TWI513093B - 具有可調諧特性阻抗之垂直共平面波導、設計結構及其製造方法 - Google Patents
具有可調諧特性阻抗之垂直共平面波導、設計結構及其製造方法 Download PDFInfo
- Publication number
- TWI513093B TWI513093B TW099117559A TW99117559A TWI513093B TW I513093 B TWI513093 B TW I513093B TW 099117559 A TW099117559 A TW 099117559A TW 99117559 A TW99117559 A TW 99117559A TW I513093 B TWI513093 B TW I513093B
- Authority
- TW
- Taiwan
- Prior art keywords
- line
- ground line
- signal line
- wafer
- signal
- Prior art date
Links
- 238000013461 design Methods 0.000 title claims description 91
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 60
- 239000002184 metal Substances 0.000 claims description 60
- 230000005540 biological transmission Effects 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 22
- 239000003989 dielectric material Substances 0.000 claims description 21
- 230000005684 electric field Effects 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 12
- 238000012360 testing method Methods 0.000 claims description 12
- 239000004020 conductor Substances 0.000 claims description 10
- 238000007667 floating Methods 0.000 claims description 6
- 238000003860 storage Methods 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 62
- 235000012431 wafers Nutrition 0.000 description 22
- 239000000758 substrate Substances 0.000 description 18
- 230000008569 process Effects 0.000 description 11
- 238000012545 processing Methods 0.000 description 9
- 239000011241 protective layer Substances 0.000 description 7
- 229910052732 germanium Inorganic materials 0.000 description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000004088 simulation Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000012938 design process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 238000012795 verification Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000011960 computer-aided design Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 238000012804 iterative process Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- -1 shapes Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000002076 thermal analysis method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/003—Coplanar lines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
- H01P3/08—Microstrips; Strip lines
- H01P3/085—Triplate lines
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Waveguides (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/478,385 US8212634B2 (en) | 2009-06-04 | 2009-06-04 | Vertical coplanar waveguide with tunable characteristic impedance design structure and method of fabricating the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201123605A TW201123605A (en) | 2011-07-01 |
| TWI513093B true TWI513093B (zh) | 2015-12-11 |
Family
ID=43298387
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099117559A TWI513093B (zh) | 2009-06-04 | 2010-06-01 | 具有可調諧特性阻抗之垂直共平面波導、設計結構及其製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8212634B2 (https=) |
| EP (1) | EP2438644A4 (https=) |
| JP (1) | JP5576480B2 (https=) |
| CN (1) | CN102428603B (https=) |
| CA (1) | CA2757501A1 (https=) |
| TW (1) | TWI513093B (https=) |
| WO (1) | WO2010141167A2 (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8994456B2 (en) | 2012-01-30 | 2015-03-31 | International Business Machines Corporation | Multi-stage amplifier using tunable transmission lines and frequency response calibration of same |
| US9362606B2 (en) * | 2013-08-23 | 2016-06-07 | International Business Machines Corporation | On-chip vertical three dimensional microstrip line with characteristic impedance tuning technique and design structures |
