure time is short, the light source switching time is quick, the environment is protected, the energy is saved, the service life is long, and the yield is improved; the automatic focusing of the large-warpage silicon wafer is realized, the exposure performance of the large-warpage silicon wafer is ensured, and the exposure performance requirement of a customer process on the silicon wafer is met; the pre-alignment and edge exposure functions realize compatibility of 6 inches, 8 inches and 12 inches, increase product functions, reduce hardware replacement, and can meet the automatic switching function of three silicon wafer sizes of customers.
Fig. 11 is a schematic flow chart of an edge exposure method according to an embodiment of the present invention, where the edge exposure method according to the present embodiment may be performed by any one of the edge exposure apparatuses according to the foregoing embodiments, and the edge exposure method includes:
and S110, placing the silicon wafer on a rotary table.
Wherein the operation may be performed by a robot.
And step S120, the pre-alignment module acquires the position error of the silicon wafer, and the motion module transmits the silicon wafer to the handover platform.
And S130, the control module controls the motion module to adjust the position of the rotary table according to the position error so as to realize the pre-alignment of the silicon wafer.
The motion module comprises an X-direction motion mechanism, a Y-direction motion mechanism, a Z-direction lifting mechanism and a rotary table, wherein the rotary table is used for bearing a silicon wafer, and the X-direction motion mechanism, the Y-direction motion mechanism and the Z-direction lifting mechanism are respectively used for driving the rotary table to move in the X direction, the Y direction and the Z direction. The pre-alignment module comprises an image acquisition unit, and the pre-alignment of the silicon wafer comprises centering and orientation; the image acquisition unit acquires edge data of a silicon wafer driven by the rotary table to rotate for one circle; the control module calculates the eccentric amount of the silicon wafer according to the edge data, and controls the X-direction movement mechanism and/or the Y-direction movement mechanism to adjust the position of the rotary table according to the eccentric amount when the silicon wafer is borne by the handover table so as to realize the centering of the silicon wafer; the image acquisition unit acquires the notch position of the silicon wafer after centering is finished so as to realize orientation of the silicon wafer.
And S140, the control module controls the motion module to acquire the silicon wafer from the handover platform after pre-alignment, and moves to the position of the edge exposure module for edge exposure.
According to the technical scheme, the silicon wafer is borne through the rotary table, the prealignment module and the edge exposure module share the same rotary table, and the system structure is simplified; the X-direction movement mechanism, the Y-direction movement mechanism and the Z-direction lifting mechanism respectively drive the rotary table to move in the X direction, the Y direction and the Z direction; the fixed module comprises a handover platform, the handover platform bears the silicon wafer after the pre-alignment module obtains the position error of the silicon wafer, and the control module controls the movement module to adjust the position of the rotary table according to the position error so as to realize the pre-alignment of the silicon wafer; the control module is used for controlling the motion module to acquire the silicon wafer from the handover platform after prealignment and moving to the position of the edge exposure module for edge exposure, so that the prealignment and the edge exposure functions of the silicon wafer can be realized simultaneously, control objects can be reduced, and the device has the advantages of simple and compact structure, low cost, easiness in module integration debugging and the like.
The embodiment of the invention also provides a lithographic apparatus comprising any one of the edge exposure devices provided by the embodiment. Since the lithographic apparatus provided by the embodiment of the present invention includes any one of the edge exposure devices provided by the above embodiments, the same or corresponding technical effects as the edge exposure device are achieved.
Note that the above is only a preferred embodiment of the present invention and the technical principle applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, while the invention has been described in connection with the above embodiments, the invention is not limited to the embodiments, but may be embodied in many other equivalent forms without departing from the spirit or scope of the invention, which is set forth in the following claims.

Claims (13)

1. An edge exposure device is used for carrying out pre-alignment and edge exposure on a silicon wafer and is characterized by comprising a pre-alignment module, an edge exposure module, a motion module, a control module and a fixing module; the pre-alignment module, the edge exposure module, the motion module and the control module are all connected with the fixed module, and the pre-alignment module, the edge exposure module and the motion module are all connected with the control module;
The motion module comprises an X-direction motion mechanism, a Y-direction motion mechanism, a Z-direction lifting mechanism and a rotary table, wherein the rotary table is used for bearing the silicon wafer, and the X-direction motion mechanism, the Y-direction motion mechanism and the Z-direction lifting mechanism are respectively used for driving the rotary table to move in X-direction, Y-direction and Z-direction;
The fixing module comprises a cross-connecting platform, the cross-connecting platform is used for bearing the silicon wafer after the pre-alignment module obtains the position error of the silicon wafer, and the control module is used for controlling the movement module to adjust the position of the rotating platform according to the position error so as to realize the pre-alignment of the silicon wafer;
The control module is also used for controlling the motion module to acquire the silicon wafer from the handover table after prealignment and moving the silicon wafer to the position of the edge exposure module for edge exposure;
wherein the X direction is vertical to the Y direction and is parallel to the plane of the silicon wafer, and the Z direction is vertical to the X direction and the Y direction;
The control module further comprises a coordinate switching unit, wherein the coordinate switching unit is used for switching coordinate systems corresponding to silicon wafers with different sizes;
The alignment module and the edge exposure module are fixedly connected with the fixing module, and the coordinate switching unit controls the X-direction movement mechanism or the Y-direction movement mechanism to move so as to realize the edge exposure of silicon wafers with different sizes.
2. The edge exposure apparatus according to claim 1, wherein the pre-alignment module comprises an image acquisition unit, and the pre-alignment of the silicon wafer comprises centering and orientation;
The image acquisition unit is used for acquiring edge data of the silicon wafer driven by the rotary table to rotate for one circle;
The control module is used for calculating the eccentric amount of the silicon wafer according to the edge data, and controlling the X-direction movement mechanism and/or the Y-direction movement mechanism to adjust the position of the rotary table according to the eccentric amount when the silicon wafer is borne by the handover table so as to realize the centering of the silicon wafer;
The image acquisition unit is also used for acquiring the notch position of the silicon wafer after the centering is finished so as to realize the orientation of the silicon wafer.
3. The edge exposure apparatus according to claim 2, wherein the control module calculates the eccentric amount of the silicon wafer according to a silicon wafer centroid algorithm, the silicon wafer centroid algorithm comprising:
the equation for the silicon wafer satisfies:
wherein R is the radius of the silicon wafer, and (A, B) is the circle center coordinate of the silicon wafer; and (3) making:
The method can obtain:
x2+y2+ax+by+c＝0；
In the sampling points (x i,yi) i e (1, 2, 3....n.) of the edge data, the distance from any point to the center of the circle is di, and the sampling points are:
di 2＝(xi-A)2+(yi-B)2；
The distance σ i from point (x i,yi) to the wafer edge satisfies:
σi 2＝di 2-R2＝xi 2+yi 2+axi+byi+c;
Order the Solving for parameters a, b, c such that Q (a, b, c) is the smallest achievable A, B, R;
And (3) making:
the solution can be obtained:
thereby obtaining the circle center coordinates and the radius of the silicon wafer as follows:
4. The edge exposure apparatus according to claim 2, wherein the control module includes an error compensation unit for controlling the X-direction movement mechanism, the Y-direction movement mechanism, and the Z-direction lifting mechanism to perform error compensation and performing error compensation on the image pickup unit before centering of the silicon wafer is performed.
5. The edge exposure apparatus according to claim 4, wherein an error of the X-direction movement mechanism and the Y-direction movement mechanism is determined according to:
wherein,
Theta x,θy is the included angle between the X-direction movement mechanism and the X-axis of the Y-direction movement mechanism in a prealignment coordinate system, theta z is the projection angle between the Z-direction lifting mechanism and the XOY plane in the prealignment coordinate system, and e_ FinalX and e_ FinalY are the adjustment amounts of errors affecting the X-direction movement mechanism and the Y-direction movement mechanism;
The error of the inclination of the image acquisition unit, ccd_tilt, is:
Wherein the method comprises the steps of And i and n are integers.
6. The edge exposure apparatus according to claim 2, wherein the silicon wafer is an edge-warped silicon wafer;
the control module further comprises an automatic focusing unit, wherein the automatic focusing unit is used for controlling the Z-direction lifting mechanism to drive the rotary table to move along the Z direction so as to realize automatic focusing of the edge warping silicon wafer.
7. The edge exposure apparatus according to claim 6, wherein the warp dimension of the silicon wafer is 9mm or less.
8. The edge exposure apparatus according to claim 6, wherein the image acquisition unit is further configured to acquire an image of the edge-warped silicon wafer, and the autofocus unit calculates a movement distance of the Z-direction lifting mechanism according to an image recognition algorithm;
the formula of the image processing algorithm satisfies:
wherein M, N corresponds to the number of rows and columns of an image, i, j denote the positions of pixels, and R denotes the contrast of the image.
9. The edge exposure apparatus of claim 1, wherein the silicon wafer is a 6 inch silicon wafer, an 8 inch silicon wafer, or a 12 inch silicon wafer.
10. The edge exposure apparatus according to claim 1, wherein the edge exposure module comprises an LED light source, a light source controller for controlling the LED light source to emit light, an exposure lens for converging light emitted from the LED light source onto the silicon wafer, a light screen shutter and an energy sensor for calibrating an initial illuminance machine constant and calculating a real-time illuminance value used in an exposure process.
11. The edge exposure apparatus according to claim 1, wherein the pre-alignment module, the edge exposure module, and the movement module are all connected to the control module through an ethernet network, and the control module communicates with the pre-alignment module, the edge exposure module, and the movement module through a TCP/IP protocol.
12. An edge exposure method, characterized in that it is performed by using the edge exposure apparatus according to any one of claims 1 to 11, comprising:
Placing the silicon wafer on a rotary table;
the pre-alignment module acquires the position error of the silicon wafer, and the motion module transmits the silicon wafer to the handover platform;
The control module controls the motion module to adjust the position of the rotary table according to the position error so as to realize the pre-alignment of the silicon wafer;
And the control module controls the motion module to acquire the silicon wafer from the cross-connecting table after pre-alignment, and moves to the position of the edge exposure module to perform edge exposure.
13. A lithographic apparatus comprising an edge exposure device according to any one of claims 1 to 12.
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