WO2011087896A2 - Procédé de nanostructuration et appareil - Google Patents

Procédé de nanostructuration et appareil Download PDF

Info

Publication number
WO2011087896A2
WO2011087896A2 PCT/US2011/000029 US2011000029W WO2011087896A2 WO 2011087896 A2 WO2011087896 A2 WO 2011087896A2 US 2011000029 W US2011000029 W US 2011000029W WO 2011087896 A2 WO2011087896 A2 WO 2011087896A2
Authority
WO
WIPO (PCT)
Prior art keywords
accordance
film
substrate
nanostructured
radiation
Prior art date
Application number
PCT/US2011/000029
Other languages
English (en)
Other versions
WO2011087896A3 (fr
Inventor
Boris Kobrin
Original Assignee
Boris Kobrin
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Boris Kobrin filed Critical Boris Kobrin
Priority to MX2012008072A priority Critical patent/MX2012008072A/es
Priority to EP11733170A priority patent/EP2524266A2/fr
Priority to CN2011800058810A priority patent/CN102859441A/zh
Priority to JP2012548955A priority patent/JP2013517625A/ja
Priority to KR1020127021047A priority patent/KR101430849B1/ko
Priority to RU2012134344/28A priority patent/RU2012134344A/ru
Priority to AU2011205582A priority patent/AU2011205582A1/en
Priority to CA2786489A priority patent/CA2786489A1/fr
Publication of WO2011087896A2 publication Critical patent/WO2011087896A2/fr
Publication of WO2011087896A3 publication Critical patent/WO2011087896A3/fr
Priority to US13/546,436 priority patent/US9465296B2/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2035—Exposure; Apparatus therefor simultaneous coating and exposure; using a belt mask, e.g. endless
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor

Definitions

  • Embodiments of the invention relate to nanopatterning methods which can be used to pattern large substrates or substrates such as films which may be sold as rolled goods.
  • Other embodiments of the invention pertain to apparatus which may be used to pattern substrates, and which may be used to carry out method embodiments, including the kind described.
  • Nanostructuring is necessary for many present applications and industries and for new technologies which are under development. Improvements in efficiency can be achieved for current applications in areas such as solar cells and LEDs, and in next generation data storage devices, for example and not by way of limitation.
  • Nanostructured substrates may be fabricated using techniques such as e-beam direct writing, Deep UV lithography, nanosphere lithography, nanoimprint lithography, near-filed phase shift lithography, and plasmonic lithography, for example.
  • Nanoimprint Lithography creates patterns by mechanical deformation of an imprint resist, followed by subsequent processing.
  • the imprint resist is typically a monomeric or polymeric formulation that is cured by heat or by UV light during the imprinting.
  • TNIL Thermoplastic Nanoimprint Lithography
  • SFIL Flash Nanoimprint Lithography
  • TNIL is the earliest and most mature nanoimprint lithography.
  • a thin layer of imprint resist (a thermoplastic polymer) is spin coated onto a sample substrate.
  • a mold which has predefined topological patterns, is brought into contact with the sample, and pressed against the sample under a given pressure.
  • the pattern on the mold is pressed into a thermoplastic polymer film melt.
  • the mold is separated from the sample and the imprint resist is left on the sample substrate surface. The pattern does not pass through the imprint resist; there is a residual thickness of unchanged thermoplastic polymer film remaining on the sample substrate surface.
  • a pattern transfer process such as reactive ion etching, can be used to transfer the pattern in the resist to the underlying substrate.
  • the variation in the residual thickness of unaltered thermoplastic polymer film presents a problem with respect to uniformity and optimization of the etch process used to transfer the pattern to the substrate.
  • a UV curable liquid resist is applied to the sample substrate and the mold is made of a transparent substrate, such as fused silica. After the mold and the sample substrate are pressed together, the resist is cured using UV light, and becomes solid. After separation of the mold from the cured resist material, a similar pattern to that used in TNIL may be used to transfer the pattern to the underlying sample substrate. Dae-Geun Choi from Korea Institute of Machinery suggested using fluorinated organic-inorganic hybrid mold as a stamp for Nanoimprint lithography, which does not require anti-stiction layer for demolding it from the substrate materials.
  • Nanoimprint lithography is based on mechanical deformation of resist
  • challenges include template lifetime, throughput rate, imprint layer tolerances, and critical dimension control during transfer of the pattern to the underlying substrate.
  • the residual, non-imprinted layer which remains after the imprinting process requires an additional etch step prior to the main pattern transfer etch. Defects can be produced by incomplete filling of negative patterns and the shrinkage phenomenon which often occurs with respect to polymeric materials. Difference in thermal expansion coefficients between the mold and the substrate cause lateral strain, and the strain is concentrated at the corner of the pattern.
  • the strain induces defects and causes fracture defects at the base part of the pattern mold releasing step.
  • Soft lithography is an alternative to Nanoimprint lithography method of micro and nano fabrication. This technology relates to replica molding of self assembling monolayers.
  • an elastomeric stamp with patterned relief structures on its surface is used to generate patterns and structures with feature sizes ranging from 30 nm to 100 nm.
  • the most promising soft lithography technique is microcontact printing ⁇ CP) with self-assembled monolayers (SAMS).
  • the basic process of ⁇ CP includes: 1. A polydimethylsiloxane (PDMS) mold is dipped into a solution of a specific material, where the specific material is capable of forming a self-assembled monolayer (SAM). Such specific materials may be referred to as an ink.
  • the specific material sticks to a protruding pattern on the PDMS master surface.
  • the PDMS mold with the material- coated surface facing downward, is contacted with a surface of a metal-coated substrate such as gold or silver, so that only the pattern on the PDMS mold surface contacts the metal-coated substrate.
  • the specific material forms a chemical bond with the metal, so that only the specific material which is on the protruding pattern surface sill remain on the metal-coated surface after removal of the PDMS mold.
  • the specific material forms a SAM on the metal-coated substrate which extends above the metal-coated surface approximately one to two nanometers (just like ink on a piece of paper).
  • the PDMS mold is removed from the metal-coated surface of the substrate, leaving the patterned SAM on the metal-coated surface.
  • Optical Lithography does not use mechanical deformation or phase change of resist materials, like Nanoimprint lithography, and does not have materials
  • NFPSL Near-field phase shift lithography
  • Bringing an elastomeric phase mask into contact with a thin layer of photoresist causes the photoresist to "wet" the surface of the contact surface of the mask. Passing UV light through the mask while it is in contact with the photoresist exposes the photoresist to the distribution of light intensity that develops at the surface of the mask. In the case of a mask with a depth of relief that is designed to modulate the phase of the transmitted light by ⁇ , a local null in the intensity appears at the step edge of relief. When a positive photoresist is used, exposure through such a mask, followed by development, yields a line of photoresist with a width equal to the characteristic width of the null in intensity.
  • the width o the null in intensity is approximately 100 nm.
