CH546483A - Halbleiteranordnung. - Google Patents
Halbleiteranordnung.Info
- Publication number
- CH546483A CH546483A CH974872A CH546483DA CH546483A CH 546483 A CH546483 A CH 546483A CH 974872 A CH974872 A CH 974872A CH 546483D A CH546483D A CH 546483DA CH 546483 A CH546483 A CH 546483A
- Authority
- CH
- Switzerland
- Prior art keywords
- semi
- conductor arrangement
- conductor
- arrangement
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
- H10D64/115—Resistive field plates, e.g. semi-insulating field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/40—Vertical BJTs
- H10D10/421—Vertical BJTs having both emitter-base and base-collector junctions ending at the same surface of the body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/411—PN diodes having planar bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7109139A NL7109139A (show.php) | 1971-07-02 | 1971-07-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH546483A true CH546483A (de) | 1974-02-28 |
Family
ID=19813531
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH974872A CH546483A (de) | 1971-07-02 | 1972-06-29 | Halbleiteranordnung. |
Country Status (12)
| Country | Link |
|---|---|
| JP (1) | JPS5231154B1 (show.php) |
| AU (1) | AU4397372A (show.php) |
| BE (1) | BE785747A (show.php) |
| CA (1) | CA963174A (show.php) |
| CH (1) | CH546483A (show.php) |
| DE (1) | DE2231521C2 (show.php) |
| ES (1) | ES404386A1 (show.php) |
| FR (1) | FR2144741B1 (show.php) |
| GB (1) | GB1394086A (show.php) |
| IT (1) | IT959277B (show.php) |
| NL (1) | NL7109139A (show.php) |
| SE (1) | SE377864B (show.php) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0181002A3 (en) * | 1984-11-09 | 1988-09-21 | Hitachi, Ltd. | Semiconductor device having high breakdown voltage |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2011178B (en) * | 1977-12-15 | 1982-03-17 | Philips Electronic Associated | Fieldeffect devices |
| JPS55140673A (en) * | 1979-04-14 | 1980-11-04 | Yamaha Motor Co Ltd | Rear arm mount construction |
| DE2944937A1 (de) * | 1979-11-07 | 1981-06-04 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterbauelement |
| US4947232A (en) * | 1980-03-22 | 1990-08-07 | Sharp Kabushiki Kaisha | High voltage MOS transistor |
| JPS56169369A (en) * | 1980-05-30 | 1981-12-26 | Sharp Corp | High withstand voltage mos field effect semiconductor device |
| JPS56169368A (en) * | 1980-05-30 | 1981-12-26 | Sharp Corp | High withstand voltage mos field effect semiconductor device |
| DE3520599A1 (de) * | 1984-06-15 | 1985-12-19 | Rca Corp., Princeton, N.J. | Halbleiterbauelement |
| JP2615151B2 (ja) * | 1988-08-19 | 1997-05-28 | 株式会社村田製作所 | チップ型コイル及びその製造方法 |
| US5382826A (en) * | 1993-12-21 | 1995-01-17 | Xerox Corporation | Stacked high voltage transistor unit |
| DE102016120300A1 (de) * | 2016-10-25 | 2018-04-26 | Infineon Technologies Austria Ag | Hochspannungsabschlussstruktur einer Leistungshalbleitervorrichtung |
| DE102016120301A1 (de) * | 2016-10-25 | 2018-04-26 | Infineon Technologies Ag | Leistungshalbleitervorrichtungs-Abschlussstruktur |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1260618A (en) * | 1969-08-09 | 1972-01-19 | Soc Gen Semiconduttori Spa | Planar junctions with integrated resistor, for high voltages |
-
0
- BE BE785747D patent/BE785747A/xx unknown
-
1971
- 1971-07-02 NL NL7109139A patent/NL7109139A/xx unknown
-
1972
- 1972-06-28 DE DE2231521A patent/DE2231521C2/de not_active Expired
- 1972-06-28 AU AU43973/72A patent/AU4397372A/en not_active Expired
- 1972-06-28 IT IT69092/72A patent/IT959277B/it active
- 1972-06-28 CA CA145,874A patent/CA963174A/en not_active Expired
- 1972-06-29 CH CH974872A patent/CH546483A/xx not_active IP Right Cessation
- 1972-06-29 SE SE7208572A patent/SE377864B/xx unknown
- 1972-06-29 JP JP47064531A patent/JPS5231154B1/ja active Pending
- 1972-06-29 GB GB3042772A patent/GB1394086A/en not_active Expired
- 1972-06-30 ES ES404386A patent/ES404386A1/es not_active Expired
- 1972-07-03 FR FR7224006A patent/FR2144741B1/fr not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0181002A3 (en) * | 1984-11-09 | 1988-09-21 | Hitachi, Ltd. | Semiconductor device having high breakdown voltage |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2144741B1 (show.php) | 1977-08-26 |
| NL7109139A (show.php) | 1973-01-04 |
| BE785747A (fr) | 1973-01-02 |
| IT959277B (it) | 1973-11-10 |
| JPS5231154B1 (show.php) | 1977-08-12 |
| SE377864B (show.php) | 1975-07-28 |
| DE2231521C2 (de) | 1982-05-13 |
| CA963174A (en) | 1975-02-18 |
| ES404386A1 (es) | 1975-06-01 |
| FR2144741A1 (show.php) | 1973-02-16 |
| GB1394086A (en) | 1975-05-14 |
| AU4397372A (en) | 1974-01-03 |
| DE2231521A1 (de) | 1973-01-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |