CH213494A - Sperrschichtzelle, bei der eine der Elektroden aus einer Schicht eines Materials mit niedrigem Schmelzpunkt besteht. - Google Patents
Sperrschichtzelle, bei der eine der Elektroden aus einer Schicht eines Materials mit niedrigem Schmelzpunkt besteht.Info
- Publication number
- CH213494A CH213494A CH213494DA CH213494A CH 213494 A CH213494 A CH 213494A CH 213494D A CH213494D A CH 213494DA CH 213494 A CH213494 A CH 213494A
- Authority
- CH
- Switzerland
- Prior art keywords
- layer
- melting point
- low melting
- barrier
- foil
- Prior art date
Links
- 239000000463 material Substances 0.000 title claims description 27
- 238000002844 melting Methods 0.000 title claims description 25
- 230000008018 melting Effects 0.000 title claims description 25
- 210000004027 cell Anatomy 0.000 claims description 37
- 239000011888 foil Substances 0.000 claims description 17
- 230000004888 barrier function Effects 0.000 claims description 16
- 210000002457 barrier cell Anatomy 0.000 claims description 10
- 210000000056 organ Anatomy 0.000 claims description 9
- 230000001419 dependent effect Effects 0.000 claims description 5
- 239000007772 electrode material Substances 0.000 claims description 5
- 230000004927 fusion Effects 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 4
- 239000004922 lacquer Substances 0.000 claims description 3
- 229910000925 Cd alloy Inorganic materials 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 230000000903 blocking effect Effects 0.000 claims description 2
- WALHTWGBMUZYGN-UHFFFAOYSA-N [Sn].[Cd].[Bi] Chemical compound [Sn].[Cd].[Bi] WALHTWGBMUZYGN-UHFFFAOYSA-N 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 description 12
- 239000000956 alloy Substances 0.000 description 12
- 230000008901 benefit Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000005476 soldering Methods 0.000 description 5
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000011669 selenium Substances 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
- H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Connection Of Batteries Or Terminals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE213494X | 1938-12-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH213494A true CH213494A (de) | 1941-02-15 |
Family
ID=5813517
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH213494D CH213494A (de) | 1938-12-12 | 1939-12-07 | Sperrschichtzelle, bei der eine der Elektroden aus einer Schicht eines Materials mit niedrigem Schmelzpunkt besteht. |
Country Status (2)
| Country | Link |
|---|---|
| CH (1) | CH213494A (enrdf_load_stackoverflow) |
| SE (1) | SE108283C1 (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1008415B (de) * | 1952-11-17 | 1957-05-16 | Siemens Ag | Verfahren zur Herstellung von Trockengleichrichterscheiben, insbesondere fuer Selengleichrichter |
| DE972128C (de) * | 1951-06-29 | 1959-05-27 | Siemens Ag | Anordnung zur Stromabnahme bei Trockengleichrichtern |
| DE1063276B (de) * | 1957-08-30 | 1959-08-13 | Walter Brandt G M B H | Druckfreier Kontaktstreifen fuer Selen-Gleichrichter |
| DE975319C (de) * | 1947-09-20 | 1961-11-09 | Asea Ab | Trockengleichrichterplatte |
| DE1228002B (de) * | 1961-03-07 | 1966-11-03 | Gerhard Gille Dr Ing | Trockengleichrichter |
-
1939
- 1939-12-07 CH CH213494D patent/CH213494A/de unknown
- 1939-12-09 SE SE626039A patent/SE108283C1/xx unknown
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE975319C (de) * | 1947-09-20 | 1961-11-09 | Asea Ab | Trockengleichrichterplatte |
| DE972128C (de) * | 1951-06-29 | 1959-05-27 | Siemens Ag | Anordnung zur Stromabnahme bei Trockengleichrichtern |
| DE1008415B (de) * | 1952-11-17 | 1957-05-16 | Siemens Ag | Verfahren zur Herstellung von Trockengleichrichterscheiben, insbesondere fuer Selengleichrichter |
| DE1063276B (de) * | 1957-08-30 | 1959-08-13 | Walter Brandt G M B H | Druckfreier Kontaktstreifen fuer Selen-Gleichrichter |
| DE1228002B (de) * | 1961-03-07 | 1966-11-03 | Gerhard Gille Dr Ing | Trockengleichrichter |
Also Published As
| Publication number | Publication date |
|---|---|
| SE108283C1 (enrdf_load_stackoverflow) | 1943-08-24 |
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