CA2757501A1 - Vertical coplanar waveguide with tunable characteristic impedance, design structure and method of fabricating the same - Google Patents
Vertical coplanar waveguide with tunable characteristic impedance, design structure and method of fabricating the same Download PDFInfo
- Publication number
- CA2757501A1 CA2757501A1 CA2757501A CA2757501A CA2757501A1 CA 2757501 A1 CA2757501 A1 CA 2757501A1 CA 2757501 A CA2757501 A CA 2757501A CA 2757501 A CA2757501 A CA 2757501A CA 2757501 A1 CA2757501 A1 CA 2757501A1
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- CA
- Canada
- Prior art keywords
- line
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- signal line
- lower ground
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- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000013461 design Methods 0.000 title claims abstract description 78
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 230000005540 biological transmission Effects 0.000 claims abstract description 36
- 239000003989 dielectric material Substances 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims description 58
- 239000002184 metal Substances 0.000 claims description 58
- 238000000034 method Methods 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 11
- 238000012360 testing method Methods 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 9
- 238000007667 floating Methods 0.000 claims description 7
- 238000003860 storage Methods 0.000 claims description 5
- 230000005684 electric field Effects 0.000 description 16
- 239000000758 substrate Substances 0.000 description 15
- 238000012938 design process Methods 0.000 description 14
- 238000012545 processing Methods 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000004088 simulation Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000003780 insertion Methods 0.000 description 5
- 230000037431 insertion Effects 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011960 computer-aided design Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
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- 238000001465 metallisation Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000006855 networking Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/003—Coplanar lines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
- H01P3/08—Microstrips; Strip lines
- H01P3/085—Triplate lines
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Waveguides (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/478,385 | 2009-06-04 | ||
| US12/478,385 US8212634B2 (en) | 2009-06-04 | 2009-06-04 | Vertical coplanar waveguide with tunable characteristic impedance design structure and method of fabricating the same |
| PCT/US2010/032645 WO2010141167A2 (en) | 2009-06-04 | 2010-04-28 | Vertical coplanar waveguide with tunable characteristic impedance, design structure and method of fabricating the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2757501A1 true CA2757501A1 (en) | 2010-12-09 |
Family
ID=43298387
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA2757501A Pending CA2757501A1 (en) | 2009-06-04 | 2010-04-28 | Vertical coplanar waveguide with tunable characteristic impedance, design structure and method of fabricating the same |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8212634B2 (https=) |
| EP (1) | EP2438644A4 (https=) |
| JP (1) | JP5576480B2 (https=) |
| CN (1) | CN102428603B (https=) |
| CA (1) | CA2757501A1 (https=) |
| TW (1) | TWI513093B (https=) |
| WO (1) | WO2010141167A2 (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8994456B2 (en) | 2012-01-30 | 2015-03-31 | International Business Machines Corporation | Multi-stage amplifier using tunable transmission lines and frequency response calibration of same |
| US9362606B2 (en) * | 2013-08-23 | 2016-06-07 | International Business Machines Corporation | On-chip vertical three dimensional microstrip line with characteristic impedance tuning technique and design structures |
| US9588298B2 (en) * | 2015-06-04 | 2017-03-07 | Elenion Technologies, Llc | Edge coupler |
| US9851506B2 (en) | 2015-06-04 | 2017-12-26 | Elenion Technologies, Llc | Back end of line process integrated optical device fabrication |
| TWI690043B (zh) * | 2016-02-17 | 2020-04-01 | 瑞昱半導體股份有限公司 | 積體電路裝置 |
| DE102019126433A1 (de) * | 2019-03-14 | 2020-09-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Übertragungsleitungsstrukturen für Millimeterwellensignale |
| US11515609B2 (en) * | 2019-03-14 | 2022-11-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Transmission line structures for millimeter wave signals |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2812501A (en) * | 1954-03-04 | 1957-11-05 | Sanders Associates Inc | Transmission line |
| JP3362535B2 (ja) | 1994-12-14 | 2003-01-07 | 株式会社村田製作所 | 高周波電磁界結合型薄膜積層電極、高周波伝送線路、高周波共振器、高周波フィルタ、高周波デバイス及び高周波電磁界結合型薄膜積層電極の膜厚設定方法 |
| US5561405A (en) * | 1995-06-05 | 1996-10-01 | Hughes Aircraft Company | Vertical grounded coplanar waveguide H-bend interconnection apparatus |
| JP3307212B2 (ja) * | 1996-02-13 | 2002-07-24 | 株式会社村田製作所 | 伝送線路 |
| KR100371877B1 (ko) * | 1997-04-16 | 2003-02-11 | 가부시끼가이샤 도시바 | 배선기판과 배선기판의 제조방법 및 반도체 패키지 |
| KR100287646B1 (ko) | 1998-07-27 | 2001-04-16 | 김병규 | 스트립 라인 구조를 갖는 마이크로웨이브 소자 및 그의제조방법 |
| EP0977263A3 (en) * | 1998-07-31 | 2002-07-10 | STMicroelectronics, Inc. | Apparatus and method for reducing propagation delay in a conductor |
| JP3255118B2 (ja) * | 1998-08-04 | 2002-02-12 | 株式会社村田製作所 | 伝送線路および伝送線路共振器 |
| SE514406C2 (sv) * | 1999-06-17 | 2001-02-19 | Ericsson Telefon Ab L M | Elektrisk transmissionsanordning med korsande striplineledningar |
| JP2001006941A (ja) | 1999-06-18 | 2001-01-12 | Fujitsu General Ltd | 高周波トランスおよびインピーダンス変換器 |
| US7554829B2 (en) * | 1999-07-30 | 2009-06-30 | Micron Technology, Inc. | Transmission lines for CMOS integrated circuits |
| US6975189B1 (en) * | 2000-11-02 | 2005-12-13 | Telasic Communications, Inc. | On-chip multilayer metal shielded transmission line |
| JP2003234606A (ja) * | 2002-02-07 | 2003-08-22 | Nippon Telegr & Teleph Corp <Ntt> | マイクロ波伝送線路 |
| US6759923B1 (en) * | 2002-02-19 | 2004-07-06 | Raytheon Company | Device for directing energy, and a method of making same |
| TW200409153A (en) * | 2002-09-04 | 2004-06-01 | Nec Corp | Strip line element, printed circuit board carrying member, circuit board, semiconductor package and method for forming same |
| US6832029B2 (en) * | 2002-12-17 | 2004-12-14 | Mcnc | Impedance control devices for use in the transition regions of electromagnetic and optical circuitry and methods for using the same |
| US6847273B2 (en) * | 2003-04-25 | 2005-01-25 | Cyntec Co., Ltd. | Miniaturized multi-layer coplanar wave guide low pass filter |
| US7504587B2 (en) * | 2003-08-29 | 2009-03-17 | Semiconductor Technology Academic Research Center | Parallel wiring and integrated circuit |
| US20050062137A1 (en) * | 2003-09-18 | 2005-03-24 | International Business Machines Corporation | Vertically-stacked co-planar transmission line structure for IC design |
| JP3982511B2 (ja) * | 2004-03-09 | 2007-09-26 | ソニー株式会社 | フラット型ケーブル製造方法 |
| US7103488B2 (en) * | 2004-07-16 | 2006-09-05 | International Business Machines Corporation | Method for determining fringing capacitances on passive devices within an integrated circuit |
| US7292449B2 (en) * | 2004-12-13 | 2007-11-06 | Lexmark International, Inc. | Virtual ground return for reduction of radiated emissions |
| JP4336319B2 (ja) | 2005-02-24 | 2009-09-30 | 京セラ株式会社 | 積層ストリップラインフィルタ |
| DE102005033306B3 (de) * | 2005-07-16 | 2006-08-03 | Atmel Germany Gmbh | Monolithisch integrierte Schaltung mit integrierter Entstörvorrichtung |
| US7415058B2 (en) * | 2005-10-05 | 2008-08-19 | Massachusetts Institute Of Technology | Ultra-high-Q surface-tension-induced monolithically integrated on-chip resonator and associated devices |
| US7612638B2 (en) * | 2006-07-14 | 2009-11-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Waveguides in integrated circuits |
-
2009
- 2009-06-04 US US12/478,385 patent/US8212634B2/en not_active Expired - Fee Related
-
2010
- 2010-04-28 WO PCT/US2010/032645 patent/WO2010141167A2/en not_active Ceased
- 2010-04-28 CN CN201080021236.3A patent/CN102428603B/zh active Active
- 2010-04-28 JP JP2012513950A patent/JP5576480B2/ja not_active Expired - Fee Related
- 2010-04-28 EP EP10783756A patent/EP2438644A4/en not_active Withdrawn
- 2010-04-28 CA CA2757501A patent/CA2757501A1/en active Pending
- 2010-06-01 TW TW099117559A patent/TWI513093B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| JP5576480B2 (ja) | 2014-08-20 |
| EP2438644A2 (en) | 2012-04-11 |
| EP2438644A4 (en) | 2013-01-23 |
| WO2010141167A3 (en) | 2011-01-27 |
| CN102428603B (zh) | 2014-01-22 |
| WO2010141167A2 (en) | 2010-12-09 |
| CN102428603A (zh) | 2012-04-25 |
| US8212634B2 (en) | 2012-07-03 |
| JP2012529226A (ja) | 2012-11-15 |
| US20100315181A1 (en) | 2010-12-16 |
| TWI513093B (zh) | 2015-12-11 |
| TW201123605A (en) | 2011-07-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request |
Effective date: 20150204 |