CH388908A - Verfahren zur Herstellung von relativ grossen und dünnen Halbleiter-Einkristallen - Google Patents

Verfahren zur Herstellung von relativ grossen und dünnen Halbleiter-Einkristallen

Info

Publication number
CH388908A
CH388908A CH6097958A CH6097958A CH388908A CH 388908 A CH388908 A CH 388908A CH 6097958 A CH6097958 A CH 6097958A CH 6097958 A CH6097958 A CH 6097958A CH 388908 A CH388908 A CH 388908A
Authority
CH
Switzerland
Prior art keywords
production
relatively large
single crystals
semiconductor single
thin semiconductor
Prior art date
Application number
CH6097958A
Other languages
English (en)
Inventor
Ferdinand Gilles Ean-Marie
Leon Van Cakenberghe Jean
Original Assignee
Europ Research Associates S A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Europ Research Associates S A filed Critical Europ Research Associates S A
Publication of CH388908A publication Critical patent/CH388908A/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
CH6097958A 1957-06-26 1958-06-24 Verfahren zur Herstellung von relativ grossen und dünnen Halbleiter-Einkristallen CH388908A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEE14329A DE1098316B (de) 1957-06-26 1957-06-26 Verfahren zum Herstellen einkristalliner UEberzuege aus dotierten Halbleitergrundstoffen durch Aufdampfen im Vakuum

Publications (1)

Publication Number Publication Date
CH388908A true CH388908A (de) 1965-03-15

Family

ID=7068771

Family Applications (1)

Application Number Title Priority Date Filing Date
CH6097958A CH388908A (de) 1957-06-26 1958-06-24 Verfahren zur Herstellung von relativ grossen und dünnen Halbleiter-Einkristallen

Country Status (2)

Country Link
CH (1) CH388908A (de)
DE (1) DE1098316B (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL278170A (de) * 1961-05-09 1900-01-01
US3332796A (en) * 1961-06-26 1967-07-25 Philips Corp Preparing nickel ferrite single crystals on a monocrystalline substrate
DE1278800B (de) * 1962-08-27 1968-09-26 Siemens Ag Verfahren zum schichtweisen kristallinen Vakuumaufdampfen hochreinen sproeden Materials
DE1298512B (de) * 1964-03-13 1969-07-03 Telefunken Patent Einrichtung zum Aufdampfen einkristalliner Schichten auf Unterlagen

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE514927A (de) * 1952-01-22

Also Published As

Publication number Publication date
DE1098316B (de) 1961-01-26

Similar Documents

Publication Publication Date Title
CH440235A (de) Verfahren zur Herstellung von Diamantkristallen
CH417086A (de) Verfahren zur Herstellung von Elastomeren
CH364271A (de) Verfahren zur Herstellung von 7-Triazinylamino-cumarinen
CH442242A (de) Verfahren zur Herstellung von hochreinen Elementen
CH425738A (de) Verfahren zur Gewinnung von kristallinem Halbleitermaterial
CH388622A (de) Verfahren zur Herstellung von Mischpolymerisaten
CH362485A (de) Verfahren zur Herstellung von Spinndüsen
CH357121A (de) Verfahren zur Herstellung von Halbleiteranordnungen
CH375001A (de) Verfahren zur Herstellung von 6-Halogen-steroiden
CH373751A (de) Verfahren zur Herstellung von Trioxymethylphosphin
CH402421A (de) Verfahren zur Herstellung von Polybutadienen
CH371791A (de) Verfahren zur Herstellung von reinstem Silizium
CH364244A (de) Verfahren zur Herstellung von Halbleitereinkristallen
CH373752A (de) Verfahren zur Herstellung von Trialkylsiloxy-arylsiloxanen
CH388908A (de) Verfahren zur Herstellung von relativ grossen und dünnen Halbleiter-Einkristallen
CH375716A (de) Verfahren zur Herstellung von Sulfamylsaccharinen
CH366555A (de) Verfahren zur Herstellung von Phenylazoformamiden
CH382296A (de) Verfahren zur Herstellung von einkristallinem Halbleitermaterial
CH375345A (de) Verfahren zur Herstellung von 6-Methyl-17a-oxyprogesteron
CH416572A (de) Verfahren zur Herstellung von Einkristallen aus Halbleitermaterial
CH374989A (de) Verfahren zur Herstellung von B-Jonylidenäthyltriaryl-phosphoniumhalogeniden
CH371114A (de) Verfahren zur Herstellung von 16-Methyl-20-ketosteroiden
CH367496A (de) Verfahren zur Herstellung der Aminoacetate von gesättigten und ungesättigten 21-Hydroxypregnanen
CH367518A (de) Verfahren zur Herstellung von a-Oxy-b-nitroanthrachinonen
CH367490A (de) Verfahren zur Herstellung von 3B-acyloxy-6-methyl-25D-spirost-5-enen