| US9588298B2 (en) * | 2015-06-04 | 2017-03-07 | Elenion Technologies, Llc | Edge coupler |
| US9851506B2 (en) | 2015-06-04 | 2017-12-26 | Elenion Technologies, Llc | Back end of line process integrated optical device fabrication |
| TWI690043B (zh) * | 2016-02-17 | 2020-04-01 | 瑞昱半導體股份有限公司 | 積體電路裝置 |
| DE102019126433A1 (de) * | 2019-03-14 | 2020-09-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Übertragungsleitungsstrukturen für Millimeterwellensignale |
| US11515609B2 (en) * | 2019-03-14 | 2022-11-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Transmission line structures for millimeter wave signals |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010040490A1 (en) * | 1998-08-04 | 2001-11-15 | Hiroaki Tanaka | Transmission line and transmission line resonator |
| US6522214B1 (en) * | 1999-06-17 | 2003-02-18 | Telefonaktiebolaget Lm Ericsson (Publ) | Electrical transmission line arrangement with a cross-over |
| US20040212461A1 (en) * | 2003-04-25 | 2004-10-28 | Cyntec Co., Ltd. | Miniaturized multi-layer coplanar wave guide low pass filter |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2812501A (en) * | 1954-03-04 | 1957-11-05 | Sanders Associates Inc | Transmission line |
| JP3362535B2 (ja) | 1994-12-14 | 2003-01-07 | 株式会社村田製作所 | 高周波電磁界結合型薄膜積層電極、高周波伝送線路、高周波共振器、高周波フィルタ、高周波デバイス及び高周波電磁界結合型薄膜積層電極の膜厚設定方法 |
| US5561405A (en) * | 1995-06-05 | 1996-10-01 | Hughes Aircraft Company | Vertical grounded coplanar waveguide H-bend interconnection apparatus |
| JP3307212B2 (ja) * | 1996-02-13 | 2002-07-24 | 株式会社村田製作所 | 伝送線路 |
| KR100371877B1 (ko) * | 1997-04-16 | 2003-02-11 | 가부시끼가이샤 도시바 | 배선기판과 배선기판의 제조방법 및 반도체 패키지 |
| KR100287646B1 (ko) | 1998-07-27 | 2001-04-16 | 김병규 | 스트립 라인 구조를 갖는 마이크로웨이브 소자 및 그의제조방법 |
| EP0977263A3 (en) * | 1998-07-31 | 2002-07-10 | STMicroelectronics, Inc. | Apparatus and method for reducing propagation delay in a conductor |
| JP2001006941A (ja) | 1999-06-18 | 2001-01-12 | Fujitsu General Ltd | 高周波トランスおよびインピーダンス変換器 |
| US7554829B2 (en) * | 1999-07-30 | 2009-06-30 | Micron Technology, Inc. | Transmission lines for CMOS integrated circuits |
| US6975189B1 (en) * | 2000-11-02 | 2005-12-13 | Telasic Communications, Inc. | On-chip multilayer metal shielded transmission line |
| JP2003234606A (ja) * | 2002-02-07 | 2003-08-22 | Nippon Telegr & Teleph Corp <Ntt> | マイクロ波伝送線路 |
| US6759923B1 (en) * | 2002-02-19 | 2004-07-06 | Raytheon Company | Device for directing energy, and a method of making same |
| TW200409153A (en) * | 2002-09-04 | 2004-06-01 | Nec Corp | Strip line element, printed circuit board carrying member, circuit board, semiconductor package and method for forming same |
| US6832029B2 (en) * | 2002-12-17 | 2004-12-14 | Mcnc | Impedance control devices for use in the transition regions of electromagnetic and optical circuitry and methods for using the same |
| US7504587B2 (en) * | 2003-08-29 | 2009-03-17 | Semiconductor Technology Academic Research Center | Parallel wiring and integrated circuit |
| US20050062137A1 (en) * | 2003-09-18 | 2005-03-24 | International Business Machines Corporation | Vertically-stacked co-planar transmission line structure for IC design |
| JP3982511B2 (ja) * | 2004-03-09 | 2007-09-26 | ソニー株式会社 | フラット型ケーブル製造方法 |
| US7103488B2 (en) * | 2004-07-16 | 2006-09-05 | International Business Machines Corporation | Method for determining fringing capacitances on passive devices within an integrated circuit |
| US7292449B2 (en) * | 2004-12-13 | 2007-11-06 | Lexmark International, Inc. | Virtual ground return for reduction of radiated emissions |
| JP4336319B2 (ja) | 2005-02-24 | 2009-09-30 | 京セラ株式会社 | 積層ストリップラインフィルタ |
| DE102005033306B3 (de) * | 2005-07-16 | 2006-08-03 | Atmel Germany Gmbh | Monolithisch integrierte Schaltung mit integrierter Entstörvorrichtung |
| US7415058B2 (en) * | 2005-10-05 | 2008-08-19 | Massachusetts Institute Of Technology | Ultra-high-Q surface-tension-induced monolithically integrated on-chip resonator and associated devices |
| US7612638B2 (en) * | 2006-07-14 | 2009-11-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Waveguides in integrated circuits |
-
2009
- 2009-06-04 US US12/478,385 patent/US8212634B2/en not_active Expired - Fee Related
-
2010
- 2010-04-28 WO PCT/US2010/032645 patent/WO2010141167A2/en not_active Ceased
- 2010-04-28 CN CN201080021236.3A patent/CN102428603B/zh active Active
- 2010-04-28 JP JP2012513950A patent/JP5576480B2/ja not_active Expired - Fee Related
- 2010-04-28 EP EP10783756A patent/EP2438644A4/en not_active Withdrawn
- 2010-04-28 CA CA2757501A patent/CA2757501A1/en active Pending
- 2010-06-01 TW TW099117559A patent/TWI513093B/zh active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010040490A1 (en) * | 1998-08-04 | 2001-11-15 | Hiroaki Tanaka | Transmission line and transmission line resonator |
| US6522214B1 (en) * | 1999-06-17 | 2003-02-18 | Telefonaktiebolaget Lm Ericsson (Publ) | Electrical transmission line arrangement with a cross-over |
| US20040212461A1 (en) * | 2003-04-25 | 2004-10-28 | Cyntec Co., Ltd. | Miniaturized multi-layer coplanar wave guide low pass filter |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5576480B2 (ja) | 2014-08-20 |
| EP2438644A2 (en) | 2012-04-11 |
| EP2438644A4 (en) | 2013-01-23 |
| WO2010141167A3 (en) | 2011-01-27 |
| CA2757501A1 (en) | 2010-12-09 |
| CN102428603B (zh) | 2014-01-22 |
| WO2010141167A2 (en) | 2010-12-09 |
| CN102428603A (zh) | 2012-04-25 |
| US8212634B2 (en) | 2012-07-03 |
| JP2012529226A (ja) | 2012-11-15 |
| US20100315181A1 (en) | 2010-12-16 |
| TW201123605A (en) | 2011-07-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI545833B (zh) | 形成功率分配器之方法、半導體結構及設計結構 | |
| TWI482252B (zh) | 與貫穿基板介層整合的金屬配線構造 | |
| TWI513093B (zh) | 具有可調諧特性阻抗之垂直共平面波導、設計結構及其製造方法 | |
| US9874690B2 (en) | Integrated waveguide structure with perforated chip edge seal | |
| US9035719B2 (en) | Three dimensional branchline coupler using through silicon vias and design structures | |
| US8649153B2 (en) | Tapered via and MIM capacitor | |
| US9904009B2 (en) | Electrical and optical through-silicon-via (TSV) | |
| US10262934B2 (en) | Three plate MIM capacitor via integrity verification | |
| US8912630B2 (en) | Integrated circuit including thermal gate, related method and design structure | |
| US8680689B1 (en) | Coplanar waveguide for stacked multi-chip systems | |
| US20180040556A1 (en) | Integrated circuit including wire structure, related method and design structure | |
| US8809998B2 (en) | Semiconductor device including in wafer inductors, related method and design structure | |
| US8912626B2 (en) | eFuse and method of fabrication | |
| US20160035668A1 (en) | Automated short lenght wire shape strapping and methods of fabricating the same | |
| US9553348B2 (en) | On-chip vertical three dimensional microstrip line with characteristic impedance tuning technique and design structures | |
| US9263782B2 (en) | Notch filter structure with open stubs in semiconductor substrate and design structure | |
| US8822993B2 (en) | Integrated circuit including sensor structure, related method and design structure | |
| US20150017803A1 (en) | Customized alleviation of stresses generated by through-substrate via(s) | |
| US10103068B2 (en) | Detecting a void between a via and a wiring line |