GB1369449A - Semiconductor integrated circuits - Google Patents

Semiconductor integrated circuits

Info

Publication number
GB1369449A
GB1369449A GB5240671A GB5240671A GB1369449A GB 1369449 A GB1369449 A GB 1369449A GB 5240671 A GB5240671 A GB 5240671A GB 5240671 A GB5240671 A GB 5240671A GB 1369449 A GB1369449 A GB 1369449A
Authority
GB
United Kingdom
Prior art keywords
transistor
transistors
type
base
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5240671A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1369449A publication Critical patent/GB1369449A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641Combinations of only vertical BJTs
    • H10D84/642Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63Combinations of vertical and lateral BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01Manufacture or treatment
    • H10D86/03Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
GB5240671A 1970-11-14 1971-11-11 Semiconductor integrated circuits Expired GB1369449A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL7016719A NL7016719A (enrdf_load_stackoverflow) 1970-11-14 1970-11-14
NL7016720A NL7016720A (enrdf_load_stackoverflow) 1970-11-14 1970-11-14

Publications (1)

Publication Number Publication Date
GB1369449A true GB1369449A (en) 1974-10-09

Family

ID=26644600

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5240671A Expired GB1369449A (en) 1970-11-14 1971-11-11 Semiconductor integrated circuits

Country Status (6)

Country Link
CA (1) CA964378A (enrdf_load_stackoverflow)
CH (1) CH532843A (enrdf_load_stackoverflow)
DE (1) DE2155050C3 (enrdf_load_stackoverflow)
FR (1) FR2113968B1 (enrdf_load_stackoverflow)
GB (1) GB1369449A (enrdf_load_stackoverflow)
NL (2) NL7016720A (enrdf_load_stackoverflow)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL282779A (enrdf_load_stackoverflow) * 1961-09-08
US3312882A (en) * 1964-06-25 1967-04-04 Westinghouse Electric Corp Transistor structure and method of making, suitable for integration and exhibiting good power handling capability and frequency response
US3524113A (en) * 1967-06-15 1970-08-11 Ibm Complementary pnp-npn transistors and fabrication method therefor
US3566218A (en) * 1968-10-02 1971-02-23 Nat Semiconductor Corp The Multiple base width integrated circuit
GB1257136A (enrdf_load_stackoverflow) * 1969-03-11 1971-12-15

Also Published As

Publication number Publication date
FR2113968B1 (enrdf_load_stackoverflow) 1976-06-04
NL7016719A (enrdf_load_stackoverflow) 1972-05-16
DE2155050B2 (de) 1978-02-09
NL7016720A (enrdf_load_stackoverflow) 1972-05-16
CA964378A (en) 1975-03-11
DE2155050C3 (de) 1981-07-30
DE2155050A1 (de) 1972-05-18
FR2113968A1 (enrdf_load_stackoverflow) 1972-06-30
CH532843A (de) 1973-01-15

Similar Documents

Publication Publication Date Title
US4120707A (en) Process of fabricating junction isolated IGFET and bipolar transistor integrated circuit by diffusion
GB1284257A (en) Semiconductor logical circuits
GB1401158A (en) Monolithic semiconductor structure
GB1421212A (en) Semiconductor device manufacture
GB1165029A (en) Semiconductor Monolithic Microcircuits.
GB1197403A (en) Improvements relating to Semiconductor Devices
GB1280022A (en) Improvements in and relating to semiconductor devices
GB1263127A (en) Integrated circuits
GB1444633A (en) Semiconductor integrated circuits
GB1046152A (en) Diode structure in semiconductor integrated circuit and method of making same
US3667006A (en) Semiconductor device having a lateral transistor
US3978515A (en) Integrated injection logic using oxide isolation
GB1339095A (en) Fabrication of monolithic integrated circuits
GB1483801A (en) Planar diffusion process for manufacturing monolithic integrated circuits
GB1069755A (en) Improvements in or relating to semiconductor devices
GB1364676A (en) Semiconductor integrated device
US3770519A (en) Isolation diffusion method for making reduced beta transistor or diodes
US3657612A (en) Inverse transistor with high current gain
ES355600A1 (es) Un metodo de fabricar un dispositivo semiconductor.
ES366504A1 (es) Un procedimiento para fabricar un circuito monolitico de transistores.
GB1260977A (en) Improvements in semiconductor devices
GB1516264A (en) Semiconductor devices
GB1217472A (en) Integrated circuits
GB1229294A (enrdf_load_stackoverflow)
GB1533156A (en) Semiconductor integrated circuits

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee