CN100342261C - 曝光装置 - Google Patents
曝光装置 Download PDFInfo
- Publication number
- CN100342261C CN100342261C CNB2004100317910A CN200410031791A CN100342261C CN 100342261 C CN100342261 C CN 100342261C CN B2004100317910 A CNB2004100317910 A CN B2004100317910A CN 200410031791 A CN200410031791 A CN 200410031791A CN 100342261 C CN100342261 C CN 100342261C
- Authority
- CN
- China
- Prior art keywords
- mentioned
- play amount
- pixel portion
- microlens array
- light beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003287 optical effect Effects 0.000 claims description 48
- 238000005192 partition Methods 0.000 claims description 36
- 238000003384 imaging method Methods 0.000 claims description 28
- 238000001514 detection method Methods 0.000 claims description 20
- 238000004364 calculation method Methods 0.000 claims description 10
- 238000012360 testing method Methods 0.000 claims description 10
- 238000005286 illumination Methods 0.000 claims description 2
- 101100277916 Caenorhabditis elegans dmd-10 gene Proteins 0.000 abstract description 26
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000012937 correction Methods 0.000 description 7
- 101100277917 Caenorhabditis elegans dmd-3 gene Proteins 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000003306 harvesting Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B27/00—Photographic printing apparatus
- G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
- G03B27/52—Details
- G03B27/54—Lamp housings; Illuminating means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
- G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
Abstract
Description
Claims (8)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003083608 | 2003-03-25 | ||
JP2003083608A JP4057937B2 (ja) | 2003-03-25 | 2003-03-25 | 露光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1532577A CN1532577A (zh) | 2004-09-29 |
CN100342261C true CN100342261C (zh) | 2007-10-10 |
Family
ID=32985058
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100317910A Expired - Lifetime CN100342261C (zh) | 2003-03-25 | 2004-03-25 | 曝光装置 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7102730B2 (zh) |
JP (1) | JP4057937B2 (zh) |
KR (1) | KR101051396B1 (zh) |
CN (1) | CN100342261C (zh) |
TW (1) | TWI360027B (zh) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1042152C (zh) * | 1995-03-14 | 1999-02-17 | 姚启文 | 一种制作防伪标志用织物的方法 |
US7061591B2 (en) * | 2003-05-30 | 2006-06-13 | Asml Holding N.V. | Maskless lithography systems and methods utilizing spatial light modulator arrays |
US20050243295A1 (en) * | 2004-04-30 | 2005-11-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing |
US7116404B2 (en) * | 2004-06-30 | 2006-10-03 | Asml Netherlands B.V | Lithographic apparatus and device manufacturing method |
US7274029B2 (en) * | 2004-12-28 | 2007-09-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4613098B2 (ja) * | 2005-05-30 | 2011-01-12 | 株式会社ブイ・テクノロジー | 露光装置 |
US7233384B2 (en) * | 2005-06-13 | 2007-06-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method, and device manufactured thereby for calibrating an imaging system with a sensor |
JP2007003829A (ja) * | 2005-06-23 | 2007-01-11 | Fujifilm Holdings Corp | 画像露光装置 |
US7944465B2 (en) * | 2006-01-13 | 2011-05-17 | Zecotek Display Systems Pte. Ltd. | Apparatus and system for reproducing 3-dimensional images |