  • a PDMS mask can be used to form a conformal, atomic scale contact with a flat, solid layer of photoresist. This contact is established spontaneously upon contact, without applied pressure. Generalized adhesion forces guide this process and provide a simple and convenient method of aligning the mask in angle and position in the direction normal to the photoresist surface, to establish perfect contact. There is no physical gap with respect to the photoresist.
  • PDMS is transparent to UV light with wavelengths greater than 300 nm.
  • a pattern transfer mask was attached to the bottom of a pressure vessel and pressurized to accomplish a "perfect physical contact" between the mask and a wafer surface.
  • the mask was "deformed to fit to the wafer".
  • the initial 50 ⁇ distance between the mask and the wafer is said to allows movement of the mask to another position for exposure and patterning of areas more than 5 mm x 5mm.
  • the patterning system made use of i-line (365 nm) radiation from a mercury lamp as a light source.
  • a successful patterning of a 4 inch silicon wafer with structures smaller than 50 nm was accomplished by such a step-and-repeat method.
  • the work incorporates optimized masks formed by casting and curing prepolymers to the elastomer poly(dimethylsiloxane) against anisotropically etched structures of single crystal silicon on Si0 2 /Si.
  • the authors report on the capability of using the PDMS phase mask to form resist features in the overall geometry of the relief on the mask.
  • Transparent Elastomeric, Contact-Mode Photolithography Mask, Sensor, and Wavefront Engineering Element describes a contact-mode photolithography phase mask which includes a diffracting surface having a plurality of indentations and protrusions.
  • the protrusions are brought into contact with a surface of a positive photoresist, and the surface is exposed o electromagnetic radiation through the phase mask.
  • the phase shift due to radiation passing through indentations as opposed to the protrusions is essentially complete.
  • Minima in intensity of electromagnetic radiation are thereby produced at boundaries between the indentations and protrusions.
  • the elastomeric mask conforms well to the surface of the photoresist, and following development of the photoresist, features smaller than 100 nm can be obtained.
  • NFSPL Near Field Surface Plasmon Lithography
  • a g-line photoresist AZ-1813 available from AZ- Electronic Materials, MicroChemicals GmbH, Ulm, Germany
  • a plasmonic mask designed for lithography in the UV range is composed of an aluminum layer perforated with 2 dimensional periodic hole arrays and two surrounding dielectric layers, one on each side. Aluminum is chosen since it can excite the SPs in the UV range. Quartz is employed as the mask support substrate, with a poly(methyl
  • methacrylate spacer layer which acts as adhesive for the aluminum foil and as a dielectric between the aluminum and the quartz.
  • Poly(methyl methacrylate) is used in combination with quartz, because their transparency to UV light at the exposure wavelength (i-line at 365 nm) and comparable dielectric constants (2.18 and 2.30, quartz and PMMA, respectively).
  • a sub- 100 nm dot array pattern on a 170 nm period has been successfully generated using an exposure radiation of 365 nm wavelength. Apparently the total area of patterning was about 5 ⁇ x 5 ⁇ , with no scalability issues discussed in the paper.
  • Joseph Martin has suggested a proximity masking device for Near-filed lithography in US 5,928,815, where cylindrical block covered with metal film for light internal reflection is used for directing light to the one end of the cylinder (base of the cylinder), which contains a surface relief pattern used for Near-field exposure. This block is kept in some proximity distance (“very small, but not zero") from the photoresist on the sample. Cylinder is translated in horizontal direction using some precise mechanism, which is used to pattern photoresist area.
  • a transparent cylindrical drum which can rotate and translate with an internal light source and a film of patterned photomask material attached on the outside of the cylindrical drum.
  • a film of a transparent heat reflective material is present on the inside of the drum.
  • a substrate with an aluminum film on its surface and a photoresist overlying the aluminum film is contacted with the patterned photomask on the drum surface and imaging light is passed through the photomask to image the photoresist on the surface of the aluminum film.
  • the photoresist is subsequently developed, to provide a patterned photoresist.
  • the patterned photoresist is then used as an etch mask for an aluminum film present on the substrate.
  • the imprinting method creates deformation of the substrate material due to the thermal treatment (thermal NIL, for example) or shrinkage of pattern features upon polymer curing (UV-cured polymeric features). Moreover, due to the application of pressure (hard contact) between a stamp and a substrate, defects are essentially
  • a method of nanopatteming large areas of rigid and flexible substrate materials based on near-field optical lithography described in Patent applications WO2009094009 and US20090297989, where a rotatable cylindrical or cone-shaped mask is used to image a radiation-sensitive material.
  • the nanopatteming technique makes use of Near-Field photolithography, where the mask used to pattern the substrate is in contact with the substrate.
  • the Near-Field photolithography may make use of an elastomeric phase-shifting mask, or may employ surface plasmon technology, where a rotating cylinder surface comprises metal nano holes or nanoparticles.
  • Embodiments of the invention pertain to methods and apparatus useful in the nanopatteming of large area substrates, rigid flat or curved objects or flexible films.
  • the nanopatteming technique makes use of Near-Field UV photolithography, where the mask used to pattern the substrate is in contact with the substrate.
  • the Near-Field UV photolithography where the mask used to pattern the substrate is in contact with the substrate.
  • photolithography may include a phase-shifting mask or surface plasmon technology.
  • the Near-field mask is fabricated from a flexible film, which is nano structured in accordance with the desired pattern.
  • phase-shift method one can use nanostructuctured elastomeric film, for example, Polydimethylsiloxane (PDMS) film.
  • Nanostructuring can be done using laser treatment, selective etching or other available techniques, or it can be done by replication (molding, casting) from the nanostructured "masters", which are fabricated using known nanofabrication methods (like, e-beam writing, holographic lithography, direct laser writing or Nanoimprint step-and-repeat or roll-to-roll lithography).
  • This film can be supported by another transparent flexible film (carrier).
  • carrier In plasmonic method one can use a film with metal layer having nanohole structure, created using one of the abovementioned methods or by depositing metal nanoparticles, for example, deposited from a colloid solution.
  • a transparent cylinder is used to provide controllable contact between nanostructured film and a substrate. Such cylinder may have flexible walls and can be pressurized by a gas to provide controllable pressure between a nanostructured film and a substrate.
  • Figure 1 A shows a cross-sectional view of an embodiment of a flexible nanostructured film 1 , having a phase-shift mask properties.
  • Surface relief nanostructure 3 is fabricated on one of the surfaces of the film 2.
  • Figure IB shows a cross-sectional view of an embodiment of a flexible nanostructured film 1 , having a plasmonic mask properties. Array of nanoholes are created in the film or array of nanoparticles are deposited on it's surface.
  • Figure 2 shows a suggested nanopatterning system prior to starting the process.
  • a nanostructured film 1 is wrapped around support drums 4 and 5.
  • Substrate 6 has a photoresist layer 7 deposited on it's surface.
  • Figure 3 shows another embodiment where nanostructured film 1 can be rolled from one roll 4 to another roll 5.
  • Figure 4 shows a starting point of the process, when a film 1 is brought to contact with a photoresist 7 using movable arm 8.
  • Figure 5 shows the patterning process, when the arm 8 is removed from the film-substrate contact, substrate 6 is translating in one direction, and UV light source 7 is illuminating the contact zone between a film and a substrate.
  • Figure 6 shows another embodiment, where nanopatterned film is in contact with the substrate in quite wide surface area.
  • Figure 7 shows the embodiment, where the transparent cylinder 1 1 is used to bring nanostructured film 1 in contact with photoresist 7 on the substrate 6.
  • Figure 8 shows the embodiment, where the substrate is a flexible film 12, which can be translated from one roll 14 to another 13.
  • Figure 9 shows the embodiment, where the substrate is nanopatterned from the both sides
  • Embodiments of the invention relate to methods and apparatus useful in the nanopatterning of large area substrates, where a flexible nanostructured film is used to image a radiation-sensitive material.
  • the nanopatterning technique makes use of near- field photolithography, where the wavelength of radiation used to image a radiation- sensitive layer on a substrate is 650 nm or less, and where the mask used to pattern the substrate is in contact with the substrate.
  • the near-field photolithography may make use of a phase-shifting mask, or may employ surface plasmon technology, where a metal layer on movable flexible film's surface comprises nano holes, or metal nanoparticles are dispersed on the surface of such flexible film.
  • One of the embodiments suggests a phase-shift mask approach and is implemented by flexible nanostructured film.
  • the problem of providing a uniform and permanent contact between such flexible nanostructured film and a substrate is solved by manufacturing this film from a material capable of creating strong but temporary bond to photoresist layer.
  • a material capable of creating strong but temporary bond to photoresist layer is an elastomer, for example
  • PDMS Polydimefhylsiloxane
  • Fig. 1 A Schematic of such film is shown on Fig. 1 A, where film 2 has a nanostructure 3 in the form of transparent surface relief.
  • Film 2 can be made from one material (for example, PDMS) or be a composite or multi-layer comprised of more than one material, for example,
  • nanostructured PDMS can be laminated or deposited on a transparent and flexible support film.
  • a transparent and flexible support film can be made of polycarbonate (PC), polymethylmethacrylate (PMMA), Polyethylene terephthalate (PET), amorphous fluoric-polymer, for example CYTOP, and other materials.
  • Deposition of PDMS on transparent flexible support film can be done using one of available techniques, for example, dipping, spraying or casting.
  • Support film can be treated using oxygen plasma, UV ozone, corona discharge or adhesion promoters, like silanes to promote better adhesion between elastomeric film and a polymer film support.
  • silane material which can be used instead of elastomer, to create a dynamic contact with photoresist is cross-linked silane material.
  • Such material can be deposited from a silane precursor (usually used to deposit self- assembled monolayers, SAMs) with abundance of water/moisture.
  • SAMs self- assembled monolayers
  • DDMS dichlorodimethylsilane
  • the carrier layer is nanostructured using one of known nanostructuring techniques (preferably, Roll-to- oll Nanoimprint lithography) and then coated with silane material to provide "stickyness".
  • a surface relief for phase-shift lithography can be created in the elastomeric or silane film using any of the following methods: First, nanostructured "master" can be obtained using one of the available nanofabrication techniques (deep-UV stepper, e-beam, ion-beam, holography, laser treatment, embossing, Nanoimprint, and others). Second, a replica of desired nanostructure can be obtained from such master on the surface of elastomeric film using, for example, casting or molding, in roll-to-roll or step-and-repeat mode.
  • nanofabrication techniques deep-UV stepper, e-beam, ion-beam, holography, laser treatment, embossing, Nanoimprint, and others.
  • Second, a replica of desired nanostructure can be obtained from such master on the surface of elastomeric film using, for example, casting or molding, in roll-to-roll or step-and-repeat mode.
  • the carrier layer is nanostructured using one of known nanostructuring techniques (preferably, Roll-to-Roll Nanoimprint lithography) and then coated with elastomer material (like PDMS) or silane material (like DDMS) to provide "stickyness".
  • elastomer material like PDMS
  • silane material like DDMS
  • Nanostructure of such mask can be designed to act as phase shifter, and in this case the height of the features should be proportional to ⁇ .
  • PDMS material having refractive index 1.43 for wavelength of exposure 365 nm should have a features with depth about 400 nm to cause a phase shift effect.
  • a local minima of light intensity will happen at the step edges of the mask. For example, lines from 20
  • I nm to 150 nm can be obtained in photoresist corresponding to the positions of surface relief edges in the phase-shift mask.
  • this lithography has image reduction properties, and nanostructures can be achieved using much larger features on the mask.
  • Another embodiment is using nanostructure on flexible mask to act as 1 : 1 replication mask.
  • 1 : 1 replication mask As it was demonstrated in previous publications, for example, Tae-Woo Lee, at al in Advanced Functional Materials, 2005, 15,1435., depending on specific parameters of photoresist exposure and development, one can achieve 1 : 1 replication of the features from mask to photoresist or feature size reduction using phase-shift on the surface relief edges on the same elastomeric mask. Specifically, underexposure or underdevelopment against the normal exposure doze and development time, would cause a significant differential between an effective exposure doze in non-contact and contact regions of the mask. This can be used to create al : 1 replication from mask to photoresist in positive or negative tone (depending on photoresist type).
  • plasmonic film could be a flexible metal film, shown on Fig IB, which has arrays of nanoholes according to the desired pattern.
  • metal layer is deposited on flexible transparent film.
  • Metal layer patterning can be done using one of available nanopatterning techniques (deep-UV stepper, e-beam, ion-beam, holography, laser treatment, embossing, Nanoimprint, and others), followed by metal layer etching.
  • nanopattern can be fabricated using abovementioned methods on a transparent film, and then metal material can be deposited over
  • nanopatterned resist followed by metal layer lift-off.
  • metal nanoparticles dispensed in controllable way over the surface of the flexible transparent film to create a plasmonic mask.
  • metal nanoparticles can be mixed with PDMS material in a liquid phase prior to depositing it onto the flexible transparent support film.
  • metal nanoparticles can be deposited onto nanotemplate fabricated in elastomeric layer.
  • Nanostructured film can be wrapped around support drums 4 and 5, and kept at a controllable tension, as shown on Fig. 2 .
  • nanostructured films can be rolled from one roll 4 to another roll 5, as shown on Fig. 3.
  • the process starts by bringing a nanostructured film 1 in contact with the photoresist 7 deposited on the substrate 6, using a movable arm 8, as shown on Fig. 4. Such contact will engage Van-der-Vaals forces and make film temporary stick to the photoresist. Then, as it is shown on Fig. 5, movable arm 8 is removed from the film- substrate contact, light source, which may include optical focusing, collimating or filtering system, 9 is turned on, providing exposure to the area of film-substrate contact, and substrate 6 is translated in one direction using constant or variable speed. Such translation will make film to move as well in the direction of the translation, exposing different parts of the substrate to the same or different pattern, depending on the nanostructure fabricated on the film.
  • light source which may include optical focusing, collimating or filtering system
  • FIG. 6 Another embodiment, presented on Fig. 6 shows nanostructured film in contact with the photoresist across a wider area. This area of contact starts to move as soon as substrate begins translation in one direction.
  • the width of contact area between a nanostructured film and a substrate can be changed by changing a relative position between the substrate 6 and drums 4 and 5, and also by changing tackiness of the nanostructured film material.
  • This configuration also allows to increase area of nanostructured film exposure to light, which helps to improve a throughput of the method due to increase in dynamic exposure dosage.
  • the movable arm When nanostructured film surface contact is not tacky enough (like, for example, in case of plasmonic mask approach) the movable arm is not retracted, keeping controllable and uniform pressure between the nanostructured film and a substrate.
  • the movable arm can be fabricated in the form of transparent cylinder 1 1, as shown on Fig. 7. This cylinder is actuated by the mechanical system providing controllable and uniform contact between nanostructured film and a substrate. In that case, source of illumination 9 could be located inside such cylinder.
  • Such cylinder can be made from transparent flexible material and pressurized by a gas. In such case the area of contact and pressure between a mask and a substrate can be controlled by gas pressure.
  • the gas can be flown through flexible-wall cylinder constantly such as to create necessary controllable pressure and at the same time cool down the light source positioned inside this cylinder.
  • Disclosed nanopatterning methods can be used to pattern flexible films 12, as shown on Fig. 8, which can be translated from one roll 14 to another roll 13 during exposure.
  • Disclosed nanopatterning methods can be used to pattern rigid or flexible materials from the both sides, as shown on Fig. 9
  • Disclosed nanopatterning methods can be used to pattern non-flat or curved substrates, as shown on Fig. 10.
  • Fig. 10a shows how cylinder on a movable arm is following the curvature of the substrate
  • Fig. 10b shows how flexible-wall gas pressurized cylinder is following the curvature of the substrate. In latter case, instead of moving arm in vertical direction, one can adjust pressure inside cylinder to accommodate substrate height deviation caused by curvature.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

