CA2786489A1 - Nanopatterning method and apparatus - Google Patents
Nanopatterning method and apparatus Download PDFInfo
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- CA2786489A1 CA2786489A1 CA2786489A CA2786489A CA2786489A1 CA 2786489 A1 CA2786489 A1 CA 2786489A1 CA 2786489 A CA2786489 A CA 2786489A CA 2786489 A CA2786489 A CA 2786489A CA 2786489 A1 CA2786489 A1 CA 2786489A1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2035—Exposure; Apparatus therefor simultaneous coating and exposure; using a belt mask, e.g. endless
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
Abstract
Embodiments of the invention relate to methods and apparatus useful in the nanopatterning of large area substrates, where a movable nanostructured film is used to image a radiation-sensitive material. The nanopatterning technique makes use of Near- Field photolithography, where the nanostructured film used to modulate light intensity reaching radiation-sensitive layer. The Near-Field photolithography may make use of an elastomeric phase-shifting mask, or may employ surface plasmon technology, where a movable film comprises metal nano holes or nanoparticles.
Description
[0001] NANOPATTERNING METHOD AND APPARATUS
[0002] Field Embodiments of the invention relate to nanopatterning methods which can be used to pattern large substrates or substrates such as films which may be sold as rolled goods.
Other embodiments of the invention pertain to apparatus which may be used to pattern substrates, and which may be used to carry out method embodiments, including the kind described.
Other embodiments of the invention pertain to apparatus which may be used to pattern substrates, and which may be used to carry out method embodiments, including the kind described.
[0003] Background [0004] This section describes background subject matter related to the disclosed embodiments of the present invention. There is no intention, either express or implied, that the background art discussed in this section legally constitutes prior art.
[0005] Nanostructuring is necessary for many present applications and industries and for new technologies which are under development. Improvements in efficiency can be achieved for current applications in areas such as solar cells and LEDs, and in next generation data storage devices, for example and not by way of limitation.
[0006] Nanostructured substrates may be fabricated using techniques such as e-beam direct writing, Deep UV lithography, nanosphere lithography, nanoimprint lithography, near-filed phase shift lithography, and plasmonic lithography, for example.
[0007] Nanolmprint Lithography (NIL) creates patterns by mechanical deformation of an imprint resist, followed by subsequent processing. The imprint resist is typically a monomeric or polymeric formulation that is cured by heat or by UV light during the imprinting. There are a number of variations of NIL. However, two of the processes appear to be the most important. These are Thermoplastic NanoImprint Lithography (TNIL) and Step and Flash Nanolmprint Lithography (SFIL).
[0008] TNIL is the earliest and most mature nanoimprint lithography. In a standard TNIL process, a thin layer of imprint resist (a thermoplastic polymer) is spin coated onto a sample substrate. Then a mold, which has predefined topological patterns, is brought into contact with the sample, and pressed against the sample under a given pressure.
When heated above the glass transition temperature of the thermoplastic polymer, the pattern on the mold is pressed into a thermoplastic polymer film melt. After the sample, with impressed mold is cooled down, the mold is separated from the sample and the imprint resist is left on the sample substrate surface. The pattern does not pass through the imprint resist; there is a residual thickness of unchanged thermoplastic polymer film remaining on the sample substrate surface. A pattern transfer process, such as reactive ion etching, can be used to transfer the pattern in the resist to the underlying substrate.
The variation in the residual thickness of unaltered thermoplastic polymer film presents a problem with respect to uniformity and optimization of the etch process used to transfer the pattern to the substrate.
100091 Tapio Makela et al. of VTT, a technical research center in Finland, have published information about a custom built laboratory scale roll-to-roll imprinting tool dedicated to manufacturing of submicron structures with high throughput.
Hitachi and others have developed a sheet or roll-to-roll prototype NIL machine, and have demonstrated capability to process 15 meter long sheets. The goal has been to create a continuous imprint process using belt molding (nickel plated molds) to imprint polystyrene sheets for large geometry applications such as membranes for fuel cells, batteries and possibly displays.
[00101 Hua Tan et al of Princeton University have published 2 implementations of roller Nanoimprint lithography: rolling cylinder mold on flat, solid substrate, and putting a flat mold directly on a substrate and rolling a smooth roller on top of the mold.
Both methods are based on TNIL approach, where roller temperature is set above the glass transition temperature, Tg, of the resist (PMMA), while the platform is set to temperature below Tg. Currently the prototype tools do not offer a desirable throughput.
In addition, there is a need to improve reliability and repeatability with respect to the imprinted surface.
[00111 In the SFIL process, a UV curable liquid resist is applied to the sample substrate and the mold is made of a transparent substrate, such as fused silica. After the mold and the sample substrate are pressed together, the resist is cured using UV light, and becomes solid. After separation of the mold from the cured resist material, a similar pattern to that used in TNIL may be used to transfer the pattern to the underlying sample substrate. Dae-Geun Choi from Korea Institute of Machinery suggested using fluorinated organic-inorganic hybrid mold as a stamp for Nanoimprint lithography, which does not require anti-stiction layer for demolding it from the substrate materials.
[0012] Since Nanoimprint lithography is based on mechanical deformation of resist, there are a number of challenges with both the SFIL and TNIL
processes, in static, step-and-repeat, or roll-to-roll implementations,. Those challenges include template lifetime, throughput rate, imprint layer tolerances, and critical dimension control during transfer of the pattern to the underlying substrate. The residual, non-imprinted layer which remains after the imprinting process requires an additional etch step prior to the main pattern transfer etch. Defects can be produced by incomplete filling of negative patterns and the shrinkage phenomenon which often occurs with respect to polymeric materials. Difference in thermal expansion coefficients between the mold and the substrate cause lateral strain, and the strain is concentrated at the corner of the pattern.
The strain induces defects and causes fracture defects at the base part of the pattern mold releasing step.
[0013] Soft lithography is an alternative to Nanoimprint lithography method of micro and nano fabrication. This technology relates to replica molding of self assembling monolayers. In soft lithography, an elastomeric stamp with patterned relief structures on its surface is used to generate patterns and structures with feature sizes ranging from 30 nm to 100 nm. The most promising soft lithography technique is microcontact printing ( CP) with self-assembled monolayers (SAMS). The basic process of CP
includes: 1.
A polydimethylsiloxane (PDMS) mold is dipped into a solution of a specific material, where the specific material is capable of forming a self-assembled monolayer (SAM).
Such specific materials may be referred to as an ink. The specific material sticks to a protruding pattern on the PDMS master surface. 2. The PDMS mold, with the material-coated surface facing downward, is contacted with a surface of a metal-coated substrate such as gold or silver, so that only the pattern on the PDMS mold surface contacts the metal-coated substrate. 3. The specific material forms a chemical bond with the metal, so that only the specific material which is on the protruding pattern surface sill remain on the metal-coated surface after removal of the PDMS mold. The specific material forms a SAM on the metal-coated substrate which extends above the metal-coated surface approximately one to two nanometers (just like ink on a piece of paper). 4.
The PDMS
mold is removed from the metal-coated surface of the substrate, leaving the patterned SAM on the metal-coated surface.
[00141 Optical Lithography does not use mechanical deformation or phase change of resist materials, like Nanoimprint lithography, and does not have materials management problems like Soft Lithography, thus providing better feature replication accuracy and more Manufacturable processing. Though regular optical lithography is limited in resolution by diffraction effects some new optical lithography techniques based on near field evanescent effects have already demonstrated advantages in printing sub-100 nm structures, though on small areas only. Near-field phase shift lithography NFPSL
involves exposure of a photoresist layer to ultraviolet (UV) light that passes through an elastomeric phase mask while the mask is in conformal contact with a photoresist.
Bringing an elastomeric phase mask into contact with a thin layer of photoresist causes the photoresist to "wet" the surface of the contact surface of the mask.
Passing UV light through the mask while it is in contact with the photoresist exposes the photoresist to the distribution of light intensity that develops at the surface of the mask. In the case of a mask with a depth of relief that is designed to modulate the phase of the transmitted light by ir, a local null in the intensity appears at the step edge of relief. When a positive photoresist is used, exposure through such a mask, followed by development, yields a line of photoresist with a width equal to the characteristic width of the null in intensity.
