CH359790A - Verfahren zur Herstellung einer Zonen verschiedenen Leitfähigkeitstyps aufweisenden Halbleiteranordnung - Google Patents
Verfahren zur Herstellung einer Zonen verschiedenen Leitfähigkeitstyps aufweisenden HalbleiteranordnungInfo
- Publication number
- CH359790A CH359790A CH359790DA CH359790A CH 359790 A CH359790 A CH 359790A CH 359790D A CH359790D A CH 359790DA CH 359790 A CH359790 A CH 359790A
- Authority
- CH
- Switzerland
- Prior art keywords
- zones
- production
- conductivity types
- different conductivity
- semiconductor arrangement
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/16—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a liquid phase
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/50—Alloying conductive materials with semiconductor bodies
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
- Electron Beam Exposure (AREA)
- Materials For Photolithography (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US657355A US2943006A (en) | 1957-05-06 | 1957-05-06 | Diffused transistors and processes for making the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH359790A true CH359790A (de) | 1962-01-31 |
Family
ID=24636825
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH359790D CH359790A (de) | 1957-05-06 | 1958-05-06 | Verfahren zur Herstellung einer Zonen verschiedenen Leitfähigkeitstyps aufweisenden Halbleiteranordnung |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US2943006A (de) |
| CH (1) | CH359790A (de) |
| DE (1) | DE1414538A1 (de) |
| FR (1) | FR1206714A (de) |
| GB (1) | GB865471A (de) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3007090A (en) * | 1957-09-04 | 1961-10-31 | Ibm | Back resistance control for junction semiconductor devices |
| US3065392A (en) * | 1958-02-07 | 1962-11-20 | Rca Corp | Semiconductor devices |
| US3154692A (en) * | 1960-01-08 | 1964-10-27 | Clevite Corp | Voltage regulating semiconductor device |
| NL263771A (de) * | 1960-04-26 | |||
| NL257150A (de) * | 1960-10-22 | 1900-01-01 | ||
| DE1175797B (de) * | 1960-12-22 | 1964-08-13 | Standard Elektrik Lorenz Ag | Verfahren zum Herstellen von elektrischen Halb-leiterbauelementen |
| US3188244A (en) * | 1961-04-24 | 1965-06-08 | Tektronix Inc | Method of forming pn junction in semiconductor material |
| US3258371A (en) * | 1962-02-01 | 1966-06-28 | Semiconductor Res Found | Silicon semiconductor device for high frequency, and method of its manufacture |
| US3307088A (en) * | 1962-03-13 | 1967-02-28 | Fujikawa Kyoichi | Silver-lead alloy contacts containing dopants for semiconductors |
| US3268375A (en) * | 1962-05-22 | 1966-08-23 | Gordon J Ratcliff | Alloy-diffusion process for fabricating germanium transistors |
| US3257589A (en) * | 1962-05-22 | 1966-06-21 | Texas Instruments Inc | Transistors and the fabrication thereof |
| CH396228A (de) * | 1962-05-29 | 1965-07-31 | Siemens Ag | Verfahren zum Erzeugen einer hochdotierten p-leitenden Zone in einem Halbleiterkörper, insbesondere aus Silizium |
| US3309244A (en) * | 1963-03-22 | 1967-03-14 | Motorola Inc | Alloy-diffused method for producing semiconductor devices |
| US3513041A (en) * | 1967-06-19 | 1970-05-19 | Motorola Inc | Fabrication of a germanium diffused base power transistor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1103544A (fr) * | 1953-05-25 | 1955-11-03 | Rca Corp | Dispositifs semi-conducteurs, et procédé de fabrication de ceux-ci |
-
1957
- 1957-05-06 US US657355A patent/US2943006A/en not_active Expired - Lifetime
-
1958
- 1958-05-02 GB GB14046/58A patent/GB865471A/en not_active Expired
- 1958-05-02 DE DE19581414538 patent/DE1414538A1/de active Pending
- 1958-05-05 FR FR1206714D patent/FR1206714A/fr not_active Expired
- 1958-05-06 CH CH359790D patent/CH359790A/de unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB865471A (en) | 1961-04-19 |
| FR1206714A (fr) | 1960-02-11 |
| US2943006A (en) | 1960-06-28 |
| DE1414538A1 (de) | 1968-12-19 |
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