CA964378A - Transistor-transistor logic integrated circuit using two different base depths - Google Patents

Transistor-transistor logic integrated circuit using two different base depths

Info

Publication number
CA964378A
CA964378A CA127,610A CA127610A CA964378A CA 964378 A CA964378 A CA 964378A CA 127610 A CA127610 A CA 127610A CA 964378 A CA964378 A CA 964378A
Authority
CA
Canada
Prior art keywords
transistor
integrated circuit
different base
logic integrated
base depths
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA127,610A
Other languages
English (en)
Other versions
CA127610S (en
Inventor
Heinz W. Ruegg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of CA964378A publication Critical patent/CA964378A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63—Combinations of vertical and lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
CA127,610A 1970-11-14 1971-11-15 Transistor-transistor logic integrated circuit using two different base depths Expired CA964378A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL7016719A NL7016719A (enrdf_load_stackoverflow) 1970-11-14 1970-11-14
NL7016720A NL7016720A (enrdf_load_stackoverflow) 1970-11-14 1970-11-14

Publications (1)

Publication Number Publication Date
CA964378A true CA964378A (en) 1975-03-11

Family

ID=26644600

Family Applications (1)

Application Number Title Priority Date Filing Date
CA127,610A Expired CA964378A (en) 1970-11-14 1971-11-15 Transistor-transistor logic integrated circuit using two different base depths

Country Status (6)

Country Link
CA (1) CA964378A (enrdf_load_stackoverflow)
CH (1) CH532843A (enrdf_load_stackoverflow)
DE (1) DE2155050C3 (enrdf_load_stackoverflow)
FR (1) FR2113968B1 (enrdf_load_stackoverflow)
GB (1) GB1369449A (enrdf_load_stackoverflow)
NL (2) NL7016720A (enrdf_load_stackoverflow)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL282779A (enrdf_load_stackoverflow) * 1961-09-08
US3312882A (en) * 1964-06-25 1967-04-04 Westinghouse Electric Corp Transistor structure and method of making, suitable for integration and exhibiting good power handling capability and frequency response
US3524113A (en) * 1967-06-15 1970-08-11 Ibm Complementary pnp-npn transistors and fabrication method therefor
US3566218A (en) * 1968-10-02 1971-02-23 Nat Semiconductor Corp The Multiple base width integrated circuit
GB1257136A (enrdf_load_stackoverflow) * 1969-03-11 1971-12-15

Also Published As

Publication number Publication date
FR2113968B1 (enrdf_load_stackoverflow) 1976-06-04
NL7016719A (enrdf_load_stackoverflow) 1972-05-16
DE2155050B2 (de) 1978-02-09
NL7016720A (enrdf_load_stackoverflow) 1972-05-16
GB1369449A (en) 1974-10-09
DE2155050C3 (de) 1981-07-30
DE2155050A1 (de) 1972-05-18
FR2113968A1 (enrdf_load_stackoverflow) 1972-06-30
CH532843A (de) 1973-01-15

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