CH455048A - Verfahren zum Herstellen einer Maske für die Aufdampfung des Elektrodenmetalls auf einem Halbleiterkörper - Google Patents
Verfahren zum Herstellen einer Maske für die Aufdampfung des Elektrodenmetalls auf einem HalbleiterkörperInfo
- Publication number
- CH455048A CH455048A CH1010660A CH1010660A CH455048A CH 455048 A CH455048 A CH 455048A CH 1010660 A CH1010660 A CH 1010660A CH 1010660 A CH1010660 A CH 1010660A CH 455048 A CH455048 A CH 455048A
- Authority
- CH
- Switzerland
- Prior art keywords
- mask
- producing
- vapor deposition
- semiconductor body
- electrode metal
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000002184 metal Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 238000007740 vapor deposition Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES65034A DE1112586B (de) | 1959-09-22 | 1959-09-22 | Verfahren zum Herstellen der Elektroden einer Halbleiteranordnung und nach diesem Verfahren hergestellte Halbleiteranordnung |
Publications (1)
Publication Number | Publication Date |
---|---|
CH455048A true CH455048A (de) | 1968-04-30 |
Family
ID=7497691
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH1010660A CH455048A (de) | 1959-09-22 | 1960-09-07 | Verfahren zum Herstellen einer Maske für die Aufdampfung des Elektrodenmetalls auf einem Halbleiterkörper |
Country Status (4)
Country | Link |
---|---|
CH (1) | CH455048A (de) |
DE (1) | DE1112586B (de) |
GB (1) | GB921724A (de) |
NL (1) | NL255665A (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1206090B (de) * | 1962-04-16 | 1965-12-02 | Telefunken Patent | Verfahren zum AEtzen eines Mesatransistors |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE823470C (de) * | 1950-09-12 | 1951-12-03 | Siemens Ag | Verfahren zum AEtzen eines Halbleiters |
DE971583C (de) * | 1951-09-07 | 1959-02-19 | Siemens Ag | Trockengleichrichter |
BE555335A (de) * | 1956-02-28 |
-
0
- NL NL255665D patent/NL255665A/xx unknown
-
1959
- 1959-09-22 DE DES65034A patent/DE1112586B/de active Pending
-
1960
- 1960-09-07 CH CH1010660A patent/CH455048A/de unknown
- 1960-09-22 GB GB3259260A patent/GB921724A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1112586B (de) | 1961-08-10 |
GB921724A (en) | 1963-03-20 |
NL255665A (de) |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CH473905A (de) | Verfahren zum Überziehen eines Metallsubstrats | |
CH367859A (de) | Verfahren zum Erzeugen einer Spannung, die vom Unterschied zwischen zwei Frequenzen abhängt | |
CH384972A (de) | Verfahren zum elektrolytischen Aufbringen eines glänzenden Überzuges aus Gold oder einer Goldlegierung | |
CH382510A (de) | Verfahren zur Herstellung eines Schiebergehäuses und nach dem Verfahren hergestelltes Schiebergehäuse | |
CH470490A (de) | Verfahren zum Erzeugen einer harten Oberfläche auf Gegenständen aus Titan oder einer titanhaltigen Legierung | |
CH365802A (de) | Verfahren zur grossflächigen Kontaktierung eines Siliziumkörpers | |
CH369829A (de) | Verfahren zur Herstellung einer Halbleiteranordnung auf der Basis eines Halbleiterkörpers und nach diesem Verfahren hergestellte Halbleiteranordnung | |
CH443840A (de) | Verfahren zur Herstellung eines Metallüberzugs auf einem Keramikkörper | |
CH402031A (de) | Verfahren zur Herstellung eines Silicium-Eisen-Bleches | |
CH469813A (de) | Verfahren zur Herstellung einer chromhaltigen Schicht auf einem Metallkörper | |
CH455048A (de) | Verfahren zum Herstellen einer Maske für die Aufdampfung des Elektrodenmetalls auf einem Halbleiterkörper | |
CH387804A (de) | Verfahren zum Aufschmelzen einer Elektrode auf einen Halbleiterkörper | |
CH432177A (de) | Vorrichtung zum Aufdampfen einer Metallschicht auf die Innenseite eines Kolbens | |
CH348422A (de) | Verfahren für die Herstellung eines Faltenbalges für Fahrzeuge | |
CH376669A (de) | Verfahren zur Herstellung eines Metalls bzw. Halbmetalls | |
AT239854B (de) | Verfahren zum Verbinden eines Metalleiters mit einem Halbleiterkörper | |
CH375799A (de) | Verfahren zur Herstellung eines Halbleiterkörpers | |
CH365145A (de) | Verfahren zum Herstellen einer Halbleiteranordnung und nach diesem Verfahren hergestellte Halbleiteranordnung | |
CH406441A (de) | Verfahren zur Herstellung einer Kontaktelektrode für Halbleiteranordnungen und nach diesem Verfahren hergestellte Kontaktelektrode | |
CH432671A (de) | Verfahren zur Herstellung eines vanadiumhaltigen, ferromagnetischen Körpers | |
AT246014B (de) | Verfahren zur Herstellung eines Ventilsackes | |
AT263955B (de) | Verfahren zur Herstellung eines Brennstoffkörpers für Atomreaktoren | |
CH395343A (de) | Verfahren zum Erzeugen mindestens zweier benachbarter Elektroden auf einem Halbleiterkörper | |
CH382610A (de) | Vorrichtung zum kontinuierlichen Umformen eines flachen Faserbandes | |
CH404478A (de) | Verfahren zum Aufbringen eines Überzuges auf Metallfedern |