CH543893A - Verfahren zum Eindiffundieren oder Einlegieren eines Fremdstoffes in einen Halbleiterkörper - Google Patents
Verfahren zum Eindiffundieren oder Einlegieren eines Fremdstoffes in einen HalbleiterkörperInfo
- Publication number
- CH543893A CH543893A CH511471A CH511471A CH543893A CH 543893 A CH543893 A CH 543893A CH 511471 A CH511471 A CH 511471A CH 511471 A CH511471 A CH 511471A CH 543893 A CH543893 A CH 543893A
- Authority
- CH
- Switzerland
- Prior art keywords
- alloying
- diffusing
- semiconductor body
- foreign substance
- foreign
- Prior art date
Links
- 238000005275 alloying Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000126 substance Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/909—Controlled atmosphere
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19702019251 DE2019251A1 (de) | 1970-04-21 | 1970-04-21 | Verfahren zum Eindiffundieren oder Einlegieren eines Fremdstoffes in einen Halbleiterkoerper |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH543893A true CH543893A (de) | 1973-11-15 |
Family
ID=5768729
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH511471A CH543893A (de) | 1970-04-21 | 1971-04-07 | Verfahren zum Eindiffundieren oder Einlegieren eines Fremdstoffes in einen Halbleiterkörper |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US3793095A (de) |
| AT (1) | AT312055B (de) |
| CA (1) | CA954422A (de) |
| CH (1) | CH543893A (de) |
| DE (1) | DE2019251A1 (de) |
| FR (1) | FR2086210A1 (de) |
| GB (1) | GB1304131A (de) |
| NL (1) | NL7104812A (de) |
| SE (1) | SE362202B (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2922055A1 (de) * | 1979-05-30 | 1980-12-11 | Siemens Ag | Verfahren zum herstellen von halbleitereigenschaften aufweisendem silicium |
| GB2049643B (en) * | 1979-05-30 | 1983-07-20 | Siemens Ag | Process for the production of silicon having semiconducting proprties |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL95545C (de) * | 1952-04-19 | |||
| BE562490A (de) * | 1956-03-05 | 1900-01-01 | ||
| US3205102A (en) * | 1960-11-22 | 1965-09-07 | Hughes Aircraft Co | Method of diffusion |
| NL278601A (de) * | 1961-05-25 | |||
| US3178798A (en) * | 1962-05-09 | 1965-04-20 | Ibm | Vapor deposition process wherein the vapor contains both donor and acceptor impurities |
| US3245847A (en) * | 1962-11-19 | 1966-04-12 | Hughes Aircraft Co | Method of producing stable gallium arsenide and semiconductor diodes made therefrom |
| US3450581A (en) * | 1963-04-04 | 1969-06-17 | Texas Instruments Inc | Process of coating a semiconductor with a mask and diffusing an impurity therein |
| US3275557A (en) * | 1963-11-13 | 1966-09-27 | Philips Corp | Method of making mercury-doped germanium semiconductor crystals |
| US3354009A (en) * | 1965-06-29 | 1967-11-21 | Ibm | Method of forming a fabricating semiconductor by doubly diffusion |
| US3418181A (en) * | 1965-10-20 | 1968-12-24 | Motorola Inc | Method of forming a semiconductor by masking and diffusing |
| US3442725A (en) * | 1966-05-05 | 1969-05-06 | Motorola Inc | Phosphorus diffusion system |
| US3598666A (en) * | 1968-05-27 | 1971-08-10 | Gen Electric | Formation of junctions in silicon carbide by selective diffusion of dopants |
| CH483727A (de) * | 1969-03-21 | 1969-12-31 | Transistor Ag | Halbleiterelement mit mindestens einer Steuerelektrode |
| US3607450A (en) * | 1969-09-26 | 1971-09-21 | Us Air Force | Lead sulfide ion implantation mask |
-
1970
- 1970-04-21 DE DE19702019251 patent/DE2019251A1/de active Pending
-
1971
- 1971-04-01 AT AT279271A patent/AT312055B/de not_active IP Right Cessation
- 1971-04-07 CH CH511471A patent/CH543893A/de not_active IP Right Cessation
- 1971-04-08 NL NL7104812A patent/NL7104812A/xx unknown
- 1971-04-16 FR FR7113464A patent/FR2086210A1/fr not_active Withdrawn
- 1971-04-19 US US00135003A patent/US3793095A/en not_active Expired - Lifetime
- 1971-04-20 GB GB1026471*[A patent/GB1304131A/en not_active Expired
- 1971-04-21 CA CA110,927A patent/CA954422A/en not_active Expired
- 1971-04-21 SE SE05205/71A patent/SE362202B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| NL7104812A (de) | 1971-10-25 |
| GB1304131A (de) | 1973-01-24 |
| AT312055B (de) | 1973-12-10 |
| CA954422A (en) | 1974-09-10 |
| FR2086210A1 (de) | 1971-12-31 |
| US3793095A (en) | 1974-02-19 |
| DE2019251A1 (de) | 1971-11-04 |
| SE362202B (de) | 1973-12-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |