CN114690581A - Automatic focusing device, exposure device, photoetching device and exposure method - Google Patents
Automatic focusing device, exposure device, photoetching device and exposure method Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
- G03F7/70725—Stages control
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Abstract
The invention provides an automatic focusing device, an exposure device, a photoetching device and an exposure method, wherein the automatic focusing device comprises a motion unit, a wafer bearing table, a displacement sensor detection device and a control system; the wafer bearing table is arranged on the motion unit and is configured to bear a substrate; the moving unit is configured to drive the wafer bearing platform to do up-and-down lifting movement in the vertical direction and to do rotating movement along the axial direction of the wafer bearing platform; the displacement sensor detection device is arranged below the substrate on the wafer bearing table and is configured to collect the warping amount of the substrate; the control system is configured to control the movement unit to drive the wafer bearing table to move up and down in the vertical direction according to the warping amount of the substrate so as to automatically focus the substrate in the exposure process. The automatic focusing device provided by the invention can ensure that the exposure surface of the large warping sheet is overlapped with the focal plane of the projection objective as far as possible in the exposure process, thereby achieving the best exposure performance.
Description
Technical Field
The invention relates to the technical field of semiconductor processing and manufacturing, in particular to an automatic focusing device, an exposure device, a photoetching device and an exposure method.
Background
A lithographic apparatus is a primary device in the manufacture of integrated circuits and functions to sequentially image different mask patterns onto a substrate (e.g., a semiconductor wafer or an LCD panel) in a precisely aligned position. However, this alignment position is changed due to the physical and chemical changes experienced by the successive patterns, and therefore an alignment system is required to ensure that the alignment position of the corresponding mask of the wafer can be accurately aligned each time. As the number of electronic components per unit surface area of the substrate increases and the size of the electronic components becomes smaller and smaller, the precision requirement of the integrated circuit increases, so that the position of the sequential mask image on the substrate must be fixed more and more accurately, and the alignment precision during photolithography is also higher and more.
In the prior art, in order to enable a projection objective to clearly project a mask pattern onto a workpiece, it is necessary to measure whether an exposure surface of the workpiece coincides with a focal surface of the projection objective, so a focusing and leveling sensor system is usually used to measure a vertical position of the exposure surface of the workpiece, and a focusing and leveling device is used to support a stage for movement so as to enable the exposure surface of the workpiece to coincide with the focal surface of the projection objective, thereby implementing a focusing operation.
However, with the development of the semiconductor industry, the types of silicon wafers are increasing, and in recent years, new requirements for a focusing device are provided by the appearance of a warping sheet, wherein the warping sheet refers to the condition that a substrate is uneven, and the cross section of the whole sheet is arched or bowl-shaped or has uneven parts. Because the surfaces of the warping sheet, particularly the edge part of the large warping sheet are not on the same horizontal plane, the optimal exposure surface at each position of the edge surface of the large warping sheet is not fixed, if the large warping sheet is subjected to focusing operation according to the traditional focusing and leveling method in the prior art, the exposure surface at some positions on the surface of the large warping sheet may be superposed with the focal plane of the projection objective, but the exposure surfaces of the rest parts to be exposed are deviated from the focal plane of the projection objective, the exposure effect of the exposure method cannot be optimal, and the exposure performance of the substrate cannot be guaranteed.
Therefore, a focusing scheme for the large warping sheet is urgently needed, so that the exposure surface of the large warping sheet and the focal plane of the projection objective lens can be kept coincident as much as possible in the exposure process, and the optimal exposure performance is achieved.
Disclosure of Invention
The invention aims to provide an automatic focusing device, an exposure device, a photoetching device and an exposure method, which can solve the problem that in the prior art, no proper scheme is provided for edge exposure of a large-warping silicon wafer, so that the exposure surface of the large-warping silicon wafer is kept coincident with the focal plane of a projection objective as much as possible in the exposure process, and the optimal exposure performance is achieved.
In order to solve the technical problem, the invention provides an automatic focusing device which is used for automatically focusing a substrate in an exposure process and comprises a motion unit, a wafer bearing table, a displacement sensor detection device and a control system; the wafer bearing table is arranged on the motion unit and is configured to bear the substrate; the moving unit is configured to drive the wafer bearing table to move up and down in the vertical direction and rotate along the axial direction of the wafer bearing table; the displacement sensor detection device is arranged below a substrate on the wafer bearing table and is configured to collect the warping amount of the substrate; the control system is configured to control the moving unit to drive the wafer bearing table to move up and down in the vertical direction according to the warpage amount of the substrate, so that automatic focusing is performed on the substrate in the exposure process.
Further, the displacement sensor detection device is configured to measure the warping amount of each acquisition point of the substrate in the rotation process according to a set acquisition frequency; the control system is configured to generate a position-warpage amount curve of the substrate according to the position coordinates of the acquisition points on the substrate and the warpage amount fitting corresponding to the acquisition points, and control the wafer bearing table to move up and down in the vertical direction according to the position-warpage amount curve and the exposure position of the substrate so as to automatically focus the substrate in the exposure process.
