GB1168851A - Semiconductor Rectifier Device in Parallel Connection - Google Patents

Semiconductor Rectifier Device in Parallel Connection

Info

Publication number
GB1168851A
GB1168851A GB1196267A GB1196267A GB1168851A GB 1168851 A GB1168851 A GB 1168851A GB 1196267 A GB1196267 A GB 1196267A GB 1196267 A GB1196267 A GB 1196267A GB 1168851 A GB1168851 A GB 1168851A
Authority
GB
United Kingdom
Prior art keywords
casing
metal plates
elements
resistors
march
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1196267A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Secheron SA
Original Assignee
Ateliers de Secheron SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CH389666A external-priority patent/CH445628A/en
Application filed by Ateliers de Secheron SA filed Critical Ateliers de Secheron SA
Publication of GB1168851A publication Critical patent/GB1168851A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/722—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit
    • H03K17/723—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit using transformer coupling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/44—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements the complete device being wholly immersed in a fluid other than air
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor

Abstract

1,168,851. Rectifier assemblies. SOC. ANON. DES ATELIERS DE SECHERON. 14 March, 1967 [16 March, 1966], No. 11962/67. Heading H1K. A power rectifier assembly comprises a plurality of semi-conductor rectifier elements mounted in a common casing between massive metal plates which are urged against them. In Fig. 1 the finned metal plates 6, 66 are external of the casing. In this case additional massive metal plates forming part of the casing wall, or within the casing may be provided between the elements and plates 6, 66. Alternatively the metal plates may themselves constitute the end walls of the casing. The elements may be PN silicon elements or PNPN controlled rectifiers. In the latter event the control electrodes may have independent connections to the exterior of the casing or may be interconnected internally through resistors, the junction of the resistors being provided with an external connection. In a further arrangement the control electrodes are connected via diodes and resistors in series to the secondaries of a pulse transformer accommodated in the housing.
GB1196267A 1966-03-16 1967-03-14 Semiconductor Rectifier Device in Parallel Connection Expired GB1168851A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CH389566A CH448213A (en) 1966-03-16 1966-03-16 AC semiconductor control device
CH389666A CH445628A (en) 1966-03-16 1966-03-16 Parallel semiconductor rectifier device

Publications (1)

Publication Number Publication Date
GB1168851A true GB1168851A (en) 1969-10-29

Family

ID=25694119

Family Applications (2)

Application Number Title Priority Date Filing Date
GB1196267A Expired GB1168851A (en) 1966-03-16 1967-03-14 Semiconductor Rectifier Device in Parallel Connection
GB1196167A Expired GB1155236A (en) 1966-03-16 1967-03-14 Semiconductor Device for the Control of Alternating Current.

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB1196167A Expired GB1155236A (en) 1966-03-16 1967-03-14 Semiconductor Device for the Control of Alternating Current.

Country Status (4)

Country Link
CH (1) CH448213A (en)
DE (2) DE1614444C2 (en)
FR (2) FR1515457A (en)
GB (2) GB1168851A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3143336A1 (en) * 1981-10-31 1983-05-19 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg SEMICONDUCTOR RECTIFIER UNIT
JPS5968958A (en) * 1982-10-12 1984-04-19 Mitsubishi Electric Corp Gate turn-off thyristor assembled body
US4538170A (en) * 1983-01-03 1985-08-27 General Electric Company Power chip package
JPS61218151A (en) * 1985-03-23 1986-09-27 Hitachi Ltd Semiconductor device
DE3910470C2 (en) * 1988-03-31 1995-03-09 Toshiba Kawasaki Kk Power semiconductor switch device with reduced thermal load in the chips involved, especially thermal stress
DE19615112A1 (en) * 1996-04-17 1997-10-23 Asea Brown Boveri Power semiconductor component with two-lid housing

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH338528A (en) * 1954-07-31 1959-05-31 Siemens Ag Dry rectifier arrangement
BE633287A (en) * 1962-06-09
FR1399802A (en) * 1963-05-03 1965-05-21 Westinghouse Electric Corp Electrical appliance
US3370207A (en) * 1964-02-24 1968-02-20 Gen Electric Multilayer contact system for semiconductor devices including gold and copper layers
FR1431304A (en) * 1964-03-30 1966-03-11 Gen Electric Improvements made to contact members for semiconductor devices

Also Published As

Publication number Publication date
FR1515457A (en) 1968-03-01
DE1614444B1 (en) 1974-08-01
DE1614444C2 (en) 1978-08-31
GB1155236A (en) 1969-06-18
DE1614445A1 (en) 1970-09-10
DE1614445C3 (en) 1975-04-03
DE1614445B2 (en) 1974-08-08
CH448213A (en) 1967-12-15
FR1515458A (en) 1968-03-01

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