DE102006007764A1 (de) * | 2006-02-20 | 2007-08-23 | Sick Ag | Optoelektronische Vorrichtung und Verfahren zu deren Betrieb |
KR100762396B1 (ko) | 2006-05-16 | 2007-10-02 | 엘지전자 주식회사 | 마스크리스 노광기용 디엠디 정렬 방법 |
US8139199B2 (en) * | 2007-04-02 | 2012-03-20 | Nikon Corporation | Exposure method, exposure apparatus, light converging pattern formation member, mask, and device manufacturing method |
US8363209B2 (en) * | 2007-07-10 | 2013-01-29 | Lg Electronics Inc. | Method and apparatus to adjust misalignment of the maskless exposure apparatus |
KR101347410B1 (ko) * | 2007-10-02 | 2014-01-02 | 엘지전자 주식회사 | 마스크리스 노광 장치와 방법 |
NL1036331A1 (nl) * | 2007-12-27 | 2009-06-30 | Asml Netherlands Bv | Metrology apparatus, lithographic apparatus and method of measuring a property of a substrate. |
JP5190630B2 (ja) * | 2009-02-26 | 2013-04-24 | 株式会社ブイ・テクノロジー | 露光装置 |
JP5357617B2 (ja) * | 2009-04-22 | 2013-12-04 | 株式会社オーク製作所 | 露光装置 |
JP5326792B2 (ja) * | 2009-05-14 | 2013-10-30 | ソニー株式会社 | 静脈撮像装置、位置ズレ補間方法およびプログラム |
WO2013161944A1 (ja) * | 2012-04-25 | 2013-10-31 | 株式会社ニコン | 焦点検出装置、焦点調節装置およびカメラ |
US9182606B2 (en) | 2014-01-29 | 2015-11-10 | Emine Goulanian | Rear-projection autostereoscopic 3D display system |
US9182605B2 (en) | 2014-01-29 | 2015-11-10 | Emine Goulanian | Front-projection autostereoscopic 3D display system |
JP2016188923A (ja) * | 2015-03-30 | 2016-11-04 | ウシオ電機株式会社 | 露光装置及び露光方法 |
WO2016158957A1 (ja) * | 2015-03-30 | 2016-10-06 | 株式会社ニコン | 撮像装置、マルチレンズカメラおよび撮像装置の製造方法 |
JP6717719B2 (ja) * | 2016-09-09 | 2020-07-01 | 株式会社Screenホールディングス | パターン露光装置、露光ヘッドおよびパターン露光方法 |
KR20180068228A (ko) * | 2016-12-13 | 2018-06-21 | 삼성전자주식회사 | 위치 조정 유닛 및 이를 포함하는 마스크리스 노광 장치 |
CN110398880B (zh) * | 2018-04-24 | 2021-09-28 | 台湾积体电路制造股份有限公司 | 曝光设备及曝光方法 |
JP7082927B2 (ja) * | 2018-08-27 | 2022-06-09 | 株式会社Screenホールディングス | 露光装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6133986A (en) * | 1996-02-28 | 2000-10-17 | Johnson; Kenneth C. | Microlens scanner for microlithography and wide-field confocal microscopy |
US6424404B1 (en) * | 1999-01-11 | 2002-07-23 | Kenneth C. Johnson | Multi-stage microlens array |
CN1379866A (zh) * | 1999-11-17 | 2002-11-13 | 微激光系统公司 | 在微刻写入中的射束定位 |
US6489984B1 (en) * | 1998-12-29 | 2002-12-03 | Kenneth C. Johnson | Pixel cross talk suppression in digital microprinters |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6628390B1 (en) * | 2000-01-24 | 2003-09-30 | Kenneth C. Johnson | Wafer alignment sensor using a phase-shifted microlens array |
US6493867B1 (en) * | 2000-08-08 | 2002-12-10 | Ball Semiconductor, Inc. | Digital photolithography system for making smooth diagonal components |
JP2002277851A (ja) * | 2001-03-21 | 2002-09-25 | Hamamatsu Photonics Kk | 空間光変調装置 |
JP3963080B2 (ja) * | 2001-04-13 | 2007-08-22 | セイコーエプソン株式会社 | 電気光学装置の製造方法および電気光学装置 |
JP4420672B2 (ja) * | 2001-10-25 | 2010-02-24 | 浜松ホトニクス株式会社 | 位相変調装置及び位相変調方法 |
EP1369731A3 (en) * | 2002-06-07 | 2008-02-13 | FUJIFILM Corporation | Exposure head and exposure apparatus |
KR101049608B1 (ko) * | 2002-08-24 | 2011-07-14 | 매스크리스 리소그래피 인코퍼레이티드 | 연속적인 직접-기록 광 리쏘그래피 장치 및 방법 |
-
2003
- 2003-03-25 JP JP2003083608A patent/JP4057937B2/ja not_active Expired - Lifetime
-
2004
- 2004-03-24 US US10/807,310 patent/US7102730B2/en not_active Expired - Lifetime
- 2004-03-24 TW TW093107942A patent/TWI360027B/zh active
- 2004-03-24 KR KR1020040019860A patent/KR101051396B1/ko active IP Right Grant
- 2004-03-25 CN CNB2004100317910A patent/CN100342261C/zh not_active Expired - Lifetime
-
2006
- 2006-03-22 US US11/385,694 patent/US7184125B2/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6133986A (en) * | 1996-02-28 | 2000-10-17 | Johnson; Kenneth C. | Microlens scanner for microlithography and wide-field confocal microscopy |
US6489984B1 (en) * | 1998-12-29 | 2002-12-03 | Kenneth C. Johnson | Pixel cross talk suppression in digital microprinters |
US6424404B1 (en) * | 1999-01-11 | 2002-07-23 | Kenneth C. Johnson | Multi-stage microlens array |
CN1379866A (zh) * | 1999-11-17 | 2002-11-13 | 微激光系统公司 | 在微刻写入中的射束定位 |
Also Published As
Publication number | Publication date |
---|---|
US7184125B2 (en) | 2007-02-27 |
TW200502708A (en) | 2005-01-16 |
CN1532577A (zh) | 2004-09-29 |
KR20040084744A (ko) | 2004-10-06 |
JP2004296531A (ja) | 2004-10-21 |
US20040189970A1 (en) | 2004-09-30 |
TWI360027B (en) | 2012-03-11 |
US7102730B2 (en) | 2006-09-05 |
US20060158635A1 (en) | 2006-07-20 |
JP4057937B2 (ja) | 2008-03-05 |
KR101051396B1 (ko) | 2011-07-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100342261C (zh) | 曝光装置 | |
CN1230873C (zh) | 位置偏移光学测定装置的调整装置和调整方法 | |
US20090046262A1 (en) | Exposure apparatus and exposure method | |
CN101943570B (zh) | 三维形状测量设备 | |
CN1602421A (zh) | 点格栅阵列成像系统 | |
CN100345434C (zh) | 基板检查装置 | |
JP2005266779A (ja) | 露光装置及び方法 | |
TW201716876A (zh) | 光源裝置、曝光裝置及光源控制方法 | |
JP4533785B2 (ja) | アライメントセンサの位置校正方法、基準パターン校正方法、露光位置補正方法、校正用パターン及びアライメント装置 | |
US20120127463A1 (en) | Inspection apparatus | |
US20090251676A1 (en) | Exposure apparatus and exposure method | |
CN1469449A (zh) | 标记位置检测装置和标记位置检测方法 | |
JP2007271867A (ja) | 描画位置測定方法および装置並びに描画方法および装置 | |
CN1150660A (zh) | 目的物位置和斜度控制装置 | |
JP5000948B2 (ja) | 描画位置測定方法および装置並びに描画方法および装置 | |
JP2006234921A (ja) | 露光装置および露光方法 | |
TWI246848B (en) | Image formation device | |
CN105763817A (zh) | 一种影像擦除装置、方法以及影像扫描系统 | |
CN100483258C (zh) | 曝光图案形成方法 | |
JP2005294373A (ja) | マルチビーム露光装置 | |
CN116169061A (zh) | 一种晶圆侦测模组及方法 | |
CN1559018A (zh) | 焦点检测装置、对焦系统、照相机以及焦点检测方法 | |
TWI724673B (zh) | 光電元件特性測量裝置 | |
KR20120086333A (ko) | 적응 초점을 갖는 고속 광학 검사 시스템 | |
CN1947069A (zh) | 曝光装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: FUJI PHOTO FILM CO., LTD. Free format text: FORMER NAME OR ADDRESS: FUJIFILM HOLDINGS CORP. Owner name: FUJIFILM HOLDINGS CORP. Free format text: FORMER NAME OR ADDRESS: FUJI PHOTO FILM CO., LTD. |
|
CP03 | Change of name, title or address |
Address after: Tokyo, Japan Patentee after: FUJIFILM Corp. Address before: Tokyo, Japan Patentee before: Fujifilm Corp. Address after: Tokyo, Japan Patentee after: Fujifilm Corp. Address before: Kanagawa Patentee before: FUJIFILM Corp. |
|
ASS | Succession or assignment of patent right |
Owner name: YADE TECHNOLOGIES + ENGINEERING CO., LTD. Free format text: FORMER OWNER: FUJI FILM CORP. Effective date: 20140227 |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20140227 Address after: Tokyo, Japan Patentee after: Adrian Engineering Technology Co.,Ltd. Address before: Tokyo, Japan Patentee before: FUJIFILM Corp. |
|
CX01 | Expiry of patent term |
Granted publication date: 20071010 |
|
CX01 | Expiry of patent term |