Furthermore, the automatic focusing device also comprises a vision acquisition system and a connecting support; the moving unit is also configured to drive the wafer bearing table to move horizontally in the horizontal direction; the vision acquisition system is arranged above a substrate on the wafer bearing table and is configured to acquire edge data of the substrate; the interface support is configured to remove the substrate from or place the substrate onto the stage; the control system is further configured to obtain the eccentricity of the substrate according to the edge data of the substrate, and control the motion unit to drive the wafer bearing table to horizontally move in the horizontal direction according to the eccentricity so as to center the substrate.
Furthermore, the motion unit comprises an X-direction motion mechanism, a Y-direction motion mechanism, a Z-direction motion mechanism and a rotary table, the Y-direction motion mechanism is arranged on the X-direction motion mechanism, the Z-direction motion mechanism is arranged on the Y-direction motion mechanism, the rotary table is arranged on the Z-direction motion mechanism, and the wafer bearing table is arranged on the rotary table; the X-direction movement mechanism is configured to drive the Y-direction movement mechanism to horizontally move along the X direction; the Y-direction movement mechanism is configured to drive the Z-direction movement mechanism to horizontally move along the Y direction; the Z-direction movement mechanism is configured to drive the rotating platform to do up-and-down lifting movement in the vertical direction; the rotating platform is configured to drive the wafer bearing platform to rotate along the axial direction of the wafer bearing platform.
Further, the wafer bearing table and/or the connection support are/is a vacuum chuck.
In order to solve the technical problem, the invention further provides an exposure device, which comprises the automatic focusing device.
The invention also provides a photoetching device comprising the exposure device.
The invention also provides an exposure method, which comprises the following steps:
s1: the moving unit drives the wafer bearing table to rotate, so that a notch of a substrate on the wafer bearing table rotates to a position right above the displacement sensor detection device, and the control system establishes a substrate coordinate system according to the position of the notch of the substrate;
s2: the motion unit continuously drives the wafer bearing table to rotate, and the displacement sensor detection device measures the warping amount of each acquisition point of the substrate in the rotation process according to a certain sampling frequency;
s3: the control system fits and generates a position-warpage amount curve of the substrate according to the position coordinates of the acquisition points on the substrate and the warpage amounts corresponding to the acquisition points;
s4: the moving unit drives the wafer bearing table to move so that the substrate on the wafer bearing table is positioned at the exposure station;
s5: and the exposure component starts to expose the substrate, and the control system controls the wafer bearing table to move up and down in the vertical direction according to the position-warpage amount curve and the exposure position of the substrate so as to automatically focus the substrate in the exposure process.
Further, before S1, centering the substrate may further include:
s001: the wafer bearing platform is connected with a sheet from external equipment to bear the substrate, and the moving unit drives the wafer bearing platform to horizontally move to a prealignment station;
s002: the motion unit drives the wafer bearing table to rotate for a circle, and the vision acquisition system acquires edge data of the substrate;
s003: the control system obtains the eccentricity of the substrate according to the edge data of the substrate;
s004: the moving unit drives the wafer bearing table to move up and down in the vertical direction, so that the wafer bearing table moves to a cross-connecting station;
s005: at the interface station, an interface support removes the substrate from the stage;
s006: the control system controls the motion unit to drive the wafer bearing platform to horizontally move in the horizontal direction according to the eccentric amount so as to compensate the eccentric amount of the substrate;
s007: the substrate is placed back on the wafer bearing table by the connection bracket;
s008: the moving unit drives the wafer bearing table to move up and down in the vertical direction, so that the wafer bearing table moves to the pre-alignment station to finish centering of the substrate.
Further, after the S008, the process of centering the substrate further includes:
s009: the motion unit drives the wafer bearing table to rotate for a circle, and the vision acquisition system acquires the edge data of the substrate after centering;
s010: the control system obtains the residual eccentric amount of the substrate after compensation according to the edge data of the substrate after centering, and judges whether the residual eccentric amount is within a set error;
s011: and if the residual eccentricity is within a set error, finishing centering the substrate, and otherwise, repeatedly executing S002-S010.
Further, before S4, the method further includes orienting the substrate, specifically including:
the moving unit drives the wafer bearing table to rotate, and the vision acquisition system acquires data of the notch position of the substrate;
the control system acquires the gap direction of the gap of the substrate according to the data of the gap position;
and the control system controls the movement unit to drive the wafer bearing table to rotate according to the gap direction of the gap of the substrate so as to enable the gap of the substrate to rotate to a set angle and complete the orientation of the substrate.
Further, the step of controlling, by the control system in S5, the wafer stage to perform vertical lifting motion in the vertical direction according to the position-warp amount curve and the exposure position of the substrate specifically includes:
the control system acquires position coordinates of an exposure position of the substrate in a substrate coordinate system;
the control system acquires the warpage amount corresponding to the exposure position according to the position-warpage amount curve and obtains the warpage variation of the exposure position area;
and the control system interpolates the warpage variation into a set point generator of a Z-direction movement mechanism of the movement unit so as to control the wafer bearing table to move up and down in the vertical direction.
Compared with the prior art, the automatic focusing device, the exposure device, the photoetching device and the exposure method provided by the invention have the following advantages:
through setting up the displacement sensor detection device who is used for detecting basement edge warpage volume specially, displacement sensor detection device can obtain the warpage volume of basement edge when the wafer bearing platform rotates a week, like this at the exposure in-process, can carry out the adjustment of vertical position to the basement in real time according to the warpage volume of exposure position, makes the exposure surface keep coincideing with projection objective focal plane as far as all the time to reach best exposure performance.
And the warping amount of each acquisition point of the substrate in the rotation process is measured by the displacement sensor detection device according to a certain acquisition frequency, a position-warping amount curve can be generated by fitting, so that the warping amount of each position of the peripheral part of the substrate is obtained, and when the substrate is exposed, the warping amount of the edge exposure position can be obtained by the position-warping amount curve, so that the control device controls the motion unit in real time according to the variation of the warping amount when the exposure position is exposed, the motion unit drives the wafer bearing platform to move up and down in the vertical direction to compensate the warping amount, and the exposure surface and the focal plane of the projection objective are kept coincident, thereby achieving the optimal exposure performance.
In addition, the invention optimizes the control strategy of the control system for controlling the motion unit, introduces variables which are easy to generate position deviation through feedback control, ensures that the motion of the motion unit control wafer bearing platform is more accurate and smooth, further ensures that the exposure surface of the substrate and the focal plane of the projection objective are kept coincident, and achieves the best exposure performance.
Drawings
FIG. 1 is a schematic structural diagram of an autofocus apparatus according to an embodiment of the present invention;
FIG. 2a is a schematic view of an edge exposure of a substrate according to an embodiment of the present invention;
FIG. 2b is a schematic diagram illustrating a substrate ring exposure method according to an embodiment of the present invention;
FIG. 2c is a schematic diagram of a substrate stage exposure method according to an embodiment of the present invention;
FIG. 2d is a schematic view of a linear exposure of a substrate according to one embodiment of the present invention;
FIG. 3 is a schematic flow chart illustrating an exposure method according to an embodiment of the present invention;
FIG. 4 is a schematic flow chart illustrating centering of a substrate according to one embodiment of the present invention;
FIG. 5 is a schematic view of a process for exposing an edge of a substrate according to one embodiment of the present invention;
FIG. 6 is a schematic diagram of an auto-focus control strategy for synchronizing the turntable and the Z-direction motion mechanism according to an embodiment of the present invention;
FIG. 7 is a schematic view of an S-wave warped silicon wafer according to an embodiment of the present invention;
FIG. 8a is a graph of the position-warpage amount of an S-wave warped silicon wafer in accordance with an embodiment of the present invention;
FIG. 8b is a graph showing the output of the Z-direction motion mechanism in accordance with one embodiment of the present invention.
Wherein the reference numbers are as follows:
100-a motion unit; 200-a wafer bearing platform; 300-displacement sensor detection means; 400-a substrate; 500-a vision acquisition system; 600-a handover scaffold; 700-an exposure assembly; 800-a control system; a 100X-X direction movement mechanism; a 100Y-Y motion mechanism; a 100Z-Z motion mechanism; 100R-rotating table.
Detailed Description
The following describes an autofocus apparatus, an exposure apparatus, a lithographic apparatus, and an exposure method according to the present invention in more detail with reference to the accompanying drawings and the detailed description. The advantages and features of the present invention will become more apparent from the following description.
It is to be noted that the drawings are in a very simplified form and are all used in a non-precise scale for the purpose of facilitating and distinctly aiding in the description of the embodiments of the present invention. To make the objects, features and advantages of the present invention comprehensible, reference is made to the accompanying drawings. It should be understood that the structures, ratios, sizes, and the like shown in the drawings and described in the specification are only used for matching with the disclosure of the specification, so as to be understood and read by those skilled in the art, and are not used to limit the implementation conditions of the present invention, so that the present invention has no technical significance, and any structural modification, ratio relationship change or size adjustment should still fall within the scope of the present invention without affecting the efficacy and the achievable purpose of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "axial", "radial", "circumferential", and the like, indicate orientations and positional relationships based on the orientations and positional relationships shown in the drawings, and are used merely for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the device or element so referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention.
In this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element. The methods described herein comprise a series of steps, and the order of such steps presented herein is not necessarily the only order in which such steps may be performed, and some of the described steps may be omitted and/or some other steps not described herein may be added to the methods.
The most common automatic focusing function in the current market is mainly applied to the photographing technology of cameras. The technology is mainly based on image processing, adopts a computer hardware technology and an image processing technology, processes each frame of image in real time through a series of digital images acquired by a lens and a CCD, judges whether focusing is correct or not and whether imaging is clear or not, gives signal feedback, controls the movement of the lens until the acquired image meets the use requirement, and finishes automatic focusing. Other manufacturers in the market currently have not applied this image capture technique to the field of edge exposure.
