CH594989A5 - - Google Patents

Info

Publication number
CH594989A5
CH594989A5 CH1118676A CH1118676A CH594989A5 CH 594989 A5 CH594989 A5 CH 594989A5 CH 1118676 A CH1118676 A CH 1118676A CH 1118676 A CH1118676 A CH 1118676A CH 594989 A5 CH594989 A5 CH 594989A5
Authority
CH
Switzerland
Application number
CH1118676A
Inventor
Andre Dr Jaecklin
Original Assignee
Bbc Brown Boveri & Cie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bbc Brown Boveri & Cie filed Critical Bbc Brown Boveri & Cie
Priority to CH1118676A priority Critical patent/CH594989A5/xx
Priority to DE19762644654 priority patent/DE2644654A1/de
Priority to DE19767630940U priority patent/DE7630940U1/de
Priority to JP8400577A priority patent/JPS5331980A/ja
Priority to US05/826,660 priority patent/US4150391A/en
Priority to GB36582/77A priority patent/GB1529050A/en
Priority to FR7726627A priority patent/FR2363899A1/fr
Publication of CH594989A5 publication Critical patent/CH594989A5/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
    • H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT
CH1118676A 1976-09-03 1976-09-03 CH594989A5 (zh)

Priority Applications (7)

Application Number Priority Date Filing Date Title
CH1118676A CH594989A5 (zh) 1976-09-03 1976-09-03
DE19762644654 DE2644654A1 (de) 1976-09-03 1976-10-02 Halbleiterbauelement
DE19767630940U DE7630940U1 (de) 1976-09-03 1976-10-02 Halbleiterbauelement
JP8400577A JPS5331980A (en) 1976-09-03 1977-07-13 Semiconductor element
US05/826,660 US4150391A (en) 1976-09-03 1977-08-22 Gate-controlled reverse conducting thyristor
GB36582/77A GB1529050A (en) 1976-09-03 1977-09-01 Semiconductor device
FR7726627A FR2363899A1 (fr) 1976-09-03 1977-09-01 Module a semi-conducteurs

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1118676A CH594989A5 (zh) 1976-09-03 1976-09-03

Publications (1)

Publication Number Publication Date
CH594989A5 true CH594989A5 (zh) 1978-01-31

Family

ID=4370921

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1118676A CH594989A5 (zh) 1976-09-03 1976-09-03

Country Status (6)

Country Link
US (1) US4150391A (zh)
JP (1) JPS5331980A (zh)
CH (1) CH594989A5 (zh)
DE (2) DE2644654A1 (zh)
FR (1) FR2363899A1 (zh)
GB (1) GB1529050A (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2438915A1 (fr) * 1978-10-10 1980-05-09 Bbc Brown Boveri & Cie Composant a semi-conducteur de puissance et a anneaux protecteurs
FR2541512A1 (fr) * 1983-02-18 1984-08-24 Westinghouse Electric Corp Thyristor auto-protege par eclatement distant
DE3447220A1 (de) * 1983-12-30 1985-07-11 General Electric Co., Schenectady, N.Y. Thyristor mit abschaltvermoegen mit verbessertem emitter-bereich und verfahren zu seiner herstellung
EP0621643A1 (en) * 1993-03-25 1994-10-26 Mitsubishi Denki Kabushiki Kaisha Reverse conducting gate turn-off thyristor

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5936832B2 (ja) * 1978-03-14 1984-09-06 株式会社日立製作所 半導体スイッチング素子
DE2846637A1 (de) * 1978-10-11 1980-04-30 Bbc Brown Boveri & Cie Halbleiterbauelement mit mindestens einem planaren pn-uebergang und zonen- guard-ringen
JPS56104467A (en) * 1980-01-23 1981-08-20 Nippon Telegr & Teleph Corp <Ntt> Reverse conducting thyristor
JPS60119776A (ja) * 1983-11-30 1985-06-27 Mitsubishi Electric Corp ゲ−トタ−ンオフサイリスタ
CH668505A5 (de) * 1985-03-20 1988-12-30 Bbc Brown Boveri & Cie Halbleiterbauelement.
EP0224757B1 (de) * 1985-11-29 1992-07-15 BBC Brown Boveri AG Rückwärtsleitender Thyristor
DE3542570A1 (de) * 1985-12-02 1987-06-04 Siemens Ag Gate-turnoff-thyristor mit integrierter antiparalleler diode
US5164218A (en) * 1989-05-12 1992-11-17 Nippon Soken, Inc. Semiconductor device and a method for producing the same
JPH05152574A (ja) * 1991-11-29 1993-06-18 Fuji Electric Co Ltd 半導体装置
US5682044A (en) * 1995-01-31 1997-10-28 Takashige Tamamushi Reverse conducting thyristor with a planar-gate, buried-gate, or recessed-gate structure
JP4743447B2 (ja) 2008-05-23 2011-08-10 三菱電機株式会社 半導体装置
US8461620B2 (en) 2010-05-21 2013-06-11 Applied Pulsed Power, Inc. Laser pumping of thyristors for fast high current rise-times

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1483998A (zh) * 1965-05-14 1967-09-13
NL154061B (nl) * 1967-11-04 1977-07-15 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze.
US3911473A (en) * 1968-10-12 1975-10-07 Philips Corp Improved surface breakdown protection for semiconductor devices
US3978514A (en) * 1969-07-18 1976-08-31 Hitachi, Ltd. Diode-integrated high speed thyristor
US3727116A (en) * 1970-05-05 1973-04-10 Rca Corp Integral thyristor-rectifier device
DE2214187C3 (de) * 1972-03-23 1978-05-03 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor
JPS5320194B2 (zh) * 1972-04-20 1978-06-24
JPS523277B2 (zh) * 1973-05-19 1977-01-27
US4066483A (en) * 1976-07-07 1978-01-03 Western Electric Company, Inc. Gate-controlled bidirectional switching device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2438915A1 (fr) * 1978-10-10 1980-05-09 Bbc Brown Boveri & Cie Composant a semi-conducteur de puissance et a anneaux protecteurs
FR2541512A1 (fr) * 1983-02-18 1984-08-24 Westinghouse Electric Corp Thyristor auto-protege par eclatement distant
DE3447220A1 (de) * 1983-12-30 1985-07-11 General Electric Co., Schenectady, N.Y. Thyristor mit abschaltvermoegen mit verbessertem emitter-bereich und verfahren zu seiner herstellung
EP0621643A1 (en) * 1993-03-25 1994-10-26 Mitsubishi Denki Kabushiki Kaisha Reverse conducting gate turn-off thyristor
US5428230A (en) * 1993-03-25 1995-06-27 Mitsubishi Denki Kabushiki Kaisha Reverse conducting gate turn-off thyristor

Also Published As

Publication number Publication date
JPS5331980A (en) 1978-03-25
JPS6135706B2 (zh) 1986-08-14
FR2363899A1 (fr) 1978-03-31
US4150391A (en) 1979-04-17
FR2363899B1 (zh) 1983-03-25
DE7630940U1 (de) 1978-06-15
DE2644654C2 (zh) 1988-06-09
DE2644654A1 (de) 1978-03-09
GB1529050A (en) 1978-10-18

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Legal Events

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PL Patent ceased