AT261766B - Verfahren zum Herstellen eines gedrifteten Halbleiterdetektors - Google Patents

Verfahren zum Herstellen eines gedrifteten Halbleiterdetektors

Info

Publication number
AT261766B
AT261766B AT262566A AT262566A AT261766B AT 261766 B AT261766 B AT 261766B AT 262566 A AT262566 A AT 262566A AT 262566 A AT262566 A AT 262566A AT 261766 B AT261766 B AT 261766B
Authority
AT
Austria
Prior art keywords
drifted
manufacturing
semiconductor detector
detector
semiconductor
Prior art date
Application number
AT262566A
Other languages
English (en)
Inventor
Harald Peter Dipl Ing Hick
Original Assignee
Oesterr Studien Atomenergie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oesterr Studien Atomenergie filed Critical Oesterr Studien Atomenergie
Priority to AT262566A priority Critical patent/AT261766B/de
Priority to CH382567A priority patent/CH457630A/de
Priority to DE19671614317 priority patent/DE1614317A1/de
Priority to FR99060A priority patent/FR1514734A/fr
Priority to US624086A priority patent/US3546459A/en
Priority to GB12913/67A priority patent/GB1115939A/en
Application granted granted Critical
Publication of AT261766B publication Critical patent/AT261766B/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/115Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H01L31/117Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the bulk effect radiation detector type, e.g. Ge-Li compensated PIN gamma-ray detectors
    • H01L31/1175Li compensated PIN gamma-ray detectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
AT262566A 1966-03-18 1966-03-18 Verfahren zum Herstellen eines gedrifteten Halbleiterdetektors AT261766B (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
AT262566A AT261766B (de) 1966-03-18 1966-03-18 Verfahren zum Herstellen eines gedrifteten Halbleiterdetektors
CH382567A CH457630A (de) 1966-03-18 1967-03-15 Verfahren zum Herstellen eines Halbleiterdetektors
DE19671614317 DE1614317A1 (de) 1966-03-18 1967-03-15 Verfahren zum Herstellen eines Halbleiterdetektors
FR99060A FR1514734A (fr) 1966-03-18 1967-03-16 Procédé de fabrication d'un détecteur à semi-conducteur ou analogue et produit ainsi obtenu
US624086A US3546459A (en) 1966-03-18 1967-03-17 Single-crystal,drifted semi-conductor radiation detector having a bore therethrough
GB12913/67A GB1115939A (en) 1966-03-18 1967-03-20 An improved method for producing a semiconductor radiation detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AT262566A AT261766B (de) 1966-03-18 1966-03-18 Verfahren zum Herstellen eines gedrifteten Halbleiterdetektors

Publications (1)

Publication Number Publication Date
AT261766B true AT261766B (de) 1968-05-10

Family

ID=3537590

Family Applications (1)

Application Number Title Priority Date Filing Date
AT262566A AT261766B (de) 1966-03-18 1966-03-18 Verfahren zum Herstellen eines gedrifteten Halbleiterdetektors

Country Status (6)

Country Link
US (1) US3546459A (de)
AT (1) AT261766B (de)
CH (1) CH457630A (de)
DE (1) DE1614317A1 (de)
FR (1) FR1514734A (de)
GB (1) GB1115939A (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2118846A1 (en) * 1970-12-22 1972-08-04 Radiotechnique Compelec Semiconductor detector for radiation - having separated semiconducting zones of opposite type on base material
US4056726A (en) * 1975-10-01 1977-11-01 Princeton Gamma-Tech, Inc. Coaxial gamma ray detector and method therefor
US4163240A (en) * 1977-03-21 1979-07-31 The Harshaw Chemical Company Sensitive silicon pin diode fast neutron dosimeter
US4214253A (en) * 1977-06-13 1980-07-22 General Electric Company Radiation detector
US9269847B2 (en) 2013-03-15 2016-02-23 Canberra Industries, Inc. Small anode germanium (SAGe) well radiation detector system and method
US10048389B1 (en) 2017-04-19 2018-08-14 Mirion Technologies (Canberra), Inc. Centroid contact radiation detector system and method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1863843A (en) * 1925-01-07 1932-06-21 Union Switch & Signal Co Process of preparing metal for use in unidirectional current carrying devices
US2945955A (en) * 1955-11-12 1960-07-19 Atomic Energy Authority Uk Apparatus for detecting radioactive particle emission
US3005100A (en) * 1956-06-12 1961-10-17 Theos J Thompson Nuclear scintillation monitor
US3225198A (en) * 1961-05-16 1965-12-21 Hughes Aircraft Co Method of measuring nuclear radiation utilizing a semiconductor crystal having a lithium compensated intrinsic region
GB1058753A (en) * 1962-11-02 1967-02-15 Ass Elect Ind Improvements relating to solid state devices

Also Published As

Publication number Publication date
GB1115939A (en) 1968-06-06
FR1514734A (fr) 1968-02-23
CH457630A (de) 1968-06-15
DE1614317A1 (de) 1970-07-02
US3546459A (en) 1970-12-08

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