The core idea of the invention is to provide an automatic focusing device, an exposure device, a photoetching device and an exposure method, so as to solve the problem that in the prior art, no proper scheme exists for edge exposure of a large warping sheet, so that the exposure surface of the large warping sheet is kept to be overlapped with the focal plane of a projection objective as much as possible in the exposure process, and the optimal exposure performance is achieved.
In order to achieve the above idea, the present invention provides an automatic focusing apparatus for automatically focusing a substrate during an exposure process, as shown in fig. 1, comprising a motion unit 100, a stage 200, a displacement sensor detection apparatus 300, and a control system 800; the stage 200 is disposed on the moving unit 100, and the stage 200 is configured to carry the substrate 400; the moving unit 100 is configured to drive the wafer bearing table 200 to move up and down in the vertical direction and to rotate along the axial direction of the wafer bearing table 200; the displacement sensor detection device 300 is arranged below a substrate 400 on the wafer stage 200 and is configured to acquire the warping amount of the substrate 400; the control system 800 is configured to control the moving unit 100 to drive the stage 200 to move up and down in the vertical direction according to the warpage amount of the substrate 400, so as to perform auto-focusing on the substrate 400 during exposure. In the scheme of this embodiment, by providing the displacement sensor detection device 300 specially used for detecting the warpage amount of the edge of the substrate 400, the displacement sensor detection device 300 can obtain the change in the distance between the edge portion of the substrate 400 and the displacement sensor detection device 300 when the stage 200 rotates for one revolution, so as to obtain the warpage amount of the edge of the substrate 400, and thus, in the exposure process, the vertical position of the substrate 400 can be adjusted in real time according to the warpage amount of the exposure position, so that the exposure surface is kept coincident with the focal plane of the projection objective as far as possible, and the optimal exposure performance is achieved.
As an implementation of the present invention, the displacement sensor detecting device 300 is configured to measure the warping amount of each collecting point of the substrate 400 during the rotation process according to a set collecting frequency; the control system 800 is configured to fit and generate a position-warpage amount curve of the substrate 400 according to the position coordinates of the acquisition points on the substrate 400 and the warpage amount corresponding to the acquisition points, and control the wafer stage 200 to move up and down in the vertical direction according to the position-warpage amount curve and the exposure position of the substrate 400, so as to perform automatic focusing on the substrate 400 during exposure. In the solution of this embodiment, the warp amount of each position of the edge portion of the substrate 400 can be obtained by fitting a position-warp amount curve generated, and when the substrate 400 is exposed, the warp amount of the edge exposure position can be obtained from the position-warp amount curve, so that the control device controls the motion unit 100 in real time according to the change of the warp amount when the exposure position is exposed, so that the motion unit 100 drives the wafer stage 200 to perform vertical lifting motion to compensate the warp amount, and the exposure surface and the focal plane of the projection objective are kept coincident, thereby achieving the best exposure performance. In this embodiment, the sampling frequency of the displacement sensor detection apparatus 300 may be set according to the warpage change degree of the edge portion of the substrate 400, when the edge warpage change is large, the sampling frequency may be set to be shorter to obtain as much data as possible, so as to improve the accuracy of the fitted position-warpage amount curve, and when the edge warpage change is small, the sampling frequency may be set to be longer, so as to reduce the data processing amount and improve the efficiency without affecting the accuracy of the fitted position-warpage amount curve.
In addition, the setting position of the displacement sensor detection device 300 can be adjusted according to the size of the substrate 400 and the position to be exposed, the substrate in the invention can be a semiconductor silicon wafer or an LCD panel, for example, when the substrate 400 is a semiconductor silicon wafer with various sizes such as 6 inches, 8 inches, 12 inches, and the like, and the exposure is an edge exposure, the displacement sensor detection device 300 can be arranged right below the edge of the silicon wafer to collect the warping amount of the edge of the silicon wafer.
Furthermore, in order to achieve the centering and orienting function of the substrate 400, the autofocus apparatus of the present embodiment further includes a vision collecting system 500 and a cross-over bracket 600; the moving unit 100 is further configured to drive the wafer stage 200 to move horizontally in the horizontal direction; the vision acquisition system 500 is disposed above the substrate 400 on the stage 200, the vision acquisition system 500 is configured to acquire edge data of the substrate 400; the interface bracket 600 is configured to remove the substrate 400 from the stage 200 or place the substrate 400 onto the stage 200; the control system 800 is further configured to obtain an eccentric amount of the substrate 400 according to the edge data of the substrate 400, and control the motion unit 100 to drive the stage 200 to move horizontally according to the eccentric amount, so as to center the substrate 400. When the substrate is placed on the wafer bearing platform, the center of the substrate does not necessarily coincide with the center of the wafer bearing platform, and at the moment, the substrate needs to be centered to ensure the accurate exposure of the substrate subsequently. In this embodiment, the vision acquisition system 500 may acquire edge data of the substrate 400, for example, the edge shape and position of the substrate, the control system 800 may calculate the eccentricity between the substrate 400 and the center of the stage 200 according to the edge data, and by combining the information of the substrate size, the stage 200 position, the vision acquisition system 500 position, and the like, and after knowing the eccentricity, the control system 800 may control the interface bracket 600 to remove the substrate 400 from the stage 200 first, then the motion unit 100 is controlled to drive the wafer carrying platform 200 to make horizontal motion in the horizontal direction to compensate the eccentricity, and then controlling the interface bracket 600 to place the substrate 400 back on the stage 200, wherein the center of the substrate 400 coincides with the center of the stage 200, thereby completing the centering of the substrate 400.
