CH389104A - Einkristalline Halbleiteranordnung und Verfahren zu deren Herstellung - Google Patents

Einkristalline Halbleiteranordnung und Verfahren zu deren Herstellung

Info

Publication number
CH389104A
CH389104A CH1267860A CH1267860A CH389104A CH 389104 A CH389104 A CH 389104A CH 1267860 A CH1267860 A CH 1267860A CH 1267860 A CH1267860 A CH 1267860A CH 389104 A CH389104 A CH 389104A
Authority
CH
Switzerland
Prior art keywords
manufacture
semiconductor device
monocrystalline semiconductor
monocrystalline
semiconductor
Prior art date
Application number
CH1267860A
Other languages
English (en)
Inventor
Irmler Horst Dr Dipl-Phys
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH389104A publication Critical patent/CH389104A/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/38—Devices controlled only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/16—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a liquid phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50—Alloying conductive materials with semiconductor bodies
CH1267860A 1959-11-13 1960-11-11 Einkristalline Halbleiteranordnung und Verfahren zu deren Herstellung CH389104A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES65833A DE1208412B (de) 1959-11-13 1959-11-13 Elektrisches Halbleiterbauelement mit mindestens einem an die Oberflaeche des Halbleiterkoerpers tretenden pn-UEbergang und Verfahren zum Herstellen eines solchen Bauelements

Publications (1)

Publication Number Publication Date
CH389104A true CH389104A (de) 1965-03-15

Family

ID=7498342

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1267860A CH389104A (de) 1959-11-13 1960-11-11 Einkristalline Halbleiteranordnung und Verfahren zu deren Herstellung

Country Status (2)

Country Link
CH (1) CH389104A (de)
DE (1) DE1208412B (de)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE523775A (de) * 1950-09-29
NL99247C (de) * 1954-03-05
US2813048A (en) * 1954-06-24 1957-11-12 Bell Telephone Labor Inc Temperature gradient zone-melting
US2819990A (en) * 1956-04-26 1958-01-14 Bell Telephone Labor Inc Treatment of semiconductive bodies
DE1046783B (de) * 1956-07-13 1958-12-18 Siemens Ag Halbleiteranordnung mit einem schwach dotierten Halbleiterkoerper und einem grossflaechigen p-n-UEbergang
NL233208A (de) * 1957-11-14

Also Published As

Publication number Publication date
DE1208412B (de) 1966-01-05

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