L'invention concerne, selon certains modes de réalisation, des procédés et un appareil utiles pour la nanostructuration de substrats de grande surface, un film nanostructuré mobile étant utilisé pour imager un matériau sensible aux rayonnements. La technique de nanostructuration utilise la photolithographie en champ proche, le film nanostructuré étant utilisé pour moduler l'intensité lumineuse qui atteint la couche sensible aux rayonnements. La photolithographie en champ proche utilise un masque élastomère déphaseur, ou peut employer une technologie de plasmons de surface, selon laquelle un film mobile comprend des nano-trous métalliques ou des nanoparticules.
PCT/US2011/000029 2010-01-12 2011-01-07 Procédé de nanostructuration et appareil WO2011087896A2 (fr)

Priority Applications (9)

Application Number Priority Date Filing Date Title
MX2012008072A MX2012008072A (es) 2010-01-12 2011-01-07 Metodos y aparatos de nanomoldeado.
EP11733170A EP2524266A2 (fr) 2010-01-12 2011-01-07 Procédé de nanostructuration et appareil
CN2011800058810A CN102859441A (zh) 2010-01-12 2011-01-07 纳米图形化方法和设备
JP2012548955A JP2013517625A (ja) 2010-01-12 2011-01-07 ナノパターン形成方法および装置
KR1020127021047A KR101430849B1 (ko) 2010-01-12 2011-01-07 나노패터닝 방법 및 장치
RU2012134344/28A RU2012134344A (ru) 2010-01-12 2011-01-07 Способ и устройство для формирования нанорисунка
AU2011205582A AU2011205582A1 (en) 2010-01-12 2011-01-07 Nanopatterning method and apparatus
CA2786489A CA2786489A1 (fr) 2010-01-12 2011-01-07 Procede de nanostructuration et appareil
US13/546,436 US9465296B2 (en) 2010-01-12 2012-07-11 Nanopatterning method and apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US33587710P 2010-01-12 2010-01-12
US61/335,877 2010-01-12

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/546,436 Continuation-In-Part US9465296B2 (en) 2010-01-12 2012-07-11 Nanopatterning method and apparatus

Publications (2)

Publication Number Publication Date
WO2011087896A2 true WO2011087896A2 (fr) 2011-07-21
WO2011087896A3 WO2011087896A3 (fr) 2012-01-12

Family

ID=44304914

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2011/000029 WO2011087896A2 (fr) 2010-01-12 2011-01-07 Procédé de nanostructuration et appareil

Country Status (9)

Country Link
EP (1) EP2524266A2 (fr)
JP (1) JP2013517625A (fr)
KR (1) KR101430849B1 (fr)
CN (1) CN102859441A (fr)
AU (1) AU2011205582A1 (fr)
CA (1) CA2786489A1 (fr)
MX (1) MX2012008072A (fr)
RU (1) RU2012134344A (fr)
WO (1) WO2011087896A2 (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2609467A2 (fr) * 2010-08-23 2013-07-03 Rolith, Inc. Masque pour lithographie de champ proche et sa fabrication
WO2013158543A1 (fr) * 2012-04-17 2013-10-24 The Regents Of The University Of Michigan Procédés de fabrication de grilles conductrices à micro-échelle et à nano-échelle d'électrodes transparentes et de polariseurs par photolithographie rouleau à rouleau
JP2015165568A (ja) * 2014-02-28 2015-09-17 延世大学校 産学協力団 ダイナミック光ヘッド層とこれを用いたリソグラフィ方法及び装置
US9244356B1 (en) 2014-04-03 2016-01-26 Rolith, Inc. Transparent metal mesh and method of manufacture
US9465296B2 (en) 2010-01-12 2016-10-11 Rolith, Inc. Nanopatterning method and apparatus
US20170116808A1 (en) 2014-05-27 2017-04-27 Metamaterial Technologies Usa, Inc. Anti-counterfeiting features and methods of fabrication and detection
US11921290B2 (en) 2017-10-26 2024-03-05 Magic Leap, Inc. Augmented reality display having liquid crystal variable focus element and roll-to-roll method and apparatus for forming the same

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI494537B (zh) * 2013-01-23 2015-08-01 Hitachi High Tech Corp A pattern measuring method, a device condition setting method of a charged particle beam device, and a charged particle beam device
CN103199268B (zh) * 2013-03-11 2016-02-03 中国科学院上海高等研究院 基于纳米压印技术的有序纳米结构膜、有序纳米结构膜电极的制备及应用
CN103268056A (zh) * 2013-05-10 2013-08-28 西安建筑科技大学 柔性掩膜板及其制备方法
CN103576447A (zh) * 2013-11-05 2014-02-12 无锡英普林纳米科技有限公司 一种含氟聚合物紫外纳米压印模板及其制备方法
CN104698745B (zh) * 2015-02-11 2019-04-12 广州中国科学院先进技术研究所 一种尺寸可控制的纳米块制作方法
JP7265865B2 (ja) * 2015-11-03 2023-04-27 マテリオン コーポレイション 迷光が低減された集束光を有するフィルタアレイ
WO2018201248A1 (fr) * 2017-05-03 2018-11-08 Nanotech Security Corp. Procédés de micro et nano-fabrication par élimination sélective de gabarit
EP3630438B1 (fr) * 2017-05-25 2021-12-15 Magic Leap, Inc. Impression en double face
CN109901362B (zh) 2017-12-11 2022-04-19 中国科学院光电技术研究所 二次成像光学光刻方法和设备

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6809356B2 (en) * 1995-11-15 2004-10-26 Regents Of The University Of Minnesota Method and apparatus for high density nanostructures
US20090174118A1 (en) * 2005-06-10 2009-07-09 Ryutaro Maeda Method and device for nano-imprinting
WO2009094009A1 (fr) * 2008-01-22 2009-07-30 Rolith, Inc. Procédé et appareil de formation de nanomotif de grande superficie
US20090269705A1 (en) * 2008-04-26 2009-10-29 Rolith, Inc Lighography method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0467654U (fr) * 1990-10-24 1992-06-16
US6236033B1 (en) * 1998-12-09 2001-05-22 Nec Research Institute, Inc. Enhanced optical transmission apparatus utilizing metal films having apertures and periodic surface topography
JP2000241648A (ja) * 1999-02-17 2000-09-08 Sony Corp 光学部品の製造装置およびその製造方法ならびに光学部品
JP2005025860A (ja) * 2003-07-02 2005-01-27 Ricoh Co Ltd 光プローブ及び光ピックアップ装置
JP2006133550A (ja) * 2004-11-08 2006-05-25 Toshiba Corp 画像消去装置及び画像消去方法
JP2008116514A (ja) * 2006-10-31 2008-05-22 Mitsubishi Paper Mills Ltd 連続露光装置
JP4406452B2 (ja) * 2007-09-27 2010-01-27 株式会社日立製作所 ベルト状金型およびそれを用いたナノインプリント装置
JP2009290504A (ja) * 2008-05-29 2009-12-10 Kyocera Corp 携帯電子機器

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6809356B2 (en) * 1995-11-15 2004-10-26 Regents Of The University Of Minnesota Method and apparatus for high density nanostructures
US20090174118A1 (en) * 2005-06-10 2009-07-09 Ryutaro Maeda Method and device for nano-imprinting
WO2009094009A1 (fr) * 2008-01-22 2009-07-30 Rolith, Inc. Procédé et appareil de formation de nanomotif de grande superficie
US20090269705A1 (en) * 2008-04-26 2009-10-29 Rolith, Inc Lighography method

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9465296B2 (en) 2010-01-12 2016-10-11 Rolith, Inc. Nanopatterning method and apparatus
EP2609467A2 (fr) * 2010-08-23 2013-07-03 Rolith, Inc. Masque pour lithographie de champ proche et sa fabrication
EP2609467A4 (fr) * 2010-08-23 2014-07-30 Rolith Inc Masque pour lithographie de champ proche et sa fabrication
US9069244B2 (en) 2010-08-23 2015-06-30 Rolith, Inc. Mask for near-field lithography and fabrication the same
WO2013158543A1 (fr) * 2012-04-17 2013-10-24 The Regents Of The University Of Michigan Procédés de fabrication de grilles conductrices à micro-échelle et à nano-échelle d'électrodes transparentes et de polariseurs par photolithographie rouleau à rouleau
US9720330B2 (en) 2012-04-17 2017-08-01 The Regents Of The University Of Michigan Methods for making micro- and nano-scale conductive grids for transparent electrodes and polarizers by roll to roll optical lithography
JP2015165568A (ja) * 2014-02-28 2015-09-17 延世大学校 産学協力団 ダイナミック光ヘッド層とこれを用いたリソグラフィ方法及び装置
US9244356B1 (en) 2014-04-03 2016-01-26 Rolith, Inc. Transparent metal mesh and method of manufacture
US20170116808A1 (en) 2014-05-27 2017-04-27 Metamaterial Technologies Usa, Inc. Anti-counterfeiting features and methods of fabrication and detection
US10395461B2 (en) 2014-05-27 2019-08-27 Metamaterial Technologies Usa, Inc. Anti-counterfeiting features and methods of fabrication and detection
US11921290B2 (en) 2017-10-26 2024-03-05 Magic Leap, Inc. Augmented reality display having liquid crystal variable focus element and roll-to-roll method and apparatus for forming the same

Also Published As

Publication number Publication date
RU2012134344A (ru) 2014-02-20
CA2786489A1 (fr) 2011-07-21
CN102859441A (zh) 2013-01-02
WO2011087896A3 (fr) 2012-01-12
AU2011205582A1 (en) 2012-08-30
MX2012008072A (es) 2013-01-29
KR20120123413A (ko) 2012-11-08
JP2013517625A (ja) 2013-05-16
EP2524266A2 (fr) 2012-11-21
KR101430849B1 (ko) 2014-09-22

Similar Documents

Publication Publication Date Title
US9465296B2 (en) Nanopatterning method and apparatus
US8518633B2 (en) Large area nanopatterning method and apparatus
JP5102879B2 (ja) 大面積ナノパターン形成方法および装置
KR101430849B1 (ko) 나노패터닝 방법 및 장치
US8182982B2 (en) Method and device for patterning a disk
KR101520196B1 (ko) 근접장 리소그래피용 마스크 및 이의 제법
US20120282554A1 (en) Large area nanopatterning method and apparatus
US8318386B2 (en) Fabrication of nanostructured devices
Cui et al. Nanofabrication by Replication
CN109901362A (zh) 二次成像光学光刻方法和设备
Cui et al. Nanofabrication by Replication

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 201180005881.0

Country of ref document: CN

ENP Entry into the national phase

Ref document number: 2786489

Country of ref document: CA

WWE Wipo information: entry into national phase

Ref document number: 2012548955

Country of ref document: JP

Ref document number: MX/A/2012/008072

Country of ref document: MX

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 1897/MUMNP/2012

Country of ref document: IN

WWE Wipo information: entry into national phase

Ref document number: 2011205582

Country of ref document: AU

ENP Entry into the national phase

Ref document number: 20127021047

Country of ref document: KR

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 2012134344

Country of ref document: RU

Ref document number: 2011733170

Country of ref document: EP

ENP Entry into the national phase

Ref document number: 2011205582

Country of ref document: AU

Date of ref document: 20110107

Kind code of ref document: A