JPS54161591A - Crystal refining and single crystal producing device - Google Patents

Crystal refining and single crystal producing device

Info

Publication number
JPS54161591A
JPS54161591A JP7050278A JP7050278A JPS54161591A JP S54161591 A JPS54161591 A JP S54161591A JP 7050278 A JP7050278 A JP 7050278A JP 7050278 A JP7050278 A JP 7050278A JP S54161591 A JPS54161591 A JP S54161591A
Authority
JP
Japan
Prior art keywords
heaters
boat
melt
zone
tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7050278A
Other languages
Japanese (ja)
Inventor
Kazutaka Terajima
Shoichi Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7050278A priority Critical patent/JPS54161591A/en
Publication of JPS54161591A publication Critical patent/JPS54161591A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To produce a uniform single crystal without rippling a melt in a boat by turning on and off a plurality of heaters, in order, arranged in the longitudinal direction of a heating furnace set around a reaction tube to zone-melt semiconductor materials in the boat placed in the tube. CONSTITUTION:While evacuating reaction tube 21a a current is supplied to heaters 24 arranged in the inner part of heating furnace 23 to melt semiconductor materials such as In and Sb in boat 22. This melt is treated at below a predetermined temp. for a predetermined time to scatter Sb, and the inside of tube 21 is replaced with a reducing gas such as H2 gas. Heaters 24 are turned off, and independent heaters 25a -25j arranged in the outer part of furnace 23 are turned on and off through counters in order. As a result, without applying vibration boat 2 is zone-heated in a static state to prevent impurities in liquid phase from being taken in solid phase, and a preliminary process is performed to effectively purify polycrystalline InSb with good reproducibility. By similar operation a zone refining process is performed to grow uniform crystalline ingot 26.
JP7050278A 1978-06-12 1978-06-12 Crystal refining and single crystal producing device Pending JPS54161591A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7050278A JPS54161591A (en) 1978-06-12 1978-06-12 Crystal refining and single crystal producing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7050278A JPS54161591A (en) 1978-06-12 1978-06-12 Crystal refining and single crystal producing device

Publications (1)

Publication Number Publication Date
JPS54161591A true JPS54161591A (en) 1979-12-21

Family

ID=13433356

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7050278A Pending JPS54161591A (en) 1978-06-12 1978-06-12 Crystal refining and single crystal producing device

Country Status (1)

Country Link
JP (1) JPS54161591A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102392294A (en) * 2011-11-15 2012-03-28 中国科学院上海技术物理研究所 Horizontal vacuum zone-melting preparation method of high-purity semiconductor material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102392294A (en) * 2011-11-15 2012-03-28 中国科学院上海技术物理研究所 Horizontal vacuum zone-melting preparation method of high-purity semiconductor material

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