CH532843A - Integrierte Schaltung und Verfahren zu deren Herstellung - Google Patents
Integrierte Schaltung und Verfahren zu deren HerstellungInfo
- Publication number
- CH532843A CH532843A CH1640271A CH1640271A CH532843A CH 532843 A CH532843 A CH 532843A CH 1640271 A CH1640271 A CH 1640271A CH 1640271 A CH1640271 A CH 1640271A CH 532843 A CH532843 A CH 532843A
- Authority
- CH
- Switzerland
- Prior art keywords
- making
- integrated circuit
- integrated
- circuit
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/641—Combinations of only vertical BJTs
- H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/63—Combinations of vertical and lateral BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7016719A NL7016719A (enrdf_load_stackoverflow) | 1970-11-14 | 1970-11-14 | |
| NL7016720A NL7016720A (enrdf_load_stackoverflow) | 1970-11-14 | 1970-11-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH532843A true CH532843A (de) | 1973-01-15 |
Family
ID=26644600
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH1640271A CH532843A (de) | 1970-11-14 | 1971-11-11 | Integrierte Schaltung und Verfahren zu deren Herstellung |
Country Status (6)
| Country | Link |
|---|---|
| CA (1) | CA964378A (enrdf_load_stackoverflow) |
| CH (1) | CH532843A (enrdf_load_stackoverflow) |
| DE (1) | DE2155050C3 (enrdf_load_stackoverflow) |
| FR (1) | FR2113968B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1369449A (enrdf_load_stackoverflow) |
| NL (2) | NL7016720A (enrdf_load_stackoverflow) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL282779A (enrdf_load_stackoverflow) * | 1961-09-08 | |||
| US3312882A (en) * | 1964-06-25 | 1967-04-04 | Westinghouse Electric Corp | Transistor structure and method of making, suitable for integration and exhibiting good power handling capability and frequency response |
| US3524113A (en) * | 1967-06-15 | 1970-08-11 | Ibm | Complementary pnp-npn transistors and fabrication method therefor |
| US3566218A (en) * | 1968-10-02 | 1971-02-23 | Nat Semiconductor Corp The | Multiple base width integrated circuit |
| GB1257136A (enrdf_load_stackoverflow) * | 1969-03-11 | 1971-12-15 |
-
1970
- 1970-11-14 NL NL7016720A patent/NL7016720A/xx unknown
- 1970-11-14 NL NL7016719A patent/NL7016719A/xx unknown
-
1971
- 1971-11-05 DE DE2155050A patent/DE2155050C3/de not_active Expired
- 1971-11-11 GB GB5240671A patent/GB1369449A/en not_active Expired
- 1971-11-11 CH CH1640271A patent/CH532843A/de not_active IP Right Cessation
- 1971-11-15 CA CA127,610A patent/CA964378A/en not_active Expired
- 1971-11-15 FR FR7140739A patent/FR2113968B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2113968B1 (enrdf_load_stackoverflow) | 1976-06-04 |
| NL7016719A (enrdf_load_stackoverflow) | 1972-05-16 |
| DE2155050B2 (de) | 1978-02-09 |
| NL7016720A (enrdf_load_stackoverflow) | 1972-05-16 |
| CA964378A (en) | 1975-03-11 |
| GB1369449A (en) | 1974-10-09 |
| DE2155050C3 (de) | 1981-07-30 |
| DE2155050A1 (de) | 1972-05-18 |
| FR2113968A1 (enrdf_load_stackoverflow) | 1972-06-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |