CH536035A - Verfahren zum Behandeln einer einen pn-Übergang aufweisenden, lichtemittierenden Halbleitervorrichtung - Google Patents

Verfahren zum Behandeln einer einen pn-Übergang aufweisenden, lichtemittierenden Halbleitervorrichtung

Info

Publication number
CH536035A
CH536035A CH1735971A CH1735971A CH536035A CH 536035 A CH536035 A CH 536035A CH 1735971 A CH1735971 A CH 1735971A CH 1735971 A CH1735971 A CH 1735971A CH 536035 A CH536035 A CH 536035A
Authority
CH
Switzerland
Prior art keywords
treating
light emitting
semiconductor device
emitting semiconductor
junction light
Prior art date
Application number
CH1735971A
Other languages
German (de)
English (en)
Inventor
Louis Hartman Robert
Kuhn Matthew
Schwartz Bertram
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of CH536035A publication Critical patent/CH536035A/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02241III-V semiconductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/84Coatings, e.g. passivation layers or antireflective coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Led Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Electroluminescent Light Sources (AREA)
  • Weting (AREA)
CH1735971A 1970-11-30 1971-11-29 Verfahren zum Behandeln einer einen pn-Übergang aufweisenden, lichtemittierenden Halbleitervorrichtung CH536035A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US9354470A 1970-11-30 1970-11-30
US14196471A 1971-05-10 1971-05-10

Publications (1)

Publication Number Publication Date
CH536035A true CH536035A (de) 1973-04-15

Family

ID=26787656

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1735971A CH536035A (de) 1970-11-30 1971-11-29 Verfahren zum Behandeln einer einen pn-Übergang aufweisenden, lichtemittierenden Halbleitervorrichtung

Country Status (13)

Country Link
JP (1) JPS5131153B1 (enrdf_load_stackoverflow)
BE (1) BE775868A (enrdf_load_stackoverflow)
CA (1) CA920285A (enrdf_load_stackoverflow)
CH (1) CH536035A (enrdf_load_stackoverflow)
DE (1) DE2158681C3 (enrdf_load_stackoverflow)
ES (1) ES397861A1 (enrdf_load_stackoverflow)
FR (1) FR2116159A5 (enrdf_load_stackoverflow)
GB (1) GB1360073A (enrdf_load_stackoverflow)
IE (1) IE35848B1 (enrdf_load_stackoverflow)
IT (1) IT945195B (enrdf_load_stackoverflow)
NL (1) NL155131B (enrdf_load_stackoverflow)
PH (1) PH11254A (enrdf_load_stackoverflow)
SE (1) SE367532B (enrdf_load_stackoverflow)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3776789A (en) * 1972-05-01 1973-12-04 Ibm METHOD FOR PROTECTING GaAs WAFER SURFACES
FR2287776A1 (fr) * 1974-10-09 1976-05-07 Lignes Telegraph Telephon Procede de fabrication en serie de diodes photoemissives et diodes ainsi realisees
US4843450A (en) * 1986-06-16 1989-06-27 International Business Machines Corporation Compound semiconductor interface control
US5451548A (en) * 1994-03-23 1995-09-19 At&T Corp. Electron beam deposition of gallium oxide thin films using a single high purity crystal source
US5550089A (en) * 1994-03-23 1996-08-27 Lucent Technologies Inc. Gallium oxide coatings for optoelectronic devices using electron beam evaporation of a high purity single crystal Gd3 Ga5 O12 source.
DE19509864C2 (de) * 1995-03-17 2001-10-04 Oce Printing Systems Gmbh Verfahren zur Alterung von lichtemittierenden Dioden
WO2002015281A2 (en) * 2000-08-17 2002-02-21 Power Signal Technologies, Inc. Glass-to-metal hermetically sealed led array
DE10261675B4 (de) * 2002-12-31 2013-08-14 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit strahlungsdurchlässiger elektrischer Kontaktschicht
CN111725363A (zh) * 2020-05-28 2020-09-29 南京中电熊猫液晶显示科技有限公司 一种微型发光二极管背板及其制造方法

Also Published As

Publication number Publication date
DE2158681B2 (de) 1975-08-14
DE2158681C3 (de) 1978-12-07
IE35848L (en) 1972-05-30
CA920285A (en) 1973-01-30
FR2116159A5 (enrdf_load_stackoverflow) 1972-07-07
JPS5131153B1 (enrdf_load_stackoverflow) 1976-09-04
IE35848B1 (en) 1976-06-09
NL7116220A (enrdf_load_stackoverflow) 1972-06-01
BE775868A (fr) 1972-03-16
IT945195B (it) 1973-05-10
NL155131B (nl) 1977-11-15
GB1360073A (en) 1974-07-17
PH11254A (en) 1977-10-28
SE367532B (enrdf_load_stackoverflow) 1974-05-27
DE2158681A1 (de) 1972-07-20
ES397861A1 (es) 1975-04-16

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Legal Events

Date Code Title Description
PL Patent ceased
PL Patent ceased