BE562491A - - Google Patents

Info

Publication number
BE562491A
BE562491A BE562491DA BE562491A BE 562491 A BE562491 A BE 562491A BE 562491D A BE562491D A BE 562491DA BE 562491 A BE562491 A BE 562491A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of BE562491A publication Critical patent/BE562491A/xx

Links

Classifications

    • H10W99/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P50/642—
    • H10P52/00—
    • H10P95/00—
    • H10W72/5524—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate
BE562491D 1956-03-05 BE562491A (index.php)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US569657A US2929750A (en) 1956-03-05 1956-03-05 Power transistors and process for making the same
US599373A US2909453A (en) 1956-03-05 1956-07-23 Process for producing semiconductor devices
DEW22152A DE1093484B (de) 1956-03-05 1957-10-31 Verfahren zur Herstellung von Halbleiterbauelementen, insbesondere pnp- oder npn-Leistungstransistoren

Publications (1)

Publication Number Publication Date
BE562491A true BE562491A (index.php) 1900-01-01

Family

ID=27213398

Family Applications (2)

Application Number Title Priority Date Filing Date
BE562491D BE562491A (index.php) 1956-03-05
BE562490D BE562490A (index.php) 1956-03-05

Family Applications After (1)

Application Number Title Priority Date Filing Date
BE562490D BE562490A (index.php) 1956-03-05

Country Status (5)

Country Link
US (2) US2929750A (index.php)
BE (2) BE562490A (index.php)
CH (2) CH357121A (index.php)
DE (2) DE1061447B (index.php)
NL (1) NL222571A (index.php)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL229074A (index.php) * 1958-06-26
FR1223418A (fr) * 1959-01-07 1960-06-16 Dispositifs à semi-conducteur à deux bornes à résistance différentielle négative
US3099588A (en) * 1959-03-11 1963-07-30 Westinghouse Electric Corp Formation of semiconductor transition regions by alloy vaporization and deposition
GB955093A (index.php) * 1959-07-31
US3133336A (en) * 1959-12-30 1964-05-19 Ibm Semiconductor device fabrication
US3092522A (en) * 1960-04-27 1963-06-04 Motorola Inc Method and apparatus for use in the manufacture of transistors
NL265823A (index.php) * 1960-06-13
US3171068A (en) * 1960-10-19 1965-02-23 Merck & Co Inc Semiconductor diodes
US3217379A (en) * 1960-12-09 1965-11-16 Texas Instruments Inc Method for forming pn junctions in indium antimonide with special application to infrared detection
NL278654A (index.php) * 1961-06-08
US3134935A (en) * 1961-09-06 1964-05-26 Schauer Mfg Corp Semi-conductor device comprising two elongated spaced apart bus electrodes
US3305710A (en) * 1962-03-29 1967-02-21 Nippon Telegraph & Telephone Variable-capacitance point contact diode
NL298286A (index.php) * 1962-09-24
US3268309A (en) * 1964-03-30 1966-08-23 Gen Electric Semiconductor contact means
DE2019251A1 (de) * 1970-04-21 1971-11-04 Siemens Ag Verfahren zum Eindiffundieren oder Einlegieren eines Fremdstoffes in einen Halbleiterkoerper
US3869322A (en) * 1973-10-15 1975-03-04 Ibm Automatic P-N junction formation during growth of a heterojunction
US8709870B2 (en) * 2009-08-06 2014-04-29 Maxim Integrated Products, Inc. Method of forming solderable side-surface terminals of quad no-lead frame (QFN) integrated circuit packages

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2561411A (en) * 1950-03-08 1951-07-24 Bell Telephone Labor Inc Semiconductor signal translating device
NL91691C (index.php) * 1952-02-07
US2695852A (en) * 1952-02-15 1954-11-30 Bell Telephone Labor Inc Fabrication of semiconductors for signal translating devices
US2842723A (en) * 1952-04-15 1958-07-08 Licentia Gmbh Controllable asymmetric electrical conductor systems
BE520380A (index.php) * 1952-06-02
US2742383A (en) * 1952-08-09 1956-04-17 Hughes Aircraft Co Germanium junction-type semiconductor devices
NL180750B (nl) * 1952-08-20 Bristol Myers Co Werkwijze voor het bereiden van een 7-amino-3-cefem-4-carbonzuur derivaat door een 7-acylamino-3-cefem-4-carbonzuur derivaat om te zetten.
NL182212B (nl) * 1952-10-22 Nemag Nv Grijper.
US2705767A (en) * 1952-11-18 1955-04-05 Gen Electric P-n junction transistor
GB753133A (en) * 1953-07-22 1956-07-18 Standard Telephones Cables Ltd Improvements in or relating to electric semi-conducting devices
US2802159A (en) * 1953-10-20 1957-08-06 Hughes Aircraft Co Junction-type semiconductor devices
GB774388A (en) * 1954-01-28 1957-05-08 Marconi Wireless Telegraph Co Improvements in or relating to semi-conducting amplifiers
US2829992A (en) * 1954-02-02 1958-04-08 Hughes Aircraft Co Fused junction semiconductor devices and method of making same
US2736847A (en) * 1954-05-10 1956-02-28 Hughes Aircraft Co Fused-junction silicon diodes
US2846626A (en) * 1954-07-28 1958-08-05 Raytheon Mfg Co Junction transistors and methods of forming them
DE1073111B (de) * 1954-12-02 1960-01-14 Siemens Schuckertwerke Aktiengesellschaft Berlin und Erlangen Verfahren zur Herstellung eines Flachentransistors mit einer Oberflachenschicht erhöhter Storstellenkonzentration an den freien Stellen zwischen den Elektroden an einem einkristallmen Halbleiterkörper
US2885609A (en) * 1955-01-31 1959-05-05 Philco Corp Semiconductive device and method for the fabrication thereof
US2845374A (en) * 1955-05-23 1958-07-29 Texas Instruments Inc Semiconductor unit and method of making same
NL209275A (index.php) * 1955-09-02
US2879188A (en) * 1956-03-05 1959-03-24 Westinghouse Electric Corp Processes for making transistors
BE557842A (index.php) * 1956-06-01

Also Published As

Publication number Publication date
CH362150A (de) 1962-05-31
DE1093484B (de) 1960-11-24
DE1061447B (de) 1959-07-16
US2909453A (en) 1959-10-20
NL222571A (index.php) 1900-01-01
BE562490A (index.php) 1900-01-01
CH357121A (de) 1961-09-30
US2929750A (en) 1960-03-22

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