CH388908A - Process for the production of relatively large and thin semiconductor single crystals - Google Patents

Process for the production of relatively large and thin semiconductor single crystals

Info

Publication number
CH388908A
CH388908A CH6097958A CH6097958A CH388908A CH 388908 A CH388908 A CH 388908A CH 6097958 A CH6097958 A CH 6097958A CH 6097958 A CH6097958 A CH 6097958A CH 388908 A CH388908 A CH 388908A
Authority
CH
Switzerland
Prior art keywords
production
relatively large
single crystals
semiconductor single
thin semiconductor
Prior art date
Application number
CH6097958A
Other languages
German (de)
Inventor
Ferdinand Gilles Ean-Marie
Leon Van Cakenberghe Jean
Original Assignee
Europ Research Associates S A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Europ Research Associates S A filed Critical Europ Research Associates S A
Publication of CH388908A publication Critical patent/CH388908A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
CH6097958A 1957-06-26 1958-06-24 Process for the production of relatively large and thin semiconductor single crystals CH388908A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEE14329A DE1098316B (en) 1957-06-26 1957-06-26 Process for the production of single-crystalline coatings from doped semiconductor raw materials by vapor deposition in a vacuum

Publications (1)

Publication Number Publication Date
CH388908A true CH388908A (en) 1965-03-15

Family

ID=7068771

Family Applications (1)

Application Number Title Priority Date Filing Date
CH6097958A CH388908A (en) 1957-06-26 1958-06-24 Process for the production of relatively large and thin semiconductor single crystals

Country Status (2)

Country Link
CH (1) CH388908A (en)
DE (1) DE1098316B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL278170A (en) * 1961-05-09 1900-01-01
US3332796A (en) * 1961-06-26 1967-07-25 Philips Corp Preparing nickel ferrite single crystals on a monocrystalline substrate
DE1278800B (en) * 1962-08-27 1968-09-26 Siemens Ag Process for layer-by-layer crystalline vacuum vapor deposition of highly pure sproed material
DE1298512B (en) * 1964-03-13 1969-07-03 Telefunken Patent Device for vapor deposition of monocrystalline layers on substrates

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE514927A (en) * 1952-01-22

Also Published As

Publication number Publication date
DE1098316B (en) 1961-01-26

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