For 365 nm (Near UV) light in combination with a conventional photoresist, the width o the null in intensity is approximately 100 nm. A PDMS mask can be used to form a conformal, atomic scale contact with a flat, solid layer of photoresist. This contact is established spontaneously upon contact, without applied pressure. Generalized adhesion forces guide this process and provide a simple and convenient method of aligning the mask in angle and position in the direction normal to the photoresist surface, to establish perfect contact. There is no physical gap with respect to the photoresist.
PDMS is transparent to UV light with wavelengths greater than 300 nm. Passing light from a mercury lamp (where the main spectral lines are at 355 - 365 nm) through the PDMS
while it is in conformal contact with a layer of photoresist exposes the photoresist to the intensity distribution that forms at the mask.
[00151 Yasuhisa Inao, in a presentation entitled "Near-Field Lithography as a prototype nano-fabrication tool", at the 32nd International Conference on Micro and Nano Engineering in 2006, described a step-and-repeat near-field nanolithography developed by Canon, Inc. Near-field lithography (NFL) is used, where the distance between a mask and the photoresist to which a pattern is to be transferred are as close as possible. The initial distance between the mask and a wafer substrate was set at about 50 m. The patterning technique was described as a "tri-layer resist process", using a very thin photoresist. A pattern transfer mask was attached to the bottom of a pressure vessel and pressurized to accomplish a "perfect physical contact" between the mask and a wafer surface. The mask was "deformed to fit to the wafer". The initial 50 m distance between the mask and the wafer is said to allows movement of the mask to another position for exposure and patterning of areas more than 5 mm x 5mm. The patterning system made use of i-line (365 nm) radiation from a mercury lamp as a light source. A
successful patterning of a 4 inch silicon wafer with structures smaller than 50 nm was accomplished by such a step-and-repeat method.
[00161 In an article entitled "Large-area patterning of 50 nm structures on flexible substrates using near-field 193 nm radiation", JVST B 21 (2002), at pages 78 -81, Kunz et al. applied near-field phase shift mask lithography to the nanopatterning of flexible sheets (Polyimide films) using rigid fused silica masks and deep UV wavelength exposure. In a subsequent article entitled "Experimental and computational studies of phase shift lithography with binary elastomeric masks", JVST B 24(2) (2006) at pages 828 - 835, Maria et al. present experimental and computational studies of a phase shifting photolithographic technique that uses binary elastomeric phase masks in conformal contact with layers of photoresist. The work incorporates optimized masks formed by casting and curing prepolymers to the elastomer poly(dimethylsiloxane) against anisotropically etched structures of single crystal silicon on Si02/Si. The authors report on the capability of using the PDMS phase mask to form resist features in the overall geometry of the relief on the mask.
[00171 U.S. Patent No. 6,753,131 to Rogers et al, issued June 22, 2004, titled "Transparent Elastomeric, Contact-Mode Photolithography Mask, Sensor, and Wavefront Engineering Element", describes a contact-mode photolithography phase mask which includes a diffracting surface having a plurality of indentations and protrusions. The protrusions are brought into contact with a surface of a positive photoresist, and the surface is exposed o electromagnetic radiation through the phase mask. The phase shift due to radiation passing through indentations as opposed to the protrusions is essentially complete. Minima in intensity of electromagnetic radiation are thereby produced at boundaries between the indentations and protrusions. The elastomeric mask conforms well to the surface of the photoresist, and following development of the photoresist, features smaller than 100 nm can be obtained.(Abstract) In one embodiment, reflective plates are used exterior to the substrate and the contact mask, so radiation will be bounced to a desired location at a shifted phase. In another embodiment, the substrate may be shaped in a manner which causes a deformation of the phase shifting mask, affecting the behavior of the phase shifting mask during exposure.
[0018] Near Field Surface Plasmon Lithography (NFSPL) makes use of near-field excitation to induce photochemical or photophysical changes to produce nanostructures.
The main near-field technique is based on the local field enhancement around metal nanostructures when illuminated at the surface plasmon resonance frequency.
Plasmon printing consists of the use of plasmon guided evanescent waves through metallic nanostructures to produce photochemical and photophysical changes in a layer below the metallic structure. In particular, visible exposure (?, = 410 nm) of silver nanoparticles in close proximity to a thin film of a g-line photoresist (AZ- 1813 available from AZ-Electronic Materials, MicroChemicals GmbH, Ulm, Germany) can produce selectively exposed areas with a diameter smaller than x./20. W. Srituravanich et al. in an article entitled "Plasmonic Nanolithography", Nanoletters V4, N6 (2004), pp. 1085 -1088, describes the use of near UV light ( X = 230 nm - 350 nm) to excite SPs on a metal substrate, to enhance the transmission through subwavelength periodic apertures with effectively shorter wavelengths compared to the excitation light wavelength. A
plasmonic mask designed for lithography in the UV range is composed of an aluminum layer perforated with 2 dimensional periodic hole arrays and two surrounding dielectric layers, one on each side. Aluminum is chosen since it can excite the SPs in the UV
range. Quartz is employed as the mask support substrate, with a poly(methyl methacrylate) spacer layer which acts as adhesive for the aluminum foil and as a dielectric between the aluminum and the quartz. Poly(methyl methacrylate is used in combination with quartz, because their transparency to UV light at the exposure wavelength (i-line at 365 nm) and comparable dielectric constants (2.18 and 2.30, quartz and PMMA, respectively). A sub-100 nm dot array pattern on a 170 nm period has been successfully generated using an exposure radiation of 365 nm wavelength.
Apparently the total area of patterning was about 5 pm x 5 m, with no scalability issues discussed in the paper.
[0019] Joseph Martin has suggested a proximity masking device for Near-filed lithography in US 5,928,815, where cylindrical block covered with metal film for light internal reflection is used for directing light to the one end of the cylinder (base of the cylinder), which contains a surface relief pattern used for Near-field exposure. This block is kept in some proximity distance ("very small, but not zero") from the photoresist on the sample. Cylinder is translated in horizontal direction using some precise mechanism, which is used to pattern photoresist area.
100201 The only published idea about using rollers for optical lithography can be found in the Japanese Unexamined Patent Publication, No. 59200419A, published November 13, 1984, titled "Large Area Exposure Apparatus". Toshio Aoki et al.
described the use of a transparent cylindrical drum which can rotate and translate with an internal light source and a film of patterned photomask material attached on the outside of the cylindrical drum. A film of a transparent heat reflective material is present on the inside of the drum. A substrate with an aluminum film on its surface and a photoresist overlying the aluminum film is contacted with the patterned photomask on the drum surface and imaging light is passed through the photomask to image the photoresist on the surface of the aluminum film. The photoresist is subsequently developed, to provide a patterned photoresist. The patterned photoresist is then used as an etch mask for an aluminum film present on the substrate.
[00211 There is no description regarding the kinds of materials which were used as a photomask film or as a photoresist on the surface of the aluminum film. A
high pressure mercury lamp light source (500 W) was used to image the photoresist overlying the aluminum film. Glass substrates about 210 mm (8.3 in.) x 150 mm (5.9 in.) and about 0.2 mm (0.008.in.) thick were produced using the cylindrical drum pattern transfer apparatus. The feature size of the pattern transferred using the technique was about 500 m2, which was apparently a square having a dimension of about 22.2 m x 22.2 gm.
This feature size was based on the approximate pixel size of an LCD display at the time the patent application was filed in 1984. The photomask film on the outside of the cylindrical drum was said to last for approximately 140,000 pattern transfers.
The contact lithography scheme used by Toshio Aoki et al. is not capable of producing sub-micron features.
[0022] It does not appear that an nanoimprinting methods (thermal or UV-cured) or soft lithography using printing with SAM materials are highly manufacturable processes.
In general, the imprinting method creates deformation of the substrate material due to the thermal treatment (thermal NIL, for example) or shrinkage of pattern features upon polymer curing (UV-cured polymeric features). Moreover, due to the application of pressure (hard contact) between a stamp and a substrate, defects are essentially unavoidable, and a stamp has a very limited lifetime. Soft lithography does have an advantage in that it is thermal and stress-free printing technology. However, the use of a SAM as an "ink" for a sub-100 nm pattern is very problematic due to the drifting of molecules over the surface, and application over large areas has not been proved experimentally.
[0023] Earlier authors have suggested a method of nanopatterning large areas of rigid and flexible substrate materials based on near-field optical lithography described in Patent applications W02009094009 and US20090297989, where a rotatable cylindrical or cone-shaped mask is used to image a radiation-sensitive material. The nanopatterning technique makes use of Near-Field photolithography, where the mask used to pattern the substrate is in contact with the substrate. The Near-Field photolithography may make use of an elastomeric phase-shifting mask, or may employ surface plasmon technology, where a rotating cylinder surface comprises metal nano holes or nanoparticles.
[0024] SUMMARY
[0025] Embodiments of the invention pertain to methods and apparatus useful in the nanopatterning of large area substrates, rigid flat or curved objects or flexible films. The nanopatterning technique makes use of Near-Field UV photolithography, where the mask used to pattern the substrate is in contact with the substrate. The Near-Field photolithography may include a phase-shifting mask or surface plasmon technology.
The Near-field mask is fabricated from a flexible film, which is nanostructured in accordance with the desired pattern. In phase-shift method, one can use nanostructuctured elastomeric film, for example, Polydimethylsiloxane (PDMS) film.
Nanostructuring can be done using laser treatment, selective etching or other available techniques, or it can be done by replication (molding, casting) from the nanostructured "masters", which are fabricated using known nanofabrication methods (like, e-beam writing, holographic lithography, direct laser writing or Nanoimprint step-and-repeat or roll-to-roll lithography). This film can be supported by another transparent flexible film (carrier). In plasmonic method one can use a film with metal layer having nanohole structure, created using one of the abovementioned methods or by depositing metal nanoparticles, for example, deposited from a colloid solution. In order to provide uniform contact area for near-field lithography we rely on Van-der-Vaals forces of stiction between elastomeric film and photoresist layer on the substrate. Alternatively, a transparent cylinder is used to provide controllable contact between nanostructured film and a substrate. Such cylinder may have flexible walls and can be pressurized by a gas to provide controllable pressure between a nanostructured film and a substrate.
[0026] BRIEF DESCRIPTION OF THE DRAWINGS
[0027] So that the manner in which the exemplary embodiments of the present invention are attained is clear and can be understood in detail, with reference to the particular description provided above, and with reference to the detailed description of exemplary embodiments, applicants have provided illustrating drawings. It is to be appreciated that drawings are provided only when necessary to understand exemplary embodiments of the invention and that certain well known processes and apparatus are not illustrated herein in order not to obscure the inventive nature of the subject matter of the disclosure.
[0028] Figure 1 A shows a cross-sectional view of an embodiment of a flexible nanostructured film 1, having a phase-shift mask properties. Surface relief nanostructure 3 is fabricated on one of the surfaces of the film 2.
[00291 Figure 1 B shows a cross-sectional view of an embodiment of a flexible nanostructured film 1, having a plasmonic mask properties. Array of nanoholes are created in the film or array of nanoparticles are deposited on it's surface.
[00301 Figure 2 shows a suggested nanopatterning system prior to starting the process. A nanostructured film 1 is wrapped around support drums 4 and 5.
Substrate 6 has a photoresist layer 7 deposited on it's surface.
[00311 Figure 3 shows another embodiment where nanostructured film 1 can be rolled from one roll 4 to another roll 5.
[00321 Figure 4 shows a starting point of the process, when a film 1 is brought to contact with a photoresist 7 using movable arm 8.
[00331 Figure 5 shows the patterning process, when the arm 8 is removed from the film-substrate contact, substrate 6 is translating in one direction, and UV light source 7 is illuminating the contact zone between a film and a substrate.
[00341 Figure 6 shows another embodiment, where nanopatterned film is in contact with the substrate in quite wide surface area.
[00351 Figure 7 shows the embodiment, where the transparent cylinder 11 is used to bring nanostructured film 1 in contact with photoresist 7 on the substrate 6.
[00361 Figure 8 shows the embodiment, where the substrate is a flexible film 12, which can be translated from one roll 14 to another 13.
[00371 Figure 9 shows the embodiment, where the substrate is nanopatterned from the both sides [00381 DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS
[00391 As a preface to the detailed description, it should be noted that, as used in this specification and the appended claims, the singular forms "a", "an", and "the"
include plural referents, unless the context clearly dictates otherwise.
100401 When the word "about" is used herein, this is intended to mean that the nominal value presented is precise within 10 %.
[00411 Embodiments of the invention relate to methods and apparatus useful in the nanopatterning of large area substrates, where a flexible nanostructured film is used to image a radiation-sensitive material. The nanopatterning technique makes use of near-field photolithography, where the wavelength of radiation used to image a radiation-sensitive layer on a substrate is 650 nm or less, and where the mask used to pattern the substrate is in contact with the substrate. The near-field photolithography may make use of a phase-shifting mask, or may employ surface plasmon technology, where a metal layer on movable flexible film's surface comprises nano holes, or metal nanoparticles are dispersed on the surface of such flexible film. The detailed description provided below is just a sampling of the possibilities which will be recognized by one skilled in the art upon reading the disclosure herein.
[00421 One of the embodiments suggests a phase-shift mask approach and is implemented by flexible nanostructured film. The problem of providing a uniform and permanent contact between such flexible nanostructured film and a substrate is solved by manufacturing this film from a material capable of creating strong but temporary bond to photoresist layer. One example of such material is an elastomer, for example Polydimethylsiloxane (PDMS). A PDMS film can be used to form a conformal, atomic scale contact with a flat, solid layer of photoresist. This contact is established spontaneously upon contact, without applied pressure. Schematic of such film is shown on Fig. 1 A, where film 2 has a nanostructure 3 in the form of transparent surface relief.
[00431 Film 2 can be made from one material (for example, PDMS) or be a composite or multi-layer comprised of more than one material, for example, nanostructured PDMS can be laminated or deposited on a transparent and flexible support film. Such support film can be made of polycarbonate (PC), polymethylmethacrylate (PMMA), Polyethylene terephthalate (PET), amorphous fluoric-polymer, for example CYTOP, and other materials. Deposition of PDMS on transparent flexible support film can be done using one of available techniques, for example, dipping, spraying or casting.
Support film can be treated using oxygen plasma, UV ozone, corona discharge or adhesion promoters, like silanes to promote better adhesion between elastomeric film and a polymer film support.
[00441 Another embodiment of "sticky" material, which can be used instead of elastomer, to create a dynamic contact with photoresist is cross-linked silane material.
Such material can be deposited from a silane precursor (usually used to deposit self-assembled monolayers, SAMs) with abundance of water/moisture. For example, DDMS
(dichlorodimethylsilane) creates very sticky surface if deposited with abundance of moisture. In this embodiment, the carrier layer is nanostructured using one of known nanostructuring techniques (preferably, Roll-to-Roll Nanoimprint lithography) and then coated with silane material to provide "stickyness".
[00451 A surface relief for phase-shift lithography can be created in the elastomeric or silane film using any of the following methods: First, nanostructured "master" can be obtained using one of the available nanofabrication techniques (deep-UV
stepper, e-beam, ion-beam, holography, laser treatment, embossing, Nanoimprint, and others). Second, a replica of desired nanostructure can be obtained from such master on the surface of elastomeric film using, for example, casting or molding, in roll-to-roll or step-and-repeat mode.
[00461 Another embodiment suggests that the carrier layer is nanostructured using one of known nanostructuring techniques (preferably, Roll-to-Roll Nanoimprint lithography) and then coated with elastomer material (like PDMS) or silane material (like DDMS) to provide "stickyness".
