CH550458A - Speicherzelle zur speicherung eines bits und verwendung solcher speicherzellen in einem datenspeicher. - Google Patents

Speicherzelle zur speicherung eines bits und verwendung solcher speicherzellen in einem datenspeicher.

Info

Publication number
CH550458A
CH550458A CH971272A CH971272A CH550458A CH 550458 A CH550458 A CH 550458A CH 971272 A CH971272 A CH 971272A CH 971272 A CH971272 A CH 971272A CH 550458 A CH550458 A CH 550458A
Authority
CH
Switzerland
Prior art keywords
memory
bit
storing
data
cells
Prior art date
Application number
CH971272A
Other languages
German (de)
English (en)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of CH550458A publication Critical patent/CH550458A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025Channel region of field-effect devices
    • H01L29/1062Channel region of field-effect devices of charge coupled devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312Gate electrodes for field effect devices
    • H01L29/42396Gate electrodes for field effect devices for charge coupled devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/30DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CH971272A 1971-07-06 1972-06-28 Speicherzelle zur speicherung eines bits und verwendung solcher speicherzellen in einem datenspeicher. CH550458A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15986071A 1971-07-06 1971-07-06

Publications (1)

Publication Number Publication Date
CH550458A true CH550458A (de) 1974-06-14

Family

ID=22574399

Family Applications (1)

Application Number Title Priority Date Filing Date
CH971272A CH550458A (de) 1971-07-06 1972-06-28 Speicherzelle zur speicherung eines bits und verwendung solcher speicherzellen in einem datenspeicher.

Country Status (7)

Country Link
JP (1) JPS5145945B1 (fr)
CA (1) CA961170A (fr)
CH (1) CH550458A (fr)
DE (1) DE2232765C3 (fr)
ES (1) ES404184A1 (fr)
FR (1) FR2144903B1 (fr)
IT (1) IT956843B (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2326761A1 (fr) * 1975-09-30 1977-04-29 Siemens Ag Memoire d'informations pour la memorisation d'informations sous forme de porteurs de charge electriques et procede pour sa mise en oeuvre
DE2543628A1 (de) * 1975-09-30 1977-04-21 Siemens Ag Informationsspeicher zum speichern von information in form von elektrischen ladungstraegern und verfahren zu seinem betrieb
DE2708101A1 (de) * 1977-02-25 1978-08-31 Itt Ind Gmbh Deutsche Verfahren zum schreiben eines speichertransistors mit gate-isolierdoppelschicht

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2137069B1 (fr) * 1971-05-12 1976-03-19 Commissariat Energie Atomique
GB1374009A (en) * 1971-08-09 1974-11-13 Ibm Information storage

Also Published As

Publication number Publication date
JPS5145945B1 (fr) 1976-12-06
FR2144903A1 (fr) 1973-02-16
DE2232765C3 (de) 1982-05-27
DE2232765B2 (de) 1981-10-15
CA961170A (en) 1975-01-14
IT956843B (it) 1973-10-10
DE2232765A1 (de) 1973-01-18
ES404184A1 (es) 1975-06-01
FR2144903B1 (fr) 1977-01-14

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Legal Events

Date Code Title Description
PL Patent ceased