CA2786489A1 - Procede de nanostructuration et appareil - Google Patents

Procede de nanostructuration et appareil Download PDF

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Publication number
CA2786489A1
CA2786489A1 CA2786489A CA2786489A CA2786489A1 CA 2786489 A1 CA2786489 A1 CA 2786489A1 CA 2786489 A CA2786489 A CA 2786489A CA 2786489 A CA2786489 A CA 2786489A CA 2786489 A1 CA2786489 A1 CA 2786489A1
Authority
CA
Canada
Prior art keywords
accordance
film
substrate
nanostructured
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA2786489A
Other languages
English (en)
Inventor
Boris Kobrin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rolith Inc
Original Assignee
Rolith Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rolith Inc filed Critical Rolith Inc
Publication of CA2786489A1 publication Critical patent/CA2786489A1/fr
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2035—Exposure; Apparatus therefor simultaneous coating and exposure; using a belt mask, e.g. endless
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
CA2786489A 2010-01-12 2011-01-07 Procede de nanostructuration et appareil Abandoned CA2786489A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US33587710P 2010-01-12 2010-01-12
US61/335,877 2010-01-12
PCT/US2011/000029 WO2011087896A2 (fr) 2010-01-12 2011-01-07 Procédé de nanostructuration et appareil

Publications (1)

Publication Number Publication Date
CA2786489A1 true CA2786489A1 (fr) 2011-07-21

Family

ID=44304914

Family Applications (1)

Application Number Title Priority Date Filing Date
CA2786489A Abandoned CA2786489A1 (fr) 2010-01-12 2011-01-07 Procede de nanostructuration et appareil

Country Status (9)

Country Link
EP (1) EP2524266A2 (fr)
JP (1) JP2013517625A (fr)
KR (1) KR101430849B1 (fr)
CN (1) CN102859441A (fr)
AU (1) AU2011205582A1 (fr)
CA (1) CA2786489A1 (fr)
MX (1) MX2012008072A (fr)
RU (1) RU2012134344A (fr)
WO (1) WO2011087896A2 (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9465296B2 (en) 2010-01-12 2016-10-11 Rolith, Inc. Nanopatterning method and apparatus
RU2544280C2 (ru) 2010-08-23 2015-03-20 Ролит, Инк. Маска для ближнепольной литографии и ее изготовление
WO2013158543A1 (fr) * 2012-04-17 2013-10-24 The Regents Of The University Of Michigan Procédés de fabrication de grilles conductrices à micro-échelle et à nano-échelle d'électrodes transparentes et de polariseurs par photolithographie rouleau à rouleau
TWI494537B (zh) * 2013-01-23 2015-08-01 Hitachi High Tech Corp A pattern measuring method, a device condition setting method of a charged particle beam device, and a charged particle beam device
CN103199268B (zh) * 2013-03-11 2016-02-03 中国科学院上海高等研究院 基于纳米压印技术的有序纳米结构膜、有序纳米结构膜电极的制备及应用
CN103268056A (zh) * 2013-05-10 2013-08-28 西安建筑科技大学 柔性掩膜板及其制备方法
CN103576447A (zh) * 2013-11-05 2014-02-12 无锡英普林纳米科技有限公司 一种含氟聚合物紫外纳米压印模板及其制备方法
KR101566263B1 (ko) * 2014-02-28 2015-11-05 연세대학교 산학협력단 초해상막 및 이를 이용한 리소그래피 방법
US9244356B1 (en) 2014-04-03 2016-01-26 Rolith, Inc. Transparent metal mesh and method of manufacture
WO2015183243A1 (fr) 2014-05-27 2015-12-03 Rolith, Inc. Éléments anti-contrefaçon et procédés de fabrication et de détection
CN104698745B (zh) * 2015-02-11 2019-04-12 广州中国科学院先进技术研究所 一种尺寸可控制的纳米块制作方法
RU2725707C2 (ru) * 2015-11-03 2020-07-03 Материон Корпорейшн Фильтрующая решетка с уменьшенным рассеянием сфокусированного света
AU2018262130B2 (en) * 2017-05-03 2021-11-11 Nanotech Security Corp. Methods for micro and nano fabrication by selective template removal
TW202241687A (zh) 2017-05-25 2022-11-01 美商麥吉克利普公司 雙面壓印方法
US10890769B2 (en) 2017-10-26 2021-01-12 Magic Leap, Inc. Augmented reality display having liquid crystal variable focus element and roll-to-roll method and apparatus for forming the same
CN109901362B (zh) 2017-12-11 2022-04-19 中国科学院光电技术研究所 二次成像光学光刻方法和设备

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0467654U (fr) * 1990-10-24 1992-06-16
US6518189B1 (en) * 1995-11-15 2003-02-11 Regents Of The University Of Minnesota Method and apparatus for high density nanostructures
US6236033B1 (en) * 1998-12-09 2001-05-22 Nec Research Institute, Inc. Enhanced optical transmission apparatus utilizing metal films having apertures and periodic surface topography
JP2000241648A (ja) * 1999-02-17 2000-09-08 Sony Corp 光学部品の製造装置およびその製造方法ならびに光学部品
JP2005025860A (ja) * 2003-07-02 2005-01-27 Ricoh Co Ltd 光プローブ及び光ピックアップ装置
JP2006133550A (ja) * 2004-11-08 2006-05-25 Toshiba Corp 画像消去装置及び画像消去方法
JP4789039B2 (ja) * 2005-06-10 2011-10-05 独立行政法人産業技術総合研究所 ナノインプリント装置
JP2008116514A (ja) * 2006-10-31 2008-05-22 Mitsubishi Paper Mills Ltd 連続露光装置
JP4406452B2 (ja) * 2007-09-27 2010-01-27 株式会社日立製作所 ベルト状金型およびそれを用いたナノインプリント装置
CN105171985A (zh) * 2008-01-22 2015-12-23 罗利诗公司 大面积纳米图案化方法和设备
US8192920B2 (en) * 2008-04-26 2012-06-05 Rolith Inc. Lithography method
JP2009290504A (ja) * 2008-05-29 2009-12-10 Kyocera Corp 携帯電子機器

Also Published As

Publication number Publication date
EP2524266A2 (fr) 2012-11-21
CN102859441A (zh) 2013-01-02
KR101430849B1 (ko) 2014-09-22
AU2011205582A1 (en) 2012-08-30
KR20120123413A (ko) 2012-11-08
RU2012134344A (ru) 2014-02-20
WO2011087896A2 (fr) 2011-07-21
JP2013517625A (ja) 2013-05-16
MX2012008072A (es) 2013-01-29
WO2011087896A3 (fr) 2012-01-12

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Legal Events

Date Code Title Description
EEER Examination request
FZDE Discontinued

Effective date: 20150107