CH357121A - Verfahren zur Herstellung von Halbleiteranordnungen - Google Patents

Verfahren zur Herstellung von Halbleiteranordnungen

Info

Publication number
CH357121A
CH357121A CH357121DA CH357121A CH 357121 A CH357121 A CH 357121A CH 357121D A CH357121D A CH 357121DA CH 357121 A CH357121 A CH 357121A
Authority
CH
Switzerland
Prior art keywords
production
semiconductor devices
semiconductor
devices
Prior art date
Application number
Other languages
German (de)
English (en)
Inventor
F Losco Ezekiel
Strull Gene
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of CH357121A publication Critical patent/CH357121A/de

Links

Classifications

    • H10W99/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P50/642—
    • H10P52/00—
    • H10P95/00—
    • H10W72/5524—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate
CH357121D 1956-03-05 1957-07-22 Verfahren zur Herstellung von Halbleiteranordnungen CH357121A (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US569657A US2929750A (en) 1956-03-05 1956-03-05 Power transistors and process for making the same
US599373A US2909453A (en) 1956-03-05 1956-07-23 Process for producing semiconductor devices
DEW22152A DE1093484B (de) 1956-03-05 1957-10-31 Verfahren zur Herstellung von Halbleiterbauelementen, insbesondere pnp- oder npn-Leistungstransistoren

Publications (1)

Publication Number Publication Date
CH357121A true CH357121A (de) 1961-09-30

Family

ID=27213398

Family Applications (2)

Application Number Title Priority Date Filing Date
CH357121D CH357121A (de) 1956-03-05 1957-07-22 Verfahren zur Herstellung von Halbleiteranordnungen
CH362150D CH362150A (de) 1956-03-05 1957-12-06 Verfahren zur Herstellung von Halbleiterbauelementen und nach diesem Verfahren hergestelltes Halbleiterbauelement

Family Applications After (1)

Application Number Title Priority Date Filing Date
CH362150D CH362150A (de) 1956-03-05 1957-12-06 Verfahren zur Herstellung von Halbleiterbauelementen und nach diesem Verfahren hergestelltes Halbleiterbauelement

Country Status (5)

Country Link
US (2) US2929750A (index.php)
BE (2) BE562490A (index.php)
CH (2) CH357121A (index.php)
DE (2) DE1061447B (index.php)
NL (1) NL222571A (index.php)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL229074A (index.php) * 1958-06-26
FR1223418A (fr) * 1959-01-07 1960-06-16 Dispositifs à semi-conducteur à deux bornes à résistance différentielle négative
US3099588A (en) * 1959-03-11 1963-07-30 Westinghouse Electric Corp Formation of semiconductor transition regions by alloy vaporization and deposition
GB955093A (index.php) * 1959-07-31
US3133336A (en) * 1959-12-30 1964-05-19 Ibm Semiconductor device fabrication
US3092522A (en) * 1960-04-27 1963-06-04 Motorola Inc Method and apparatus for use in the manufacture of transistors
NL265823A (index.php) * 1960-06-13
US3171068A (en) * 1960-10-19 1965-02-23 Merck & Co Inc Semiconductor diodes
US3217379A (en) * 1960-12-09 1965-11-16 Texas Instruments Inc Method for forming pn junctions in indium antimonide with special application to infrared detection
NL278654A (index.php) * 1961-06-08
US3134935A (en) * 1961-09-06 1964-05-26 Schauer Mfg Corp Semi-conductor device comprising two elongated spaced apart bus electrodes
US3305710A (en) * 1962-03-29 1967-02-21 Nippon Telegraph & Telephone Variable-capacitance point contact diode
NL298286A (index.php) * 1962-09-24
US3268309A (en) * 1964-03-30 1966-08-23 Gen Electric Semiconductor contact means
DE2019251A1 (de) * 1970-04-21 1971-11-04 Siemens Ag Verfahren zum Eindiffundieren oder Einlegieren eines Fremdstoffes in einen Halbleiterkoerper
US3869322A (en) * 1973-10-15 1975-03-04 Ibm Automatic P-N junction formation during growth of a heterojunction
US8709870B2 (en) * 2009-08-06 2014-04-29 Maxim Integrated Products, Inc. Method of forming solderable side-surface terminals of quad no-lead frame (QFN) integrated circuit packages

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2561411A (en) * 1950-03-08 1951-07-24 Bell Telephone Labor Inc Semiconductor signal translating device
NL91691C (index.php) * 1952-02-07
US2695852A (en) * 1952-02-15 1954-11-30 Bell Telephone Labor Inc Fabrication of semiconductors for signal translating devices
US2842723A (en) * 1952-04-15 1958-07-08 Licentia Gmbh Controllable asymmetric electrical conductor systems
BE520380A (index.php) * 1952-06-02
US2742383A (en) * 1952-08-09 1956-04-17 Hughes Aircraft Co Germanium junction-type semiconductor devices
NL180750B (nl) * 1952-08-20 Bristol Myers Co Werkwijze voor het bereiden van een 7-amino-3-cefem-4-carbonzuur derivaat door een 7-acylamino-3-cefem-4-carbonzuur derivaat om te zetten.
NL182212B (nl) * 1952-10-22 Nemag Nv Grijper.
US2705767A (en) * 1952-11-18 1955-04-05 Gen Electric P-n junction transistor
GB753133A (en) * 1953-07-22 1956-07-18 Standard Telephones Cables Ltd Improvements in or relating to electric semi-conducting devices
US2802159A (en) * 1953-10-20 1957-08-06 Hughes Aircraft Co Junction-type semiconductor devices
GB774388A (en) * 1954-01-28 1957-05-08 Marconi Wireless Telegraph Co Improvements in or relating to semi-conducting amplifiers
US2829992A (en) * 1954-02-02 1958-04-08 Hughes Aircraft Co Fused junction semiconductor devices and method of making same
US2736847A (en) * 1954-05-10 1956-02-28 Hughes Aircraft Co Fused-junction silicon diodes
US2846626A (en) * 1954-07-28 1958-08-05 Raytheon Mfg Co Junction transistors and methods of forming them
DE1073111B (de) * 1954-12-02 1960-01-14 Siemens Schuckertwerke Aktiengesellschaft Berlin und Erlangen Verfahren zur Herstellung eines Flachentransistors mit einer Oberflachenschicht erhöhter Storstellenkonzentration an den freien Stellen zwischen den Elektroden an einem einkristallmen Halbleiterkörper
US2885609A (en) * 1955-01-31 1959-05-05 Philco Corp Semiconductive device and method for the fabrication thereof
US2845374A (en) * 1955-05-23 1958-07-29 Texas Instruments Inc Semiconductor unit and method of making same
NL209275A (index.php) * 1955-09-02
US2879188A (en) * 1956-03-05 1959-03-24 Westinghouse Electric Corp Processes for making transistors
BE557842A (index.php) * 1956-06-01

Also Published As

Publication number Publication date
CH362150A (de) 1962-05-31
DE1093484B (de) 1960-11-24
BE562491A (index.php) 1900-01-01
DE1061447B (de) 1959-07-16
US2909453A (en) 1959-10-20
NL222571A (index.php) 1900-01-01
BE562490A (index.php) 1900-01-01
US2929750A (en) 1960-03-22

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