JPS511553B1 - - Google Patents

Info

Publication number
JPS511553B1
JPS511553B1 JP46028418A JP2841871A JPS511553B1 JP S511553 B1 JPS511553 B1 JP S511553B1 JP 46028418 A JP46028418 A JP 46028418A JP 2841871 A JP2841871 A JP 2841871A JP S511553 B1 JPS511553 B1 JP S511553B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP46028418A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP46028418A priority Critical patent/JPS511553B1/ja
Priority to GB1916172A priority patent/GB1389298A/en
Priority to NL7205697A priority patent/NL7205697A/xx
Priority to DE19722221128 priority patent/DE2221128A1/de
Priority to FR7215364A priority patent/FR2135198B1/fr
Priority to CA140,830A priority patent/CA961583A/en
Priority to IT23756/72A priority patent/IT953877B/it
Publication of JPS511553B1 publication Critical patent/JPS511553B1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/60Electrodes characterised by their materials
    • H10D64/66Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/69IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/60Electrodes characterised by their materials
    • H10D64/66Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
JP46028418A 1971-04-29 1971-04-29 Pending JPS511553B1 (en:Method)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP46028418A JPS511553B1 (en:Method) 1971-04-29 1971-04-29
GB1916172A GB1389298A (en) 1971-04-29 1972-04-25 Insulated gate field effect transistors
NL7205697A NL7205697A (en:Method) 1971-04-29 1972-04-27
DE19722221128 DE2221128A1 (de) 1971-04-29 1972-04-28 Feldeffekttransistor
FR7215364A FR2135198B1 (en:Method) 1971-04-29 1972-04-28
CA140,830A CA961583A (en) 1971-04-29 1972-04-28 Metal oxide semiconductor field effect transistor
IT23756/72A IT953877B (it) 1971-04-29 1972-04-29 Transistore ad effetto di campo del tipo a metallo ossido semicon duttore

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP46028418A JPS511553B1 (en:Method) 1971-04-29 1971-04-29

Publications (1)

Publication Number Publication Date
JPS511553B1 true JPS511553B1 (en:Method) 1976-01-19

Family

ID=12248091

Family Applications (1)

Application Number Title Priority Date Filing Date
JP46028418A Pending JPS511553B1 (en:Method) 1971-04-29 1971-04-29

Country Status (7)

Country Link
JP (1) JPS511553B1 (en:Method)
CA (1) CA961583A (en:Method)
DE (1) DE2221128A1 (en:Method)
FR (1) FR2135198B1 (en:Method)
GB (1) GB1389298A (en:Method)
IT (1) IT953877B (en:Method)
NL (1) NL7205697A (en:Method)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT8223557U1 (it) * 1982-11-26 1984-05-26 Faesite Spa Manufatti costituiti da fibre di legno incollate, riscaldate e pressate

Also Published As

Publication number Publication date
FR2135198B1 (en:Method) 1980-02-01
FR2135198A1 (en:Method) 1972-12-15
GB1389298A (en) 1975-04-03
NL7205697A (en:Method) 1972-10-31
IT953877B (it) 1973-08-10
CA961583A (en) 1975-01-21
DE2221128A1 (de) 1972-11-09

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