[00471 Nanostructure of such mask can be designed to act as phase shifter, and in this case the height of the features should be proportional ton. For example, PDMS
material having refractive index 1.43 for wavelength of exposure 365 rim should have a features with depth about 400 nm to cause a phase shift effect. In this case a local minima of light intensity will happen at the step edges of the mask. For example, lines from 20 nm to 150 nm can be obtained in photoresist corresponding to the positions of surface relief edges in the phase-shift mask. Thus this lithography has image reduction properties, and nanostructures can be achieved using much larger features on the mask.
[0048] Another embodiment is using nanostructure on flexible mask to act as 1:1 replication mask. As it was demonstrated in previous publications, for example, Tae-Woo Lee, at al in Advanced Functional Materials, 2005, 15,1435., depending on specific parameters of photoresist exposure and development, one can achieve 1:1 replication of the features from mask to photoresist or feature size reduction using phase-shift on the surface relief edges on the same elastomeric mask. Specifically, underexposure or underdevelopment against the normal exposure doze and development time, would cause a significant differential between an effective exposure doze in non-contact and contact regions of the mask. This can be used to create al :1 replication from mask to photoresist in positive or negative tone (depending on photoresist type).
[0049] Another embodiment suggests a plasmonic mask approach. Such plasmonic film could be a flexible metal film, shown on Fig 1B, which has arrays of nanoholes according to the desired pattern. Alternatively, metal layer is deposited on flexible transparent film. Metal layer patterning can be done using one of available nanopatterning techniques (deep-UV stepper, e-beam, ion-beam, holography, laser treatment, embossing, Nanoimprint, and others), followed by metal layer etching.
[0050] Alternatively, nanopattern can be fabricated using abovementioned methods on a transparent film, and then metal material can be deposited over nanopatterned resist, followed by metal layer lift-off.
[0051] And yet another embodiment uses metal nanoparticles dispensed in controllable way over the surface of the flexible transparent film to create a plasmonic mask. For example, metal nanoparticles can be mixed with PDMS material in a liquid phase prior to depositing it onto the flexible transparent support film.
Alternatively, metal nanoparticles can be deposited onto nanotemplate fabricated in elastomeric layer.
100521 Nanostructured film can be wrapped around support drums 4 and 5, and kept at a controllable tension, as shown on Fig. 2 .
[00531 Alternatively, nanostructured films can be rolled from one roll 4 to another roll 5, as shown on Fig. 3.
[00541 The process starts by bringing a nanostructured film 1 in contact with the photoresist 7 deposited on the substrate 6, using a movable arm 8, as shown on Fig. 4.
Such contact will engage Van-der-Vaals forces and make film temporary stick to the photoresist. Then, as it is shown on Fig. 5, movable arm 8 is removed from the film-substrate contact, light source, which may include optical focusing, collimating or filtering system, 9 is turned on, providing exposure to the area of film-substrate contact, and substrate 6 is translated in one direction using constant or variable speed. Such translation will make film to move as well in the direction of the translation, exposing different parts of the substrate to the same or different pattern, depending on the nanostructure fabricated on the film.
[00551 Another embodiment, presented on Fig. 6 shows nanostructured film in contact with the photoresist across a wider area. This area of contact starts to move as soon as substrate begins translation in one direction. The width of contact area between a nanostructured film and a substrate can be changed by changing a relative position between the substrate 6 and drums 4 and 5, and also by changing tackiness of the nanostructured film material. This configuration also allows to increase area of nanostructured film exposure to light, which helps to improve a throughput of the method due to increase in dynamic exposure dosage.
[00561 When nanostructured film surface contact is not tacky enough (like, for example, in case of plasmonic mask approach) the movable arm is not retracted, keeping controllable and uniform pressure between the nanostructured film and a substrate. For example, the movable arm can be fabricated in the form of transparent cylinder 11, as shown on Fig. 7. This cylinder is actuated by the mechanical system providing controllable and uniform contact between nanostructured film and a substrate.
In that case, source of illumination 9 could be located inside such cylinder.
[00571 Such cylinder can be made from transparent flexible material and pressurized by a gas. In such case the area of contact and pressure between a mask and a substrate can be controlled by gas pressure.
[00591 The gas can be flown through flexible-wall cylinder constantly such as to create necessary controllable pressure and at the same time cool down the light source positioned inside this cylinder.
[00601 Disclosed nanopatterning methods can be used to pattern flexible films 12, as shown on Fig. 8, which can be translated from one roll 14 to another roll 13 during exposure.
[00611 Disclosed nanopatterning methods can be used to pattern rigid or flexible materials from the both sides, as shown on Fig. 9 100621 Disclosed nanopatterning methods can be used to pattern non-flat or curved substrates, as shown on Fig. 10. Fig. 10a shows how cylinder on a movable arm is following the curvature of the substrate, and Fig. 1 Ob shows how flexible-wall gas pressurized cylinder is following the curvature of the substrate. In latter case, instead of moving arm in vertical direction, one can adjust pressure inside cylinder to accommodate substrate height deviation caused by curvature.
When heated above the glass transition temperature of the thermoplastic polymer, the pattern on the mold is pressed into a thermoplastic polymer film melt. After the sample, with impressed mold is cooled down, the mold is separated from the sample and the imprint resist is left on the sample substrate surface. The pattern does not pass through the imprint resist; there is a residual thickness of unchanged thermoplastic polymer film remaining on the sample substrate surface. A pattern transfer process, such as reactive ion etching, can be used to transfer the pattern in the resist to the underlying substrate.
The variation in the residual thickness of unaltered thermoplastic polymer film presents a problem with respect to uniformity and optimization of the etch process used to transfer the pattern to the substrate.
100091 Tapio Makela et al. of VTT, a technical research center in Finland, have published information about a custom built laboratory scale roll-to-roll imprinting tool dedicated to manufacturing of submicron structures with high throughput.
Hitachi and others have developed a sheet or roll-to-roll prototype NIL machine, and have demonstrated capability to process 15 meter long sheets. The goal has been to create a continuous imprint process using belt molding (nickel plated molds) to imprint polystyrene sheets for large geometry applications such as membranes for fuel cells, batteries and possibly displays.
[00101 Hua Tan et al of Princeton University have published 2 implementations of roller Nanoimprint lithography: rolling cylinder mold on flat, solid substrate, and putting a flat mold directly on a substrate and rolling a smooth roller on top of the mold.
Both methods are based on TNIL approach, where roller temperature is set above the glass transition temperature, Tg, of the resist (PMMA), while the platform is set to temperature below Tg. Currently the prototype tools do not offer a desirable throughput.
In addition, there is a need to improve reliability and repeatability with respect to the imprinted surface.
[00111 In the SFIL process, a UV curable liquid resist is applied to the sample substrate and the mold is made of a transparent substrate, such as fused silica. After the mold and the sample substrate are pressed together, the resist is cured using UV light, and becomes solid. After separation of the mold from the cured resist material, a similar pattern to that used in TNIL may be used to transfer the pattern to the underlying sample substrate. Dae-Geun Choi from Korea Institute of Machinery suggested using fluorinated organic-inorganic hybrid mold as a stamp for Nanoimprint lithography, which does not require anti-stiction layer for demolding it from the substrate materials.
[0012] Since Nanoimprint lithography is based on mechanical deformation of resist, there are a number of challenges with both the SFIL and TNIL
processes, in static, step-and-repeat, or roll-to-roll implementations,. Those challenges include template lifetime, throughput rate, imprint layer tolerances, and critical dimension control during transfer of the pattern to the underlying substrate. The residual, non-imprinted layer which remains after the imprinting process requires an additional etch step prior to the main pattern transfer etch. Defects can be produced by incomplete filling of negative patterns and the shrinkage phenomenon which often occurs with respect to polymeric materials. Difference in thermal expansion coefficients between the mold and the substrate cause lateral strain, and the strain is concentrated at the corner of the pattern.
The strain induces defects and causes fracture defects at the base part of the pattern mold releasing step.
[0013] Soft lithography is an alternative to Nanoimprint lithography method of micro and nano fabrication. This technology relates to replica molding of self assembling monolayers. In soft lithography, an elastomeric stamp with patterned relief structures on its surface is used to generate patterns and structures with feature sizes ranging from 30 nm to 100 nm. The most promising soft lithography technique is microcontact printing ( CP) with self-assembled monolayers (SAMS). The basic process of CP
includes: 1.
