CA2454155A1 - Interface thermique electriquement conductrice - Google Patents

Interface thermique electriquement conductrice Download PDF

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Publication number
CA2454155A1
CA2454155A1 CA002454155A CA2454155A CA2454155A1 CA 2454155 A1 CA2454155 A1 CA 2454155A1 CA 002454155 A CA002454155 A CA 002454155A CA 2454155 A CA2454155 A CA 2454155A CA 2454155 A1 CA2454155 A1 CA 2454155A1
Authority
CA
Canada
Prior art keywords
flakes
heat transfer
transfer material
edges
microchip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002454155A
Other languages
English (en)
Inventor
Ignatius J. Rasiah
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2454155A1 publication Critical patent/CA2454155A1/fr
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/10—Sintering only
    • B22F3/11—Making porous workpieces or articles
    • B22F3/1103—Making porous workpieces or articles with particular physical characteristics
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Powder Metallurgy (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Conductive Materials (AREA)
  • Die Bonding (AREA)

Abstract

L'invention concerne un matériau de transfert de chaleur poreux, souple et élastique comprenant un réseau de flocons métalliques. De tels matériaux de transfert de chaleur sont, de préférence, obtenus, dans un premier temps, par formation d'une pâte conductrice comprenant un solvant volatil organique et des flocons métalliques conducteurs. La pâte conductrice est chauffée à une température inférieure au point de fusion des flocons métalliques, évaporant ainsi le solvant et frittant uniquement les bords des flocons qui sont fusionnés aux bords de flocons adjacents, de manière que des pores ouverts soient définis entre au moins quelques flocons parmi les flocons adjacents, formant ainsi un réseau de flocons métalliques. Grâce à cette structure en réseau, le matériau de transfert de chaleur présente aussi bien un faible module de stockage inférieur à environ 10 Gpa que de bonnes propriétés de résistance électrique.
CA002454155A 2001-10-18 2001-10-18 Interface thermique electriquement conductrice Abandoned CA2454155A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2001/032544 WO2003041165A2 (fr) 2001-10-18 2001-10-18 Interface thermique electriquement conductrice

Publications (1)

Publication Number Publication Date
CA2454155A1 true CA2454155A1 (fr) 2003-05-15

Family

ID=21742921

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002454155A Abandoned CA2454155A1 (fr) 2001-10-18 2001-10-18 Interface thermique electriquement conductrice

Country Status (7)

Country Link
EP (1) EP1436835A2 (fr)
JP (1) JP4202923B2 (fr)
KR (1) KR100782235B1 (fr)
CN (2) CN1319162C (fr)
CA (1) CA2454155A1 (fr)
TW (1) TW578180B (fr)
WO (1) WO2003041165A2 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100529112B1 (ko) * 2003-09-26 2005-11-15 삼성에스디아이 주식회사 다공성 열전달 시트를 갖는 디스플레이 장치
TW200923975A (en) * 2007-10-12 2009-06-01 Cheil Ind Inc Composition for fabrication of electrode, electrode fabricated using the same, plasma display panel, and associated methods
CN101911219B (zh) 2008-01-17 2015-12-16 日亚化学工业株式会社 导电性材料及其制造方法、电子设备、发光装置及其制造方法
CN101319775B (zh) * 2008-07-18 2010-06-09 东莞东海龙环保科技有限公司 功率型led灯具的高导热柔性填隙材料
US20120064291A1 (en) * 2009-03-06 2012-03-15 Gaochao Lai Electrically conductive paste composition and electrically conductive film formed by using the same
JP5933441B2 (ja) * 2010-08-31 2016-06-08 ポリマテック・ジャパン株式会社 熱伝導性シート
US10000670B2 (en) 2012-07-30 2018-06-19 Henkel IP & Holding GmbH Silver sintering compositions with fluxing or reducing agents for metal adhesion
EP3294799A4 (fr) 2015-05-08 2018-11-21 Henkel IP & Holding GmbH Films et pâtes frittables, et procédés d'utilisation
KR20210143812A (ko) * 2019-03-20 2021-11-29 스미또모 베이크라이트 가부시키가이샤 열전도성 조성물 및 반도체 장치
CN112207481A (zh) * 2020-09-09 2021-01-12 中山大学 一种低温无压烧结微米银焊膏及其制备方法和应用
CN113492281A (zh) * 2021-05-27 2021-10-12 中山大学 一种在裸铜上低温无压直接烧结的微米银焊膏及其制备方法和应用

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63140292A (ja) * 1986-11-30 1988-06-11 Chuo Denki Kogyo Kk 多孔型放熱体
CN1019760B (zh) * 1987-06-11 1992-12-30 国家机械工业委员会上海材料研究所 由球形金属粉末制造多孔元件的方法
JPH07118701A (ja) * 1993-10-22 1995-05-09 Katayama Tokushu Kogyo Kk フレーク状金属粉末、金属多孔体およびフレーク状金属粉末の製造方法
JPH08213026A (ja) * 1994-11-28 1996-08-20 Katayama Tokushu Kogyo Kk 電池電極基板用金属多孔体、電池電極板およびその製造方法
JP3166060B2 (ja) * 1995-12-11 2001-05-14 三菱マテリアル株式会社 放熱シート
US5738936A (en) * 1996-06-27 1998-04-14 W. L. Gore & Associates, Inc. Thermally conductive polytetrafluoroethylene article
JP4174088B2 (ja) * 1997-07-14 2008-10-29 住友ベークライト株式会社 導電性樹脂ペースト及びこれを用いて製造された半導体装置

Also Published As

Publication number Publication date
JP2005509293A (ja) 2005-04-07
WO2003041165A2 (fr) 2003-05-15
KR20040051582A (ko) 2004-06-18
KR100782235B1 (ko) 2007-12-05
CN1319162C (zh) 2007-05-30
CN1545731A (zh) 2004-11-10
WO2003041165A3 (fr) 2003-07-24
CN101038795A (zh) 2007-09-19
EP1436835A2 (fr) 2004-07-14
TW578180B (en) 2004-03-01
JP4202923B2 (ja) 2008-12-24

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Legal Events

Date Code Title Description
FZDE Discontinued