AT261766B - Verfahren zum Herstellen eines gedrifteten Halbleiterdetektors - Google Patents
Verfahren zum Herstellen eines gedrifteten HalbleiterdetektorsInfo
- Publication number
- AT261766B AT261766B AT262566A AT262566A AT261766B AT 261766 B AT261766 B AT 261766B AT 262566 A AT262566 A AT 262566A AT 262566 A AT262566 A AT 262566A AT 261766 B AT261766 B AT 261766B
- Authority
- AT
- Austria
- Prior art keywords
- drifted
- manufacturing
- semiconductor detector
- detector
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
- H01L31/117—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the bulk effect radiation detector type, e.g. Ge-Li compensated PIN gamma-ray detectors
- H01L31/1175—Li compensated PIN gamma-ray detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AT262566A AT261766B (de) | 1966-03-18 | 1966-03-18 | Verfahren zum Herstellen eines gedrifteten Halbleiterdetektors |
CH382567A CH457630A (de) | 1966-03-18 | 1967-03-15 | Verfahren zum Herstellen eines Halbleiterdetektors |
DE19671614317 DE1614317A1 (de) | 1966-03-18 | 1967-03-15 | Verfahren zum Herstellen eines Halbleiterdetektors |
FR99060A FR1514734A (fr) | 1966-03-18 | 1967-03-16 | Procédé de fabrication d'un détecteur à semi-conducteur ou analogue et produit ainsi obtenu |
US624086A US3546459A (en) | 1966-03-18 | 1967-03-17 | Single-crystal,drifted semi-conductor radiation detector having a bore therethrough |
GB12913/67A GB1115939A (en) | 1966-03-18 | 1967-03-20 | An improved method for producing a semiconductor radiation detector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AT262566A AT261766B (de) | 1966-03-18 | 1966-03-18 | Verfahren zum Herstellen eines gedrifteten Halbleiterdetektors |
Publications (1)
Publication Number | Publication Date |
---|---|
AT261766B true AT261766B (de) | 1968-05-10 |
Family
ID=3537590
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT262566A AT261766B (de) | 1966-03-18 | 1966-03-18 | Verfahren zum Herstellen eines gedrifteten Halbleiterdetektors |
Country Status (6)
Country | Link |
---|---|
US (1) | US3546459A (de) |
AT (1) | AT261766B (de) |
CH (1) | CH457630A (de) |
DE (1) | DE1614317A1 (de) |
FR (1) | FR1514734A (de) |
GB (1) | GB1115939A (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2118846A1 (en) * | 1970-12-22 | 1972-08-04 | Radiotechnique Compelec | Semiconductor detector for radiation - having separated semiconducting zones of opposite type on base material |
US4056726A (en) * | 1975-10-01 | 1977-11-01 | Princeton Gamma-Tech, Inc. | Coaxial gamma ray detector and method therefor |
US4163240A (en) * | 1977-03-21 | 1979-07-31 | The Harshaw Chemical Company | Sensitive silicon pin diode fast neutron dosimeter |
US4214253A (en) * | 1977-06-13 | 1980-07-22 | General Electric Company | Radiation detector |
US9269847B2 (en) | 2013-03-15 | 2016-02-23 | Canberra Industries, Inc. | Small anode germanium (SAGe) well radiation detector system and method |
US10048389B1 (en) | 2017-04-19 | 2018-08-14 | Mirion Technologies (Canberra), Inc. | Centroid contact radiation detector system and method |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1863843A (en) * | 1925-01-07 | 1932-06-21 | Union Switch & Signal Co | Process of preparing metal for use in unidirectional current carrying devices |
US2945955A (en) * | 1955-11-12 | 1960-07-19 | Atomic Energy Authority Uk | Apparatus for detecting radioactive particle emission |
US3005100A (en) * | 1956-06-12 | 1961-10-17 | Theos J Thompson | Nuclear scintillation monitor |
US3225198A (en) * | 1961-05-16 | 1965-12-21 | Hughes Aircraft Co | Method of measuring nuclear radiation utilizing a semiconductor crystal having a lithium compensated intrinsic region |
GB1058753A (en) * | 1962-11-02 | 1967-02-15 | Ass Elect Ind | Improvements relating to solid state devices |
-
1966
- 1966-03-18 AT AT262566A patent/AT261766B/de active
-
1967
- 1967-03-15 DE DE19671614317 patent/DE1614317A1/de active Pending
- 1967-03-15 CH CH382567A patent/CH457630A/de unknown
- 1967-03-16 FR FR99060A patent/FR1514734A/fr not_active Expired
- 1967-03-17 US US624086A patent/US3546459A/en not_active Expired - Lifetime
- 1967-03-20 GB GB12913/67A patent/GB1115939A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB1115939A (en) | 1968-06-06 |
FR1514734A (fr) | 1968-02-23 |
CH457630A (de) | 1968-06-15 |
DE1614317A1 (de) | 1970-07-02 |
US3546459A (en) | 1970-12-08 |
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