CA2898598C - Superconducting device with at least one enclosure - Google Patents
Superconducting device with at least one enclosure Download PDFInfo
- Publication number
- CA2898598C CA2898598C CA2898598A CA2898598A CA2898598C CA 2898598 C CA2898598 C CA 2898598C CA 2898598 A CA2898598 A CA 2898598A CA 2898598 A CA2898598 A CA 2898598A CA 2898598 C CA2898598 C CA 2898598C
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- Prior art keywords
- superconducting
- substrate
- cavity resonator
- enclosure
- trough
- Prior art date
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- 239000000758 substrate Substances 0.000 claims abstract description 235
- 238000000034 method Methods 0.000 claims abstract description 69
- 239000000463 material Substances 0.000 claims abstract description 57
- 238000004519 manufacturing process Methods 0.000 claims abstract description 16
- 239000002096 quantum dot Substances 0.000 claims description 75
- 230000005670 electromagnetic radiation Effects 0.000 claims description 30
- 239000004065 semiconductor Substances 0.000 claims description 25
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 17
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 238000004377 microelectronic Methods 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 238000005530 etching Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 230000008901 benefit Effects 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 5
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000010365 information processing Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000010146 3D printing Methods 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- 239000010955 niobium Substances 0.000 description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 3
- 229910052702 rhenium Inorganic materials 0.000 description 3
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000006880 cross-coupling reaction Methods 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000005233 quantum mechanics related processes and functions Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- VLCQZHSMCYCDJL-UHFFFAOYSA-N tribenuron methyl Chemical compound COC(=O)C1=CC=CC=C1S(=O)(=O)NC(=O)N(C)C1=NC(C)=NC(OC)=N1 VLCQZHSMCYCDJL-UHFFFAOYSA-N 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
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- 229910000679 solder Inorganic materials 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/20—Permanent superconducting devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N69/00—Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group H10N60/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/805—Constructional details for Josephson-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/81—Containers; Mountings
- H10N60/815—Containers; Mountings for Josephson-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/83—Element shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
- H10N60/12—Josephson-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
- Waveguides (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Data Mining & Analysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Evolutionary Computation (AREA)
- Computational Mathematics (AREA)
- Mathematical Analysis (AREA)
- Mathematical Optimization (AREA)
- Pure & Applied Mathematics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Software Systems (AREA)
- Artificial Intelligence (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361754298P | 2013-01-18 | 2013-01-18 | |
| US61/754,298 | 2013-01-18 | ||
| PCT/US2014/012073 WO2014163728A2 (en) | 2013-01-18 | 2014-01-17 | Superconducting device with at least one enclosure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2898598A1 CA2898598A1 (en) | 2014-10-09 |
| CA2898598C true CA2898598C (en) | 2023-01-03 |
Family
ID=51659290
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA2898598A Active CA2898598C (en) | 2013-01-18 | 2014-01-17 | Superconducting device with at least one enclosure |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10424711B2 (enExample) |
| EP (1) | EP2946413B1 (enExample) |
| JP (2) | JP6461009B2 (enExample) |
| KR (1) | KR102178986B1 (enExample) |
| CA (1) | CA2898598C (enExample) |
| SG (1) | SG11201505616YA (enExample) |
| WO (1) | WO2014163728A2 (enExample) |
Families Citing this family (43)
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|---|---|---|---|---|
| EP2946414B1 (en) | 2013-01-18 | 2024-10-30 | Yale University | Methods for making a superconducting device with at least one enclosure |
| EP3111379B1 (en) | 2014-02-28 | 2020-06-24 | Rigetti & Co., Inc. | Housing qubit devices in an electromagnetic waveguide system |
| EP3262573B1 (en) | 2015-02-27 | 2024-04-03 | Yale University | Techniques for coupling planar qubits to non-planar resonators and related systems and methods |
| US9836699B1 (en) | 2015-04-27 | 2017-12-05 | Rigetti & Co. | Microwave integrated quantum circuits with interposer |
| US10068181B1 (en) | 2015-04-27 | 2018-09-04 | Rigetti & Co, Inc. | Microwave integrated quantum circuits with cap wafer and methods for making the same |
| CN109891591B (zh) | 2016-09-13 | 2024-01-09 | 谷歌有限责任公司 | 减少堆叠量子器件中的损耗 |
| CN109791924A (zh) * | 2016-09-29 | 2019-05-21 | 英特尔公司 | 量子计算组件 |
| US10176432B2 (en) * | 2017-03-07 | 2019-01-08 | International Business Machines Corporation | Weakly tunable qubit based on two coupled disparate transmons |
| EP3852021B1 (en) * | 2017-03-13 | 2024-07-31 | Google LLC | Integrating circuit elements in a stacked quantum computing device |
| US11276727B1 (en) | 2017-06-19 | 2022-03-15 | Rigetti & Co, Llc | Superconducting vias for routing electrical signals through substrates and their methods of manufacture |
| US11121301B1 (en) | 2017-06-19 | 2021-09-14 | Rigetti & Co, Inc. | Microwave integrated quantum circuits with cap wafers and their methods of manufacture |
| KR102782205B1 (ko) * | 2017-09-13 | 2025-03-17 | 구글 엘엘씨 | 초전도 양자 컴퓨팅을 위한 하이브리드 키네틱 인덕턴스 장치 |
| US10256206B2 (en) * | 2018-03-16 | 2019-04-09 | Intel Corporation | Qubit die attachment using preforms |
| US10243132B1 (en) | 2018-03-23 | 2019-03-26 | International Business Machines Corporation | Vertical josephson junction superconducting device |
| US10672971B2 (en) | 2018-03-23 | 2020-06-02 | International Business Machines Corporation | Vertical transmon qubit device with microstrip waveguides |
| US10256392B1 (en) | 2018-03-23 | 2019-04-09 | International Business Machines Corporation | Vertical transmon qubit device |
| US10505096B1 (en) * | 2018-05-25 | 2019-12-10 | International Business Machines Corporation | Three-dimensional integration for qubits on multiple height crystalline dielectric |
| US10497746B1 (en) * | 2018-05-25 | 2019-12-03 | International Business Machines Corporation | Three-dimensional integration for qubits on crystalline dielectric |
| US11121302B2 (en) | 2018-10-11 | 2021-09-14 | SeeQC, Inc. | System and method for superconducting multi-chip module |
| TWI809224B (zh) * | 2018-11-22 | 2023-07-21 | 國立研究開發法人科學技術振興機構 | 非線性微波濾波器 |
| US11223355B2 (en) | 2018-12-12 | 2022-01-11 | Yale University | Inductively-shunted transmon qubit for superconducting circuits |
| JP6986788B2 (ja) * | 2019-10-02 | 2021-12-22 | 大輔 才田 | 量子回路システム |
| KR102681247B1 (ko) * | 2019-11-12 | 2024-07-04 | 인터내셔널 비지네스 머신즈 코포레이션 | 초전도 디바이스의 캡슐화를 강화하기 위한 접착층 |
