CH383506A - Verfahren zur Herstellung einer Halbleiteranordnung aus Silizium - Google Patents

Verfahren zur Herstellung einer Halbleiteranordnung aus Silizium

Info

Publication number
CH383506A
CH383506A CH105761A CH105761A CH383506A CH 383506 A CH383506 A CH 383506A CH 105761 A CH105761 A CH 105761A CH 105761 A CH105761 A CH 105761A CH 383506 A CH383506 A CH 383506A
Authority
CH
Switzerland
Prior art keywords
silicon
producing
semiconductor device
semiconductor
Prior art date
Application number
CH105761A
Other languages
German (de)
English (en)
Inventor
Emeis Reimer
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH383506A publication Critical patent/CH383506A/de

Links

Classifications

    • H10W72/30—
    • H10W72/073—
    • H10W72/07336—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49169—Assembling electrical component directly to terminal or elongated conductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12389—All metal or with adjacent metals having variation in thickness
    • Y10T428/12396—Discontinuous surface component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12431—Foil or filament smaller than 6 mils
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12674—Ge- or Si-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12889—Au-base component
CH105761A 1960-03-18 1961-01-30 Verfahren zur Herstellung einer Halbleiteranordnung aus Silizium CH383506A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0067625 1960-03-18

Publications (1)

Publication Number Publication Date
CH383506A true CH383506A (de) 1964-10-31

Family

ID=7499684

Family Applications (1)

Application Number Title Priority Date Filing Date
CH105761A CH383506A (de) 1960-03-18 1961-01-30 Verfahren zur Herstellung einer Halbleiteranordnung aus Silizium

Country Status (5)

Country Link
US (1) US3115694A (enExample)
BE (1) BE601416A (enExample)
CH (1) CH383506A (enExample)
GB (1) GB898119A (enExample)
NL (1) NL261230A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1269249B (de) * 1965-03-22 1968-05-30 Gen Electric Halbleiterbauelement

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3253319A (en) * 1962-09-24 1966-05-31 Gen Motors Corp Rectifier and process for fabricating same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2763822A (en) * 1955-05-10 1956-09-18 Westinghouse Electric Corp Silicon semiconductor devices
US2929751A (en) * 1956-11-15 1960-03-22 Gen Electric Co Ltd Manufacture of semiconductor devices
US2945285A (en) * 1957-06-03 1960-07-19 Sperry Rand Corp Bonding of semiconductor contact electrodes
US3031747A (en) * 1957-12-31 1962-05-01 Tung Sol Electric Inc Method of forming ohmic contact to silicon
US3052572A (en) * 1959-09-21 1962-09-04 Mc Graw Edison Co Selenium rectifiers and their method of manufacture

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1269249B (de) * 1965-03-22 1968-05-30 Gen Electric Halbleiterbauelement

Also Published As

Publication number Publication date
NL261230A (enExample)
GB898119A (en) 1962-06-06
BE601416A (fr) 1961-09-18
US3115694A (en) 1963-12-31

Similar Documents

Publication Publication Date Title
CH380247A (de) Verfahren zur Herstellung einer Halbleiteranordnung aus Silizium
AT261004B (de) Verfahren zur Herstellung einer Halbleiteranordnung
CH409887A (de) Verfahren zur Herstellung von Halbleitervorrichtungen aus monokristallinen Halbleiterelementen
CH367896A (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH347268A (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH338906A (de) Verfahren zur Herstellung einer Halbleitervorrichtung und gemäss diesem Verfahren hergestellte Halbleitervorrichtung
CH381329A (de) Verfahren zur Herstellung einer Halbleiteranordnung
CH391111A (de) Verfahren zur Herstellung einer Halbleiteranordnung
CH403991A (de) Verfahren zur Herstellung einer Halbleitervorrichtung
AT256938B (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH395349A (de) Verfahren zur Herstellung einer Halbleiteranordnung
CH423999A (de) Verfahren zur Herstellung einer Halbleiteranordnung
CH418466A (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH413801A (de) Verfahren zur Erzeugung einer epitaxialen Halbleiterschicht
CH399598A (de) Verfahren zur Herstellung einer Halbleiteranordnung
AT261676B (de) Verfahren zur Herstellung eines Bodens für eine Hülle einer Halbleitervorrichtung
CH372385A (de) Verfahren zur Herstellung einer Halbleiteranordnung aus Silizium
CH368240A (de) Verfahren zur Herstellung einer Halbleiteranordnung
CH383506A (de) Verfahren zur Herstellung einer Halbleiteranordnung aus Silizium
CH429672A (de) Verfahren zur Herstellung einer Halbleiteranordnung
AT299309B (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH350722A (de) Verfahren zur Herstellung einer Halbleiter-Vorrichtung
CH437535A (de) Verfahren zur Herstellung einer Halbleiteranordnung
CH382300A (de) Verfahren zur Herstellung einer Halbleiteranordnung
CH362751A (de) Verfahren zur Herstellung einer Halbleitervorrichtung