CA961583A - Metal oxide semiconductor field effect transistor - Google Patents

Metal oxide semiconductor field effect transistor

Info

Publication number
CA961583A
CA961583A CA140,830A CA140830A CA961583A CA 961583 A CA961583 A CA 961583A CA 140830 A CA140830 A CA 140830A CA 961583 A CA961583 A CA 961583A
Authority
CA
Canada
Prior art keywords
metal oxide
oxide semiconductor
field effect
effect transistor
semiconductor field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA140,830A
Other languages
English (en)
Other versions
CA140830S (en
Inventor
Shuichi Sato
Tadanori Yamaguchi
Teruaki Aoki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of CA961583A publication Critical patent/CA961583A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
CA140,830A 1971-04-29 1972-04-28 Metal oxide semiconductor field effect transistor Expired CA961583A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP46028418A JPS511553B1 (en:Method) 1971-04-29 1971-04-29

Publications (1)

Publication Number Publication Date
CA961583A true CA961583A (en) 1975-01-21

Family

ID=12248091

Family Applications (1)

Application Number Title Priority Date Filing Date
CA140,830A Expired CA961583A (en) 1971-04-29 1972-04-28 Metal oxide semiconductor field effect transistor

Country Status (7)

Country Link
JP (1) JPS511553B1 (en:Method)
CA (1) CA961583A (en:Method)
DE (1) DE2221128A1 (en:Method)
FR (1) FR2135198B1 (en:Method)
GB (1) GB1389298A (en:Method)
IT (1) IT953877B (en:Method)
NL (1) NL7205697A (en:Method)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT8223557U1 (it) * 1982-11-26 1984-05-26 Faesite Spa Manufatti costituiti da fibre di legno incollate, riscaldate e pressate

Also Published As

Publication number Publication date
JPS511553B1 (en:Method) 1976-01-19
FR2135198B1 (en:Method) 1980-02-01
FR2135198A1 (en:Method) 1972-12-15
GB1389298A (en) 1975-04-03
NL7205697A (en:Method) 1972-10-31
IT953877B (it) 1973-08-10
DE2221128A1 (de) 1972-11-09

Similar Documents

Publication Publication Date Title
CA965188A (en) Field effect transistor
CA963175A (en) Semiconductor device-metal oxide varistor-heat sink assembly
CA933671A (en) Semiconductor device
AU473052B2 (en) Semiconductor device
AU453010B2 (en) Insulated gate semiconductor device
CA963174A (en) Semiconductor device
AU463708B2 (en) Semiconductor device
CA961583A (en) Metal oxide semiconductor field effect transistor
AU474165B2 (en) Semiconductor device
AU463429B2 (en) Field effect transistor ina semiconductor body
CA824838A (en) Magnetic-field-sensing metal oxide semiconductor field-effect transistors
AU465323B2 (en) Semi-conductor devices
CA921176A (en) Shielded metal oxide semiconductor
CA871944A (en) Field effect semiconductor devices
CA875237A (en) Semiconductor pressure-sensitive transistor
AU439449B2 (en) Field effect semiconductor device
CA877582A (en) Insulated gate semiconductor device
CA887875A (en) Field effect transistor
CA886239A (en) Field effect transistor
CA885691A (en) Field effect transistor
CA878172A (en) Field effect transistor
CA865339A (en) Semiconductor devices
CA862334A (en) Schottky-diode-clamped transistor and fabrication thereof
CA886238A (en) Semiconductor arrangements
AU3855372A (en) Field effect semiconductor device