| EP4070392A4 (en) | 2019-12-05 | 2024-01-03 | D-Wave Systems Inc. | Systems and methods for fabricating superconducting integrated circuits |
| KR102869874B1 (ko) * | 2020-01-14 | 2025-10-10 | 삼성전자주식회사 | 3차원 트랜스몬 큐빗 장치 |
| WO2021146028A1 (en) * | 2020-01-17 | 2021-07-22 | D-Wave Systems Inc. | Systems and methods for fabricating superconducting integrated circuits |
| DE102020201688B3 (de) | 2020-02-11 | 2021-07-29 | Forschungszentrum Jülich GmbH | Schaltkreis mit gekoppelten Qubits mit unterschiedlich anharmonischem Energiespektrum |
| US11600761B2 (en) * | 2020-02-21 | 2023-03-07 | Applied Materials, Inc. | High critical temperature metal nitride layer with oxide or oxynitride seed layer |
| WO2021168010A1 (en) | 2020-02-21 | 2021-08-26 | Applied Materials, Inc. | Method of making high critical temperature metal nitride layer |
| US12376501B2 (en) | 2020-05-11 | 2025-07-29 | 1372934 B.C. Ltd. | Kinetic inductance devices, methods for fabricating kinetic inductance devices, and articles employing the same |
| FR3114444B1 (fr) * | 2020-09-21 | 2022-09-30 | Commissariat Energie Atomique | Puce à routage bifonctionnel et procédé de fabrication associé |
| WO2022113889A1 (ja) * | 2020-11-30 | 2022-06-02 | 株式会社村田製作所 | 伝送線路及び電子機器 |
| US12033981B2 (en) | 2020-12-16 | 2024-07-09 | International Business Machines Corporation | Create a protected layer for interconnects and devices in a packaged quantum structure |
| JP7632071B2 (ja) * | 2021-05-21 | 2025-02-19 | 日本電気株式会社 | サンプルホルダ、および超伝導量子計算機 |
| JP7676942B2 (ja) * | 2021-05-21 | 2025-05-15 | 日本電気株式会社 | サンプルホルダ、および超伝導量子計算機 |
| US12087503B2 (en) | 2021-06-11 | 2024-09-10 | SeeQC, Inc. | System and method of flux bias for superconducting quantum circuits |
| US11664801B1 (en) | 2021-12-08 | 2023-05-30 | International Business Machines Corporation | Multi-qubit architectures with mode-selective charge coupling between novel fluxonium-molecule qubits |
| US20230196163A1 (en) * | 2021-12-17 | 2023-06-22 | International Business Machines Corporation | Shielded superconducting qubit with improved coherence |
| EP4362651A1 (en) * | 2022-10-26 | 2024-05-01 | Infineon Technologies Austria AG | Electronic device including a superconducting electronic circuit |
| US12439834B2 (en) | 2022-12-21 | 2025-10-07 | International Business Machines Corporation | Solder-shielded chip bonding |
| CN115697029B (zh) * | 2022-12-30 | 2023-06-20 | 量子科技长三角产业创新中心 | 一种超导量子芯片及其制备方法 |
| CN115915907B (zh) * | 2023-01-05 | 2023-09-12 | 量子科技长三角产业创新中心 | 一种超导量子芯片制备方法及超导量子芯片 |
| FI131716B1 (en) * | 2023-05-24 | 2025-10-13 | Teknologian Tutkimuskeskus Vtt Oy | Superconducting device |
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- 2014-01-17 EP EP14778477.1A patent/EP2946413B1/en active Active
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- 2014-01-17 JP JP2015553853A patent/JP6461009B2/ja active Active
- 2014-01-17 WO PCT/US2014/012073 patent/WO2014163728A2/en not_active Ceased
- 2014-01-17 CA CA2898598A patent/CA2898598C/en active Active
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2018
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| Publication number | Publication date |
|---|---|
| WO2014163728A2 (en) | 2014-10-09 |
| US20150357550A1 (en) | 2015-12-10 |
| JP2019050399A (ja) | 2019-03-28 |
| EP2946413A4 (en) | 2016-09-14 |
| EP2946413A2 (en) | 2015-11-25 |
| KR20150127045A (ko) | 2015-11-16 |
| SG11201505616YA (en) | 2015-09-29 |
| CA2898598A1 (en) | 2014-10-09 |
| EP2946413B1 (en) | 2022-01-05 |
| US10424711B2 (en) | 2019-09-24 |
| JP2016509800A (ja) | 2016-03-31 |
| KR102178986B1 (ko) | 2020-11-18 |
| JP6461009B2 (ja) | 2019-01-30 |
| WO2014163728A3 (en) | 2014-12-31 |
| HK1218022A1 (zh) | 2017-01-27 |
| JP6744379B2 (ja) | 2020-08-19 |
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