CH494475A - Verfahren zur Herstellung eines Schaltungsmoduls mit einer integrierten Halbleiterschaltanordnung - Google Patents
Verfahren zur Herstellung eines Schaltungsmoduls mit einer integrierten HalbleiterschaltanordnungInfo
- Publication number
- CH494475A CH494475A CH116865A CH116865A CH494475A CH 494475 A CH494475 A CH 494475A CH 116865 A CH116865 A CH 116865A CH 116865 A CH116865 A CH 116865A CH 494475 A CH494475 A CH 494475A
- Authority
- CH
- Switzerland
- Prior art keywords
- soldered
- insulating plate
- plate
- head piece
- contact
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 238000002360 preparation method Methods 0.000 title abstract 2
- 235000012431 wafers Nutrition 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 230000001419 dependent effect Effects 0.000 claims 1
- 229920005989 resin Polymers 0.000 claims 1
- 239000011347 resin Substances 0.000 claims 1
- 229920003002 synthetic resin Polymers 0.000 claims 1
- 239000000057 synthetic resin Substances 0.000 claims 1
- 238000003466 welding Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 6
- 238000005476 soldering Methods 0.000 abstract description 6
- 239000011521 glass Substances 0.000 abstract description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052802 copper Inorganic materials 0.000 abstract description 3
- 239000010949 copper Substances 0.000 abstract description 3
- 229910000679 solder Inorganic materials 0.000 abstract description 3
- 239000000919 ceramic Substances 0.000 abstract description 2
- 238000010276 construction Methods 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000012815 thermoplastic material Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 235000012773 waffles Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Die Bonding (AREA)
- Wire Bonding (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB4215/64A GB1048214A (en) | 1964-01-31 | 1964-01-31 | Improvements in or relating to semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
CH494475A true CH494475A (de) | 1970-07-31 |
Family
ID=9772919
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH116865A CH494475A (de) | 1964-01-31 | 1965-01-26 | Verfahren zur Herstellung eines Schaltungsmoduls mit einer integrierten Halbleiterschaltanordnung |
Country Status (5)
Country | Link |
---|---|
BE (1) | BE659092A (en)) |
CH (1) | CH494475A (en)) |
DE (1) | DE1244889B (en)) |
GB (1) | GB1048214A (en)) |
NL (1) | NL6501144A (en)) |
-
1964
- 1964-01-31 GB GB4215/64A patent/GB1048214A/en not_active Expired
-
1965
- 1965-01-26 CH CH116865A patent/CH494475A/de not_active IP Right Cessation
- 1965-01-29 NL NL6501144A patent/NL6501144A/xx unknown
- 1965-01-30 DE DEST23285A patent/DE1244889B/de active Pending
- 1965-02-01 BE BE659092D patent/BE659092A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
GB1048214A (en) | 1966-11-16 |
DE1244889B (de) | 1967-07-20 |
NL6501144A (en)) | 1965-08-02 |
BE659092A (en)) | 1965-08-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0358867A1 (de) | Flip-Chip-Montage mit einer Lötstoppschicht aus einem oxidierbaren Metall | |
DE3887801T2 (de) | Mit einer Wärmeabfuhrvorrichtung versehene gedruckte Schaltung. | |
DE1640457C2 (en)) | ||
DE2644283C3 (de) | Verfahren zum Herstellen eines thermoelektrischen Bausteins | |
DE4000089C2 (en)) | ||
DE3042085A1 (de) | Halbleiterplaettchen-montageaufbau und verfahren zu seiner herstellung | |
DE3201802A1 (de) | Bondverfahren fuer elektronische bauelemente | |
DE1665882A1 (de) | Verfahren zur Herstellung einer elektrischen Verdrahtung und Drahtverbindungen fuer elektrische Bauelemente | |
DE69030223T2 (de) | Gestapeltes Mehrschichtsubstrat zum Montieren integrierter Schaltungen | |
DE3780564T2 (de) | Oberflaechenmontierungsdiode. | |
EP0209767A1 (de) | Verfahren zum Herstellen von Halbleiterelementen | |
EP0552195B1 (de) | Eine hybride halbleiterstruktur | |
DE1766879B1 (de) | Elektronischer baustein | |
DE1286642B (de) | Verfahren zur Herstellung einer Halbleiteranordnung | |
EP0769214B1 (de) | Verfahren zur herstellung einer elektrisch leitenden verbindung | |
DE3930858A1 (de) | Modulaufbau | |
DE4201931C1 (en)) | ||
DE3137570A1 (de) | Verfahren zum direkten verbinden von kupferteilen mit oxidkeramiksubstraten | |
DE2615758A1 (de) | Verfahren zur herstellung einer anordnung fuer das packen monolithisch integrierter schaltungen | |
DE19715926A1 (de) | Herstellungsverfahren für externen Anschluß für Kugelgitterarray-Bauteil | |
DE2528000A1 (de) | Verfahren zur herstellung einer loetflaeche relativ grosser abmessungen | |
DE1812130B2 (de) | Verfahren zum herstellen einer halbleiter- oder dickfilmanordnung | |
CH494475A (de) | Verfahren zur Herstellung eines Schaltungsmoduls mit einer integrierten Halbleiterschaltanordnung | |
DE1952499A1 (de) | Verfahren zum Herstellen eines Halbleiterbauelements | |
DE2550512A1 (de) | Verfahren zur herstellung einer metallisierung auf einem substrat |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PL | Patent ceased |