CH503518A - Verfahren zum Herstellen stabförmiger Siliciumeinkristalle mit über die gesamte Stablänge homogener Antimondotierung - Google Patents

Verfahren zum Herstellen stabförmiger Siliciumeinkristalle mit über die gesamte Stablänge homogener Antimondotierung

Info

Publication number
CH503518A
CH503518A CH828267A CH828267A CH503518A CH 503518 A CH503518 A CH 503518A CH 828267 A CH828267 A CH 828267A CH 828267 A CH828267 A CH 828267A CH 503518 A CH503518 A CH 503518A
Authority
CH
Switzerland
Prior art keywords
antimony
draw
doped
prodn
amt
Prior art date
Application number
CH828267A
Other languages
English (en)
Inventor
Kappelmeyer Rudolf
Hugo Kellerbauer Max
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH503518A publication Critical patent/CH503518A/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CH828267A 1966-06-13 1967-06-12 Verfahren zum Herstellen stabförmiger Siliciumeinkristalle mit über die gesamte Stablänge homogener Antimondotierung CH503518A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0104258 1966-06-13

Publications (1)

Publication Number Publication Date
CH503518A true CH503518A (de) 1971-02-28

Family

ID=7525738

Family Applications (1)

Application Number Title Priority Date Filing Date
CH828267A CH503518A (de) 1966-06-13 1967-06-12 Verfahren zum Herstellen stabförmiger Siliciumeinkristalle mit über die gesamte Stablänge homogener Antimondotierung

Country Status (7)

Country Link
US (1) US3501406A (de)
AT (1) AT270750B (de)
CH (1) CH503518A (de)
DE (1) DE1544292C3 (de)
GB (1) GB1140656A (de)
NL (1) NL6707642A (de)
SE (1) SE326160B (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615261A (en) * 1969-04-02 1971-10-26 Motorola Inc Method of producing single semiconductor crystals
US3865554A (en) * 1971-09-23 1975-02-11 Little Inc A Pressure-and temperature-controlled apparatus for large-scale production of crystals by the czochralski technique
US4911896A (en) * 1986-07-24 1990-03-27 General Electric Company Fused quartz member for use in semiconductor manufacture
US4789596A (en) * 1987-11-27 1988-12-06 Ethyl Corporation Dopant coated bead-like silicon particles
JPH0777999B2 (ja) * 1989-11-24 1995-08-23 信越半導体株式会社 アンチモンドープ単結晶シリコンの育成方法
NO335110B1 (no) * 2011-10-06 2014-09-15 Elkem Solar As Fremgangsmåte for fremstilling av silisiummonokrystall og multikrystalline silisiumingoter
CN113862776A (zh) * 2021-09-30 2021-12-31 西安奕斯伟材料科技有限公司 一种用于制造掺氮单晶硅的设备及方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2981687A (en) * 1958-04-03 1961-04-25 British Thomson Houston Co Ltd Production of mono-crystal semiconductor bodies
DE1164680B (de) * 1958-05-21 1964-03-05 Siemens Ag Verfahren zum Herstellen von stabfoermigen Halbleiterkoerpern hoher Reinheit
DE1296132B (de) * 1965-03-19 1969-05-29 Siemens Ag Verfahren zur Herstellung von Halbleiterstaeben durch Ziehen aus der Schmelze

Also Published As

Publication number Publication date
DE1544292C3 (de) 1976-01-08
US3501406A (en) 1970-03-17
GB1140656A (en) 1969-01-22
NL6707642A (de) 1967-12-14
DE1544292B2 (de) 1975-05-28
SE326160B (de) 1970-07-20
AT270750B (de) 1969-05-12
DE1544292A1 (de) 1970-07-02

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Legal Events

Date Code Title Description
PL Patent ceased