A polydimethylsiloxane (PDMS) mold is dipped into a solution of a specific material, where the specific material is capable of forming a self-assembled monolayer (SAM).
Such specific materials may be referred to as an ink. The specific material sticks to a protruding pattern on the PDMS master surface. 2. The PDMS mold, with the material-coated surface facing downward, is contacted with a surface of a metal-coated substrate such as gold or silver, so that only the pattern on the PDMS mold surface contacts the metal-coated substrate. 3. The specific material forms a chemical bond with the metal, so that only the specific material which is on the protruding pattern surface sill remain on the metal-coated surface after removal of the PDMS mold. The specific material forms a SAM on the metal-coated substrate which extends above the metal-coated surface approximately one to two nanometers (just like ink on a piece of paper). 4.
The PDMS
mold is removed from the metal-coated surface of the substrate, leaving the patterned SAM on the metal-coated surface.
[00141 Optical Lithography does not use mechanical deformation or phase change of resist materials, like Nanoimprint lithography, and does not have materials management problems like Soft Lithography, thus providing better feature replication accuracy and more Manufacturable processing. Though regular optical lithography is limited in resolution by diffraction effects some new optical lithography techniques based on near field evanescent effects have already demonstrated advantages in printing sub-100 nm structures, though on small areas only. Near-field phase shift lithography NFPSL
involves exposure of a photoresist layer to ultraviolet (UV) light that passes through an elastomeric phase mask while the mask is in conformal contact with a photoresist.
Bringing an elastomeric phase mask into contact with a thin layer of photoresist causes the photoresist to "wet" the surface of the contact surface of the mask.
Passing UV light through the mask while it is in contact with the photoresist exposes the photoresist to the distribution of light intensity that develops at the surface of the mask. In the case of a mask with a depth of relief that is designed to modulate the phase of the transmitted light by ir, a local null in the intensity appears at the step edge of relief. When a positive photoresist is used, exposure through such a mask, followed by development, yields a line of photoresist with a width equal to the characteristic width of the null in intensity.
For 365 nm (Near UV) light in combination with a conventional photoresist, the width o the null in intensity is approximately 100 nm. A PDMS mask can be used to form a conformal, atomic scale contact with a flat, solid layer of photoresist. This contact is established spontaneously upon contact, without applied pressure. Generalized adhesion forces guide this process and provide a simple and convenient method of aligning the mask in angle and position in the direction normal to the photoresist surface, to establish perfect contact. There is no physical gap with respect to the photoresist.
PDMS is transparent to UV light with wavelengths greater than 300 nm. Passing light from a mercury lamp (where the main spectral lines are at 355 - 365 nm) through the PDMS
while it is in conformal contact with a layer of photoresist exposes the photoresist to the intensity distribution that forms at the mask.
[00151 Yasuhisa Inao, in a presentation entitled "Near-Field Lithography as a prototype nano-fabrication tool", at the 32nd International Conference on Micro and Nano Engineering in 2006, described a step-and-repeat near-field nanolithography developed by Canon, Inc. Near-field lithography (NFL) is used, where the distance between a mask and the photoresist to which a pattern is to be transferred are as close as possible. The initial distance between the mask and a wafer substrate was set at about 50 m. The patterning technique was described as a "tri-layer resist process", using a very thin photoresist. A pattern transfer mask was attached to the bottom of a pressure vessel and pressurized to accomplish a "perfect physical contact" between the mask and a wafer surface. The mask was "deformed to fit to the wafer". The initial 50 m distance between the mask and the wafer is said to allows movement of the mask to another position for exposure and patterning of areas more than 5 mm x 5mm. The patterning system made use of i-line (365 nm) radiation from a mercury lamp as a light source. A
successful patterning of a 4 inch silicon wafer with structures smaller than 50 nm was accomplished by such a step-and-repeat method.
[00161 In an article entitled "Large-area patterning of 50 nm structures on flexible substrates using near-field 193 nm radiation", JVST B 21 (2002), at pages 78 -81, Kunz et al. applied near-field phase shift mask lithography to the nanopatterning of flexible sheets (Polyimide films) using rigid fused silica masks and deep UV wavelength exposure. In a subsequent article entitled "Experimental and computational studies of phase shift lithography with binary elastomeric masks", JVST B 24(2) (2006) at pages 828 - 835, Maria et al. present experimental and computational studies of a phase shifting photolithographic technique that uses binary elastomeric phase masks in conformal contact with layers of photoresist. The work incorporates optimized masks formed by casting and curing prepolymers to the elastomer poly(dimethylsiloxane) against anisotropically etched structures of single crystal silicon on Si02/Si. The authors report on the capability of using the PDMS phase mask to form resist features in the overall geometry of the relief on the mask.
[00171 U.S. Patent No. 6,753,131 to Rogers et al, issued June 22, 2004, titled "Transparent Elastomeric, Contact-Mode Photolithography Mask, Sensor, and Wavefront Engineering Element", describes a contact-mode photolithography phase mask which includes a diffracting surface having a plurality of indentations and protrusions. The protrusions are brought into contact with a surface of a positive photoresist, and the surface is exposed o electromagnetic radiation through the phase mask. The phase shift due to radiation passing through indentations as opposed to the protrusions is essentially complete. Minima in intensity of electromagnetic radiation are thereby produced at boundaries between the indentations and protrusions. The elastomeric mask conforms well to the surface of the photoresist, and following development of the photoresist, features smaller than 100 nm can be obtained.(Abstract) In one embodiment, reflective plates are used exterior to the substrate and the contact mask, so radiation will be bounced to a desired location at a shifted phase. In another embodiment, the substrate may be shaped in a manner which causes a deformation of the phase shifting mask, affecting the behavior of the phase shifting mask during exposure.
[0018] Near Field Surface Plasmon Lithography (NFSPL) makes use of near-field excitation to induce photochemical or photophysical changes to produce nanostructures.
The main near-field technique is based on the local field enhancement around metal nanostructures when illuminated at the surface plasmon resonance frequency.
Plasmon printing consists of the use of plasmon guided evanescent waves through metallic nanostructures to produce photochemical and photophysical changes in a layer below the metallic structure. In particular, visible exposure (?, = 410 nm) of silver nanoparticles in close proximity to a thin film of a g-line photoresist (AZ- 1813 available from AZ-Electronic Materials, MicroChemicals GmbH, Ulm, Germany) can produce selectively exposed areas with a diameter smaller than x./20. W. Srituravanich et al. in an article entitled "Plasmonic Nanolithography", Nanoletters V4, N6 (2004), pp. 1085 -1088, describes the use of near UV light ( X = 230 nm - 350 nm) to excite SPs on a metal substrate, to enhance the transmission through subwavelength periodic apertures with effectively shorter wavelengths compared to the excitation light wavelength. A
plasmonic mask designed for lithography in the UV range is composed of an aluminum layer perforated with 2 dimensional periodic hole arrays and two surrounding dielectric layers, one on each side. Aluminum is chosen since it can excite the SPs in the UV
range. Quartz is employed as the mask support substrate, with a poly(methyl methacrylate) spacer layer which acts as adhesive for the aluminum foil and as a dielectric between the aluminum and the quartz. Poly(methyl methacrylate is used in combination with quartz, because their transparency to UV light at the exposure wavelength (i-line at 365 nm) and comparable dielectric constants (2.18 and 2.30, quartz and PMMA, respectively). A sub-100 nm dot array pattern on a 170 nm period has been successfully generated using an exposure radiation of 365 nm wavelength.
Apparently the total area of patterning was about 5 pm x 5 m, with no scalability issues discussed in the paper.
[0019] Joseph Martin has suggested a proximity masking device for Near-filed lithography in US 5,928,815, where cylindrical block covered with metal film for light internal reflection is used for directing light to the one end of the cylinder (base of the cylinder), which contains a surface relief pattern used for Near-field exposure. This block is kept in some proximity distance ("very small, but not zero") from the photoresist on the sample. Cylinder is translated in horizontal direction using some precise mechanism, which is used to pattern photoresist area.
100201 The only published idea about using rollers for optical lithography can be found in the Japanese Unexamined Patent Publication, No. 59200419A, published November 13, 1984, titled "Large Area Exposure Apparatus". Toshio Aoki et al.
described the use of a transparent cylindrical drum which can rotate and translate with an internal light source and a film of patterned photomask material attached on the outside of the cylindrical drum. A film of a transparent heat reflective material is present on the inside of the drum. A substrate with an aluminum film on its surface and a photoresist overlying the aluminum film is contacted with the patterned photomask on the drum surface and imaging light is passed through the photomask to image the photoresist on the surface of the aluminum film. The photoresist is subsequently developed, to provide a patterned photoresist. The patterned photoresist is then used as an etch mask for an aluminum film present on the substrate.
[00211 There is no description regarding the kinds of materials which were used as a photomask film or as a photoresist on the surface of the aluminum film. A
high pressure mercury lamp light source (500 W) was used to image the photoresist overlying the aluminum film. Glass substrates about 210 mm (8.3 in.) x 150 mm (5.9 in.) and about 0.2 mm (0.008.in.) thick were produced using the cylindrical drum pattern transfer apparatus. The feature size of the pattern transferred using the technique was about 500 m2, which was apparently a square having a dimension of about 22.2 m x 22.2 gm.
This feature size was based on the approximate pixel size of an LCD display at the time the patent application was filed in 1984. The photomask film on the outside of the cylindrical drum was said to last for approximately 140,000 pattern transfers.
The contact lithography scheme used by Toshio Aoki et al. is not capable of producing sub-micron features.
[0022] It does not appear that an nanoimprinting methods (thermal or UV-cured) or soft lithography using printing with SAM materials are highly manufacturable processes.
In general, the imprinting method creates deformation of the substrate material due to the thermal treatment (thermal NIL, for example) or shrinkage of pattern features upon polymer curing (UV-cured polymeric features). Moreover, due to the application of pressure (hard contact) between a stamp and a substrate, defects are essentially unavoidable, and a stamp has a very limited lifetime. Soft lithography does have an advantage in that it is thermal and stress-free printing technology. However, the use of a SAM as an "ink" for a sub-100 nm pattern is very problematic due to the drifting of molecules over the surface, and application over large areas has not been proved experimentally.
[0023] Earlier authors have suggested a method of nanopatterning large areas of rigid and flexible substrate materials based on near-field optical lithography described in Patent applications W02009094009 and US20090297989, where a rotatable cylindrical or cone-shaped mask is used to image a radiation-sensitive material. The nanopatterning technique makes use of Near-Field photolithography, where the mask used to pattern the substrate is in contact with the substrate. The Near-Field photolithography may make use of an elastomeric phase-shifting mask, or may employ surface plasmon technology, where a rotating cylinder surface comprises metal nano holes or nanoparticles.
[0024] SUMMARY
[0025] Embodiments of the invention pertain to methods and apparatus useful in the nanopatterning of large area substrates, rigid flat or curved objects or flexible films. The nanopatterning technique makes use of Near-Field UV photolithography, where the mask used to pattern the substrate is in contact with the substrate. The Near-Field photolithography may include a phase-shifting mask or surface plasmon technology.
The Near-field mask is fabricated from a flexible film, which is nanostructured in accordance with the desired pattern. In phase-shift method, one can use nanostructuctured elastomeric film, for example, Polydimethylsiloxane (PDMS) film.
Nanostructuring can be done using laser treatment, selective etching or other available techniques, or it can be done by replication (molding, casting) from the nanostructured "masters", which are fabricated using known nanofabrication methods (like, e-beam writing, holographic lithography, direct laser writing or Nanoimprint step-and-repeat or roll-to-roll lithography). This film can be supported by another transparent flexible film (carrier). In plasmonic method one can use a film with metal layer having nanohole structure, created using one of the abovementioned methods or by depositing metal nanoparticles, for example, deposited from a colloid solution. In order to provide uniform contact area for near-field lithography we rely on Van-der-Vaals forces of stiction between elastomeric film and photoresist layer on the substrate. Alternatively, a transparent cylinder is used to provide controllable contact between nanostructured film and a substrate. Such cylinder may have flexible walls and can be pressurized by a gas to provide controllable pressure between a nanostructured film and a substrate.
[0026] BRIEF DESCRIPTION OF THE DRAWINGS
[0027] So that the manner in which the exemplary embodiments of the present invention are attained is clear and can be understood in detail, with reference to the particular description provided above, and with reference to the detailed description of exemplary embodiments, applicants have provided illustrating drawings. It is to be appreciated that drawings are provided only when necessary to understand exemplary embodiments of the invention and that certain well known processes and apparatus are not illustrated herein in order not to obscure the inventive nature of the subject matter of the disclosure.
[0028] Figure 1 A shows a cross-sectional view of an embodiment of a flexible nanostructured film 1, having a phase-shift mask properties. Surface relief nanostructure 3 is fabricated on one of the surfaces of the film 2.
[00291 Figure 1 B shows a cross-sectional view of an embodiment of a flexible nanostructured film 1, having a plasmonic mask properties. Array of nanoholes are created in the film or array of nanoparticles are deposited on it's surface.
[00301 Figure 2 shows a suggested nanopatterning system prior to starting the process. A nanostructured film 1 is wrapped around support drums 4 and 5.
Substrate 6 has a photoresist layer 7 deposited on it's surface.
[00311 Figure 3 shows another embodiment where nanostructured film 1 can be rolled from one roll 4 to another roll 5.
[00321 Figure 4 shows a starting point of the process, when a film 1 is brought to contact with a photoresist 7 using movable arm 8.
[00331 Figure 5 shows the patterning process, when the arm 8 is removed from the film-substrate contact, substrate 6 is translating in one direction, and UV light source 7 is illuminating the contact zone between a film and a substrate.
[00341 Figure 6 shows another embodiment, where nanopatterned film is in contact with the substrate in quite wide surface area.
[00351 Figure 7 shows the embodiment, where the transparent cylinder 11 is used to bring nanostructured film 1 in contact with photoresist 7 on the substrate 6.
[00361 Figure 8 shows the embodiment, where the substrate is a flexible film 12, which can be translated from one roll 14 to another 13.
[00371 Figure 9 shows the embodiment, where the substrate is nanopatterned from the both sides [00381 DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS
[00391 As a preface to the detailed description, it should be noted that, as used in this specification and the appended claims, the singular forms "a", "an", and "the"
include plural referents, unless the context clearly dictates otherwise.
100401 When the word "about" is used herein, this is intended to mean that the nominal value presented is precise within 10 %.
[00411 Embodiments of the invention relate to methods and apparatus useful in the nanopatterning of large area substrates, where a flexible nanostructured film is used to image a radiation-sensitive material. The nanopatterning technique makes use of near-field photolithography, where the wavelength of radiation used to image a radiation-sensitive layer on a substrate is 650 nm or less, and where the mask used to pattern the substrate is in contact with the substrate. The near-field photolithography may make use of a phase-shifting mask, or may employ surface plasmon technology, where a metal layer on movable flexible film's surface comprises nano holes, or metal nanoparticles are dispersed on the surface of such flexible film. The detailed description provided below is just a sampling of the possibilities which will be recognized by one skilled in the art upon reading the disclosure herein.
[00421 One of the embodiments suggests a phase-shift mask approach and is implemented by flexible nanostructured film. The problem of providing a uniform and permanent contact between such flexible nanostructured film and a substrate is solved by manufacturing this film from a material capable of creating strong but temporary bond to photoresist layer. One example of such material is an elastomer, for example Polydimethylsiloxane (PDMS). A PDMS film can be used to form a conformal, atomic scale contact with a flat, solid layer of photoresist. This contact is established spontaneously upon contact, without applied pressure. Schematic of such film is shown on Fig. 1 A, where film 2 has a nanostructure 3 in the form of transparent surface relief.
[00431 Film 2 can be made from one material (for example, PDMS) or be a composite or multi-layer comprised of more than one material, for example, nanostructured PDMS can be laminated or deposited on a transparent and flexible support film. Such support film can be made of polycarbonate (PC), polymethylmethacrylate (PMMA), Polyethylene terephthalate (PET), amorphous fluoric-polymer, for example CYTOP, and other materials. Deposition of PDMS on transparent flexible support film can be done using one of available techniques, for example, dipping, spraying or casting.
