CH346617A - Verfahren zur Herstellung einer Halbleiteranordnung mit mehreren Übergängen zwischen Zonen verschiedenen Leitungstyps - Google Patents

Verfahren zur Herstellung einer Halbleiteranordnung mit mehreren Übergängen zwischen Zonen verschiedenen Leitungstyps

Info

Publication number
CH346617A
CH346617A CH346617DA CH346617A CH 346617 A CH346617 A CH 346617A CH 346617D A CH346617D A CH 346617DA CH 346617 A CH346617 A CH 346617A
Authority
CH
Switzerland
Prior art keywords
junctions
zones
production
conductivity types
different conductivity
Prior art date
Application number
Other languages
English (en)
Inventor
Heinz Dr Henker
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH346617A publication Critical patent/CH346617A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System further characterised by the doping material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
CH346617D 1954-08-05 1956-05-02 Verfahren zur Herstellung einer Halbleiteranordnung mit mehreren Übergängen zwischen Zonen verschiedenen Leitungstyps CH346617A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES40325A DE1036393B (de) 1954-08-05 1954-08-05 Verfahren zur Herstellung von zwei p-n-UEbergaengen in Halbleiterkoerpern, z. B. Flaechentransistoren
DES44639A DE1035787B (de) 1954-08-05 1955-07-06 Verfahren zur Herstellung einer Halbleiteranordnung mit mehreren UEbergaengen, z. B.Flaechen-Transistoren

Publications (1)

Publication Number Publication Date
CH346617A true CH346617A (de) 1960-05-31

Family

ID=25995171

Family Applications (1)

Application Number Title Priority Date Filing Date
CH346617D CH346617A (de) 1954-08-05 1956-05-02 Verfahren zur Herstellung einer Halbleiteranordnung mit mehreren Übergängen zwischen Zonen verschiedenen Leitungstyps

Country Status (4)

Country Link
CH (1) CH346617A (de)
DE (2) DE1036393B (de)
FR (2) FR1131582A (de)
GB (1) GB841195A (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL276978A (de) * 1956-09-05
US3001895A (en) * 1957-06-06 1961-09-26 Ibm Semiconductor devices and method of making same
DE1184869B (de) * 1957-11-29 1965-01-07 Comp Generale Electricite Gesteuerter Halbleiter-Leistungsgleichrichter mit vier Zonen abwechselnden Leitungstyps
NL242556A (de) * 1958-08-27
BE569934A (de) * 1958-12-18
DE1093021B (de) * 1959-01-24 1960-11-17 Telefunken Gmbh Pnip- bzw. npin-Drifttransistor fuer hohe Frequenzen
DE1104070B (de) * 1959-01-27 1961-04-06 Siemens Ag Verfahren zur Herstellung einer eine eigenleitende oder nahezu eigenleitende Zone aufweisenden Halbleitertriode
NL247735A (de) * 1959-01-28
US2937114A (en) * 1959-05-29 1960-05-17 Shockley Transistor Corp Semiconductive device and method
DE1124155B (de) * 1959-07-04 1962-02-22 Telefunken Patent Verfahren zur Herstellung eines nipin-Transistors
DE1208012C2 (de) * 1959-08-06 1966-10-20 Telefunken Patent Flaechentransistor fuer hohe Frequenzen mit einer Begrenzung der Emission des Emitters und Verfahren zum Herstellen
NL256979A (de) * 1959-10-19
NL259311A (de) * 1959-12-21
NL270684A (de) * 1960-11-01
NL274818A (de) * 1961-02-20
DE1258983B (de) * 1961-12-05 1968-01-18 Telefunken Patent Verfahren zum Herstellen einer Halbleiteranordnung mit epitaktischer Schicht und mindestens einem pn-UEbergang
NL290930A (de) * 1963-03-29
US3312881A (en) * 1963-11-08 1967-04-04 Ibm Transistor with limited area basecollector junction

Also Published As

Publication number Publication date
DE1036393B (de) 1958-08-14
DE1035787B (de) 1958-08-07
FR1131582A (fr) 1957-02-25
FR70726E (fr) 1959-07-10
GB841195A (en) 1960-07-13

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