Optionally, the moving unit 100 may include an X-direction moving mechanism 100X, Y, an X-direction moving mechanism 100Y, Z, a Z-direction moving mechanism 100Z and a rotating table 100R, the Y-direction moving mechanism 100Y is disposed on the X-direction moving mechanism 100X, the Z-direction moving mechanism 100Z is disposed on the Y-direction moving mechanism 100Y, the rotating table 100R is disposed on the Z-direction moving mechanism 100Z, and the wafer support 200 is disposed on the rotating table 100R; the X-direction moving mechanism 100X is configured to drive the Y-direction moving mechanism 100Y to move horizontally along the X-direction; the Y-direction moving mechanism 100Y is configured to drive the Z-direction moving mechanism 100Z to move horizontally along the Y direction; the Z-direction movement mechanism 100Z is configured to drive the rotating platform 100R to move up and down in the vertical direction; the rotating table 100R is configured to drive the wafer stage 200 to rotate along the axial direction of the wafer stage 200, so as to drive the substrate 400 to rotate. The X-direction movement mechanism 100X, the Y-direction movement mechanism 100Y, and the Z-direction movement mechanism 100Z may all adopt power guiding mechanisms commonly used in the prior art, for example, may be driving mechanisms such as stepping motors, and the invention is not limited thereto.
Preferably, the stage 200 and/or the interface bracket 600 in the embodiment of the present invention may be vacuum chucks. For example, the wafer stage 200 may be a large-warpage ceramic vacuum chuck having a shape matching the shape of the substrate 400, and the vacuum chuck may be used to implement a handover function with an external robot, and the wafer may be picked up from an external device in an active manner, that is, the robot lifts to pick and place the substrate, and the vacuum chuck only needs to switch on and off vacuum to complete the adsorption and release of the substrate. Meanwhile, the connection between the wafer stage 200 and the rotating stage 100R may be a detachable connection, and the size of the vacuum chuck of the wafer stage 200 may be changed according to the size of the substrate 400 to adapt to various substrates of different sizes. The interface support 600 may be a C-shaped vacuum chuck that can accommodate the suction of substrates of different sizes.
The invention also provides an exposure device which comprises the automatic focusing device. In addition, the exposure apparatus further includes an exposure component 700, the exposure component 700 is used for exposing the substrate 400, as shown in fig. 1, the illustrated exposure component 700 can implement edge exposure on the substrate 400, and the exposure mode can be edge exposure, or circular ring exposure, segmented exposure, linear exposure, and the like, as shown in fig. 2a to fig. 2 d. The automatic focusing device provided by the embodiment of the invention can be suitable for edge exposure, circular ring exposure, segmented exposure and linear exposure.
The invention also provides a photoetching device comprising the exposure device.
Based on the above device, the present invention further provides an exposure method, as shown in fig. 3, including the following steps:
s1: the moving unit 100 drives the wafer stage 200 to rotate, so that the notch of the substrate 400 on the wafer stage 200 rotates to a position right above the displacement sensor detection device 300, and the control system 800 establishes a substrate coordinate system according to the notch position of the substrate 400;
s2: the moving unit 100 continues to drive the wafer stage 200 to rotate, and the displacement sensor detection device 300 measures the warping amount of each collection point of the substrate 400 in the rotation process according to a certain sampling frequency;
s3: the control system 800 fits and generates a position-warpage amount curve of the substrate 400 according to the position coordinates of the acquisition points on the substrate 400 and the warpage amounts corresponding to the acquisition points;
s4: the moving unit 100 drives the stage 200 to move so that the substrate 400 on the stage 200 is located at an exposure station;
s5: the exposure assembly 700 starts to expose the substrate 400, and the control system 800 controls the stage 200 to move up and down in the vertical direction according to the position-warpage curve and the exposure position of the substrate 400, so as to automatically focus the substrate 400 during the exposure process.
When the exposure method of the embodiment is used to expose the edge of the substrate 400, the vertical position of the substrate 400 can be adjusted in real time according to the warpage amount, so that the exposure surface of the substrate 400 and the focal plane of the projection objective are kept coincident as much as possible, and the optimal exposure performance is achieved.
