CH666140A5 - Reattore epitassiale con campana di quarzo e suscettore di grafite. - Google Patents
Reattore epitassiale con campana di quarzo e suscettore di grafite. Download PDFInfo
- Publication number
- CH666140A5 CH666140A5 CH2789/85A CH278985A CH666140A5 CH 666140 A5 CH666140 A5 CH 666140A5 CH 2789/85 A CH2789/85 A CH 2789/85A CH 278985 A CH278985 A CH 278985A CH 666140 A5 CH666140 A5 CH 666140A5
- Authority
- CH
- Switzerland
- Prior art keywords
- reactor according
- screens
- inductor
- susceptor
- bell
- Prior art date
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims description 4
- 229910002804 graphite Inorganic materials 0.000 title claims description 4
- 239000010439 graphite Substances 0.000 title claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 239000010453 quartz Substances 0.000 claims description 16
- 238000001816 cooling Methods 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 230000003068 static effect Effects 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 238000004804 winding Methods 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 claims description 3
- 230000005674 electromagnetic induction Effects 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910000497 Amalgam Inorganic materials 0.000 claims description 2
- 230000005672 electromagnetic field Effects 0.000 claims description 2
- 230000005294 ferromagnetic effect Effects 0.000 claims description 2
- 230000010355 oscillation Effects 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 239000011248 coating agent Substances 0.000 claims 2
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- -1 ferrous metals Chemical class 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 239000011819 refractory material Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000007794 irritation Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 231100000225 lethality Toxicity 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT8421960A IT1209570B (it) | 1984-07-19 | 1984-07-19 | Perfezionamento nei reattori epitassiali. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH666140A5 true CH666140A5 (it) | 1988-06-30 |
Family
ID=11189425
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH2789/85A CH666140A5 (it) | 1984-07-19 | 1985-06-28 | Reattore epitassiale con campana di quarzo e suscettore di grafite. |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPH0644557B2 (nl) |
| CH (1) | CH666140A5 (nl) |
| DE (1) | DE3525870A1 (nl) |
| FR (1) | FR2567921B1 (nl) |
| IT (1) | IT1209570B (nl) |
| NL (1) | NL8502087A (nl) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT1215444B (it) * | 1987-04-24 | 1990-02-14 | L P E S P A | Perfezionamenti ad induttori e suscettori impiegabili in reattori epitassiali. |
| JPS636725U (nl) * | 1986-07-01 | 1988-01-18 | ||
| DE3827506C1 (en) * | 1988-08-12 | 1990-01-11 | Marino 8011 Baldham De Pradetto | Device and method for epitaxial deposition of especially semiconductor material onto silicon wafers from the gaseous state |
| IT1392068B1 (it) * | 2008-11-24 | 2012-02-09 | Lpe Spa | Camera di reazione di un reattore epitassiale |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3424298A (en) * | 1967-03-22 | 1969-01-28 | Price Wilson Ltd Price Wilson | Ammunition holder |
| US3699398A (en) * | 1971-10-12 | 1972-10-17 | Reed A Newmeyer | Sensor for vehicular traffic counters |
| DD96852A1 (nl) * | 1972-05-09 | 1973-04-12 | ||
| US4284867A (en) * | 1979-02-09 | 1981-08-18 | General Instrument Corporation | Chemical vapor deposition reactor with infrared reflector |
| US4322592A (en) * | 1980-08-22 | 1982-03-30 | Rca Corporation | Susceptor for heating semiconductor substrates |
| JPS59111997A (ja) * | 1982-12-14 | 1984-06-28 | Kyushu Denshi Kinzoku Kk | エピタキシヤル成長装置 |
| EP0147967B1 (en) * | 1983-12-09 | 1992-08-26 | Applied Materials, Inc. | Induction heated reactor system for chemical vapor deposition |
| DD221973A1 (de) * | 1984-03-20 | 1985-05-08 | Goerlitz Waggonbau Veb | Fussboden fuer schienenfahrzeuge, insbesondere trieb- und reisezugwagen |
-
1984
- 1984-07-19 IT IT8421960A patent/IT1209570B/it active
-
1985
- 1985-06-28 CH CH2789/85A patent/CH666140A5/it not_active IP Right Cessation
- 1985-07-18 JP JP60157106A patent/JPH0644557B2/ja not_active Expired - Fee Related
- 1985-07-18 FR FR8510992A patent/FR2567921B1/fr not_active Expired
- 1985-07-19 DE DE19853525870 patent/DE3525870A1/de not_active Ceased
- 1985-07-19 NL NL8502087A patent/NL8502087A/nl not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0644557B2 (ja) | 1994-06-08 |
| JPS6136924A (ja) | 1986-02-21 |
| FR2567921B1 (fr) | 1988-04-15 |
| IT1209570B (it) | 1989-08-30 |
| FR2567921A1 (fr) | 1986-01-24 |
| DE3525870A1 (de) | 1986-01-23 |
| NL8502087A (nl) | 1986-02-17 |
| IT8421960A0 (it) | 1984-07-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |