CN100342496C - 能防止污染并提高膜生长速率的化学气相沉积方法和设备 - Google Patents
能防止污染并提高膜生长速率的化学气相沉积方法和设备 Download PDFInfo
- Publication number
- CN100342496C CN100342496C CNB028203909A CN02820390A CN100342496C CN 100342496 C CN100342496 C CN 100342496C CN B028203909 A CNB028203909 A CN B028203909A CN 02820390 A CN02820390 A CN 02820390A CN 100342496 C CN100342496 C CN 100342496C
- Authority
- CN
- China
- Prior art keywords
- reacting gas
- restraint device
- source material
- gas
- purge gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (17)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR2001/64337 | 2001-10-18 | ||
KR1020010064337 | 2001-10-18 | ||
KR10-2002-0006957A KR100450173B1 (ko) | 2001-10-18 | 2002-02-07 | 확산억제가스흐름과 확산억제수단을 이용한 화학기상증착방법 및 그 장치 |
KR2002/6957 | 2002-02-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1572016A CN1572016A (zh) | 2005-01-26 |
CN100342496C true CN100342496C (zh) | 2007-10-10 |
Family
ID=26639406
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028203909A Expired - Lifetime CN100342496C (zh) | 2001-10-18 | 2002-10-04 | 能防止污染并提高膜生长速率的化学气相沉积方法和设备 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7156921B2 (zh) |
EP (1) | EP1454346B1 (zh) |
JP (1) | JP4387190B2 (zh) |
CN (1) | CN100342496C (zh) |
WO (1) | WO2003034477A1 (zh) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6890596B2 (en) * | 2002-08-15 | 2005-05-10 | Micron Technology, Inc. | Deposition methods |
US7052546B1 (en) * | 2003-08-28 | 2006-05-30 | Cape Simulations, Inc. | High-purity crystal growth |
KR100513920B1 (ko) * | 2003-10-31 | 2005-09-08 | 주식회사 시스넥스 | 화학기상증착 반응기 |
US8211235B2 (en) * | 2005-03-04 | 2012-07-03 | Picosun Oy | Apparatuses and methods for deposition of material on surfaces |
KR100731164B1 (ko) * | 2005-05-19 | 2007-06-20 | 주식회사 피에조닉스 | 샤워헤드를 구비한 화학기상 증착 방법 및 장치 |
KR100849929B1 (ko) | 2006-09-16 | 2008-08-26 | 주식회사 피에조닉스 | 반응 기체의 분사 속도를 적극적으로 조절하는 샤워헤드를구비한 화학기상 증착 방법 및 장치 |
RU2465372C1 (ru) * | 2011-05-12 | 2012-10-27 | Билал Аругович Билалов | Устройство для получения тонких пленок нитридных соединений |
US9499905B2 (en) * | 2011-07-22 | 2016-11-22 | Applied Materials, Inc. | Methods and apparatus for the deposition of materials on a substrate |
CN103388132B (zh) * | 2012-05-11 | 2015-11-25 | 中微半导体设备(上海)有限公司 | 气体喷淋头、其制造方法及薄膜生长反应器 |
US9388494B2 (en) | 2012-06-25 | 2016-07-12 | Novellus Systems, Inc. | Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region |
US9399228B2 (en) | 2013-02-06 | 2016-07-26 | Novellus Systems, Inc. | Method and apparatus for purging and plasma suppression in a process chamber |
GB2513300B (en) | 2013-04-04 | 2017-10-11 | Edwards Ltd | Vacuum pumping and abatement system |
US20160362782A1 (en) * | 2015-06-15 | 2016-12-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gas dispenser and deposition apparatus using the same |
US9758868B1 (en) | 2016-03-10 | 2017-09-12 | Lam Research Corporation | Plasma suppression behind a showerhead through the use of increased pressure |
US10446420B2 (en) * | 2016-08-19 | 2019-10-15 | Applied Materials, Inc. | Upper cone for epitaxy chamber |
US10604841B2 (en) | 2016-12-14 | 2020-03-31 | Lam Research Corporation | Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition |
KR20200087267A (ko) * | 2017-12-08 | 2020-07-20 | 램 리써치 코포레이션 | 리모트 플라즈마 막 증착을 인에이블하도록 다운스트림 챔버로 라디칼 및 전구체 가스를 전달하기 위해 개선된 홀 패턴을 갖는 통합된 샤워헤드 |
CN115011948A (zh) * | 2022-08-05 | 2022-09-06 | 拓荆科技(北京)有限公司 | 改善薄膜颗粒度装置及其气体输送方法 |
CN116575012A (zh) * | 2023-05-16 | 2023-08-11 | 无锡金源半导体科技有限公司 | 沉积腔室及具有该沉积腔室的薄膜沉积设备 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000054137A (ja) * | 1998-08-06 | 2000-02-22 | Anelva Corp | 基板支持機構のパージガス導入機構 |
US6059985A (en) * | 1996-04-12 | 2000-05-09 | Anelva Corporation | Method of processing a substrate and apparatus for the method |
US6085690A (en) * | 1996-11-15 | 2000-07-11 | Anelva Corporation | Chemical vapor deposition apparatus |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6034010A (ja) | 1983-08-05 | 1985-02-21 | Agency Of Ind Science & Technol | 反応管 |
US4661199A (en) * | 1985-11-12 | 1987-04-28 | Rca Corporation | Method to inhibit autodoping in epitaxial layers from heavily doped substrates in CVD processing |
DE3772659D1 (de) * | 1986-06-28 | 1991-10-10 | Ulvac Corp | Verfahren und vorrichtung zum beschichten unter anwendung einer cvd-beschichtungstechnik. |
US4684542A (en) * | 1986-08-11 | 1987-08-04 | International Business Machines Corporation | Low pressure chemical vapor deposition of tungsten silicide |
US4753192A (en) * | 1987-01-08 | 1988-06-28 | Btu Engineering Corporation | Movable core fast cool-down furnace |
JPH01187809A (ja) * | 1988-01-22 | 1989-07-27 | Hitachi Ltd | 半導体装置の製造方法 |
JPH01286306A (ja) * | 1988-05-12 | 1989-11-17 | Mitsubishi Electric Corp | 結晶成長装置 |
US5273588A (en) * | 1992-06-15 | 1993-12-28 | Materials Research Corporation | Semiconductor wafer processing CVD reactor apparatus comprising contoured electrode gas directing means |
JPH06163439A (ja) * | 1992-11-16 | 1994-06-10 | Shin Etsu Chem Co Ltd | 半導体拡散炉用ボート及びその製造方法 |
US5439524A (en) * | 1993-04-05 | 1995-08-08 | Vlsi Technology, Inc. | Plasma processing apparatus |
TW293983B (zh) * | 1993-12-17 | 1996-12-21 | Tokyo Electron Co Ltd | |
US6033480A (en) * | 1994-02-23 | 2000-03-07 | Applied Materials, Inc. | Wafer edge deposition elimination |
US5540800A (en) * | 1994-06-23 | 1996-07-30 | Applied Materials, Inc. | Inductively coupled high density plasma reactor for plasma assisted materials processing |
JP3890634B2 (ja) * | 1995-09-19 | 2007-03-07 | セイコーエプソン株式会社 | 圧電体薄膜素子及びインクジェット式記録ヘッド |
JPH1064847A (ja) * | 1996-07-16 | 1998-03-06 | Applied Materials Inc | タングステン材料の成膜方法、サセプタ及び成膜装置 |
KR100225592B1 (ko) | 1996-07-25 | 1999-10-15 | 이종구 | 운반기체가 필요없는 금속유기화합물의 화학기상 증착방법 및 장치 |
KR100230182B1 (ko) * | 1996-12-26 | 1999-11-15 | 이경수 | 반도체소자의 박막증착시스템 및 박막증착방법 |
US5814561A (en) * | 1997-02-14 | 1998-09-29 | Jackson; Paul D. | Substrate carrier having a streamlined shape and method for thin film formation |
JPH1167675A (ja) * | 1997-08-21 | 1999-03-09 | Toshiba Ceramics Co Ltd | 高速回転気相薄膜形成装置及びそれを用いる高速回転気相薄膜形成方法 |
JPH11200035A (ja) * | 1998-01-19 | 1999-07-27 | Anelva Corp | スパッタ化学蒸着複合装置 |
JPH11240794A (ja) * | 1998-02-27 | 1999-09-07 | Super Silicon Kenkyusho:Kk | エピタキシャル成長装置 |
US6301434B1 (en) * | 1998-03-23 | 2001-10-09 | Mattson Technology, Inc. | Apparatus and method for CVD and thermal processing of semiconductor substrates |
US6096135A (en) * | 1998-07-21 | 2000-08-01 | Applied Materials, Inc. | Method and apparatus for reducing contamination of a substrate in a substrate processing system |
DE19851824C2 (de) * | 1998-11-10 | 2002-04-04 | Infineon Technologies Ag | CVD-Reaktor |
US6444039B1 (en) * | 2000-03-07 | 2002-09-03 | Simplus Systems Corporation | Three-dimensional showerhead apparatus |
JP2001250783A (ja) * | 2000-03-08 | 2001-09-14 | Japan Pionics Co Ltd | 気相成長装置及び気相成長方法 |
KR100731164B1 (ko) * | 2005-05-19 | 2007-06-20 | 주식회사 피에조닉스 | 샤워헤드를 구비한 화학기상 증착 방법 및 장치 |
-
2002
- 2002-10-04 CN CNB028203909A patent/CN100342496C/zh not_active Expired - Lifetime
- 2002-10-04 WO PCT/KR2002/001845 patent/WO2003034477A1/en active Application Filing
- 2002-10-04 JP JP2003537108A patent/JP4387190B2/ja not_active Expired - Lifetime
- 2002-10-04 EP EP02788864A patent/EP1454346B1/en not_active Expired - Lifetime
- 2002-10-09 US US10/267,208 patent/US7156921B2/en not_active Expired - Lifetime
-
2006
- 2006-11-21 US US11/602,523 patent/US7485339B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6059985A (en) * | 1996-04-12 | 2000-05-09 | Anelva Corporation | Method of processing a substrate and apparatus for the method |
US6085690A (en) * | 1996-11-15 | 2000-07-11 | Anelva Corporation | Chemical vapor deposition apparatus |
JP2000054137A (ja) * | 1998-08-06 | 2000-02-22 | Anelva Corp | 基板支持機構のパージガス導入機構 |
Also Published As
Publication number | Publication date |
---|---|
CN1572016A (zh) | 2005-01-26 |
WO2003034477A1 (en) | 2003-04-24 |
JP2005506448A (ja) | 2005-03-03 |
US20030077388A1 (en) | 2003-04-24 |
EP1454346B1 (en) | 2012-01-04 |
JP4387190B2 (ja) | 2009-12-16 |
EP1454346A4 (en) | 2008-03-05 |
US7485339B2 (en) | 2009-02-03 |
US20070065599A1 (en) | 2007-03-22 |
US7156921B2 (en) | 2007-01-02 |
EP1454346A1 (en) | 2004-09-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100342496C (zh) | 能防止污染并提高膜生长速率的化学气相沉积方法和设备 | |
EP1452626B9 (en) | Mixer, and device and method for manufacturing thin film | |
JP6281958B2 (ja) | カスタマイズ可能な流れの注入を伴うエピタキシャルチャンバ | |
US7479303B2 (en) | Method for chemical vapor deposition (CVD) with showerhead and method thereof | |
CN1788334A (zh) | 成膜装置 | |
CN101517704A (zh) | 使用主动调节反应性气体的注入速度的喷头的化学气相沉积设备及其方法 | |
CN1584110A (zh) | 薄膜制造装置以及制造方法 | |
CN106711065B (zh) | 衬底处理装置及使用所述衬底处理装置的衬底处理方法 | |
CN107546101A (zh) | 一种外延生长方法 | |
JP2021110041A (ja) | シャワーヘッドアセンブリおよび構成要素 | |
JP2003239072A (ja) | 成膜装置 | |
KR101443665B1 (ko) | 수직 흐름 회전 디스크 리액터를 위한 밀도 매칭 알킬 압출 흐름 | |
JP2008133545A (ja) | 薄膜形成装置及び薄膜形成方法 | |
CN212175035U (zh) | 一种用于化学气相沉积设备的气体喷淋头组件 | |
KR200263699Y1 (ko) | 확산억제가스흐름과 확산억제수단을 이용한 화학기상증착장치 | |
KR100450173B1 (ko) | 확산억제가스흐름과 확산억제수단을 이용한 화학기상증착방법 및 그 장치 | |
CN1242093C (zh) | 一种用于气相沉积的水平式反应器结构 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: PIEZONICS CO., LTD. Free format text: FORMER OWNER: BIAN ZHEZHU Effective date: 20120509 Owner name: KOREA IND TECH INST Effective date: 20120509 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20120509 Address after: Chungnam, South Korea Co-patentee after: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY Patentee after: PIEZONICS Co.,Ltd. Address before: Seoul, South Kerean Patentee before: Bian Zhezhu |
|
CX01 | Expiry of patent term |
Granted publication date: 20071010 |
|
CX01 | Expiry of patent term |