CH448213A - Dispositif de contrôle à semi-conducteurs pour courant alternatif - Google Patents

Dispositif de contrôle à semi-conducteurs pour courant alternatif

Info

Publication number
CH448213A
CH448213A CH389566A CH389566A CH448213A CH 448213 A CH448213 A CH 448213A CH 389566 A CH389566 A CH 389566A CH 389566 A CH389566 A CH 389566A CH 448213 A CH448213 A CH 448213A
Authority
CH
Switzerland
Prior art keywords
control device
semiconductor control
semiconductor
control
Prior art date
Application number
CH389566A
Other languages
English (en)
French (fr)
Inventor
Rudolf Wallertshauser Hans
Original Assignee
Secheron Atel
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Secheron Atel filed Critical Secheron Atel
Priority to CH389566A priority Critical patent/CH448213A/fr
Priority claimed from CH389666A external-priority patent/CH445628A/fr
Priority to DE1614445A priority patent/DE1614445C3/de
Priority to DE1614444A priority patent/DE1614444C2/de
Priority to FR69048400A priority patent/FR1515458A/fr
Priority to FR69048399A priority patent/FR1515457A/fr
Priority to GB1196267A priority patent/GB1168851A/en
Priority to GB1196167A priority patent/GB1155236A/en
Publication of CH448213A publication Critical patent/CH448213A/fr

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/722—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit
    • H03K17/723—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit using transformer coupling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/44—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements the complete device being wholly immersed in a fluid other than air
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Rectifiers (AREA)
  • Thyristors (AREA)
CH389566A 1966-03-16 1966-03-16 Dispositif de contrôle à semi-conducteurs pour courant alternatif CH448213A (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
CH389566A CH448213A (fr) 1966-03-16 1966-03-16 Dispositif de contrôle à semi-conducteurs pour courant alternatif
DE1614445A DE1614445C3 (de) 1966-03-16 1967-03-10 Steuerbares Gleichrichterbauteil
DE1614444A DE1614444C2 (de) 1966-03-16 1967-03-10 Gleichrichterbauteil mit Halbleitergleichrichtern
FR69048400A FR1515458A (fr) 1966-03-16 1967-03-13 Dispositif redresseur à semi-conducteurs en parallèle
FR69048399A FR1515457A (fr) 1966-03-16 1967-03-13 Dispositif de contrôle à semi-conducteurs pour courant alternatif
GB1196267A GB1168851A (en) 1966-03-16 1967-03-14 Semiconductor Rectifier Device in Parallel Connection
GB1196167A GB1155236A (en) 1966-03-16 1967-03-14 Semiconductor Device for the Control of Alternating Current.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CH389666A CH445628A (fr) 1966-03-16 1966-03-16 Dispositif redresseur à semi-conducteurs en parallèle
CH389566A CH448213A (fr) 1966-03-16 1966-03-16 Dispositif de contrôle à semi-conducteurs pour courant alternatif

Publications (1)

Publication Number Publication Date
CH448213A true CH448213A (fr) 1967-12-15

Family

ID=25694119

Family Applications (1)

Application Number Title Priority Date Filing Date
CH389566A CH448213A (fr) 1966-03-16 1966-03-16 Dispositif de contrôle à semi-conducteurs pour courant alternatif

Country Status (4)

Country Link
CH (1) CH448213A (de)
DE (2) DE1614444C2 (de)
FR (2) FR1515457A (de)
GB (2) GB1155236A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0115000A2 (de) * 1983-01-03 1984-08-08 General Electric Company Leistungschip-Packung

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3143336A1 (de) * 1981-10-31 1983-05-19 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Halbleitergleichrichterbaueinheit
JPS5968958A (ja) * 1982-10-12 1984-04-19 Mitsubishi Electric Corp ゲ−トタ−ンオフサイリスタ組立体
JPS61218151A (ja) * 1985-03-23 1986-09-27 Hitachi Ltd 半導体装置
US5006921A (en) * 1988-03-31 1991-04-09 Kabushiki Kaisha Toshiba Power semiconductor switching apparatus with heat sinks
DE19615112A1 (de) * 1996-04-17 1997-10-23 Asea Brown Boveri Leistungshalbleiterbauelement

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH338528A (de) * 1954-07-31 1959-05-31 Siemens Ag Trockengleichrichteranordnung
NL295752A (de) * 1962-06-09
FR1399802A (fr) * 1963-05-03 1965-05-21 Westinghouse Electric Corp Appareil électrique
US3370207A (en) * 1964-02-24 1968-02-20 Gen Electric Multilayer contact system for semiconductor devices including gold and copper layers
FR1431304A (fr) * 1964-03-30 1966-03-11 Gen Electric Perfectionnements apportés aux organes de contact pour dispositifs semiconducteurs

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0115000A2 (de) * 1983-01-03 1984-08-08 General Electric Company Leistungschip-Packung
EP0115000A3 (en) * 1983-01-03 1986-11-26 General Electric Company Power chip package

Also Published As

Publication number Publication date
DE1614445A1 (de) 1970-09-10
DE1614444C2 (de) 1978-08-31
GB1155236A (en) 1969-06-18
FR1515458A (fr) 1968-03-01
DE1614444B1 (de) 1974-08-01
DE1614445B2 (de) 1974-08-08
GB1168851A (en) 1969-10-29
DE1614445C3 (de) 1975-04-03
FR1515457A (fr) 1968-03-01

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