Support film can be treated using oxygen plasma, UV ozone, corona discharge or adhesion promoters, like silanes to promote better adhesion between elastomeric film and a polymer film support.
[00441 Another embodiment of "sticky" material, which can be used instead of elastomer, to create a dynamic contact with photoresist is cross-linked silane material.
Such material can be deposited from a silane precursor (usually used to deposit self-assembled monolayers, SAMs) with abundance of water/moisture. For example, DDMS
(dichlorodimethylsilane) creates very sticky surface if deposited with abundance of moisture. In this embodiment, the carrier layer is nanostructured using one of known nanostructuring techniques (preferably, Roll-to-Roll Nanoimprint lithography) and then coated with silane material to provide "stickyness".
[00451 A surface relief for phase-shift lithography can be created in the elastomeric or silane film using any of the following methods: First, nanostructured "master" can be obtained using one of the available nanofabrication techniques (deep-UV
stepper, e-beam, ion-beam, holography, laser treatment, embossing, Nanoimprint, and others). Second, a replica of desired nanostructure can be obtained from such master on the surface of elastomeric film using, for example, casting or molding, in roll-to-roll or step-and-repeat mode.
[00461 Another embodiment suggests that the carrier layer is nanostructured using one of known nanostructuring techniques (preferably, Roll-to-Roll Nanoimprint lithography) and then coated with elastomer material (like PDMS) or silane material (like DDMS) to provide "stickyness".
[00471 Nanostructure of such mask can be designed to act as phase shifter, and in this case the height of the features should be proportional ton. For example, PDMS
material having refractive index 1.43 for wavelength of exposure 365 rim should have a features with depth about 400 nm to cause a phase shift effect. In this case a local minima of light intensity will happen at the step edges of the mask. For example, lines from 20 nm to 150 nm can be obtained in photoresist corresponding to the positions of surface relief edges in the phase-shift mask. Thus this lithography has image reduction properties, and nanostructures can be achieved using much larger features on the mask.
[0048] Another embodiment is using nanostructure on flexible mask to act as 1:1 replication mask. As it was demonstrated in previous publications, for example, Tae-Woo Lee, at al in Advanced Functional Materials, 2005, 15,1435., depending on specific parameters of photoresist exposure and development, one can achieve 1:1 replication of the features from mask to photoresist or feature size reduction using phase-shift on the surface relief edges on the same elastomeric mask. Specifically, underexposure or underdevelopment against the normal exposure doze and development time, would cause a significant differential between an effective exposure doze in non-contact and contact regions of the mask. This can be used to create al :1 replication from mask to photoresist in positive or negative tone (depending on photoresist type).
[0049] Another embodiment suggests a plasmonic mask approach. Such plasmonic film could be a flexible metal film, shown on Fig 1B, which has arrays of nanoholes according to the desired pattern. Alternatively, metal layer is deposited on flexible transparent film. Metal layer patterning can be done using one of available nanopatterning techniques (deep-UV stepper, e-beam, ion-beam, holography, laser treatment, embossing, Nanoimprint, and others), followed by metal layer etching.
[0050] Alternatively, nanopattern can be fabricated using abovementioned methods on a transparent film, and then metal material can be deposited over nanopatterned resist, followed by metal layer lift-off.
[0051] And yet another embodiment uses metal nanoparticles dispensed in controllable way over the surface of the flexible transparent film to create a plasmonic mask. For example, metal nanoparticles can be mixed with PDMS material in a liquid phase prior to depositing it onto the flexible transparent support film.
Alternatively, metal nanoparticles can be deposited onto nanotemplate fabricated in elastomeric layer.
100521 Nanostructured film can be wrapped around support drums 4 and 5, and kept at a controllable tension, as shown on Fig. 2 .
[00531 Alternatively, nanostructured films can be rolled from one roll 4 to another roll 5, as shown on Fig. 3.
[00541 The process starts by bringing a nanostructured film 1 in contact with the photoresist 7 deposited on the substrate 6, using a movable arm 8, as shown on Fig. 4.
Such contact will engage Van-der-Vaals forces and make film temporary stick to the photoresist. Then, as it is shown on Fig. 5, movable arm 8 is removed from the film-substrate contact, light source, which may include optical focusing, collimating or filtering system, 9 is turned on, providing exposure to the area of film-substrate contact, and substrate 6 is translated in one direction using constant or variable speed. Such translation will make film to move as well in the direction of the translation, exposing different parts of the substrate to the same or different pattern, depending on the nanostructure fabricated on the film.
[00551 Another embodiment, presented on Fig. 6 shows nanostructured film in contact with the photoresist across a wider area. This area of contact starts to move as soon as substrate begins translation in one direction. The width of contact area between a nanostructured film and a substrate can be changed by changing a relative position between the substrate 6 and drums 4 and 5, and also by changing tackiness of the nanostructured film material. This configuration also allows to increase area of nanostructured film exposure to light, which helps to improve a throughput of the method due to increase in dynamic exposure dosage.
[00561 When nanostructured film surface contact is not tacky enough (like, for example, in case of plasmonic mask approach) the movable arm is not retracted, keeping controllable and uniform pressure between the nanostructured film and a substrate. For example, the movable arm can be fabricated in the form of transparent cylinder 11, as shown on Fig. 7. This cylinder is actuated by the mechanical system providing controllable and uniform contact between nanostructured film and a substrate.
In that case, source of illumination 9 could be located inside such cylinder.
[00571 Such cylinder can be made from transparent flexible material and pressurized by a gas. In such case the area of contact and pressure between a mask and a substrate can be controlled by gas pressure.
[00591 The gas can be flown through flexible-wall cylinder constantly such as to create necessary controllable pressure and at the same time cool down the light source positioned inside this cylinder.
[00601 Disclosed nanopatterning methods can be used to pattern flexible films 12, as shown on Fig. 8, which can be translated from one roll 14 to another roll 13 during exposure.
[00611 Disclosed nanopatterning methods can be used to pattern rigid or flexible materials from the both sides, as shown on Fig. 9 100621 Disclosed nanopatterning methods can be used to pattern non-flat or curved substrates, as shown on Fig. 10. Fig. 10a shows how cylinder on a movable arm is following the curvature of the substrate, and Fig. 1 Ob shows how flexible-wall gas pressurized cylinder is following the curvature of the substrate. In latter case, instead of moving arm in vertical direction, one can adjust pressure inside cylinder to accommodate substrate height deviation caused by curvature.
Claims (31)
1. A method of nanopatterning comprising:
a) providing a substrate having a radiation-sensitive layer on said substrate surface;
b) providing a movable nanostructured film, c) contacting said nanostructured film with said radiation-sensitive layer on said substrate along a surface of contact;
d) distributing radiation through said contact, while translating said substrate against said film
a) providing a substrate having a radiation-sensitive layer on said substrate surface;
b) providing a movable nanostructured film, c) contacting said nanostructured film with said radiation-sensitive layer on said substrate along a surface of contact;
d) distributing radiation through said contact, while translating said substrate against said film
2. A method in accordance with Claim 1, wherein said nanostructured film causes modulation of light intensity in the plane of radiation-sensitive layer
3. A method in accordance with Claim 2, wherein said nanostructured film has a surface relief
4. A method in accordance with Claim 3, wherein said nanostructured film is a phase-shifting mask which causes radiation to form an interference pattern in said radiation-sensitive layer
5. A method in accordance with Claim 2, wherein said nanostructured film is made of conformable elastomeric material
6. A method in accordance with Claim 2, wherein said nanostructured film is made of a more than one layer of transparent flexible materials
7. A method in accordance with Claim 6, wherein the outer layer is made of elastomeric material
8. A method in accordance with Claim 6, wherein the outer layer is made of silane material
9. A method in accordance with Claim 3, wherein said surface relief is fabricated by molding or casting from nanostructured master substrate
10. A method in accordance with Claim 2, wherein said conformable nanostructured film is a plasmonic mask.
11. A method according with Claim 10, wherein said plasmonic mask is made of metal film having arrays of nanoholes
12. A method according with Claim 10, wherein said plasmonic mask is made of with nanopatterned metal layer, deposited or laminated on transparent flexible film
13. A method according with Claim 10, wherein said plasmonic mask is made by array of metal nanoparticles deposited on transparent flexible film
14. A method in accordance with Claim 1, wherein said contacting between nanostructured film and a radiation-sensitive layer is done using movable arm.
