CH513250A - Verfahren zur Herstellung einer Kontaktschicht für Halbleitervorrichtungen - Google Patents

Verfahren zur Herstellung einer Kontaktschicht für Halbleitervorrichtungen

Info

Publication number
CH513250A
CH513250A CH224167A CH224167A CH513250A CH 513250 A CH513250 A CH 513250A CH 224167 A CH224167 A CH 224167A CH 224167 A CH224167 A CH 224167A CH 513250 A CH513250 A CH 513250A
Authority
CH
Switzerland
Prior art keywords
metal
semiconductor
deposited
layer
semiconductor material
Prior art date
Application number
CH224167A
Other languages
German (de)
English (en)
Inventor
Lacal Rodolphe
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH513250A publication Critical patent/CH513250A/de

Links

Classifications

    • H10P95/00—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B03—SEPARATION OF SOLID MATERIALS USING LIQUIDS OR USING PNEUMATIC TABLES OR JIGS; MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
    • B03D—FLOTATION; DIFFERENTIAL SEDIMENTATION
    • B03D1/00—Flotation
    • B03D1/02—Froth-flotation processes
    • B03D1/021—Froth-flotation processes for treatment of phosphate ores
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1655—Process features
    • C23C18/1662—Use of incorporated material in the solution or dispersion, e.g. particles, whiskers, wires
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D15/00—Electrolytic or electrophoretic production of coatings containing embedded materials, e.g. particles, whiskers, wires
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • H10P14/47—
    • H10W72/30—
    • H10W74/43—
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/12—Electroplating: Baths therefor from solutions of nickel or cobalt
    • H10W72/073—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31667—Next to addition polymer from unsaturated monomers, or aldehyde or ketone condensation product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Geology (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemically Coating (AREA)
CH224167A 1966-02-16 1967-02-16 Verfahren zur Herstellung einer Kontaktschicht für Halbleitervorrichtungen CH513250A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR49866A FR1474973A (fr) 1966-02-16 1966-02-16 Procédé de fabrication d'une couche de contact pour dispositifs semi-conducteurs et produits obtenus

Publications (1)

Publication Number Publication Date
CH513250A true CH513250A (de) 1971-09-30

Family

ID=8601511

Family Applications (1)

Application Number Title Priority Date Filing Date
CH224167A CH513250A (de) 1966-02-16 1967-02-16 Verfahren zur Herstellung einer Kontaktschicht für Halbleitervorrichtungen

Country Status (9)

Country Link
US (1) US3522087A (enExample)
AT (1) AT276487B (enExample)
BE (1) BE694184A (enExample)
CH (1) CH513250A (enExample)
DE (1) DE1614218B2 (enExample)
ES (1) ES336799A1 (enExample)
FR (1) FR1474973A (enExample)
GB (1) GB1177414A (enExample)
NL (1) NL158322B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4094675A (en) * 1973-07-23 1978-06-13 Licentia Patent-Verwaltungs-G.M.B.H. Vapor deposition of photoconductive selenium onto a metallic substrate having a molten metal coating as bonding layer
US3926746A (en) * 1973-10-04 1975-12-16 Minnesota Mining & Mfg Electrical interconnection for metallized ceramic arrays
FR2551461B1 (fr) * 1977-12-21 1988-10-21 Baj Vickers Ltd Procede pour l'electrodeposition de revetements composites
GB2128636B (en) * 1982-10-19 1986-01-08 Motorola Ltd Silicon-aluminium alloy metallization of semiconductor substrate
US5453293A (en) * 1991-07-17 1995-09-26 Beane; Alan F. Methods of manufacturing coated particles having desired values of intrinsic properties and methods of applying the coated particles to objects
US5820721A (en) * 1991-07-17 1998-10-13 Beane; Alan F. Manufacturing particles and articles having engineered properties
US5893966A (en) 1997-07-28 1999-04-13 Micron Technology, Inc. Method and apparatus for continuous processing of semiconductor wafers
AT408352B (de) * 1999-03-26 2001-11-26 Miba Gleitlager Ag Galvanisch abgeschiedene legierungsschicht, insbesondere eine laufschicht eines gleitlagers
DE19950187A1 (de) * 1999-10-19 2001-05-10 Pv Silicon Forschungs Und Prod Verfahren zur Herstellung von kristallinen Silizium-Dünnschichtsolarzellen
DE10015962C2 (de) * 2000-03-30 2002-04-04 Infineon Technologies Ag Hochtemperaturfeste Lotverbindung für Halbleiterbauelement
DE10015964C2 (de) * 2000-03-30 2002-06-13 Infineon Technologies Ag Lotband für flexible und temperaturfeste Lotverbindungen
JP5042894B2 (ja) * 2008-03-19 2012-10-03 松田産業株式会社 電子部品およびその製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL270517A (enExample) * 1960-11-16
NL284623A (enExample) * 1961-10-24
US3287108A (en) * 1963-01-07 1966-11-22 Hausner Entpr Inc Methods and apparatus for producing alloys
FR1370724A (fr) * 1963-07-15 1964-08-28 Electronique & Automatisme Sa Procédé de réalisation de couches minces monocristallines
US3244557A (en) * 1963-09-19 1966-04-05 Ibm Process of vapor depositing and annealing vapor deposited layers of tin-germanium and indium-germanium metastable solid solutions
US3183407A (en) * 1963-10-04 1965-05-11 Sony Corp Combined electrical element
US3400006A (en) * 1965-07-02 1968-09-03 Libbey Owens Ford Glass Co Transparent articles coated with gold, chromium, and germanium alloy film
US3400066A (en) * 1965-11-15 1968-09-03 Ibm Sputtering processes for depositing thin films of controlled thickness
US3420704A (en) * 1966-08-19 1969-01-07 Nasa Depositing semiconductor films utilizing a thermal gradient

Also Published As

Publication number Publication date
US3522087A (en) 1970-07-28
GB1177414A (en) 1970-01-14
ES336799A1 (es) 1968-01-01
DE1614218A1 (de) 1970-06-25
NL158322B (nl) 1978-10-16
FR1474973A (fr) 1967-03-31
DE1614218B2 (de) 1976-01-15
BE694184A (enExample) 1967-08-16
AT276487B (de) 1969-11-25
NL6702250A (enExample) 1967-08-17

Similar Documents

Publication Publication Date Title
DE60128923T2 (de) Nickel beschichtetes hartlötblech
DE10125323A1 (de) Elektronische Komponente, Verfahren zur Herstellung einer elektronischen Komponente sowie Leiterplatte
DE3882398T2 (de) Kontakt auf Galliumarsenid und dessen Herstellungsverfahren.
DE1614218C3 (enExample)
CH513250A (de) Verfahren zur Herstellung einer Kontaktschicht für Halbleitervorrichtungen
DE2657082A1 (de) Zwischenschicht fuer das diffusionsbinden bei voruebergehend fluessiger phase
DE1084381B (de) Legierungsverfahren zur Herstellung von pn-UEbergaengen an der Oberflaeche eines Halbleiterkoerpers
EP0383844A1 (de) Schichtwerkstoff oder schichtwerkstück und verfahren zu seiner herstellung.
DE1093484B (de) Verfahren zur Herstellung von Halbleiterbauelementen, insbesondere pnp- oder npn-Leistungstransistoren
DE2015247C3 (de) Halbleiter-Bauelement
DE3150748A1 (de) "verfahren zur herstellung einer halbleiter-vorrichtung"
DE102012216546A1 (de) Halbleiterchip, verfahren zur herstellung eines halbleiterchips und verfahren zum verlöten eines halbleiterchips mit einem träger
DE1614218C (de) Verfahren zum Herstellen einer Kontaktschicht für Halbleiteranordnungen
DE2142342A1 (de) Verfahren zur Herstellung einer Halbleiteranordnung
DE2052787A1 (de) Verfahren zur mchtelektrolytischen Goldplattierung
DE1113034B (de) Diffusionsverfahren zur gleichzeitigen Bildung von PN-UEbergaengen in mehreren Halbleiter-koerpern von Halbleiteranordnungen
DE2937518A1 (de) Selektive diffusion von aluminium in einem offenen rohr
DE102015121633A1 (de) Elektrolyt, Verfahren zum Ausbilden einer Kupferschicht und Verfahren zum Ausbilden eines Chips
DE102020006059A1 (de) Elektrisch leitendes Material mit Beschichtung
DE102009040632B4 (de) Halbleiter-Bauelement und Verfahren zum Herstellen eines Halbleiter-Bauelements und damit hergestelltes Halbleiter-Bauelement
DE4306871A1 (enExample)
DE1061906B (de) Verfahren zur Herstellung von Flaechen-Halbleiterkristalloden mit mindestens zwei verschmolzenen Halbleiterteilen vom entgegengesetzten Leitfaehigkeitstyp
AT223114B (de) Verfahren zum Verbinden von keramischem Material mit Metall durch Verlöten und Lötmaterial
DE1483293C (de) Legierung fur eine Siliziumdiode mit ubersteüer Grenzflache und veränderlicher Kapazität und Verfahren zu ihrer Herstel lung
DE977513C (de) Verfahren zur Beseitigung eines Sperreffektes von flaechenhaften Kontaktelektroden an Halbleiterkoerpern aus Germanium oder Silizium

Legal Events

Date Code Title Description
PL Patent ceased