CH388908A - Verfahren zur Herstellung von relativ grossen und dünnen Halbleiter-Einkristallen - Google Patents
Verfahren zur Herstellung von relativ grossen und dünnen Halbleiter-EinkristallenInfo
- Publication number
- CH388908A CH388908A CH6097958A CH6097958A CH388908A CH 388908 A CH388908 A CH 388908A CH 6097958 A CH6097958 A CH 6097958A CH 6097958 A CH6097958 A CH 6097958A CH 388908 A CH388908 A CH 388908A
- Authority
- CH
- Switzerland
- Prior art keywords
- production
- relatively large
- single crystals
- semiconductor single
- thin semiconductor
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thermal Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEE14329A DE1098316B (de) | 1957-06-26 | 1957-06-26 | Verfahren zum Herstellen einkristalliner UEberzuege aus dotierten Halbleitergrundstoffen durch Aufdampfen im Vakuum |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH388908A true CH388908A (de) | 1965-03-15 |
Family
ID=7068771
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH6097958A CH388908A (de) | 1957-06-26 | 1958-06-24 | Verfahren zur Herstellung von relativ grossen und dünnen Halbleiter-Einkristallen |
Country Status (2)
| Country | Link |
|---|---|
| CH (1) | CH388908A (de) |
| DE (1) | DE1098316B (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL278170A (de) * | 1961-05-09 | 1900-01-01 | ||
| US3332796A (en) * | 1961-06-26 | 1967-07-25 | Philips Corp | Preparing nickel ferrite single crystals on a monocrystalline substrate |
| DE1278800B (de) * | 1962-08-27 | 1968-09-26 | Siemens Ag | Verfahren zum schichtweisen kristallinen Vakuumaufdampfen hochreinen sproeden Materials |
| DE1298512B (de) * | 1964-03-13 | 1969-07-03 | Telefunken Patent | Einrichtung zum Aufdampfen einkristalliner Schichten auf Unterlagen |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE514927A (de) * | 1952-01-22 |
-
1957
- 1957-06-26 DE DEE14329A patent/DE1098316B/de active Pending
-
1958
- 1958-06-24 CH CH6097958A patent/CH388908A/de unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE1098316B (de) | 1961-01-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CH440235A (de) | Verfahren zur Herstellung von Diamantkristallen | |
| CH417086A (de) | Verfahren zur Herstellung von Elastomeren | |
| CH364271A (de) | Verfahren zur Herstellung von 7-Triazinylamino-cumarinen | |
| CH442242A (de) | Verfahren zur Herstellung von hochreinen Elementen | |
| CH425738A (de) | Verfahren zur Gewinnung von kristallinem Halbleitermaterial | |
| CH388622A (de) | Verfahren zur Herstellung von Mischpolymerisaten | |
| CH362485A (de) | Verfahren zur Herstellung von Spinndüsen | |
| CH357121A (de) | Verfahren zur Herstellung von Halbleiteranordnungen | |
| CH375001A (de) | Verfahren zur Herstellung von 6-Halogen-steroiden | |
| CH373751A (de) | Verfahren zur Herstellung von Trioxymethylphosphin | |
| CH402421A (de) | Verfahren zur Herstellung von Polybutadienen | |
| CH371791A (de) | Verfahren zur Herstellung von reinstem Silizium | |
| CH364244A (de) | Verfahren zur Herstellung von Halbleitereinkristallen | |
| CH373752A (de) | Verfahren zur Herstellung von Trialkylsiloxy-arylsiloxanen | |
| CH388908A (de) | Verfahren zur Herstellung von relativ grossen und dünnen Halbleiter-Einkristallen | |
| CH375716A (de) | Verfahren zur Herstellung von Sulfamylsaccharinen | |
| CH366555A (de) | Verfahren zur Herstellung von Phenylazoformamiden | |
| CH382296A (de) | Verfahren zur Herstellung von einkristallinem Halbleitermaterial | |
| CH380723A (de) | Verfahren zur Herstellung von 6-Methyl-17a-oxyprogesteron-17-acylaten | |
| CH416572A (de) | Verfahren zur Herstellung von Einkristallen aus Halbleitermaterial | |
| CH374989A (de) | Verfahren zur Herstellung von B-Jonylidenäthyltriaryl-phosphoniumhalogeniden | |
| CH371114A (de) | Verfahren zur Herstellung von 16-Methyl-20-ketosteroiden | |
| CH367496A (de) | Verfahren zur Herstellung der Aminoacetate von gesättigten und ungesättigten 21-Hydroxypregnanen | |
| CH367490A (de) | Verfahren zur Herstellung von 3B-acyloxy-6-methyl-25D-spirost-5-enen | |
| CH367518A (de) | Verfahren zur Herstellung von a-Oxy-b-nitroanthrachinonen |