15. A method in accordance with Claim 14, wherein said movable arm is removed from the contact during photosensitive layer exposure.
16. A method in accordance with Claim 14, wherein said movable arm is a cylinder, and such cylinder is rotated while in contact with the nanostructured film
17. A method in accordance with Claim 16, wherein said cylinder has flexible walls and is pressurized by a gas
18. A method in accordance with Claim 16, wherein a light source is positioned inside such cylinder
19. A method in accordance with Claim 1, wherein said substrate is translated in a direction toward or away from a contact line of said nanostructured film during distribution of radiation from said contact line.
20. A method in accordance with Claim 1, wherein said nanostructured film is moved in a closed loop
21. A method in accordance with Claim 1, wherein said nanostructured film is translated from roll to roll.
22. A method in accordance with Claim 1, wherein said substrate is rigid plate
23. A method in accordance with Claim 1, wherein said substrate is has a curvature
24. A method in accordance with Claim 1, wherein said substrate is a flexible film.
25. A method in accordance with Claim 1, wherein an additional nanostructured flexible film and a light source are provided on the other side of the substrate coated with photo-sensitive layer on both surfaces for nanopatterning on both sides of the substrate
26. An apparatus to carry out nanopatterning, comprising:
a) a nanostructured film and b) a radiation source which supplies radiation of a wavelength of 650 nm or less through a portion of said nanostructured film, while said portion is in contact with a radiation-sensitive layer of material.
a) a nanostructured film and b) a radiation source which supplies radiation of a wavelength of 650 nm or less through a portion of said nanostructured film, while said portion is in contact with a radiation-sensitive layer of material.
27. An apparatus in accordance with Claim 26, wherein nanostructured film is a polymer having surface relief
28. An apparatus in accordance with Claim 26, wherein nanostructured film is a perforated metal film or polymer film with metal nanoparticles
29. An apparatus in accordance with Claim 26, wherein said nanostructured film has more than one layer
30. An apparatus in accordance with Claim 26, wherein a movable cylinder is provided to control nanostructured film contact with said radiation-sensitive layer
31. An apparatus in accordance with Claim 30, wherein such cylinder is pressurized by a gas
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| US33587710P | 2010-01-12 | 2010-01-12 | |
| US61/335,877 | 2010-01-12 | ||
| PCT/US2011/000029 WO2011087896A2 (en) | 2010-01-12 | 2011-01-07 | Nanopatterning method and apparatus |
Publications (1)
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| CA2786489A1 true CA2786489A1 (en) | 2011-07-21 |
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| JP (1) | JP2013517625A (en) |
| KR (1) | KR101430849B1 (en) |
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| US9465296B2 (en) | 2010-01-12 | 2016-10-11 | Rolith, Inc. | Nanopatterning method and apparatus |
| EP2609467A4 (en) | 2010-08-23 | 2014-07-30 | Rolith Inc | Mask for near-field lithography and fabrication the same |
| WO2013158543A1 (en) * | 2012-04-17 | 2013-10-24 | The Regents Of The University Of Michigan | Methods for making micro- and nano-scale conductive grids for transparent electrodes and polarizers by roll to roll optical lithography |
| TWI494537B (en) * | 2013-01-23 | 2015-08-01 | Hitachi High Tech Corp | A pattern measuring method, a device condition setting method of a charged particle beam device, and a charged particle beam device |
| CN103199268B (en) * | 2013-03-11 | 2016-02-03 | 中国科学院上海高等研究院 | Based on the ordered nano-structure film of nanometer embossing, the preparations and applicatio of ordered nano-structure membrane electrode |
| CN103268056A (en) * | 2013-05-10 | 2013-08-28 | 西安建筑科技大学 | Flexible mask plate and making method thereof |
| CN103576447A (en) * | 2013-11-05 | 2014-02-12 | 无锡英普林纳米科技有限公司 | Fluorine-containing polymer ultraviolet nano-coining template and preparation method thereof |
| KR101566263B1 (en) * | 2014-02-28 | 2015-11-05 | 연세대학교 산학협력단 | super resolution film and lithography method using thereof |
| US9244356B1 (en) | 2014-04-03 | 2016-01-26 | Rolith, Inc. | Transparent metal mesh and method of manufacture |
| WO2015183243A1 (en) | 2014-05-27 | 2015-12-03 | Rolith, Inc. | Anti-counterfeiting features and methods of fabrication and detection |
| CN104698745B (en) * | 2015-02-11 | 2019-04-12 | 广州中国科学院先进技术研究所 | A kind of controllable nanometer blocks production method of size |
| JP7265865B2 (en) * | 2015-11-03 | 2023-04-27 | マテリオン コーポレイション | Filter array with focused light with reduced stray light |
| EP3619160B1 (en) * | 2017-05-03 | 2022-03-09 | Nanotech Security Corp. | Methods for micro and nano fabrication by selective template removal |
| JP6931403B2 (en) | 2017-05-25 | 2021-09-01 | マジック リープ， インコーポレイテッドＭａｇｉｃ Ｌｅａｐ，Ｉｎｃ． | Double-sided imprinting |
| US10890769B2 (en) | 2017-10-26 | 2021-01-12 | Magic Leap, Inc. | Augmented reality display having liquid crystal variable focus element and roll-to-roll method and apparatus for forming the same |
| CN109901362B (en) * | 2017-12-11 | 2022-04-19 | 中国科学院光电技术研究所 | Secondary imaging optical lithography method and apparatus |
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| US6518189B1 (en) * | 1995-11-15 | 2003-02-11 | Regents Of The University Of Minnesota | Method and apparatus for high density nanostructures |
| US6236033B1 (en) * | 1998-12-09 | 2001-05-22 | Nec Research Institute, Inc. | Enhanced optical transmission apparatus utilizing metal films having apertures and periodic surface topography |
| JP2000241648A (en) * | 1999-02-17 | 2000-09-08 | Sony Corp | Apparatus and method for manufacturing optical component, and optical component |
| JP2005025860A (en) * | 2003-07-02 | 2005-01-27 | Ricoh Co Ltd | Optical probe and optical pickup unit |
| JP2006133550A (en) * | 2004-11-08 | 2006-05-25 | Toshiba Corp | Image erasing apparatus and image erasing method |
| JP4789039B2 (en) * | 2005-06-10 | 2011-10-05 | 独立行政法人産業技術総合研究所 | Nanoimprint equipment |
| JP2008116514A (en) * | 2006-10-31 | 2008-05-22 | Mitsubishi Paper Mills Ltd | Continuous exposure apparatus |
| JP4406452B2 (en) * | 2007-09-27 | 2010-01-27 | 株式会社日立製作所 | Belt-shaped mold and nanoimprint apparatus using the same |
| CA2709718A1 (en) * | 2008-01-22 | 2009-07-30 | Rolith, Inc. | Large area nanopatterning method and apparatus |
| US8192920B2 (en) * | 2008-04-26 | 2012-06-05 | Rolith Inc. | Lithography method |
| JP2009290504A (en) * | 2008-05-29 | 2009-12-10 | Kyocera Corp | Portable electronic instrument |
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- 2011-01-07 MX MX2012008072A patent/MX2012008072A/en not_active Application Discontinuation
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| KR20120123413A (en) | 2012-11-08 |
| WO2011087896A3 (en) | 2012-01-12 |
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| JP2013517625A (en) | 2013-05-16 |
| KR101430849B1 (en) | 2014-09-22 |
| WO2011087896A2 (en) | 2011-07-21 |
| EP2524266A2 (en) | 2012-11-21 |
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| RU2012134344A (en) | 2014-02-20 |
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