GB1360073A - Semiconductor devices - Google Patents
Semiconductor devicesInfo
- Publication number
- GB1360073A GB1360073A GB5527371A GB5527371A GB1360073A GB 1360073 A GB1360073 A GB 1360073A GB 5527371 A GB5527371 A GB 5527371A GB 5527371 A GB5527371 A GB 5527371A GB 1360073 A GB1360073 A GB 1360073A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- film
- gallium oxide
- conductor
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 abstract 3
- 229910001195 gallium oxide Inorganic materials 0.000 abstract 3
- 230000001590 oxidative effect Effects 0.000 abstract 3
- 230000001427 coherent effect Effects 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 abstract 1
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000009835 boiling Methods 0.000 abstract 1
- 239000003054 catalyst Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005401 electroluminescence Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000007654 immersion Methods 0.000 abstract 1
- 238000004943 liquid phase epitaxy Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910000510 noble metal Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02241—III-V semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Led Devices (AREA)
- Formation Of Insulating Films (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Electroluminescent Light Sources (AREA)
- Weting (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US9354470A | 1970-11-30 | 1970-11-30 | |
| US14196471A | 1971-05-10 | 1971-05-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1360073A true GB1360073A (en) | 1974-07-17 |
Family
ID=26787656
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB5527371A Expired GB1360073A (en) | 1970-11-30 | 1971-11-29 | Semiconductor devices |
Country Status (13)
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002015281A3 (en) * | 2000-08-17 | 2002-05-23 | Power Signal Technologies Inc | Glass-to-metal hermetically sealed led array |
| CN111725363A (zh) * | 2020-05-28 | 2020-09-29 | 南京中电熊猫液晶显示科技有限公司 | 一种微型发光二极管背板及其制造方法 |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3776789A (en) * | 1972-05-01 | 1973-12-04 | Ibm | METHOD FOR PROTECTING GaAs WAFER SURFACES |
| FR2287776A1 (fr) * | 1974-10-09 | 1976-05-07 | Lignes Telegraph Telephon | Procede de fabrication en serie de diodes photoemissives et diodes ainsi realisees |
| US4843450A (en) * | 1986-06-16 | 1989-06-27 | International Business Machines Corporation | Compound semiconductor interface control |
| US5451548A (en) * | 1994-03-23 | 1995-09-19 | At&T Corp. | Electron beam deposition of gallium oxide thin films using a single high purity crystal source |
| US5550089A (en) * | 1994-03-23 | 1996-08-27 | Lucent Technologies Inc. | Gallium oxide coatings for optoelectronic devices using electron beam evaporation of a high purity single crystal Gd3 Ga5 O12 source. |
| DE19509864C2 (de) * | 1995-03-17 | 2001-10-04 | Oce Printing Systems Gmbh | Verfahren zur Alterung von lichtemittierenden Dioden |
| DE10261675B4 (de) * | 2002-12-31 | 2013-08-14 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement mit strahlungsdurchlässiger elektrischer Kontaktschicht |
-
1971
- 1971-09-01 CA CA121897A patent/CA920285A/en not_active Expired
- 1971-11-22 SE SE14904/71A patent/SE367532B/xx unknown
- 1971-11-25 NL NL717116220A patent/NL155131B/xx not_active IP Right Cessation
- 1971-11-25 IE IE1492/71A patent/IE35848B1/xx unknown
- 1971-11-26 BE BE775868A patent/BE775868A/xx unknown
- 1971-11-26 PH PH13056A patent/PH11254A/en unknown
- 1971-11-26 DE DE2158681A patent/DE2158681C3/de not_active Expired
- 1971-11-29 FR FR7142744A patent/FR2116159A5/fr not_active Expired
- 1971-11-29 GB GB5527371A patent/GB1360073A/en not_active Expired
- 1971-11-29 IT IT54404/71A patent/IT945195B/it active
- 1971-11-29 CH CH1735971A patent/CH536035A/de not_active IP Right Cessation
- 1971-11-30 ES ES397861A patent/ES397861A1/es not_active Expired
- 1971-11-30 JP JP46096017A patent/JPS5131153B1/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002015281A3 (en) * | 2000-08-17 | 2002-05-23 | Power Signal Technologies Inc | Glass-to-metal hermetically sealed led array |
| CN111725363A (zh) * | 2020-05-28 | 2020-09-29 | 南京中电熊猫液晶显示科技有限公司 | 一种微型发光二极管背板及其制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2158681B2 (de) | 1975-08-14 |
| DE2158681C3 (de) | 1978-12-07 |
| IE35848L (en) | 1972-05-30 |
| CA920285A (en) | 1973-01-30 |
| FR2116159A5 (enrdf_load_stackoverflow) | 1972-07-07 |
| JPS5131153B1 (enrdf_load_stackoverflow) | 1976-09-04 |
| IE35848B1 (en) | 1976-06-09 |
| NL7116220A (enrdf_load_stackoverflow) | 1972-06-01 |
| BE775868A (fr) | 1972-03-16 |
| IT945195B (it) | 1973-05-10 |
| NL155131B (nl) | 1977-11-15 |
| PH11254A (en) | 1977-10-28 |
| SE367532B (enrdf_load_stackoverflow) | 1974-05-27 |
| DE2158681A1 (de) | 1972-07-20 |
| CH536035A (de) | 1973-04-15 |
| ES397861A1 (es) | 1975-04-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |