GB1369449A - Semiconductor integrated circuits - Google Patents
Semiconductor integrated circuitsInfo
- Publication number
- GB1369449A GB1369449A GB5240671A GB5240671A GB1369449A GB 1369449 A GB1369449 A GB 1369449A GB 5240671 A GB5240671 A GB 5240671A GB 5240671 A GB5240671 A GB 5240671A GB 1369449 A GB1369449 A GB 1369449A
- Authority
- GB
- United Kingdom
- Prior art keywords
- transistor
- transistors
- type
- base
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 3
- 238000002955 isolation Methods 0.000 abstract 2
- 239000010410 layer Substances 0.000 abstract 2
- 230000000873 masking effect Effects 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 230000003321 amplification Effects 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000001465 metallisation Methods 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 239000002365 multiple layer Substances 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/641—Combinations of only vertical BJTs
- H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/63—Combinations of vertical and lateral BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7016719A NL7016719A (enrdf_load_stackoverflow) | 1970-11-14 | 1970-11-14 | |
NL7016720A NL7016720A (enrdf_load_stackoverflow) | 1970-11-14 | 1970-11-14 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1369449A true GB1369449A (en) | 1974-10-09 |
Family
ID=26644600
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB5240671A Expired GB1369449A (en) | 1970-11-14 | 1971-11-11 | Semiconductor integrated circuits |
Country Status (6)
Country | Link |
---|---|
CA (1) | CA964378A (enrdf_load_stackoverflow) |
CH (1) | CH532843A (enrdf_load_stackoverflow) |
DE (1) | DE2155050C3 (enrdf_load_stackoverflow) |
FR (1) | FR2113968B1 (enrdf_load_stackoverflow) |
GB (1) | GB1369449A (enrdf_load_stackoverflow) |
NL (2) | NL7016720A (enrdf_load_stackoverflow) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL282779A (enrdf_load_stackoverflow) * | 1961-09-08 | |||
US3312882A (en) * | 1964-06-25 | 1967-04-04 | Westinghouse Electric Corp | Transistor structure and method of making, suitable for integration and exhibiting good power handling capability and frequency response |
US3524113A (en) * | 1967-06-15 | 1970-08-11 | Ibm | Complementary pnp-npn transistors and fabrication method therefor |
US3566218A (en) * | 1968-10-02 | 1971-02-23 | Nat Semiconductor Corp The | Multiple base width integrated circuit |
GB1257136A (enrdf_load_stackoverflow) * | 1969-03-11 | 1971-12-15 |
-
1970
- 1970-11-14 NL NL7016720A patent/NL7016720A/xx unknown
- 1970-11-14 NL NL7016719A patent/NL7016719A/xx unknown
-
1971
- 1971-11-05 DE DE2155050A patent/DE2155050C3/de not_active Expired
- 1971-11-11 GB GB5240671A patent/GB1369449A/en not_active Expired
- 1971-11-11 CH CH1640271A patent/CH532843A/de not_active IP Right Cessation
- 1971-11-15 CA CA127,610A patent/CA964378A/en not_active Expired
- 1971-11-15 FR FR7140739A patent/FR2113968B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR2113968B1 (enrdf_load_stackoverflow) | 1976-06-04 |
NL7016719A (enrdf_load_stackoverflow) | 1972-05-16 |
DE2155050B2 (de) | 1978-02-09 |
NL7016720A (enrdf_load_stackoverflow) | 1972-05-16 |
CA964378A (en) | 1975-03-11 |
DE2155050C3 (de) | 1981-07-30 |
DE2155050A1 (de) | 1972-05-18 |
FR2113968A1 (enrdf_load_stackoverflow) | 1972-06-30 |
CH532843A (de) | 1973-01-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4120707A (en) | Process of fabricating junction isolated IGFET and bipolar transistor integrated circuit by diffusion | |
GB1284257A (en) | Semiconductor logical circuits | |
GB1401158A (en) | Monolithic semiconductor structure | |
GB1421212A (en) | Semiconductor device manufacture | |
GB1165029A (en) | Semiconductor Monolithic Microcircuits. | |
GB1197403A (en) | Improvements relating to Semiconductor Devices | |
GB1280022A (en) | Improvements in and relating to semiconductor devices | |
GB1263127A (en) | Integrated circuits | |
GB1444633A (en) | Semiconductor integrated circuits | |
GB1046152A (en) | Diode structure in semiconductor integrated circuit and method of making same | |
US3667006A (en) | Semiconductor device having a lateral transistor | |
US3978515A (en) | Integrated injection logic using oxide isolation | |
GB1339095A (en) | Fabrication of monolithic integrated circuits | |
GB1483801A (en) | Planar diffusion process for manufacturing monolithic integrated circuits | |
GB1069755A (en) | Improvements in or relating to semiconductor devices | |
GB1364676A (en) | Semiconductor integrated device | |
US3770519A (en) | Isolation diffusion method for making reduced beta transistor or diodes | |
US3657612A (en) | Inverse transistor with high current gain | |
ES355600A1 (es) | Un metodo de fabricar un dispositivo semiconductor. | |
ES366504A1 (es) | Un procedimiento para fabricar un circuito monolitico de transistores. | |
GB1260977A (en) | Improvements in semiconductor devices | |
GB1516264A (en) | Semiconductor devices | |
GB1217472A (en) | Integrated circuits | |
GB1229294A (enrdf_load_stackoverflow) | ||
GB1533156A (en) | Semiconductor integrated circuits |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PCNP | Patent ceased through non-payment of renewal fee |