CH564096A5 - - Google Patents

Info

Publication number
CH564096A5
CH564096A5 CH33974A CH33974A CH564096A5 CH 564096 A5 CH564096 A5 CH 564096A5 CH 33974 A CH33974 A CH 33974A CH 33974 A CH33974 A CH 33974A CH 564096 A5 CH564096 A5 CH 564096A5
Authority
CH
Switzerland
Application number
CH33974A
Original Assignee
Bosch Gmbh Robert
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bosch Gmbh Robert filed Critical Bosch Gmbh Robert
Publication of CH564096A5 publication Critical patent/CH564096A5/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
CH33974A 1973-02-16 1974-01-11 CH564096A5 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2307649A DE2307649B2 (de) 1973-02-16 1973-02-16 Anordnung zum Aufstäuben verschiedener Materialien auf einem Substrat

Publications (1)

Publication Number Publication Date
CH564096A5 true CH564096A5 (fr) 1975-07-15

Family

ID=5872099

Family Applications (1)

Application Number Title Priority Date Filing Date
CH33974A CH564096A5 (fr) 1973-02-16 1974-01-11

Country Status (8)

Country Link
US (1) US3985635A (fr)
JP (1) JPS49114585A (fr)
CH (1) CH564096A5 (fr)
DD (1) DD109670A5 (fr)
DE (1) DE2307649B2 (fr)
FR (1) FR2218402B1 (fr)
GB (1) GB1465745A (fr)
IT (1) IT1007287B (fr)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
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US4060471A (en) * 1975-05-19 1977-11-29 Rca Corporation Composite sputtering method
US4288306A (en) * 1978-07-08 1981-09-08 Wolfgang Kieferle Process for forming a metal or alloy layer and device for executing same
US4239611A (en) * 1979-06-11 1980-12-16 Vac-Tec Systems, Inc. Magnetron sputtering devices
JPS6011103B2 (ja) * 1981-02-23 1985-03-23 レオニド パフロヴイツチ サブレフ 電弧金属蒸発装置用の消耗性陰極
FR2504116A1 (fr) * 1981-04-15 1982-10-22 Commissariat Energie Atomique Procede d'obtention de couches de verres luminescents, application a la realisation de dispositifs munis de ces couches et a la realisation de photoscintillateurs.
US4362611A (en) * 1981-07-27 1982-12-07 International Business Machines Corporation Quadrupole R.F. sputtering system having an anode/cathode shield and a floating target shield
DE3248121A1 (de) * 1982-12-24 1984-06-28 Leybold-Heraeus GmbH, 5000 Köln Hochleistungs-katodenanordnung fuer die erzeugung von mehrfachschichten
US4420385A (en) * 1983-04-15 1983-12-13 Gryphon Products Apparatus and process for sputter deposition of reacted thin films
US4626336A (en) * 1985-05-02 1986-12-02 Hewlett Packard Company Target for sputter depositing thin films
DE3530074A1 (de) * 1985-08-22 1987-02-26 Siemens Ag Vorrichtung zum herstellen mehrerer aufeinanderfolgender schichten durch hochleistungs-kathodenzerstaeubung
JPS6260865A (ja) * 1985-09-11 1987-03-17 Sony Corp 積層構造薄膜の作製装置
JPS6383261A (ja) * 1986-09-26 1988-04-13 Tokyo Electron Ltd スパツタリング装置
DE3710497A1 (de) * 1987-03-30 1988-10-20 Tzn Forschung & Entwicklung Verfahren und vorrichtung zur herstellung von duennen, aus mehreren elementaren komponenten bestehenden filmen
US4814056A (en) * 1987-06-23 1989-03-21 Vac-Tec Systems, Inc. Apparatus for producing graded-composition coatings
JPH0194454U (fr) * 1987-12-10 1989-06-21
US4865710A (en) * 1988-03-31 1989-09-12 Wisconsin Alumni Research Foundation Magnetron with flux switching cathode and method of operation
ATE147890T1 (de) * 1991-05-31 1997-02-15 Deposition Sciences Inc Sputteranlage
GB2273110B (en) * 1992-12-03 1996-01-24 Gec Marconi Avionics Holdings Depositing different materials on a substrate
GB9225270D0 (en) * 1992-12-03 1993-01-27 Gec Ferranti Defence Syst Depositing different materials on a substrate
EP0625792B1 (fr) * 1993-05-19 1997-05-28 Applied Materials, Inc. Dispositif et procédé pour augmenter l'uniformité des taux de pulvérisation dans un appareil de pulvérisation
US5772858A (en) * 1995-07-24 1998-06-30 Applied Materials, Inc. Method and apparatus for cleaning a target in a sputtering source
AU1978497A (en) * 1996-03-22 1997-10-10 Materials Research Corporation Method and apparatus for rf diode sputtering
JP3249408B2 (ja) * 1996-10-25 2002-01-21 昭和シェル石油株式会社 薄膜太陽電池の薄膜光吸収層の製造方法及び製造装置
EP0803587B1 (fr) * 1997-07-15 2000-10-04 Unaxis Trading AG Procédé et appareillage de dépôt par pulvérisation cathodique
US6168690B1 (en) * 1997-09-29 2001-01-02 Lam Research Corporation Methods and apparatus for physical vapor deposition
US6086735A (en) * 1998-06-01 2000-07-11 Praxair S.T. Technology, Inc. Contoured sputtering target
US6309516B1 (en) 1999-05-07 2001-10-30 Seagate Technology Llc Method and apparatus for metal allot sputtering
US6503380B1 (en) 2000-10-13 2003-01-07 Honeywell International Inc. Physical vapor target constructions
JP2002363745A (ja) * 2001-06-08 2002-12-18 Canon Inc スパッタによる膜の形成方法、光学部材、およびスパッタ装置
US6994775B2 (en) * 2002-07-31 2006-02-07 The Regents Of The University Of California Multilayer composites and manufacture of same
US7172681B2 (en) * 2003-02-05 2007-02-06 Bridgestone Corporation Process for producing rubber-based composite material
ATE382585T1 (de) * 2003-06-24 2008-01-15 Cardinal Cg Co Konzentrationsmodulierte beschichtungen
US8084400B2 (en) * 2005-10-11 2011-12-27 Intermolecular, Inc. Methods for discretized processing and process sequence integration of regions of a substrate
WO2006071596A1 (fr) * 2004-12-27 2006-07-06 Cardinal Cg Company Ensembles cibles cylindriques blindees oscillantes et procedes d'utilisation correspondants
US8776717B2 (en) * 2005-10-11 2014-07-15 Intermolecular, Inc. Systems for discretized processing of regions of a substrate
US7902063B2 (en) * 2005-10-11 2011-03-08 Intermolecular, Inc. Methods for discretized formation of masking and capping layers on a substrate
US20070158181A1 (en) * 2006-01-12 2007-07-12 Seagate Technology Llc Method & apparatus for cathode sputtering with uniform process gas distribution
US8772772B2 (en) * 2006-05-18 2014-07-08 Intermolecular, Inc. System and method for increasing productivity of combinatorial screening
JP5284108B2 (ja) * 2006-02-10 2013-09-11 インターモレキュラー， インコーポレイテッド 材料、単位工程および工程順序のコンビナトリアル変化のための方法およびシステム
US7815782B2 (en) * 2006-06-23 2010-10-19 Applied Materials, Inc. PVD target
US8815013B2 (en) * 2006-07-19 2014-08-26 Intermolecular, Inc. Method and system for isolated and discretized process sequence integration
US8011317B2 (en) * 2006-12-29 2011-09-06 Intermolecular, Inc. Advanced mixing system for integrated tool having site-isolated reactors
US9567666B2 (en) * 2009-01-12 2017-02-14 Guardian Industries Corp Apparatus and method for making sputtered films with reduced stress asymmetry
JP5662575B2 (ja) * 2011-06-30 2015-02-04 キヤノンアネルバ株式会社 成膜装置
JP5662583B2 (ja) * 2011-09-09 2015-02-04 キヤノンアネルバ株式会社 成膜装置
WO2021220839A1 (fr) * 2020-04-30 2021-11-04 東京エレクトロン株式会社 Dispositif de dépôt physique en phase vapeur

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3324019A (en) * 1962-12-11 1967-06-06 Schjeldahl Co G T Method of sputtering sequentially from a plurality of cathodes
US3361659A (en) * 1967-08-14 1968-01-02 Ibm Process of depositing thin films by cathode sputtering using a controlled grid
DE1790178A1 (de) * 1967-10-11 1972-01-20 Varian Associates Kathoden-Zerstaeubungsvorrichtung
US3652444A (en) * 1969-10-24 1972-03-28 Ibm Continuous vacuum process apparatus

Also Published As

Publication number Publication date
GB1465745A (en) 1977-03-02
IT1007287B (it) 1976-10-30
FR2218402A1 (fr) 1974-09-13
US3985635A (en) 1976-10-12
FR2218402B1 (fr) 1976-10-08
JPS49114585A (fr) 1974-11-01
DE2307649B2 (de) 1980-07-31
DE2307649A1 (de) 1974-08-29
DD109670A5 (fr) 1974-11-12

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Legal Events

Date Code Title Description
PL Patent ceased