In the production of semiconductor devices, in order to ensure that a substrate can be exposed in a fixed posture, it is necessary to transfer the substrate to a workpiece stage with high centering and orientation accuracy during the transfer of the substrate. When the substrate is placed in the substrate groove, the position and the direction of the substrate are uncertain, so that before the substrate is conveyed to the workpiece table, the substrate is required to be pre-aligned with certain precision, the current position of the substrate is determined by measuring the circle center of the substrate, and the direction of the substrate is determined by measuring the direction of the gap of the substrate.
Preferably, in the exposure method, before the step S1, the method further includes centering the substrate, as shown in fig. 4, specifically including:
s001: the wafer bearing table 200 is used for receiving a wafer from an external device and bearing the substrate 400, and the moving unit 100 drives the wafer bearing table 200 to horizontally move to a pre-alignment station;
s002: the motion unit 100 drives the wafer stage 200 to rotate for a circle, and the vision acquisition system 500 acquires the edge data of the substrate 400;
s003: the control system 800 obtains the eccentricity of the substrate 400 according to the edge data of the substrate 400;
s004: the moving unit 100 drives the wafer bearing table 200 to move up and down in the vertical direction, so that the wafer bearing table 200 moves to an intersection station;
s005: at the interface station, interface support 600 removes the substrate 400 from the stage 200;
s006: the control system 800 controls the motion unit 100 to drive the wafer stage 200 to horizontally move in the horizontal direction according to the eccentricity amount, so as to compensate the eccentricity amount of the substrate 400;
s007: the interface bracket 600 returns the substrate 400 to the stage 200;
s008: the moving unit 100 drives the wafer bearing table 200 to move up and down in the vertical direction, so that the wafer bearing table 200 moves to the pre-alignment station to complete centering of the substrate 400.
Further, the centering result may be further verified to make the centering result more accurate, and after the S008, the centering the substrate 400 further includes:
s009: the moving unit 100 drives the wafer stage 200 to rotate for a circle, and the vision acquisition system 500 acquires edge data of the substrate 400 after centering;
s010: the control system 800 obtains the residual eccentric amount compensated by the substrate 400 according to the edge data of the substrate 400 after centering, and judges whether the residual eccentric amount is within a set error;
s011: and if the residual eccentricity is within the set error, finishing centering the substrate 400, and otherwise, repeatedly executing S002-S010.
Further, in the exposure method, before the step of S4, the method further includes orienting the substrate 400 to ensure that the initial position of exposure is accurate, and the orienting step specifically includes:
the movement unit 100 drives the wafer stage 200 to rotate, and the vision acquisition system 500 acquires data of the notch position of the substrate 400;
the control system 800 obtains the gap direction of the gap of the substrate 400 according to the data of the gap position;
the control system 800 controls the moving unit 100 to drive the stage 200 to rotate according to the notch direction of the notch of the substrate 400, so that the notch of the substrate 400 rotates to a set angle, and the orientation of the substrate is completed.
Preferably, in step S5 of the exposure method, when the exposure module 700 starts to expose the substrate 400, taking edge exposure as an example, as shown in fig. 5, it may specifically include the following operations: switching the diaphragm of the exposure assembly 700 to a specified view field size, the control system 800 firstly judging whether the substrate 400 is in a pre-alignment completion state, if so, starting a pre-exposure process, firstly performing illumination optimization, measuring the actual illumination of the current light source, and the control system 800 calculating an exposure parameter; then, the X-direction movement mechanism 100X and the Y-direction movement mechanism 100Y of the movement unit 100 move to the designated exposure station, the light source is turned on, and the rotation table 100Z rotates to the exposure start position to start uniform exposure.
In S5, the step of controlling the wafer stage 200 to move up and down in the vertical direction according to the position-warpage amount curve and the exposure position of the substrate 400 by the control system 800 specifically includes:
the control system 800 acquires position coordinates of the exposure position of the substrate 400 in a substrate coordinate system;
the control system 800 obtains the warpage amount corresponding to the exposure position according to the position-warpage amount curve, and obtains the warpage variation of the exposure position region;
the control system 800 interpolates the warpage variation into a set point generator of the Z-direction movement mechanism 100Z of the movement unit 100 to control the wafer stage 200 to move up and down in the vertical direction, so as to realize automatic adjustment of the vertical focal plane.
When the rotary table 100Z rotates to the exposure end position, the light source is turned off, and the X-direction moving mechanism 100X and the Y-direction moving mechanism 100Y take the substrate to move to the next position, waiting for the external device to take away the substrate after the exposure is completed. At this point, the edge exposure process of automatically adjusting the focal plane is completed. Similar methods are also used for circular exposure, segmented exposure and linear exposure of the substrate 400, and are not described in detail herein.
Further, in the above solution, the specific control strategy for the control system 800 to interpolate the warpage variation of the exposure position into the set point generator of the Z-direction movement mechanism 100Z of the movement unit 100 to control the wafer stage 200 to move up and down in the vertical direction can be summarized as follows: as shown in fig. 6, when the turntable 100R starts exposure movement with a piece, the Z-direction movement mechanism 100Z generates a set point input for each movement position according to the interpolation setting of the warpage variation, and a trajectory planning strategy is used, the Z-direction movement mechanism 100Z and the turntable 100R themselves may both include a PID controller and a measurement system, an output value of the PID controller may control an actuator of the Z-direction movement mechanism 100Z, the measurement system is used to feed back an actual rising or falling distance of the Z-direction movement mechanism at a vertical position in real time, an actual measurement value fed back by the measurement system in real time may be fed back to an input end of the PID controller, the PID controller adjusts an output value in real time according to the actual rising or falling distance fed back and the set point input, so that the movement value of the Z-direction movement mechanism is more accurate, and thus real-time data is fed back to the PID controller by the measurement system, tracking errors can be reduced to form accurate closed-loop feedback control.
In addition, as shown in fig. 6, during the movement of the rotary table 100R and the Z-direction moving mechanism 100Z, especially during the acceleration and deceleration sections of the movement, large position errors are generated, and in order to eliminate the position errors, the acceleration trajectory planned by the set point generator can be introduced into the PID controller as feed-forward compensation, so as to further reduce the position errors caused by acceleration or deceleration, and further smooth the adjustment process of the entire vertical focal plane.
In order to verify the effect of the control strategy, the present embodiment takes the most typical S-wave-shaped warped silicon wafer as an example, and performs actual exposure control by using the exposure method and the control strategy, as shown in fig. 7, which is a schematic diagram of the S-wave-shaped warped silicon wafer, at this time, the warping curve of the silicon wafer is simulated into a sine wave form, as shown in fig. 8 a. The synchronous automatic control performance of the Z-direction movement mechanism 100Z can be confirmed by the performance curve of the synchronous focusing movement of the Z-direction movement mechanism 100Z during the exposure process of the rotating table 100R with the sheet, as shown in fig. 8b, the output curve of the Z-direction movement mechanism 100Z can completely track the change of the input set point, the maximum error value is 58um, and the control requirement of the vertical focal plane is completely met.
In summary, compared with the prior art, the automatic focusing apparatus, the exposure apparatus, the lithography apparatus and the exposure method provided by the invention have the following advantages:
through setting up the displacement sensor detection device who is used for detecting basement edge warpage volume specially, displacement sensor detection device can obtain the warpage volume of basement edge when the slide holder rotates a week, like this in the exposure process, can carry out the adjustment of vertical position to the basement in real time according to the warpage volume of exposure position, makes the exposure surface keep coincideing with projection objective focal plane all the time as far as to reach best exposure performance.
And the warping amount of each acquisition point of the substrate in the rotation process is measured by the displacement sensor detection device according to a certain acquisition frequency, a position-warping amount curve can be generated by fitting, so that the warping amount of each position of the peripheral part of the substrate is obtained, and when the substrate is exposed, the warping amount of the edge exposure position can be obtained by the position-warping amount curve, so that the control device controls the motion unit in real time according to the variation of the warping amount when the exposure position is exposed, the motion unit drives the wafer bearing platform to move up and down in the vertical direction to compensate the warping amount, and the exposure surface and the focal plane of the projection objective are kept coincident, thereby achieving the optimal exposure performance.
In addition, the invention optimizes the control strategy of the control system for controlling the motion unit, introduces variables which are easy to generate position deviation through feedback control, ensures that the motion of the motion unit control wafer bearing platform is more accurate and smooth, further ensures that the exposure surface of the substrate and the focal plane of the projection objective are kept coincident, and achieves the best exposure performance.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims. It will be apparent to those skilled in the art that various changes and modifications may be made in the invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (12)
1. An automatic focusing device is used for automatically focusing a substrate in an exposure process and is characterized by comprising a motion unit, a wafer bearing table, a displacement sensor detection device and a control system;
the wafer bearing platform is arranged on the moving unit and is configured to bear the substrate;
the moving unit is configured to drive the wafer bearing platform to do up-and-down lifting movement in the vertical direction and to do rotating movement along the axial direction of the wafer bearing platform;
the displacement sensor detection device is arranged below a substrate on the wafer bearing table and is configured to collect the warping amount of the substrate;
the control system is configured to control the moving unit to drive the wafer bearing table to move up and down in the vertical direction according to the warpage amount of the substrate, so that automatic focusing is performed on the substrate in the exposure process.
2. An autofocus apparatus according to claim 1, wherein the displacement sensor detection device is configured to measure the amount of warping of the substrate at each acquisition point during rotation at a set acquisition frequency;
the control system is configured to generate a position-warpage amount curve of the substrate according to the position coordinates of the acquisition points on the substrate and the warpage amount fitting corresponding to the acquisition points, and control the wafer bearing table to move up and down in the vertical direction according to the position-warpage amount curve and the exposure position of the substrate so as to automatically focus the substrate in the exposure process.
3. The autofocus apparatus of claim 1, further comprising a vision acquisition system and an interface mount;
the moving unit is also configured to drive the wafer bearing table to move horizontally in the horizontal direction;
the vision acquisition system is arranged above a substrate on the wafer bearing table and is configured to acquire edge data of the substrate;
the interface support is configured to remove the substrate from or place the substrate onto the stage;
the control system is further configured to obtain the eccentricity of the substrate according to the edge data of the substrate, and control the motion unit to drive the wafer bearing table to horizontally move in the horizontal direction according to the eccentricity so as to center the substrate.
4. An autofocus apparatus according to claim 3, wherein the movement unit includes an X-direction movement mechanism, a Y-direction movement mechanism, a Z-direction movement mechanism, and a rotary table,
the Y-direction movement mechanism is arranged on the X-direction movement mechanism, the Z-direction movement mechanism is arranged on the Y-direction movement mechanism, the rotating table is arranged on the Z-direction movement mechanism, and the wafer bearing table is arranged on the rotating table;
the X-direction movement mechanism is configured to drive the Y-direction movement mechanism to horizontally move along the X direction;
the Y-direction movement mechanism is configured to drive the Z-direction movement mechanism to horizontally move along the Y direction;
the Z-direction movement mechanism is configured to drive the rotating platform to do up-and-down lifting movement in the vertical direction;
the rotating platform is configured to drive the wafer bearing platform to rotate along the axial direction of the wafer bearing platform.
5. An autofocus apparatus according to claim 3, wherein the stage and/or the interface support is a vacuum chuck.
6. An exposure apparatus comprising the autofocus apparatus according to any one of claims 1 to 5.
7. A lithographic apparatus comprising the exposure apparatus of claim 6.
8. An exposure method, comprising the steps of:
s1: the moving unit drives the wafer bearing table to rotate, so that a notch of a substrate on the wafer bearing table rotates to a position right above the displacement sensor detection device, and the control system establishes a substrate coordinate system according to the position of the notch of the substrate;
s2: the motion unit continuously drives the wafer bearing table to rotate, and the displacement sensor detection device measures the warping amount of each acquisition point of the substrate in the rotation process according to a certain sampling frequency;
s3: the control system fits and generates a position-warpage amount curve of the substrate according to the position coordinates of the acquisition points on the substrate and the warpage amounts corresponding to the acquisition points;
s4: the moving unit drives the wafer bearing table to move so that the substrate on the wafer bearing table is positioned at the exposure station;
s5: and the exposure component starts to expose the substrate, and the control system controls the wafer bearing table to move up and down in the vertical direction according to the position-warpage amount curve and the exposure position of the substrate so as to automatically focus the substrate in the exposure process.
9. The exposure method according to claim 8, further comprising, before the step S1, centering the substrate, specifically comprising:
s001: the wafer bearing table is used for receiving the wafer from external equipment and bearing the substrate, and the moving unit drives the wafer bearing table to horizontally move to a pre-alignment station;
s002: the motion unit drives the wafer bearing table to rotate for a circle, and the vision acquisition system acquires edge data of the substrate;
s003: the control system obtains the eccentricity of the substrate according to the edge data of the substrate;
s004: the moving unit drives the wafer bearing table to move up and down in the vertical direction, so that the wafer bearing table moves to a cross-connecting station;
s005: at the transfer station, a transfer support takes the substrate from the wafer support;
s006: the control system controls the motion unit to drive the wafer bearing platform to horizontally move in the horizontal direction according to the eccentric amount so as to compensate the eccentric amount of the substrate;
s007: the substrate is placed back on the wafer bearing table by the connection bracket;
s008: the moving unit drives the wafer bearing table to move up and down in the vertical direction, so that the wafer bearing table moves to the pre-alignment station to finish centering of the substrate.
10. The exposure method according to claim 8, wherein after the step S008, the step of centering the substrate further comprises:
s009: the motion unit drives the wafer bearing table to rotate for a circle, and the vision acquisition system acquires the edge data of the substrate after centering;
s010: the control system obtains the residual eccentric amount of the substrate after compensation according to the edge data of the substrate after centering, and judges whether the residual eccentric amount is within a set error;
s011: and if the residual eccentricity is within a set error, finishing centering the substrate, and otherwise, repeatedly executing S002-S010.
11. The exposure method according to claim 8, further comprising, before the step S4, orienting the substrate, specifically comprising:
the moving unit drives the wafer bearing table to rotate, and the vision acquisition system acquires data of the notch position of the substrate;
the control system acquires the gap direction of the gap of the substrate according to the data of the gap position;
and the control system controls the movement unit to drive the wafer bearing table to rotate according to the gap direction of the gap of the substrate so as to enable the gap of the substrate to rotate to a set angle and complete the orientation of the substrate.
12. The exposure method according to claim 8, wherein the step of controlling the stage to move up and down in the vertical direction by the control system according to the position-warp curve and the exposure position of the substrate in S5 specifically comprises:
the control system acquires position coordinates of an exposure position of the substrate in a substrate coordinate system;
the control system acquires the warpage amount corresponding to the exposure position according to the position-warpage amount curve and obtains the warpage variation of the exposure position area;
and the control system interpolates the warpage variation into a set point generator of a Z-direction movement mechanism of the movement unit so as to control the wafer bearing table to move up and down in the vertical direction.
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